N-Udidi lweSiC kwiSi Composite Substrates Dia6inch

I-N-Type ye-SiC kwi-Si Composite Substrates ye-Dia6inch Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-N-Type SiC kwi-Si composite substrates zizinto ze-semiconductor ezibandakanya umaleko we-n-uhlobo lwe-silicon carbide (SiC) efakwe kwi-silicon (Si) substrate.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

等级IBanga	U 级	P级	D级
	IBanga leBPD eliphantsi	IBanga leMveliso	IBanga leDummy
直径Ububanzi	150.0 mm±0.25mm
厚度Ukutyeba	500μm±25μm
晶片方向Iwafer Orientation	I-off axis : 4.0 ° ukuya <11-20 > ±0.5 ° ye-4H-N Kwi-axis : <0001>±0.5 ° ye-4H-SI
主定位边方向IFlethi yaseprayimari	{10-10} ±5.0°
主定位边长度Ubude beFlethi obuPhambili	47.5 mm±2.5 mm
边缘Ukukhutshwa komda	3 mm
总厚度变化/弯曲度/翘曲度 TTV/Isaphetha /Warp	≤15μm /≤40μm /≤60μm
微管密度和基面位错MPD&BPD	MPD≤1 cm-2	MPD≤5 cm-2	MPD≤15 cm-2
	BPD≤1000cm-2
电阻率Ukuxhathisa	≥1E5 Ω·cm
表面粗糙度Uburhabaxa	IsiPolish Ra≤1 nm
	CMP Ra≤0.5 nm
裂纹(强光灯观测) #	Akukho nanye		Ubude obongezelekayo ≤10mm, ubude obunye≤2mm
Ukuqhekeka ngokukhanya okuphezulu
六方空洞（强光灯观测）*	Indawo eyongezelekayo ≤1%		Indawo eyongezelekayo ≤5%
Iipleyiti zeHex ngokukhanya okuphezulu
多型(强光灯观测)*	Akukho nanye		Indawo eyongezelekayo≤5%
Iindawo zePolytype ngokukhanya okuphezulu kokukhanya
划痕(强光灯观测)*&	Imikrwelo emi-3 ukuya kwi-1×i-wafer idayamitha		Imikrwelo emi-5 ukuya kwi-1×i-wafer idayamitha
Imikrwelo ngokukhanya okuphezulu	ubude obuqokelelweyo		ubude obuqokelelweyo
崩边# I-Edge chip	Akukho nanye		I-5 ivunyelwe, ≤1 mm nganye
表面污染物（强光灯观测）	Akukho nanye
Ungcoliseko ngokukhanya okuphezulu