ISemi-Insulating SiC kwiSi Composite Substrates

Inkcazelo emfutshane:

I-Semi-insulated SiC kwi-Si composite substrate yimathiriyeli yesemiconductor equka ukubeka umaleko we-silicon carbide (SiC) kwi-silicon substrate.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Izinto	Inkcazo	Izinto	Inkcazo
Ububanzi	150±0.2mm	Ukuqhelaniswa	<111>/<100>/<110> njalo njalo
Iipolytype	4H	Uhlobo	P/N
Ukuxhathisa	≥1E8ohm·cm	Ukucaba	Isicaba/Inotshi
Ukugqithisela umaleko Ukutyeba	≥0.1μm	I-Edge Chip, i-Scratch, i-Crack (ukuhlolwa okubonakalayo)	Akukho nanye
Ilize	≤5ea/wafer (2mm>D>0.5mm)	TTV	≤5μm
Uburhabaxa bangaphambili	Ra≤0.2nm (5μm*5μm)	Ukutyeba	500/625/675±25μm

Le ndibaniselwano ibonelela ngenani leenzuzo kwimveliso yombane:

Ukuhambelana: Ukusetyenziswa kwe-silicon substrate kwenza ukuba ihambelane neendlela eziqhelekileyo zokusetyenzwa kwe-silicon kwaye ivumela ukudibanisa kunye neenkqubo ezikhoyo zokuvelisa i-semiconductor.

Ukusebenza kobushushu obuphezulu: I-SiC ine-conductivity egqwesileyo ye-thermal kwaye inokusebenza kumaqondo obushushu aphezulu, iyenze ilungele amandla aphezulu kunye nosetyenziso lwe-elektroniki oluhamba rhoqo.

I-Voltage ye-High Breakdown Voltage: Izixhobo ze-SiC zine-voltage ephezulu yokuqhawula kwaye inokumelana namasimi aphezulu ombane ngaphandle kokuphuka kombane.

UkuNcitshiswa koLahleko lwaMandla: Ii-substrates ze-SiC zivumela ukuguqulwa kwamandla okusebenzayo kunye nokulahlekelwa kwamandla aphantsi kwizixhobo zombane xa kuthelekiswa nezinto eziqhelekileyo ezisekelwe kwi-silicon.

I-wide bandwidth: I-SiC ine-bandwidth ebanzi, evumela ukuphuhliswa kwezixhobo zombane ezinokusebenza kumaqondo aphezulu kunye nokuxinana kwamandla aphezulu.

Ke i-semi-insulating SiC kwi-Si composite substrates idibanisa ukuhambelana kwe-silicon kunye neempawu eziphezulu zombane kunye ne-thermal ye-SiC, iyenza ilungele ukusetyenziswa kwe-electronics ephezulu yokusebenza.

Ukupakisha kunye nokuhanjiswa

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