Iimveliso
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Indlela yokucubungula umphezulu we-titanium-doped sapphire crystal laser rods
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8inch 200mm Silicon Carbide SiC Wafers 4H-N uhlobo lweMveliso ibakala 500um ubukhulu
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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200mm 8inch GaN kwisapphire Epi-layer wafer substrate
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Ityhubhu yeSapphire KY Indlela yonke ecacileyo Customizable
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I-6 ye-intshi e-Conductive ye-SiC eDityanisiweyo Substrate 4H Ububanzi 150mm Ra≤0.2nm Warp≤35μm
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Isixhobo soKwemba iLaser yeNanosecond ye-Infrared yeGlasi yoKwemba ubukhulu≤20mm
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Isixhobo se-laser ye-Microjet se-wafer yokusika ukusetyenzwa kwezinto ze-SiC
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Umatshini wokusika we-Silicon carbide diamond wire 4/6/8/12 inch SiC ingot processing
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Indlela ye-CVD yokuvelisa izixhobo ezicocekileyo ze-SiC kwi-silicon carbide synthesis synthesis e-1600 ℃
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Ukumelana neSilicon carbide iziko elide lekristale elikhulayo 6/8/12inch intshi yeSiC ingot crystal PVT indlela
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Isikhululo esiphindwe kabini somatshini wesikwere se-monocrystalline yesilicon yentonga yokusetyenzwa kwe-6/8/12 intshi yomphezulu womphezulu Ra≤0.5μm