Iimveliso
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Ilensi ye-Sic optical 6SP 10x10x10mmt 4H-SEMI HPSI Ubungakanani obulungiselelwe wena
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IiWafers zeLiNbO₃ 2inch-8inch Ubukhulu 0.1 ~ 0.5mm TTV 3µm Ngokwezifiso
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Isithando somlilo sokukhulisa i-SiC Ingot seendlela ze-SiC Crystal TSSG/LPE ezinobubanzi obukhulu
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Izixhobo zokusika i-infrared Picosecond Dual-Platform Laser Cutting ze-Optical Glass/Quartz/Sapphire Processing
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Ilitye elimhlophe leSapphire elinemibala eyenziwe ngezinto zokuhlobisa, elisikwa ngobukhulu obukhululekileyo, lixabiso eliphantsi
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Ingalo yokuphatha isiphelo se-SiC ceramic end effector yokuthwala i-wafer
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Isithando sokukhulisa ikristale se-SiC esingu-4 intshi 6 intshi 8 intshi seNkqubo ye-CVD
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I-6 intshi 4H SEMI Uhlobo lwe-SiC composite substrate Ubukhulu 500μm TTV≤5μm Ibanga le-MOS
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Izixhobo zeSapphire zeWindows Optical Sapphire ezenziwe ngokwezifiso ezine-Precision Polishing
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Ipleyiti/itreyi ye-ceramic ye-SiC ye-4 intshi ye-6 intshi ye-wafer holder ye-ICP
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Ubunzima obuphezulu befestile yesafire eyenziwe ngokwezifiso kwizikrini ze-smartphone
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I-12 intshi ye-SiC Substrate N Uhlobo Olukhulu Ubungakanani Obuphezulu Usetyenziso lweRF