P-uhlobo lwe-SiC substrate ye-SiC wafer Dia2inch imveliso entsha

Inkcazelo emfutshane:

I-intshi ye-2 ye-P-Uhlobo lweSilicon Carbide (SiC) I-Wafer kwi-4H okanye i-6H ye-polytype. Ineepropati ezifanayo njenge-N-uhlobo lweSilicon Carbide (SiC) wafer, njengokumelana nobushushu obuphezulu, i-thermal conductivity ephezulu, ukuhanjiswa kombane okuphezulu, njl. njl Isango leBipolar Transistors (IGBT). Uyilo lwe-IGBT luhlala lubandakanya i-PN junctions, apho i-P-type SiC ingaba luncedo ekulawuleni ukuziphatha kwezixhobo.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-P-type silicon carbide substrates idla ngokusetyenziswa ukwenza izixhobo zamandla, ezifana ne-Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, eyinto yokucima umlilo. MOSFET=IGFET(i-metal oxide semiconductor field effect tyhubhu, okanye isango eligqunyiweyo lesiphumo sentsimi yetransistor). I-BJT(i-Bipolar Junction Transistor, eyaziwa ngokuba yi-transistor), i-bipolar ithetha ukuba kukho iintlobo ezimbini ze-electron kunye nabathwali bemingxuma ababandakanyekayo kwinkqubo yokuqhuba emsebenzini, ngokubanzi kukho i-PN junction ebandakanyekayo ekuqhubeni.

I-2-intshi ye-p-type ye-silicon carbide (SiC) i-wafer ikwi-4H okanye i-6H ye-polytype. Ineempawu ezifanayo kwi-n-type silicon carbide (SiC) wafers, njengokumelana nobushushu obuphezulu, ukuhanjiswa kwe-thermal ephezulu, kunye nokuhanjiswa kombane okuphezulu. Ii-p-type ze-SiC substrates zidla ngokusetyenziswa xa kusenziwa izixhobo zombane, ingakumbi xa kusenziwa ii-insulated-gate bipolar transistors (IGBTs). uyilo lwe-IGBT lubandakanya ukudityaniswa kwe-PN, apho i-p-type SiC inenzuzo yokulawula ukuziphatha kwesixhobo.