Izixhobo zobuchwepheshe be-laser zeMicrojet ezisikiweyo ukusika i-SiC ukucutshungulwa kwezinto

Izixhobo zobuchwepheshe be-laser zeMicrojet ezisikiweyo ukusika i-wafer ukucutshungulwa kwezinto zeSiC Umfanekiso obonisiweyo

Inkcazo emfutshane:

Izixhobo zobuchwepheshe be-laser ze-Microjet luhlobo lwenkqubo yokuchonga ngokuchanekileyo edibanisa i-laser enamandla aphezulu kunye ne-micron-level liquid jet. Ngokudibanisa umqadi we-laser kwi-high-speed liquid jet (amanzi anyibilikisiweyo okanye ulwelo olukhethekileyo), ukucutshungulwa kwezinto ngokuchanekileyo okuphezulu kunye nomonakalo ophantsi wobushushu kunokufezekiswa. Le teknoloji ifanelekile ngokukodwa ekusikeni, ekubholeni nasekucutshungulweni kwe-microstructure yezinto eziqinileyo nezibuthathaka (ezifana ne-SiC, i-sapphire, iglasi), kwaye isetyenziswa kakhulu kwi-semiconductor, kwi-photoelectric display, kwizixhobo zonyango nakwezinye iindawo.

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo wokusebenza:

1. Ukudibanisa ngeLaser: Ilaser eshukumayo (UV/green/infrared) ijoliswe ngaphakathi kwijethi yolwelo ukuze yenze itshaneli yokudlulisela amandla ezinzileyo.

2. Isikhokelo solwelo: ijethi ekhawulezayo (isantya sokuhamba kwamanzi yi-50-200m/s) ipholisa indawo yokucubungula kwaye isusa ubumdaka ukuze kuthintelwe ukuqokelelana kobushushu kunye nongcoliseko.

3. Ukususwa kwezinto: Amandla e-laser abangela isiphumo se-cavitation kulwelo ukuze kufezekiswe ukucutshungulwa okubandayo kwezinto (indawo echaphazelekileyo bubushushu <1μm).

4. Ulawulo olutshintshayo: uhlengahlengiso lwexesha langempela lweeparamitha zelaser (amandla, imvamisa) kunye noxinzelelo lwejethi ukuhlangabezana neemfuno zezixhobo ezahlukeneyo kunye nezakhiwo.

Iiparameter eziphambili:

1. Amandla eLaser: 10-500W (iyalungiseka)

2. Ububanzi beJet: 50-300μm

3. Ukuchaneka koomatshini: ± 0.5μm (ukusika), umlinganiselo wobunzulu nobubanzi yi-10:1 (ukugrumba)

Iingenelo zobugcisa:

(1) Phantse akukho monakalo kubushushu
- Ukupholisa ijethi yolwelo kulawula indawo echaphazelekileyo kubushushu (HAZ) ukuya kwi **<1μm**, kuthintelwe ukuqhekeka okubangelwa kukucubungula nge-laser eqhelekileyo (i-HAZ idla ngokuba yi >10μm).

(2) Umatshini wokulungisa ngokuchanekileyo ophezulu kakhulu
- Ukuchaneka kokusika/ukugrumba ukuya kuthi ga kwi-**±0.5μm**, uburhabaxa bomphetho i-Ra<0.2μm, kunciphisa isidingo sokupholisha okulandelayo.

- Xhasa ukucutshungulwa kwesakhiwo se-3D esintsonkothileyo (njengemingxunya ekhonkrithi, iindawo ezimile okweemilo).

(3) Ukuhambelana kwezinto ezibanzi
- Izinto eziqinileyo neziqhekekayo: iSiC, isafire, iglasi, iiseramikhi (iindlela zemveli kulula ukuziqhekeza).

- Izinto ezibuthathaka kubushushu: iipolymers, izicubu zebhayoloji (akukho mngcipheko wokutshintsha kobushushu).

(4) Ukhuseleko lwendalo esingqongileyo kunye nokusebenza kakuhle
- Akukho ungcoliseko lothuli, ulwelo lunokuphinda lusetyenziswe kwaye luhluzwe.

- Ukonyuka kwesantya sokucubungula ngama-30%-50% (xa kuthelekiswa noomatshini bokulungisa).

(5) Ulawulo olukrelekrele
- Indawo ebonakalayo edibeneyo kunye nokulungiswa kweeparameter ze-AI, ubukhulu bezinto eziguquguqukayo kunye neziphene.

Iinkcukacha zobugcisa:

Umthamo wekhawuntara	300300150	400400200
I-axis yomgca XY	Imoto ethe tye. Imoto ethe tye	Imoto ethe tye. Imoto ethe tye
I-axis yomgca u-Z	150	200
Ukuchaneka kokubeka indawo μm	+/-5	+/-5
Ukuchaneka kokubeka okuphindaphindiweyo μm	+/-2	+/-2
Ukukhawulezisa G	1	0.29
Ulawulo lwamanani	I-axis ezi-3 / i-axis ezi-3 + 1 / i-axis ezi-3 + 2	I-axis ezi-3 / i-axis ezi-3 + 1 / i-axis ezi-3 + 2
Uhlobo lolawulo lwamanani	I-DPSS Nd:YAG	I-DPSS Nd:YAG
Ubude bamaza nm	532/1064	532/1064
Amandla alinganisiweyo W	50/100/200	50/100/200
Ijethi yamanzi	40-100	40-100
Ibha yoxinzelelo lwe-nozzle	50-100	50-600
Ubukhulu (isixhobo somatshini) (ububanzi * ubude * ukuphakama) mm	144519442260	170015002120
Ubungakanani (ikhabhinethi yokulawula) (Ububanzi * Ububanzi * Ububanzi)	70025001600	70025001600
Ubunzima (izixhobo) T	2.5	3
Ubunzima (ikhabhinethi yokulawula) KG	800	800
Ubuchule bokucubungula	Uburhabaxa bomphezulu iRa≤1.6um Isantya sokuvula ≥1.25mm/s Ukusika okujikelezileyo ≥6mm/s Isantya sokusika esithe ngqo ≥50mm/s	Uburhabaxa bomphezulu iRa≤1.2um Isantya sokuvula ≥1.25mm/s Ukusika okujikelezileyo ≥6mm/s Isantya sokusika esithe ngqo ≥50mm/s
	Kwikristale ye-gallium nitride, izixhobo ze-semiconductor ze-ultra-wide band gap (idayimani/iGallium oxide), izixhobo ezikhethekileyo ze-aerospace, i-LTCC carbon ceramic substrate, i-photovoltaic, ikristale ye-scintillator kunye nezinye izinto ezisetyenziswayo. Qaphela: Umthamo wokucubungula uyahluka ngokuxhomekeke kwiimpawu zezinto

Ityala lokucubungula:

Iinkonzo ze-XKH:

I-XKH ibonelela ngoluhlu olupheleleyo lwenkxaso epheleleyo yenkonzo yomjikelo wobomi kwizixhobo zobuchwepheshe be-laser ye-microjet, ukusuka kuphuhliso lwenkqubo yokuqala kunye nokubonisana ngokukhetha izixhobo, ukuya kudibaniso lwenkqubo eyenzelwe wena phakathi kwexesha (kubandakanya ukufanisa okukhethekileyo komthombo we-laser, inkqubo yejethi kunye nemodyuli yokuzenzekelayo), ukuya kuqeqesho lokusebenza nokugcinwa kamva kunye nokuphuculwa kwenkqubo okuqhubekayo, yonke inkqubo ixhotyiswe ngenkxaso yeqela lobuchwephesha lobuchwephesha; Ngokusekelwe kwiminyaka engama-20 yamava okulungisa ngokuchanekileyo, singabonelela ngezisombululo ezisisigxina kubandakanya ukuqinisekiswa kwezixhobo, ukuqaliswa kwemveliso enkulu kunye nokuphendula ngokukhawuleza emva kokuthengisa (iiyure ezingama-24 zenkxaso yobugcisa kunye neendawo eziphambili ezigciniweyo) kumashishini ahlukeneyo afana ne-semiconductor kunye nezonyango, kwaye sithembisa iwaranti yeenyanga ezili-12 kunye nenkonzo yokugcinwa nokuphucula ubomi bonke. Qinisekisa ukuba izixhobo zabathengi zihlala zigcina ukusebenza kokucubungula okuphambili kushishino kunye nozinzo.