Iimveliso
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I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade
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Isiseko sekopolo I-Copper cubic I-Single crystal Cu wafer 100 110 111 I-Orientation SSP DSP ubumsulwa 99.99%
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I-Copper substrate enye yekristale yeCu wafer 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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I-Nickel wafer Ni Substrate 5x5x0.5/1mm 10x10x0.5/1mm 20x20x0.5/1mm
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I-Ni Substrate/i-wafer isakhiwo se-cubic sekristale enye a=3.25A uxinano 8.91
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I-Magnesium single crystal Substrate I-Mg wafer ubumsulwa 99.99% 5x5x0.5/1mm 10x10x0.5/1mm20x20x0.5/1mm
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I-Magnesium Single crystal Mg wafer DSP SSP Orientation
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I-aluminium metal single crystal substrate ecoliweyo necutshungulwayo ngobukhulu bokwenziwa kwesekethe edibeneyo
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Isiseko se-aluminiyam Ukuqhelaniswa kwesiseko se-aluminiyam esibukristale enye 111 100 111 5×5×0.5mm
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I-Quartz Glass Wafer JGS1 JGS2 BF33 Wafer 8inch 12inch 725 ± 25 um Okanye eyenziwe ngokwezifiso
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ityhubhu yesafire yeCZmethod KY indlela yokumelana nobushushu obuphezulu i-Al2O3 99.999% isafire enye yekristale
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uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD