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I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch

I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch Umfanekiso obonisiweyo
  • I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch
  • I-substrate ye-P-type SiC wafer ye-SiC imveliso entsha ye-Dia2inch

Inkcazo emfutshane:

I-wafer ye-P-Type Silicon Carbide (SiC) eyi-intshi ezi-2 kwi-polytype ye-4H okanye ye-6H. Ineempawu ezifanayo ne-wafer ye-N-type Silicon Carbide (SiC), efana nokumelana nobushushu obuphezulu, ukuhanjiswa kobushushu obuphezulu, ukuhanjiswa kombane okuphezulu, njl. I-substrate ye-P-type SiC isetyenziselwa ukuvelisa izixhobo zamandla, ngakumbi ukuveliswa kwe-Insulated Gate Bipolar Transistors (IGBT). Uyilo lwe-IGBT ludla ngokubandakanya ii-PN junctions, apho i-P-type SiC inokuba luncedo ekulawuleni ukuziphatha kwezixhobo.


Iimbonakalo

Ii-substrates ze-silicon carbide zohlobo lwe-P zisetyenziswa kakhulu ekwenzeni izixhobo zamandla, ezifana nee-Insulate-Gate Bipolar transistors (IGBTs).

IGBT= MOSFET+BJT, esisitshixo esivulayo. MOSFET=IGFET(ityhubhu yesiphumo sentsimi yesinyithi se-semiconductor, okanye i-transistor yesiphumo sentsimi yesango egqunyiweyo). I-BJT(i-Bipolar Junction Transistor, eyaziwa ngokuba yi-transistor), i-bipolar ithetha ukuba kukho iintlobo ezimbini zee-electron kunye nee-hole carriers ezibandakanyekayo kwinkqubo yokuqhuba umsebenzi, ngokubanzi kukho i-PN junction ebandakanyekayo ekuqhubeni.

I-wafer ye-silicon carbide (SiC) ye-2-intshi ikwi-polytype ye-4H okanye ye-6H. Ineempawu ezifanayo nee-wafer ze-silicon carbide (SiC) ye-n-type, ezifana nokumelana nobushushu obuphezulu, ukuqhuba okuphezulu kobushushu, kunye nokuqhuba okuphezulu kombane. Ii-substrates ze-p-type SiC zihlala zisetyenziswa ekwenzeni izixhobo zamandla, ngakumbi ekwenzeni ii-transistors ze-bipolar ezifakwe i-insulated-gate (IGBTs). Uyilo lwee-IGBT ludla ngokubandakanya ii-PN junctions, apho i-p-type SiC iluncedo ekulawuleni indlela esebenza ngayo isixhobo.

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Umzobo oneenkcukacha

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