I-Sapphire yikristale enye ye-alumina, yeyokwinkqubo yekristale ye-tripartite, isakhiwo esinama-hexagonal, isakhiwo sayo sekristale sakhiwe zii-athomu ezintathu ze-oksijini kunye nee-athomu ezimbini ze-aluminium ngohlobo lwe-covalent bond, zilungelelaniswe ngokusondeleyo, zine-chain eqinileyo yokubopha kunye namandla e-lattice, ngelixa ingaphakathi layo lekristale liphantse lingabi nakungcola okanye iziphene, ngoko ke linobushushu obuhle kakhulu bombane, ukucaca, ukuqhuba kakuhle kobushushu kunye neempawu zokuqina okuphezulu. Isetyenziswa kakhulu njengefestile ye-optical kunye nezixhobo ze-substrate ezisebenza kakuhle. Nangona kunjalo, isakhiwo se-molecular se-sapphire siyinkimbinkimbi kwaye kukho i-anisotropy, kwaye impembelelo kwiimpawu zomzimba ezihambelanayo nayo yahlukile kakhulu ekucutshungulweni nasekusetyenzisweni kweendlela ezahlukeneyo zekristale, ngoko ke ukusetyenziswa kwayo kwahlukile. Ngokubanzi, ii-substrates ze-sapphire ziyafumaneka kwiindlela ze-C, R, A kunye ne-M.
Ukusetyenziswa kweI-wafer yesafire ye-C-plane
I-Gallium nitride (GaN) njenge-semiconductor yesizukulwana sesithathu ebanzi ye-bandgap, ine-band gap ebanzi ethe ngqo, i-atomic bond enamandla, i-thermal conductivity ephezulu, uzinzo oluhle lweekhemikhali (phantse lungangcoliswa yi-asidi) kunye nokukwazi okunamandla okulwa nokurhawuzelelwa, kwaye inamathuba abanzi ekusebenziseni ii-optoelectronics, izixhobo zobushushu obuphezulu kunye nezixhobo zamandla kunye nezixhobo ze-microwave ezisebenzisa i-frequency ephezulu. Nangona kunjalo, ngenxa yeqondo eliphezulu lokunyibilika kwe-GaN, kunzima ukufumana izinto ezinkulu zekristale enye, ngoko ke indlela eqhelekileyo kukwenza ukukhula kwe-heteroepitaxy kwezinye izinto ezisetyenziswa kwi-substrate, ezineemfuno eziphezulu zezinto ezisetyenziswa kwi-substrate.
Xa kuthelekiswa neisiseko sesafirekunye nezinye iikristale, izinga lokungafani kwe-lattice phakathi kwe-C-plane (<0001> orientation) i-sapphire wafer kunye neefilimu ezibekwe kumaqela Ⅲ-Ⅴ kunye Ⅱ-Ⅵ (njengeGaN) lincinci, kwaye izinga lokungafani kwe-lattice phakathi kwezi zimbini kunyeIifilimu ze-AlNenokusetyenziswa njengomaleko we-buffer incinci nangakumbi, kwaye iyahlangabezana neemfuno zokumelana nobushushu obuphezulu kwinkqubo ye-GaN crystallization. Ke ngoko, sisixhobo esiqhelekileyo sokukhulisa i-GaN, esinokusetyenziselwa ukwenza ii-LED ezimhlophe/eziluhlaza okwesibhakabhaka/eziluhlaza, ii-laser diodes, ii-infrared detectors njalo njalo.
Kuyafaneleka ukukhankanya ukuba ifilimu yeGaN ekhuliswe kwi-substrate yesafire ye-C-plane ikhula ecaleni kwe-axis yayo ye-polar, oko kukuthi, kwicala le-C-axis, engeyiyo nje kuphela inkqubo yokukhula okuvuthiweyo kunye nenkqubo ye-epitaxy, ixabiso eliphantsi, iipropati zomzimba ezizinzileyo kunye neekhemikhali, kodwa kunye nokusebenza okungcono kokucubungula. Iiathom ze-wafer yesafire ejoliswe kwi-C zibotshelelwe kwilungiselelo le-O-al-al-o-al-O, ngelixa iikristale zesafire ezijoliswe kwi-M kunye ne-A zibotshelelwe kwi-al-O-al-O. Ngenxa yokuba i-Al-Al inamandla okubophelela aphantsi kunye nokubophelela okubuthathaka kune-Al-O, xa kuthelekiswa neekristale zesafire ezijoliswe kwi-M kunye ne-A, ukucutshungulwa kwe-C-safire ngokuyintloko kukuvula isitshixo se-Al-Al, okulula ukusicubungula, kwaye sinokufumana umgangatho ophezulu womphezulu, size emva koko sifumane umgangatho ongcono we-gallium nitride epitaxial, onokuphucula umgangatho we-LED emhlophe/eluhlaza okwesibhakabhaka ekhanyayo kakhulu. Kwelinye icala, iifilimu ezikhuliswe ecaleni kwe-C-axis zineziphumo ze-polarization ezizenzekelayo kunye neze-piezoelectric, nto leyo ebangela intsimi yombane yangaphakathi enamandla ngaphakathi kweefilimu (i-active layer quantum Wells), nto leyo enciphisa kakhulu ukusebenza kakuhle kokukhanya kweefilimu ze-GaN.
I-wafer yesafire yeplaneisicelo
Ngenxa yokusebenza kwayo okugqwesileyo, ngakumbi ukuhanjiswa okugqwesileyo, ikristale enye yesafire inokuphucula isiphumo sokungena kwe-infrared, kwaye ibe yinto efanelekileyo yefestile ephakathi kwe-infrared, esetyenziswe kakhulu kwizixhobo zombane zomkhosi. Apho i-sapphire yiplane ye-polar (iplane ye-C) kwicala eliqhelekileyo lobuso, ngumphezulu ongengowe-polar. Ngokubanzi, umgangatho wekristale yesafire ejolise ku-A ungcono kunowekristale ejolise ku-C, ene-dislocation encinci, isakhiwo seMosaic esincinci kunye nesakhiwo sekristale esipheleleyo, ngoko ke inamandla okudlulisa ukukhanya okungcono. Kwangaxeshanye, ngenxa yemo ye-atomic bonding ye-Al-O-Al-O kwiplane a, ubunzima kunye nokumelana nokuguguleka kwesafire ejolise ku-A kuphezulu kakhulu kunokwesafire ejolise ku-C. Ke ngoko, iitships ze-A-directional zisetyenziswa kakhulu njengezixhobo zefestile; Ukongeza, i-A sapphire ikwanazo neempawu ezifanayo ze-dielectric constant kunye ne-insulation ephezulu, ngoko ke ingasetyenziswa kwitekhnoloji ye-hybrid microelectronics, kodwa ikwasetyenziswa nakwi-conductors ezintle kakhulu, njengokusetyenziswa kwe-TlBaCaCuO (TbBaCaCuO), i-Tl-2212, ukukhula kweefilimu ze-epitaxial superconducting ezahlukeneyo kwi-cerium oxide (CeO2) sapphire composite substrate. Nangona kunjalo, ngenxa yamandla amakhulu e-bond ye-Al-O, kunzima ngakumbi ukuyicubungula.
Ukusetyenziswa kweI-wafer yesafire ye-R/M yeplane
I-R-plane ngumphezulu ongengowe-polar wesafire, ngoko ke utshintsho kwindawo ye-R-plane kwisixhobo sesafire luyinika iipropati ezahlukeneyo zoomatshini, ubushushu, umbane, kunye nokukhanya. Ngokubanzi, i-R-surface safire substrate ikhethwa kakhulu kwi-heteroepitaxial deposition ye-silicon, ikakhulu kwizicelo zesekethe ezihlanganisiweyo ze-semiconductor, i-microwave kunye ne-microelectronics, ekuveliseni i-lead, ezinye izinto eziqhuba i-superconducting, ii-resistor ezixhathisayo, i-gallium arsenide ingasetyenziselwa ukukhula kwe-substrate yohlobo lwe-R. Okwangoku, ngokuthandwa kweefowuni ezihlakaniphileyo kunye neenkqubo zeekhompyutha zethebhulethi, i-R-face safire substrate ithathe indawo yezixhobo ze-SAW ezihlanganisiweyo ezisetyenziselwa iifowuni ezihlakaniphileyo kunye neekhompyutha zethebhulethi, ibonelela nge-substrate yezixhobo ezinokuphucula ukusebenza.
Ukuba kukho ukwaphulwa komthetho, qhagamshelana nathi ucime
Ixesha leposi: Julayi-16-2024