Iimveliso
-
I-silicon ye-carbide ye-ceramic tray yokufunxa i-Silicon carbide ityhubhu ye-ceramic ibonelela ngobushushu obuphezulu be-sintering ukusetyenzwa kwesiko
-
Amandla aphezulu esilicon carbide ityhubhu yeceramic SIC iintlobo ezahlukeneyo zokuxhathisa umlilo
-
I-SiC ceramic chuck tray Iikomityi zokufunxa zeCeramic ezichanekileyo zokwenziwa ngokwezifiso
-
Indlela yeSapphire ifayibha 75-500μm LHPG ingasetyenziselwa isafire fiber iqondo lobushushu eliphakamileyo
-
I-Sapphire fiber enye ikristale i-Al₂O₃ iqondo eliphezulu lokunyibilikisa i-optical transmittance 2072℃ inokusetyenziselwa imathiriyeli yefestile ye-laser.
-
Ipatheni yeSapphire Substrate PSS 2inch 4inch 6inch ICP eyomileyo etching ingasetyenziselwa chips LED
-
Itafile encinci ye-laser punching machine 1000W-6000W ubuncinane bokuvula i-0.1MM ingasetyenziselwa izinto zentsimbi zeglasi yeceramic.
-
ISapphire thermocouple ukhuseleko ityhubhu yeemveliso ezisetyenziswa kwi-crystal Single Al2O3
-
Ukuchaneka okuphezulu umatshini wokomba welaser wesafire ye-ceramic imathiriyeli enqabileyo ethwele umbhobho wokugrumba
-
ISapphire ikristale enye Al2O3 isithando somlilo sokukhula KY indlela yeKyropoulos imveliso yomgangatho ophezulu wekristale yesafire
-
2 intshi 4 intshi 6 intshi enePattered Sapphire Substrate (PSS) ekukhuliswe kuyo imathiriyeli yeGaN enokusetyenziswa kwizibane zeLED
-
I-Monocrystalline silicon yokukhulisa iziko le-monocrystalline silicon ingot inkqubo yokukhula ubushushu ukuya kuthi ga kwi-2100 ℃