Izixhobo zokuPhakamisa iLaser zeSemiconductor

Umfanekiso oPhambili weZixhobo zokuPhakamisa iLaser zeSemiconductor

Inkcazo emfutshane:

Isixhobo sokuLinda iLaser seSemiconductor simele isisombululo sesizukulwana esilandelayo sokunciphisa i-ingot ephucukileyo ekucutshungulweni kwezinto ze-semiconductor. Ngokungafaniyo neendlela zemveli zokuyila ezixhomekeke ekugayweni koomatshini, ukusarha ucingo lwedayimani, okanye ukucwangciswa kweekhemikhali, eli qonga lisekelwe kwi-laser linikezela ngenye indlela engenakunxibelelana, engonakalisiyo yokususa iileya ezincinci kakhulu kwii-ingots ze-semiconductor ezinkulu.

Ilungiselelwe izixhobo ezibuthathaka nezinexabiso eliphezulu ezifana ne-gallium nitride (GaN), i-silicon carbide (SiC), i-sapphire, kunye ne-gallium arsenide (GaAs), i-Semiconductor Laser Lift-Off Equipment yenza ukuba iifilimu ezikwi-wafer-scale zikwazi ukunqunyulwa ngokuchanekileyo ngqo kwi-crystal ingot. Le teknoloji iphucukileyo inciphisa kakhulu inkunkuma yezinto, iphucula ukuveliswa kwayo, kwaye iphucula ukuthembeka kwe-substrate - zonke ezi zinto zibalulekileyo kwizixhobo zesizukulwana esilandelayo kwi-electronics enamandla, iinkqubo ze-RF, ii-photonics, kunye nee-micro-displays.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seMveliso yeZixhobo zokuPhakamisa iLaser

Ngokugxininisa kulawulo oluzenzekelayo, ukwakheka kwemitha, kunye nohlalutyo lokunxibelelana kwezinto ze-laser, izixhobo ze-Semiconductor Laser Lift-Off zenzelwe ukuhlanganiswa ngokungenamthungo kwimisebenzi yokwenziwa kwe-semiconductor ngelixa zixhasa ukuguquguquka kwe-R&D kunye nokukhula kwemveliso ngobuninzi.

Ubuchwepheshe kunye noMgaqo-nkqubo woKusebenza weZixhobo zokuPhakamisa iLaser

Inkqubo eyenziwa yiSemiconductor Laser Lift-Off Equipment iqala ngokukhanyisa i-donor ingot ukusuka kwelinye icala kusetyenziswa i-ultraviolet laser beam enamandla aphezulu. Le beam igxile kakhulu kubunzulu obuthile bangaphakathi, ngokuqhelekileyo kwi-interface yobunjineli, apho ukufunxwa kwamandla kwandiswa kakhulu ngenxa yokungafani kwe-optical, thermal, okanye iikhemikhali.

Kule leya yokufunxa amandla, ukufudumeza okukufutshane kukhokelela ekuqhushumbeni okukhawulezayo, ukwanda kwegesi, okanye ukubola kweleya ephakathi (umz., ifilimu yoxinzelelo okanye i-oxide ye-sacrifice). Oku kuphazamiseka okulawulwa ngokuchanekileyo kubangela ukuba leya ephezulu yekristale - enobukhulu obuzii-micrometers ezilishumi - isuke kwi-ingot yesiseko ngokucocekileyo.

Isixhobo sokuLinda iLaser seSemiconductor sisebenzisa iintloko zokuskena ezihambelanayo nentshukumo, ulawulo lwe-z-axis olucwangcisiweyo, kunye ne-reflectometry yexesha langempela ukuqinisekisa ukuba i-pulse nganye inika amandla ngqo kwindawo ekujoliswe kuyo. Esi sixhobo sinokucwangciswa nge-burst-mode okanye i-multi-pulse capabilities ukuphucula ukugungqa kwe-detachment kunye nokunciphisa uxinzelelo olushiyekileyo. Okubalulekileyo kukuba, kuba umqadi welaser awukaze uqhagamshelane nezinto ngokwasemzimbeni, umngcipheko wokuqhekeka, ukugoba, okanye ukuqhekeka komphezulu uncitshiswa kakhulu.

Oku kwenza indlela yokunciphisa i-laser lift-off ibe yinto etshintsha umdlalo, ngakumbi kwiindawo apho kufuneka ii-wafers ezithe tyaba kakhulu nezincinci kakhulu ezine-sub-micron TTV (Total Thickness Variation).

Ipharamitha yezixhobo zokuphakamisa i-laser ze-semiconductor

Ubude bamaza	I-IR/SHG/THG/FHG
Ububanzi bePulse	I-Nanosecond, i-Picosecond, i-Femtosecond
Inkqubo yokubona	Inkqubo ye-optical ezinzileyo okanye inkqubo ye-Galvano-optical
Inqanaba le-XY	500 mm × 500 mm
Uluhlu Lokucubungula	160 mm
Isantya sokuhamba	Ubuninzi yi-1,000 mm/sec
Ukuphindaphinda	±1 μm okanye ngaphantsi
Ukuchaneka kweSikhundla esipheleleyo:	±5 μm okanye ngaphantsi
Ubungakanani beWafer	2–6 intshi okanye ezenziwe ngokwezifiso
Ulawulo	IWindows 10,11 kunye nePLC
I-Voltage yoNikezo lwaMandla	I-AC 200 V ±20 V, Isigaba esinye, 50/60 kHz
Ubukhulu bangaphandle	2400 mm (W) × 1700 mm (D) × 2000 mm (H)
Ubunzima	1,000 kg

Ukusetyenziswa kweZixhobo zokuPhumela iLaser kwiZinto zoshishino

Izixhobo zokuPhucula iLaser ezisebenzisa iSemiconductor zitshintsha ngokukhawuleza indlela ezilungiswa ngayo izixhobo kwiindawo ezininzi ze-semiconductor:

Izixhobo zamandla ze-GaN ezithe nkqo zezixhobo zokuphakamisa i-laser

Ukukhutshelwa kweefilimu zeGaN-on-GaN ezincinci kakhulu ezivela kwii-ingots ezinkulu kwenza ukuba uyilo lwe-vertical conduction lusebenze kwaye kusetyenziswe kwakhona ii-substrates ezibizayo.

Ukunciphisa i-SiC Wafer kwizixhobo zeSchottky kunye neMOSFET

Inciphisa ubukhulu bomaleko wesixhobo ngelixa igcina i-substrate planarity — ilungele ukusetyenziswa kwamandla e-elektroniki ngokukhawuleza.

Izixhobo ze-LED ezisekwe kwiSapphire kunye neziBoniso zeZixhobo zokuLinda ngeLaser

Ivumela ukwahlulahlula kakuhle iileya zesixhobo kwiibhowule zesafire ukuxhasa imveliso ye-micro-LED encinci, eyenziwe ngcono ngobushushu.

Ubunjineli bezinto ze-III-V zeZixhobo zokuPhakamisa iLaser

Iququzelela ukwahlulwa kwee-GaAs, i-InP, kunye nee-AlGaN layers ukuze kuhlanganiswe i-optoelectronic ngendlela ephucukileyo.

Ukwenziwa kweThin-Wafer IC kunye neSensor

Ivelisa iileya ezincinci ezisebenzayo zee-sensors zoxinzelelo, ii-accelerometers, okanye ii-photodiodes, apho ubukhulu buyingxaki yokusebenza.

Izixhobo ze-elektroniki eziguquguqukayo nezingabonakaliyo

Ilungiselela ii-substrates ezibhityileyo kakhulu ezifanelekileyo kwizibonisi eziguquguqukayo, iisekethe ezinxitywayo, kunye neefestile ezikrelekrele ezibonakala ngokucacileyo.

Kwindawo nganye kwezi, izixhobo zokuphakamisa iLaser zeSemiconductor zidlala indima ebalulekileyo ekwenzeni kube lula ukwenziwa kwezinto zibe zincinci, ukusetyenziswa kwakhona kwezinto, kunye nokwenza lula iinkqubo.

Imibuzo Ebuzwa Rhoqo (FAQ) yeZixhobo zokuPhumela kwiLaser

Q1: Bungakanani ubukhulu obuncinci endinokubufikelela ngokusebenzisa isixhobo sokuphakamisa i-Laser se-Semiconductor?
A1:Ngokwesiqhelo phakathi kwe-10–30 microns kuxhomekeke kwizinto ezisetyenzisiweyo. Le nkqubo inokwenza iziphumo zibe ncinci xa kulungiselelwa izinto ezintsha.

Umbuzo 2: Ngaba oku kungasetyenziselwa ukunqumla ii-wafers ezininzi kwi-ingot efanayo?
A2:Ewe. Abathengi abaninzi basebenzisa indlela yokuphakamisa i-laser ukwenza ukukhupha ngokulandelelana kweengqimba ezininzi ezincinci kwi-ingot enye enkulu.

Q3: Zeziphi iimpawu zokhuseleko ezibandakanyiweyo ekusebenzeni nge-laser enamandla aphezulu?
A3:Ii-enclosures zeKlasi yoku-1, iinkqubo zokutshixa, ukhuselo lwemitha, kunye nokuvala okuzenzakalelayo zonke zisemgangathweni.

Umbuzo 4: Le nkqubo ithelekiswa njani neesarha zentambo yedayimani ngokwexabiso?
A4:Nangona i-capex yokuqala inokuba phezulu, ukukhutshelwa nge-laser kunciphisa kakhulu iindleko ezisetyenziswayo, umonakalo we-substrate, kunye namanyathelo okucubungula emva koko - kunciphisa iindleko zizonke zobunini (TCO) ixesha elide.

Umbuzo 5: Ngaba le nkqubo inokwandiswa ibe zii-ingots eziyi-6-intshi okanye eziyi-8-intshi?
A5:Ngokuqinisekileyo. Eli qonga lixhasa ukuya kuthi ga kwii-substrates ezili-12-intshi ezinokusasazwa kwemisebe efanayo kunye nezigaba zokunyakaza ezinkulu.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.