I-SIC Ceramic Chutck tray ceram ceraic ceraction ye-CUPS
Iimpawu zezinto ezibonakalayo:
I-1.High Shorest: I-MOHS Farty ye-Silicon Carbide yi-9.2.5, yesibini kuphela kwidayimani, enokungaphazamiseki ngamandla.
2. Ukuqhubela phambili kwe-thermal ephezulu: Ukuqhubela phambili kwe-sermal ye-selicon carbide kuphakama i-120-200 W / G · k, enokuthi isebenzise ubushushu ngokukhawuleza kwaye ilungele imeko yendawo yobushushu ephezulu.
3. Ukwanda kwe-thermal ophantsi ye-thermal ye-cound: I-Silicon Carbide ye-carrmil ye-thermal ye-therm iphantsi (4.0-4.5 × 10 × 10 × 10 × 10⁻⁶ / k), isenokugcina uzinzo kwiqondo lokuhlala.
4. Uzinzo lwekhemikhali: i-silicon carbide acid kunye ne-alkali corrosion, efanelekileyo ukuze usetyenziswe kwindawo yokugcina imichiza.
5. Amandla oMatshini abaPhezulu: I-Silicon Carbide inamandla aphezulu egodini kunye namandla ecinezelayo, kwaye inokumelana noxinzelelo olukhulu lwendlela.
Iimbonakalo:
I-1.in ishishini le-semicondcuctor, i-wafs emxinwa kakhulu kufuneka ibekwe kwikomityi ye-vacuum, i-vacuum curtion isetyenziselwa ukulungisa ii-wafring, kwaye inkqubo yokutyibilika, ukucofa, ukucocwa, ukucocwa kuya kwenziwa kwi-wafer.
I-2.silicicon Carbide msungud inesidima esihle se-duxing, sinokulitshisa ngokufanelekileyo ixesha lokuxhuzula kunye ne-waxing, ukuphucula ukusebenza kwemveliso.
I-3.silicicicn Carbide vacuum sucker ikwane-Acid kunye ne-Alkali Corrosion.
4.Clepated nePlayithi yeSiko leCoursum, nciphisa ukulayisha kunye nokutsala ixesha lokufudumeza kunye nexesha lokupholisa, ukuphucula ukusebenza kakuhle; Kwangelo xesha, inokunciphisa ukunxila phakathi kweepleyiti ezingaphezulu nezezantsi, gcina ukuchaneka kweplani elungileyo, kwaye kwandise ubomi benkonzo malunga ne-40%.
5.Inxalenye yezinto zincinci, ubunzima bokukhanya. Kulula ukuba abaqhubi bathwale i-Pallets, ukunciphisa umngcipheko womonakalo wokungqubana obangelwe bubunzima bezothutho malunga ne-20%.
6.Pize: I-Diaceter ephezulu ye-640mm; Iflethi: 3um okanye ngaphantsi
Intsimi yesicelo:
1. Imveliso ye-semicondcucy
● Ukulungiswa kwelanga:
Ukulungiswa kwe-wafer kwifoto ye-Phototithography, i-etching, ifilimu yefilimu yefilimu kunye nezinye iinkqubo, ekuqinisekiseni ukungangqinelani okuphakathi kwenkqubo. Ubushushu bayo beqondo lobushushu kunye nokuchasana ne-corrosion ilungele iindawo ezinobunkunkqele ze-semicondyctor.
● Ukukhula kuka-Entitaial:
Ukukhula kwe-SIC okanye i-gen pitatial pitatial, njengokuthwala ubushushu kunye nokulungisa ii-wifr, ukuqinisekisa ubushushu obufanayo kunye nekristali kubushushu obuphezulu, ukuphucula ukusebenza kwesixhobo.
2. Izixhobo zefoto
● Imveliso ye-LED:
Isetyenziselwa ukulungisa i-saphire okanye i-SIC Ristrest, kwaye njengomntu ophethe ubushushu kwinkqubo ye-MOCVD, ukuqinisekisa ukufana kwesitayile, ukuphucula ukusebenza kwe-LUMINOOD kunye nomgangatho.
● I-Laser Diode:
Njengomgca ophambili wokuchaneka, ukulungisa kunye nokufudumeza indawo yokuqinisekisa ukuzinza kweqondo lobushushu, ukuphucula amandla okukhupha kunye nokuthembeka kwe-laser diode.
3. Umatshini wokuchaneka
● Ukulungiswa kwecandelo elifanelekileyo:
Isetyenziselwa ukulungisa izinto ezichanekileyo ezinjengeelensi zokukhetha kunye neefilitha zokuqinisekisa ukuchaneka okuphezulu kunye nokungcoliseka okuphantsi ngexesha lokusebenza, kwaye kufanelekile ukuba kubekho ngokuqina.
● Ukulungiswa kwe-ceramic:
Njengommiselo ophezulu wokuzinza, kufanelekile ukuba kwenziwe i-ceramic izixhobo ze-ceramic ukuqinisekisa ukuchaneka komatshini kunye nokungqinelana phantsi kobushushu obuphezulu kunye nendawo yokugcina izinto.
4. Uvavanyo lwenzululwazi
● Ukuvavanywa kobushushu obuphezulu:
Njengesixhobo semodeli yesampulu kwimimandla yobushushu obuphezulu, ixhasa iimvavanyo zobushushu ezigqithisileyo ngaphezulu kwe-1600 ° C ukuqinisekisa ubushushu obufanayo kunye nokuzinza kwesampulu.
● Uvavanyo lwe-vacuum:
Njengolungiso lwesampulu kunye nokufudumeza kwindalo esingqongileyo, ukuqinisekisa ukuchaneka kunye nokuphinda-phinda koluvo, kufanelekile ukuba kunyango kunye nonyango lobushushu.
Inkcazo yobugcisa:
(Ipropathi yempahla) | (Iyunithi) | (i-SSIC) | |
(Umxholo we-SIC) |
| (I-WT)% | > 99 |
(I-avareji ephakathi) |
| micron | I-4-10 |
(Ukuxinana) |
| kg / dm3 | > 3.14 |
(I-Porosity) |
| VO1% | <0.5 |
(I-Viskers) | Hv 0.5 | I-GPA | 28 |
* (Amandla e-flexi) | 20ºc | Mpa | I-450 |
(Amandla e-comperres) | 20ºc | Mpa | 3900 |
(I-elastic modyul) | 20ºc | I-GPA | I-420 |
(Ukuqhekeka kokuqhelisela) |
| Mpa / m '% | 3.5 |
(Ukuqhutywa kwe-thermal) | I-20 ºC | W / (m * k) | I-160 |
(Ukuxhathisa) | I-20 ºC | Ohm.cm | I-106-108 |
| A (RT ** ... 80ºC) | K-1 * 10-6 | 4.3 |
|
| oºc | I-1700 |
Ngeminyaka yokuqokelelwa kobuchwephesha kunye namava oshishino, i-XKH ikwazile ukulungisa imilinganiselo ephambili efana nobukhulu, indlela yokufudumeza kunye noyilo lwe-adsuum ngokweemfuno ezithile zomthengi, ukuqinisekisa ukuba imveliso ihlengahlengiswa ngokugqibeleleyo kwinkqubo yomthengi. I-SIC Slicon Carbide Ceramic Chucks ingaba zenziwe izinto ezingafunekiyo kwiSoft, ukukhula kwe-epitamatial kunye nezinye iinkqubo eziphambili zokuphumelela, ukuzinza kweqondo lobushushu oluphezulu kunye nokuzinza kweqondo lobushushu. Ingakumbi ekwenzeni izinto zokwenza izinto zesithathu ze-semicondcuctor ezifana ne-SIC kunye ne-Gan, imfuno ye-selicon carbide cloramic cucks iyaqhubeka ikhula. Kwixesha elizayo, kunye nophuhliso olukhawulezileyo lwama-5g, izithuthi zombane, ubukrelekrele bobuchwephesha kunye nolunye uhlobo lwetekhnoloji, amathemba okusebenza, amathemba okusebenza e-Cemickoc Cemirac Chucks kwicandelo le-semicondcucre kwicandelo le-semicondcucre kwishishini le-semicondcucric liya kubanzi.




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