Itreyi ye-SiC ceramic chuck
Iimpawu zezinto ezibonakalayo:
1. Ubunzima obuphezulu: Ubunzima be-Mohs be-silicon carbide yi-9.2-9.5, bulandela idayimani kuphela, bunokumelana okunamandla nokuguguleka.
2. Ukuqhuba okuphezulu kobushushu: ukuqhubela phambili kobushushu be-silicon carbide kuphezulu njenge-120-200 W/m·K, okunokususa ubushushu ngokukhawuleza kwaye kufanelekile kwindawo enobushushu obuphezulu.
3. I-coefficient yokwandisa ubushushu ephantsi: i-coefficient yokwandisa ubushushu ye-silicon carbide iphantsi (4.0-4.5×10⁻⁶/K), isenokugcina uzinzo olulinganayo kubushushu obuphezulu.
4. Uzinzo lweekhemikhali: i-silicon carbide acid kunye nokumelana nokugqwala kwe-alkali, okufanelekileyo ukusetyenziswa kwindawo egqwala iikhemikhali.
5. Amandla aphezulu oomatshini: i-silicon carbide inamandla aphezulu okugoba kunye namandla okucinezela, kwaye inokumelana noxinzelelo olukhulu loomatshini.
Iimbonakalo:
1. Kwishishini le-semiconductor, ii-wafers ezibhityileyo kakhulu kufuneka zibekwe kwikomityi yokufunxa i-vacuum, i-vacuum suction isetyenziselwa ukulungisa ii-wafers, kwaye inkqubo yokufunxa, ukuncitshiswa, ukufunxa, ukucoca kunye nokusika yenziwa kwii-wafers.
2. I-Silicon carbide sucker inomoya ofudumeleyo, inganciphisa ixesha lokuwaxa kunye nokuwaxa ngempumelelo, iphucule ukusebenza kakuhle kwemveliso.
3. I-Silicon carbide vacuum sucker ikwanayo ne-asidi kunye ne-alkali resistance elungileyo.
4. Xa kuthelekiswa nepleyiti yesiqhelo yokuthwala i-corundum, inciphisa ixesha lokulayisha nokukhupha ixesha lokufudumeza nokupholisa, iphucula ukusebenza kakuhle komsebenzi; Kwangaxeshanye, inokunciphisa ukuguguleka phakathi kweepleyiti eziphezulu nezisezantsi, igcine ukuchaneka okuhle kwendiza, kwaye yandise ubomi benkonzo malunga ne-40%.
5. Umlinganiselo wezinto eziphathekayo mncinci, ulula. Kulula kubaqhubi ukuthwala iipalethi, nto leyo enciphisa umngcipheko womonakalo wengozi obangelwa ziingxaki zothutho malunga ne-20%.
6. Ubungakanani: ububanzi obukhulu yi-640mm; Ubude obuthe tyaba: 3um okanye ngaphantsi
Intsimi yesicelo:
1. Ukuveliswa kwee-semiconductor
●Ukulungiswa kwewafer:
Ukulungiswa kwe-wafer kwi-photolithography, etching, thin film deposition kunye nezinye iinkqubo, ukuqinisekisa ukuchaneka okuphezulu kunye nokuhambelana kwenkqubo. Ubushushu bayo obuphezulu kunye nokumelana nokugqwala kufanelekile kwiindawo ezinzima zokuvelisa i-semiconductor.
●Ukukhula kwe-Epitaxial:
Kwi-SiC okanye kwi-GaN epitaxial growth, njengesixhobo sokuthwala ubushushu nokulungisa ii-wafers, ukuqinisekisa ukufana kobushushu kunye nomgangatho wekristale kumaqondo obushushu aphezulu, ukuphucula ukusebenza kwesixhobo.
2. Izixhobo zombane
●Ukuveliswa kwe-LED:
Isetyenziselwa ukulungisa i-sapphire okanye i-SiC substrate, kwaye njengesixhobo sokufudumeza kwinkqubo ye-MOCVD, ukuqinisekisa ukufana kokukhula kwe-epitaxial, ukuphucula ukusebenza kakuhle kunye nomgangatho wokukhanya kwe-LED.
● I-diode yelaser:
Njengesixhobo esichanekileyo, esilungisayo nesifudumezayo ukuqinisekisa uzinzo lobushushu benkqubo, siphucula amandla okukhupha kunye nokuthembeka kwe-laser diode.
3. Umatshini wokulungisa ngokuchanekileyo
●Ukucubungula izinto ezibonakalayo:
Isetyenziselwa ukulungisa izinto ezichanekileyo ezifana neelensi ze-optical kunye nezihluzi ukuqinisekisa ukuchaneka okuphezulu kunye nokungcola okuphantsi ngexesha lokucubungula, kwaye ifanelekile kwi-machining enamandla aphezulu.
●Ukulungiswa kweseramikhi:
Njengesixhobo sokuqina okuphezulu, ifanelekile ekuchwethezeni ngokuchanekileyo izinto zeseramikhi ukuqinisekisa ukuchaneka koomatshini kunye nokuhambelana phantsi kobushushu obuphezulu kunye nendawo enobungozi.
4. Uvavanyo lwezenzululwazi
●Uvavanyo lobushushu obuphezulu:
Njengesixhobo sokulungisa iisampulu kwiindawo ezinobushushu obuphezulu, sixhasa uvavanyo lobushushu obugqithisileyo obungaphezulu kwe-1600°C ukuqinisekisa ukufana kobushushu kunye nozinzo lwesampulu.
●Uvavanyo lweVacuum:
Njengesampulu yokulungisa kunye nokuthwala ubushushu kwindawo engenamoya, ukuqinisekisa ukuchaneka kunye nokuphindaphinda kovavanyo, olufanelekileyo kwi-vacuum coating kunye nonyango lobushushu.
Iinkcukacha zobugcisa:
| (Impahla yezinto eziphathekayo) | (Iyunithi) | (i-ssic) | |
| (Umxholo weSiC) |
| (Ubunzima)% | >99 |
| (Ubungakanani obuqhelekileyo bengqolowa) |
| imakroni | 4-10 |
| (Ubuninzi) |
| kg/dm3 | >3.14 |
| (I-porosity ebonakalayo) |
| I-Vo1% | <0.5 |
| (Ubulukhuni bukaVickers) | I-HV 0.5 | I-GPa | 28 |
| *( Amandla okugobeka) | 20ºC | I-MPa | 450 |
| (Amandla oxinzelelo) | 20ºC | I-MPa | 3900 |
| (Imodulus ye-Elastic) | 20ºC | I-GPa | 420 |
| (Ukuqina kokwaphuka) |
| I-MPa/m'% | 3.5 |
| (Ukuqhuba kwe-thermal) | 20°ºC | W/(m*K) | 160 |
| (Ukuxhathisa) | 20°ºC | Ohm.cm | 106-108 |
|
| a(RT**...80ºC) | K-1*10-6 | 4.3 |
|
|
| oºC | 1700 |
Ngeminyaka emininzi yokuqokelelana kobuchwephesha kunye namava kushishino, i-XKH iyakwazi ukulungelelanisa iiparameter eziphambili ezifana nobukhulu, indlela yokufudumeza kunye noyilo lwe-vacuum adsorption ye-chuck ngokweemfuno ezithile zomthengi, ukuqinisekisa ukuba imveliso ilungelelaniswe ngokugqibeleleyo nenkqubo yomthengi. Ii-SiC silicon carbide ceramic chucks ziye zaba zizinto ezibalulekileyo ekucutshungulweni kwe-wafer, ukukhula kwe-epitaxial kunye nezinye iinkqubo ezibalulekileyo ngenxa yokuqhuba kwazo kakuhle kobushushu, uzinzo lobushushu obuphezulu kunye nozinzo lweekhemikhali. Ingakumbi ekuvelisweni kwezixhobo ze-semiconductor zesizukulwana sesithathu ezifana ne-SiC kunye ne-GaN, imfuno yee-silicon carbide ceramic chucks iyaqhubeka nokukhula. Kwixesha elizayo, ngophuhliso olukhawulezayo lwe-5G, izithuthi zombane, ubukrelekrele bokwenziwa kunye nezinye iiteknoloji, amathuba okusetyenziswa kwee-silicon carbide ceramic chucks kushishino lwe-semiconductor aya kuba banzi.
Umzobo oneenkcukacha
