Iimveliso
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Intonga yokuphakamisa iSapphire yeShishini kunye nePin, iPin yeSapphire ye-Al2O3 yoBulukhuni obuphezulu bokuphatha iWafer, inkqubo yeRadar kunye nokucubungula iSemiconductor - Ububanzi ukusuka kwi-1.6mm ukuya kwi-2mm
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Iphini yokuphakamisa iSapphire eyenzelwe wena, iinxalenye ze-Al2O3 ze-Optical eziQinisekileyo zoGuqulelo lweWafer – Ububanzi obuyi-1.6mm, 1.8mm, bunokulungiselelwa usetyenziso lwemizi-mveliso
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Ilensi yebhola yesafire yebakala le-optical Al2O3 izinto Uluhlu lokudluliselwa 0.15-5.5um Ububanzi 1mm 1.5mm
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ibhola yesafire Dia 1.0 1.1 1.5 yelensi yebhola ye-optical ubunzima obuphezulu bekristale enye
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I-dia yesafire enemibala yesafire yewotshi, i-dia enokwenziwa ngokwezifiso eyi-40 38mm ubukhulu obuyi-350um 550um, ebonakala ngokucacileyo phezulu
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I-InSb wafer eyi-2 intshi eyi-3 intshi engafakwanga i-Ntype P yohlobo lwe-111 100 yee-Infrared Detectors
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Iiwafers ze-Indium Antimonide (InSb) Uhlobo lwe-N Uhlobo lwe-P I-Epi ilungile ingafakwanga Iiwafers ezifakwe idophi okanye i-Ge ezifakwe idophi I-2inch 3inch 4inch ubukhulu Iiwafers ze-Indium Antimonide (InSb)
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Ibhokisi ye-wafer yekhasethi enye ye-intshi ezi-2 Izinto zebhokisi ye-wafer PP okanye iPC Isetyenziswa kwizisombululo zemali ye-wafer 1inch 3inch 4inch 5inch 6inch 12inch ziyafumaneka
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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Indlela yeSapphire yeKY kunye neEFG Ityhubhu yeentonga zesafire ipayipi enoxinzelelo oluphezulu
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I-sapphire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela enokulungiselelwa
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I-GaAs enamandla aphezulu epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwe-laser