ISapphire yikristale enye ye-alumina, yeyenkqubo yekristale ene-tripartite, isakhiwo esinehexagonal, isakhiwo sayo sekristale yenziwe ngeeathom ezintathu zeoksijini kunye neeathom ezimbini ze-aluminiyam kuhlobo lwe-covalent bond, lucwangciswe ngokusondeleyo kakhulu, kunye nekhonkco elomeleleyo kunye namandla e-lattice, ngelixa ikristale yangaphakathi phantse akukho ukungcola okanye iziphene, ngoko ke unesigqubuthelo sombane ebalaseleyo, elubala, conductivity elungileyo thermal kunye neempawu ukuqina eliphezulu. Isetyenziswe ngokubanzi njengefestile ye-optical kunye nezixhobo eziphezulu ze-substrate. Nangona kunjalo, i-molecular structure ye-sapphire iyinkimbinkimbi kwaye kukho i-anisotropy, kwaye impembelelo kwiipropati ezibonakalayo ezihambelanayo nazo zahluke kakhulu ekuqhubeni kunye nokusetyenziswa kwezalathiso zekristale ezahlukeneyo, ngoko ke ukusetyenziswa kwahlukile. Ngokubanzi, i-sapphire substrates zifumaneka kwii-C, R, A kunye ne-M izikhokelo zendiza.
Ukusetyenziswa kweI-C-plane yesafire wafer
I-Gallium nitride (i-GaN) njenge-bandgap ebanzi ye-semiconductor yesizukulwana sesithathu, ine-gap yebhendi ebanzi, ibhondi ye-athom eyomeleleyo, i-thermal conductivity ephezulu, ukuzinza okulungileyo kweekhemikhali (phantse kungagqwaliswa yiyo nayiphi na i-asidi) kunye nekhono elinamandla lokuchasa ukukhanya, kwaye inethemba elibanzi ukusetyenziswa kwe-optoelectronics, ubushushu obuphezulu kunye nezixhobo zamandla kunye nezixhobo ze-microwave ezisebenza ngamaza amaninzi. Nangona kunjalo, ngenxa yeqondo eliphezulu lokunyibilika kwe-GaN, kunzima ukufumana izinto ezinkulu zekristal enye, ngoko ke indlela eqhelekileyo kukuqhuba ukukhula kwe-heteroepitaxy kwezinye ii-substrates, ezineemfuno eziphezulu ze-substrate materials.
Xa kuthelekiswa neisafire substratekunye nobunye ubuso bekristale, i-lattice engaguqukiyo ireyithi yokungahambelani phakathi kwe-C-plane (<0001> orientation) i-sapphire wafer kunye neefilimu ezifakwe kumaqela Ⅲ-Ⅴ kunye ne-Ⅱ-Ⅵ (ezifana ne-GaN) zincinci, kwaye i-lattice ihambelana rhoqo. ireyithi phakathi kwezi zibini kunye neIifilimu ze-AlNenokuthi isetyenziswe njengomaleko we-buffer incinci ngakumbi, kwaye iyahlangabezana neemfuno zokumelana nobushushu obuphezulu kwinkqubo ye-GaN crystallization. Ngoko ke, yinto eqhelekileyo ye-substrate yokukhula kwe-GaN, engasetyenziselwa ukwenza iiledi ezimhlophe / eziluhlaza okwesibhakabhaka / eziluhlaza, i-laser diodes, i-infrared detectors kunye nokunye.
Kuyafaneleka ukukhankanya ukuba ifilimu ye-GaN ekhule kwi-C-plane yesafire substrate ikhula ecaleni kwe-axis yayo ye-polar, oko kukuthi, isalathiso se-C-axis, engeyiyo kuphela inkqubo yokukhula okuvuthiweyo kunye nenkqubo ye-epitaxy, ixabiso eliphantsi kakhulu, elizinzileyo lomzimba. kunye neempawu zeekhemikhali, kodwa kunye nokusebenza okungcono kokusebenza. Iiathom zesapphire wafer ezijoliswe ku-C zibotshelelwe kulungiselelo lwe-O-al-al-o-al-O, ngelixa i-M-oriented kunye ne-A-oriented sapphire crystals ziboshwe kwi-al-O-al-O. Ngenxa yokuba i-Al-Al inamandla okudibanisa asezantsi kunye nokuqina okubuthathaka kune-Al-O, xa kuthelekiswa ne-M-oriented kunye ne-A-oriented ikristale yesafire, Ukuqhutyelwa kwe-C-sapphire ikakhulu kukuvula isitshixo se-Al-Al, ekulula ukuyiqhuba. , kwaye inokufumana umgangatho ophezulu womphezulu, kwaye emva koko ifumane umgangatho ongcono we-gallium nitride epitaxial, enokuphucula umgangatho wokukhanya okuphezulu okumhlophe / okuluhlaza kwe-LED. Ngakolunye uhlangothi, iifilimu ezikhulile kunye ne-C-axis zineziphumo ezizenzekelayo kunye ne-piezoelectric polarization, ezikhokelela kwintsimi yombane yangaphakathi eqinile ngaphakathi kweefilimu (i-active layer quantum Wells), enciphisa kakhulu ukusebenza okukhanyayo kweefilimu ze-GaN.
I-a-plane yesafire waferisicelo
Ngenxa yokusebenza kwayo okugqwesileyo okugqwesileyo, ngakumbi ukuhanjiswa okugqwesileyo, ikristale enye yesafire inokuphucula isiphumo sokungena kwe-infrared, kwaye ibe yinto efanelekileyo yefestile ye-infrared ephakathi, esetyenziswe ngokubanzi kwizixhobo zombane zomkhosi. Apho isafire yipolar plane (C plane) kwicala eliqhelekileyo lobuso, ngumphezulu ongewona wepolar. Ngokuqhelekileyo, umgangatho we-A-oriented sapphire crystal ungcono kune-C-oriented crystal, kunye ne-dislocation encinci, i-mosaic structure encinci kunye ne-crystal structure epheleleyo, ngoko inomsebenzi ongcono wokuhambisa ukukhanya. Kwangaxeshanye, ngenxa yemowudi ye-atomic ye-Al-O-Al-O kwi-atomic bonding kwi-plane, ukuqina kunye nokumelana nokunxiba kwe-A-oriented sapphire kuphezulu kakhulu kune-C-oriented sapphire. Ke ngoko, iichips ze-A-directional zisetyenziswa kakhulu njengezinto zefestile; Ukongeza, iSapphire ineepropathi ezifanayo ze-dielectric eziguquguqukayo kunye nomgangatho ophezulu wokugquma, ke unokufakwa kwitekhnoloji ye-hybrid microelectronics, kodwa kunye nokukhula kwabaqhubi ababalaseleyo, njengokusetyenziswa kweTlBaCaCuO (TbBaCaCuO), Tl-2212, ukukhula. ye-heterogeneous epitaxial superconducting films kwi-cerium oxide (CeO2) i-sapphire composite substrate. Nangona kunjalo, nangenxa yamandla amakhulu ebhondi ye-Al-O, kunzima ngakumbi ukusetyenzwa.
Ukusetyenziswa kweI-R /M yenqwelomoya yesafire
I-R-plane yindawo engeyiyo i-polar yesafire, ngoko ke utshintsho kwindawo ye-R-plane kwisixhobo sesafire inika iipropati ezahlukeneyo zomatshini, i-thermal, umbane kunye ne-optical. Ngokubanzi, i-R-surface sapphire substrate ikhethwa kwi-heteroepitaxial deposition ye-silicon, ngokukodwa kwi-semiconductor, i-microwave kunye ne-microelectronics ezidibeneyo zesekethe izicelo zesekethe, ekuvelisweni kwelothe, amanye amacandelo e-superconducting, i-resistors ephezulu, i-gallium arsenide ingasetyenziselwa i-R- uhlobo lokukhula kwe-substrate. Okwangoku, ngokuthandwa kweefowuni ezihlakaniphile kunye neenkqubo zekhompyutheni yethebhulethi, i-R-face sapphire substrate ithathe indawo yezixhobo ezikhoyo ze-SAW ezisetyenziselwa iifowuni ezihlakaniphile kunye neekhompyutheni zethebhulethi, ukubonelela nge-substrate yezixhobo ezinokuphucula ukusebenza.
Ukuba kukho ulwaphulo-mthetho, cima uqhagamshelwano
Ixesha lokuposa: Jul-16-2024