Iisubstrates zeSiC Composite ze-N-Type Dia6inch I-monocrystalline esemgangathweni ophezulu kunye ne-substrate ekumgangatho ophantsi
Ii-substrates ze-N-Type SiC Composite Common parameter table
| 项目Izinto | ILogo Simahla Akukho mlinganiselo Ipapashwe ngu-指标Inkcazo | 项目Izinto | ILogo Simahla Akukho mlinganiselo Ipapashwe ngu-指标Inkcazo |
| 直径Ububanzi | 150±0.2mm | 正 面 ( 硅 面 ) 粗 糙 度 Uburhabaxa bangaphambili (ubuso obufanayo) | I-Ra≤0.2nm (5μm*5μm) |
| 晶型Uhlobo lwePolytype | 4H | I-Edge Chip, iScratch, iCrack (ukuhlolwa ngokubonakalayo) | Akukho nanye |
| 电阻率Ukuxhathisa | 0.015-0.025ohm ·cm | 总厚度变化I-TTV | ≤3μm |
| Ubukhulu bomaleko wokudlulisa | ≥0.4μm | 翘曲度I-Warp | ≤35μm |
| 空洞Akukho nto | ≤5ea/iqhekeza (2mm>D>0.5mm) | 总厚度Ubukhulu | 350±25μm |
Igama elithi "uhlobo lwe-N" libhekisa kuhlobo lwe-doping olusetyenziswa kwizixhobo ze-SiC. Kwifiziksi ye-semiconductor, i-doping ibandakanya ukungeniswa ngabom kokungcola kwi-semiconductor ukutshintsha iipropati zayo zombane. I-doping yohlobo lwe-N ingenisa izinto ezibonelela ngee-electron ezininzi zasimahla, nto leyo enika loo nto ingxinano yokuthwala itshaja engalunganga.
Iingenelo ze-substrates ze-N-type SiC ezidityanisiweyo ziquka:
1. Ukusebenza kobushushu obuphezulu: I-SiC inomoya ophezulu wokushisa kwaye ingasebenza kubushushu obuphezulu, nto leyo eyenza ukuba ifaneleke kwizicelo ze-elektroniki ezinamandla aphezulu kunye ne-frequency ephezulu.
2. I-voltage ephezulu yokuqhekeka: Izinto ze-SiC zinombane ophezulu wokuqhekeka, nto leyo evumela ukuba zikwazi ukumelana nombane ophezulu ngaphandle kokuqhekeka kombane.
3. Ukumelana neekhemikhali kunye nokusingqongileyo: I-SiC ayimelani neekhemikhali kwaye inokumelana neemeko ezinzima zokusingqongileyo, nto leyo eyenza ukuba ifaneleke ukusetyenziswa kwiindawo ezinzima.
4. Ukulahleka kwamandla okunciphileyo: Xa kuthelekiswa nezinto zemveli ezisekelwe kwi-silicon, ii-substrates ze-SiC zivumela ukuguqulwa kwamandla okusebenzayo ngakumbi kwaye zinciphise ukulahleka kwamandla kwizixhobo ze-elektroniki.
5. I-Wide bandgap: I-SiC ine-wide bandgap, evumela uphuhliso lwezixhobo ze-elektroniki ezinokusebenza kumaqondo obushushu aphezulu kunye noxinano lwamandla aphezulu.
Lilonke, ii-substrates ze-N-type SiC ezidityanisiweyo zibonelela ngeenzuzo ezibalulekileyo ekuphuhlisweni kwezixhobo ze-elektroniki ezisebenza kakuhle, ingakumbi kwizicelo apho ukusebenza kobushushu obuphezulu, uxinano lwamandla aphezulu, kunye nokuguqulwa kwamandla okusebenzayo kubalulekile.