ISapphire Ingot Isixhobo sokuKhulisa iCzochralski CZ Indlela yokuVelisa ii-2inch-12inch zeSapphire Wafers

ISapphire Ingot Isixhobo sokuKhulisa iCzochralski CZ Indlela yokuVelisa i2inch-12inch iiWafers zeSapphire oFakelweyo

Inkcazelo emfutshane:

Isixhobo sokuKhulisa iSapphire Ingot (iNdlela yeCzochralski) yinkqubo yokusika eyenzelwe ukucoceka okuphezulu, okunesiphako esisezantsi sokukhula kwesafire enye yekristale. Indlela ye-Czochralski (CZ) yenza ukuba kube lula ukulawula isantya sokutsalwa kwekristale yembewu (0.5-5 mm/h), isantya sokujikeleza (5–30 rpm), kunye nemithamo yobushushu kwi-iridium crucible, ivelisa iikristale ezizii-axisymmetric ukuya kuthi ga kwi-intshi ezili-12 (300 mm) ububanzi. Esi sixhobo sixhasa i-C/A-plane crystal orientation control, eyenza ukukhula kwe-optical-grade, electronic-grade, kunye nesafire edokiweyo (umz., Cr³⁺ ruby, Ti³⁺ star sapphire).

I-XKH ibonelela ngezisombululo zokuphela-ukuya-ekupheleni, kubandakanya ukwenziwa kwezixhobo zokwenza (i-2-12-intshi ye-intshi ye-wafer), ukuphuculwa kwenkqubo (i-defect defect <100/cm²), kunye noqeqesho lobugcisa, kunye nemveliso yenyanga ye-5,000+ wafers, kwizicelo ezifana ne-LED substrates, i-GaN epitaxy, kunye nokupakishwa kwe-semiconductor.

Thumela i-imeyile kuthi

Iimbonakalo

UmGaqo wokuSebenza

Indlela ye-CZ isebenza ngala manyathelo alandelayo:
1. I-Melting Raw Materials: Ucoceko oluphezulu lwe-Al₂O₃ (ubunyulu> 99.999%) luyancibilika kwi-iridium crucible kwi-2050-2100 ° C.
2. I-Crystal ye-Seed Intshayelelo: I-crystal yembewu iyancipha kwi-melt, ilandelwa ngokukhawuleza ukutsala ukwenza intamo (i-diameter <1 mm) ukuphelisa ukuchithwa.
3. Ukuqulunqwa kwamagxa kunye nokuKhula koBuninzi: Isantya sokutsala sincitshiswe kwi-0.2-1 mm / h, ngokuthe ngcembe sandise i-crystal diameter kwi-target target (umz, i-4-12 intshi).
4. I-Anealing and Cooling: I-crystal ipholile kwi-0.1-0.5 ° C / min ukunciphisa ukuxhatshazwa kwe-thermal-induced cracking.
5. Iindidi zeCrystal ezihambelanayo:
IBanga loMbane: Ii-semiconductor substrates (TTV <5 μm)
Ibakala elibonakalayo: iifestile ze-UV laser (ukudluliselwa>90%@200 nm)
Izahluko eziDoped: IRuby (Cr³⁺ yoxinaniso 0.01–0.5 wt.%), ityhubhu yesafire eluhlaza

Amacandelo eNkqubo engundoqo

1. Inkqubo yokunyibilikisa
I-Iridium Crucible: Imelana ne-2300 ° C, imelana nomhlwa, iyahambelana nezinyibiliko ezinkulu (100-400 kg).
I-Induction Heating Furnace: Ulawulo lobushushu obuzimeleyo kwindawo ezininzi (± 0.5°C), udidi oluphuculweyo lwe-thermal.

2. Ukutsalwa kunye neNkqubo yokujikeleza
I-High-Precision Servo Motor: Ukutsalwa kwesisombululo 0.01 mm/h, ukugxila okujikelezayo <0.01 mm.
IMagnetic Fluid Seal: Usasazo olungaqhagamshelwanga lukhula ngokuqhubekayo (>72 iiyure).

3. Inkqubo yokulawula iThermal
Ulawulo lwe-PID oluvaliweyo lwe-Loop: Uhlengahlengiso lwamandla exesha lokwenyani (50–200 kW) ukuzinzisa indawo eshushu.
Ukukhuselwa kwegesi engasebenziyo: Umxube we-Ar/N₂ (ubunyulu obungama-99.999%) ukunqanda i-oxidation.

4. Ukuzenzekela kunye nokuBeka iliso
UkuJonga i-Diameter ye-CCD: Ingxelo yexesha lokwenyani (ukuchaneka ± 0.01 mm).
I-Infrared Thermography: Ibeka iliso kwimopholoji yojongano olululwelo oluqinileyo.

CZ vs. KY Indlela yokuthelekisa

IParameter	Indlela yeCZ	Indlela ye-KY
Ubukhulu Ubungakanani beCrystal	12 intshi (300 mm)	400 mm (ingot emile okwepere)
I-Defect Density	<100/cm²	<50/cm²
Izinga lokuKhula	0.5-5 mm / h	0.1–2 mm/h
Ukusetyenziswa kwamandla	50–80 kWh/kg	80–120 kWh/kg
izicelo	I-substrates ze-LED, i-GaN epitaxy	Iifestile ze-Optical, ii-ingots ezinkulu
Iindleko	Ephakathi (utyalo-mali lwezixhobo eziphezulu)	Phezulu (inkqubo entsonkothileyo)

Usetyenziso oluphambili

1. Ishishini leSemiconductor
I-GaN Epitaxial Substrates: 2–8-intshi yewafers (TTV <10 μm) yeeMicro-LEDs kunye ne-laser diode.
IiWafers ze-SOI: Uburhabaxa bomphezulu <0.2 nm yeetshiphusi ezidityanisiweyo ze-3D.

2. Optoelectronics
IiWindows zeLaser ye-UV: Ukumelana ne-200 W/cm² yoxinzelelo lwamandla kwi-lithography optics.
Amacandelo e-Infrared: I-coefficient yokufunxa <10⁻³ cm⁻¹ yomfanekiso we-thermal.

3. Ii-Electronics zabathengi
IKhamera ye-Smartphone Igubungela: Ubulukhuni be-Mohs 9, 10 × ukuphuculwa kokuchasa umkrwelo.
Iziboniso zeSmartwatch: Ukutyeba 0.3-0.5 mm, ukuhanjiswa> 92%.

4. Ukhuselo kunye ne-Aerospace
I-Nuclear Reactor Windows: Ukunyamezela imitha ukuya kuthi ga kwi-10¹⁶ n/cm².
Izipili zeLaser eziPhezulu-Amandla: Ukuguqulwa kweThermal <λ/20@1064 nm.

Iinkonzo ze-XKH

1. ULungiselelo lweZixhobo
Uyilo lweGumbi eliScalable: Φ200–400 mm ulungelelwaniso lwe-2–12-intshi yemveliso ye-wafer.
I-Doping Flexibility: Ixhasa umhlaba onqabileyo (Er/Yb) kunye noguqulo-yesinyithi (Ti/Cr) idoping kwiipropathi ezilungelelanisiweyo ze-optoelectronic.

2. Inkxaso yokuphela ukuya esiphelweni
Inkqubo yokuPhumeza: Iiresiphi eziqinisekisiweyo kwangaphambili (50+) ze-LED, izixhobo zeRF, kunye nezinto ezenziwe lukhuni ngemitha.
Inethiwekhi yeNkonzo yeHlabathi: I-24/7 yoxilongo olukude kunye nokugcinwa kwendawo kunye newaranti yeenyanga ezingama-24.

3. Ukulungiswa komlambo
I-Wafer Fabrication: Ukusika, ukucola, kunye nokupholisha ii-intshi ezi-2-12-intshi (i-C/A-plane).
Iimveliso ezongeziweyo kwixabiso:
Amacandelo okukhanya: iifestile ze-UV/IR (0.5-50 mm ubukhulu).
Izixhobo zeBanga lobucwebe: Cr³⁺ ruby (isiqinisekiso se-GIA), iTi³⁺ star sapphire.

4. UbuNkokheli boBugcisa
Iziqinisekiso: Iiwafers ezithobela i-EMI.
Amalungelo awodwa omenzi wechiza: Amalungelo awodwa omenzi wechiza kwindlela entsha yeCZ.

Ukuqukumbela

Isixhobo sendlela ye-CZ sihambisa ukuhambelana komgangatho omkhulu, amaxabiso aphantsi kakhulu, kunye nozinzo oluphezulu lwenkqubo, nto leyo iyenza ibe luphawu loshishino lwe-LED, isemiconductor, kunye nezicelo zokhuselo. I-XKH inikezela ngenkxaso ebanzi ukusuka ekusetyenzisweni kwezixhobo ukuya kwi-post-processing process, evumela ukuba abathengi bafikelele kwixabiso eliphantsi, imveliso yekristale yesafire ephezulu.