I-N-Type SiC Composite Substrates Dia6inch Umgangatho ophezulu we-monocrystaline kunye ne-substrate ephantsi yomgangatho

Igama elithi "N-uhlobo" libhekisela kuhlobo lwe-doping olusetyenziswa kwizinto ze-SiC. Kwi-physics ye-semiconductor, i-doping ibandakanya ukungeniswa ngabom kokungcola kwi-semiconductor ukuguqula iimpawu zayo zombane. I-N-uhlobo lwe-doping yazisa izinto ezibonelela ngokugqithiswa kwee-electron zamahhala, zinika izinto eziphathekayo ugxininiso lwe-carrier carrier.

Uncedo lwe-N-uhlobo lwe-SiC composite substrates ziquka:

1. Ukusebenza kobushushu obuphezulu: I-SiC ine-conductivity ephezulu ye-thermal kwaye inokusebenza kumaqondo okushisa aphezulu, okwenza ukuba ifaneleke kwi-high-power and high-frequency electronic applications.

2. Amandla ombane aphezulu wokuqhekeka: Izixhobo ze-SiC zinevoltheji ephezulu yokuqhawuka, ezenza zikwazi ukumelana namabala ombane aphezulu ngaphandle kokuqhawuka kombane.

3. Ukumelana nemichiza kunye nokusingqongileyo: I-SiC ixhatshazwa yikhemikhali kwaye inokumelana neemeko ezinzima zokusingqongileyo, iyenze ilungele ukusetyenziswa kwizicelo ezinzima.

4. Ukunciphisa ukulahlekelwa kwamandla: Xa kuthelekiswa nezinto eziqhelekileyo ezisekelwe kwi-silicon, i-substrates ye-SiC yenza ukuguqulwa kwamandla okusebenzayo kunye nokunciphisa ukulahlekelwa kwamandla kwizixhobo zombane.

5. I-Bandgap ebanzi: I-SiC ine-bandgap ebanzi, evumela ukuphuhliswa kwezixhobo zombane ezinokuthi zisebenze kumaqondo aphezulu kunye noxinzelelo lwamandla aphezulu.

Ngokubanzi, ii-substrates ezihlanganisiweyo zohlobo lwe-N-SiC zibonelela ngenzuzo ebalulekileyo kuphuhliso lwezixhobo zombane ezisebenza ngokuphezulu, ngakumbi kwizicelo apho ukusebenza kobushushu obuphezulu, ubuninzi bamandla amakhulu, kunye noguqulo lwamandla olusebenzayo lubalulekile.