Iimveliso
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Indlela yokucubungula umphezulu we-titanium-doped sapphire crystal laser rods
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I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos
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200mm 8inch GaN kwisapphire Epi-layer wafer substrate
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Ityhubhu yeSapphire KY Indlela yonke ecacileyo Customizable
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n uhlobo 2 3 4 6 8inch ekhoyo
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isafire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela enokwenziwa ngokwezifiso
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I-Sapphire hair transplant blade ubunzima obuphezulu bokumelana nomhlwa isixhobo sonyango sinokusetyenziswa kubuhle bezonyango
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I-Sapphire blade yokufakelwa kweenwele 0.8mm 1.0mm 1.2mm Ukuqina okuphezulu kokunganyangeki kunye nokumelana nomhlwa
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I-Sapphire optical fiber Al2O3 enye ikristale ecacileyo intambo yekristale intambo yonxibelelwano yonxibelelwano lwefiber 25-500um
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ityhubhu yeSapphire elubala oluphezulu 1inch 2inch 3intshi yesiko yeglasi ubude ityhubhu 10-800 mm 99.999% AL2O3 ukucoceka okuphezulu
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Iringi yesafire eyenziwe ngezinto ezenziwe ngesafire Ubunzima obungafihliyo kunye nokwenza ngokwezifiso iMohs ye9
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Ityhubhu yeSapphire echanekileyo yokuvelisa ityhubhu ecacileyo Al2O3 ikristale exhathisayo ukumelana nobunzima obuphezulu EFG/KY ngokwesiko lokugudisa ububanzi.