I-N-Type SiC kwi-Si Composite Substrates Dia6inch

等级Ibanga

U 级

P级

D级

Ibanga eliphantsi le-BPD

Ibanga leMveliso

Ibanga elingeyonyani

直径Ububanzi

150.0 mm±0.25mm

厚度Ubukhulu

500 μm±25μm

晶片方向Uqeqesho lweWafer

I-axis evaliweyo: 4.0°ukuya < 11-20 > ± 0.5°kwi-4H-N Kwi-axis: <0001>± 0.5°kwi-4H-SI

主定位边方向Iflethi Eyintloko

{10-10}±5.0°

主定位边长度Ubude obuPhambili obuSicaba

47.5 mm±2.5 mm

边缘Ukukhutshwa komda

3 mm

总厚度变化/弯曲度/翘曲度 TTV/Isaphetha /Warp

≤15μm /≤40μm /≤60μm

微管密度和基面位错I-MPD kunye ne-BPD

I-MPD≤1 cm-2

I-MPD≤5 cm-2

I-MPD≤15 cm-2

I-BPD≤1000cm-2

电阻率Ukuxhathisa

≥1E5 Ω·cm

表面粗糙度Uburhabaxa

I-Polish Ra≤1 nm

I-CMP Ra≤0.5 nm

裂纹(强光灯观测) #

Akukho nanye

Ubude obuqokelelweyo ≤10mm, ubude obunye ≤2mm

Imifantu ngenxa yokukhanya okuphezulu

六方空洞（强光灯观测）*

Indawo eqokelelweyo ≤1%

Indawo eqokelelweyo ≤5%

Iipleyiti zeHex ngokukhanya okuphezulu

多型(强光灯观测)*

Akukho nanye

Indawo eqokelelweyo ≤5%

Iindawo zePolytype ngokukhanya okuphezulu

划痕(强光灯观测)*&

Imikrwelo emi-3 ukuya kububanzi obuyi-1 × yesitya

Imikrwelo emi-5 ukuya kububanzi obuyi-1 × wefer

Imikrwelo ngenxa yokukhanya okuphezulu

ubude obuqokelelweyo

ubude obuqokelelweyo

崩边# Itshiphu yomphetho

Akukho nanye

5 zivumelekile, ≤1 mm nganye

表面污染物（强光灯观测）

Akukho nanye

Ungcoliseko lokukhanya okuphezulu