Ingalo yokuphatha isiphelo se-SiC ceramic end effector yokuthwala i-wafer

Ingalo yokuphatha i-SiC ceramic end effector yokuthwala i-wafer Umfanekiso obonisiweyo

Inkcazo emfutshane:

IiWafers zeLiNbO₃ zimele umgangatho wegolide kwi-photonics edibeneyo kunye ne-activism echanekileyo, zibonelela ngokusebenza okungenakuthelekiswa nanto kwiinkqubo zanamhlanje ze-optoelectronic. Njengomvelisi okhokelayo, siphucule ubugcisa bokuvelisa ezi substrates zenziwe ngobunjineli ngeendlela eziphambili zokulinganisa uthutho lomphunga, sifezekisa ukugqibelela kwekristale okuphambili kushishino kunye noxinano oluneziphene ngaphantsi kwe-50/cm².

Amandla okuvelisa i-XKH aqala kwi-75mm ukuya kwi-150mm, kunye nolawulo oluchanekileyo lokujonga (X/Y/Z-cut ±0.3°) kunye neendlela ezikhethekileyo zokusebenzisa i-doping kuquka izinto ezingaqhelekanga. Indibaniselwano eyahlukileyo yeempawu kwi-LiNbO₃ Wafers – kuquka i-r₃₃ coefficient yazo emangalisayo (32±2pm/V) kunye nokucaca okubanzi ukusuka kwi-UV ukuya kwi-mid-IR – kuzenza zibe yimfuneko kwiisekethe ze-photonic zesizukulwana esilandelayo kunye nezixhobo ze-acoustic ezisebenza rhoqo.

Thumela i-imeyile kuthi

Iimbonakalo

Isishwankathelo sesiphumo sokuphela kwe-ceramic ye-SiC

I-SiC (Silicon Carbide) ceramic end-effector yinxalenye ebalulekileyo kwiinkqubo zokuphatha ii-wafer ezichanekileyo ezisetyenziswa kwimveliso ye-semiconductor nakwiindawo eziphucukileyo ze-microfabrication. Yenzelwe ukuhlangabezana neemfuno ezifunekayo zeendawo ezicocekileyo kakhulu, ezinobushushu obuphezulu, nezizinzileyo, le siphelo sikhethekileyo siqinisekisa ukuthuthwa kwee-wafers okuthembekileyo nokungangcolisiyo ngexesha leenkqubo eziphambili zemveliso ezifana ne-lithography, etching, kunye ne-deposition.

Ukusebenzisa iipropati eziphezulu zezinto ze-silicon carbide—ezifana nokuqhuba okuphezulu kobushushu, ubulukhuni obugqithisileyo, ukungangeni kakuhle kweekhemikhali, kunye nokwandiswa okuncinci kobushushu—i-SiC ceramic end-effector inika ubulukhuni obungenakuthelekiswa nanto boomatshini kunye nozinzo olulinganayo nokuba phantsi komjikelo okhawulezayo wobushushu okanye kwiindawo zenkqubo yokubola. Ukuveliswa kwayo kwamasuntswana aphantsi kunye neempawu zokumelana ne-plasma zenza ukuba ifaneleke ngokukodwa kwiindawo zokucoca kunye nezicelo zokucoca nge-vacuum, apho ukugcina ukuthembeka komphezulu we-wafer kunye nokunciphisa ungcoliseko lwamasuntswana kubaluleke kakhulu.

Isicelo se-SiC ceramic end effector

1. Ukuphathwa kweWafer yeSemiconductor

Ii-SiC ceramic end effectors zisetyenziswa kakhulu kwishishini le-semiconductor ukuphatha ii-silicon wafers ngexesha lemveliso ezenzekelayo. Ezi zixhobo zihlala zifakelwa kwiingalo zerobhothi okanye kwiinkqubo zokudlulisa i-vacuum kwaye zenzelwe ukwamkela ii-wafers zobukhulu obahlukeneyo ezifana ne-200mm kunye ne-300mm. Zibalulekile kwiinkqubo eziquka i-Chemical Vapor Deposition (CVD), i-Physical Vapor Deposition (PVD), i-etching, kunye ne-diffusion—apho amaqondo obushushu aphezulu, iimeko ze-vacuum, kunye neegesi ezirhabaxa zixhaphakileyo. Ukumelana okungaqhelekanga kobushushu be-SiC kunye nokuzinza kweekhemikhali kwenza ukuba ibe yinto efanelekileyo yokumelana neendawo ezinzima ngaphandle kokuwohloka.

2. Ukuhambelana kwegumbi lokucoca kunye ne-vacuum

Kwiindawo zokucoca kunye neendawo zokucoca, apho ungcoliseko lwamasuntswana kufuneka luncitshiswe khona, ii-ceramics ze-SiC zibonelela ngeenzuzo ezibalulekileyo. Umphezulu oxineneyo nogudileyo wezinto ezisetyenzisiweyo umelana nokuveliswa kwamasuntswana, nto leyo enceda ukugcina ukuthembeka kwe-wafer ngexesha lokuthuthwa. Oku kwenza ukuba ii-end effectors ze-SiC zilungele ngokukodwa iinkqubo ezibalulekileyo ezifana ne-Extreme Ultraviolet Lithography (EUV) kunye ne-Atomic Layer Deposition (ALD), apho ucoceko lubaluleke kakhulu. Ngaphezu koko, i-SiC's low outgas kunye nokumelana okuphezulu kwe-plasma kuqinisekisa ukusebenza okuthembekileyo kwiindawo zokucoca, ukwandisa ubomi bezixhobo kunye nokunciphisa amaxesha okugcinwa.

3. Iinkqubo zokubeka indawo ezichanekileyo

Ukuchaneka kunye nokuzinza kubalulekile kwiinkqubo zokuphatha ii-wafer eziphucukileyo, ngakumbi kwi-metrology, ukuhlolwa, kunye nezixhobo zokulungelelanisa. Ii-ceramics ze-SiC zine-coefficient ephantsi kakhulu yokwandiswa kobushushu kunye nokuqina okuphezulu, okuvumela i-end effector ukuba igcine ukuchaneka kwesakhiwo sayo nokuba iphantsi kokujikeleza kobushushu okanye umthwalo woomatshini. Oku kuqinisekisa ukuba ii-wafers zihlala zilungelelaniswe ngokuchanekileyo ngexesha lokuthuthwa, kunciphisa umngcipheko wokukrweleka okuncinci, ukungalungelelani, okanye iimpazamo zokulinganisa—izinto ezibaluleke ngakumbi kwiindawo zenkqubo ze-sub-5nm.

Iipropati zeSiC ceramic end effector

1. Amandla aphezulu oomatshini kunye noBulukhuni

Iiseramikhi zeSiC zinamandla angaqhelekanga oomatshini, kwaye amandla azo ahlala edlula i-400 MPa kunye namaxabiso obunzima beVickers angaphezu kwe-2000 HV. Oku kuzenza zikwazi ukumelana noxinzelelo loomatshini, impembelelo, kunye nokuguguleka, nokuba sele zisetyenzisiwe ixesha elide. Ukuqina okuphezulu kweSiC kunciphisa ukuphambuka ngexesha lokudluliselwa kwe-wafer ngesantya esiphezulu, ukuqinisekisa indawo echanekileyo nephindaphindwayo.

2. Uzinzo oluhle kakhulu lobushushu

Enye yezona mpawu zixabisekileyo zeeseramikhi zeSiC kukukwazi kwazo ukumelana namaqondo obushushu aphezulu kakhulu—ngokuqhelekileyo ukuya kuthi ga kwi-1600°C kwiindawo ezingasebenzi kakuhle—ngaphandle kokulahlekelwa bubunyani boomatshini. I-coefficient yazo ephantsi yokwandiswa kobushushu (~4.0 x 10⁻⁶ /K) iqinisekisa uzinzo olulinganayo phantsi komjikelo wobushushu, nto leyo eyenza ukuba zilungele ukusetyenziswa njengeCVD, PVD, kunye ne-high-temperature annealing.

Imibuzo neempendulo zeSiC ceramic end effector

Q: Zeziphi izinto ezisetyenziswa kwi-wafer end effector?

A:Ii-effectors ze-wafer zidla ngokwenziwa ngezinto ezinika amandla aphezulu, uzinzo lobushushu, kunye nokuveliswa kwamasuntswana aphantsi. Phakathi kwezi, i-Silicon Carbide (SiC) ceramic yenye yezona zinto ziphambili nezithandwayo. Ii-SiC ceramics ziqinile kakhulu, zizinzile kubushushu, azinakhemikhali, kwaye azigugi, nto leyo ezenza zilungele ukuphatha ii-silicon wafers ezithambileyo kwigumbi lokucoca nakwiindawo zokucoca. Xa kuthelekiswa ne-quartz okanye iintsimbi ezigqunyiweyo, i-SiC inika uzinzo oluphezulu phantsi kobushushu obuphezulu kwaye ayilahli amasuntswana, nto leyo enceda ekuthinteleni ungcoliseko.