Isixhobo se-laser ye-Microjet se-wafer yokusika ukusetyenzwa kwezinto ze-SiC

Microjet laser technology isixhobo wafer ukusika SiC material processing Featured Image

Inkcazelo emfutshane:

Isixhobo sobuchwepheshe belaser yeMicrojet luhlobo lwenkqubo yomatshini echanekileyo edibanisa i-laser yamandla aphezulu kunye nejethi yolwelo yenqanaba lemicron. Ngokudibanisa i-laser beam kwi-jet ye-liquid ye-high-speed (amanzi e-deionized okanye i-liquid ekhethekileyo), ukulungiswa kwezinto eziphathekayo ngokuchanekileyo okuphezulu kunye nomonakalo ophantsi we-thermal unokufezekiswa. Ubuchwephesha bufaneleke ngokukodwa ukusika, ukugaya kunye nokulungiswa kwe-microstructure yezinto ezinzima kunye ne-brittle (ezifana ne-SiC, isafire, iglasi), kwaye isetyenziswa ngokubanzi kwi-semiconductor, i-photoelectric display, izixhobo zonyango kunye nezinye iinkalo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgaqo wokuSebenza:

1. I-Laser coupling: i-pulsed laser (i-UV / eluhlaza / infrared) igxininise ngaphakathi kwijethi yolwelo ukwenza umjelo ozinzileyo wokuhambisa amandla.

2. Isikhokelo solwelo: ijethi enesantya esiphezulu (isantya sokuhamba kwe-50-200m/s) ukupholisa indawo yokulungisa nokususa inkunkuma ukuze kuthintelwe ukuqokelelwa kobushushu kunye nongcoliseko.

3. Ukususwa kwezinto eziphathekayo: I-laser energy ibangela i-cavitation effect kwi-liquid ukufezekisa ukuqhutyelwa kwezinto ezibandayo (ubushushu obuchaphazelekayo kwindawo <1μm).

4. Ulawulo lweDynamic: ukulungiswa kwexesha langempela kweeparamitha ze-laser (amandla, i-frequency) kunye noxinzelelo lwe-jet ukuhlangabezana neemfuno zezinto ezahlukeneyo kunye nezakhiwo.

Iiparamitha eziphambili:

1. Amandla eLaser: 10-500W (enokulungiswa)

2. Ububanzi beJet: 50-300μm

3.Ukuchaneka koMatshini: ±0.5μm (ukusika), ubunzulu kumlinganiselo wobubanzi 10:1 (ukugaya)

Iinzuzo zobugcisa:

(1) Phantse umonakalo wobushushu
- Ukupholisa ijethi yolwelo kulawula indawo echaphazelekayo ubushushu (HAZ) ukuya **<1μm**, ukuphepha iintanda ezincinci ezibangelwa kukulungiswa kwelaser eqhelekileyo (i-HAZ idla ngokuba > 10μm).

(2) Ukuchaneka okuphezulu okuphezulu
- Ukusika / ukuchaneka ukugrumba ukuya kuthi ga ku ** ± 0.5μm **, uburhabaxa bomda Ra<0.2μm, ukunciphisa imfuno yokupolisha okulandelayo.

- Inkxaso yokusetyenzwa kwesakhiwo se-3D esintsonkothileyo (njengemingxuma ekhonkoni, iindawo zokubeka ezimile).

(3) Ukuhambelana kwezinto ezibanzi
- Izinto ezilukhuni kunye ne-brittle: i-SiC, isafire, iglasi, i-ceramics (iindlela zemveli zilula ukuziqhekeza).

- Izinto ezibuthathaka zobushushu: iipolymers, izicubu zebhayoloji (akukho mngcipheko we-thermal denaturation).

(4) Ukukhuselwa kwendalo kunye nokusebenza kakuhle
- Akukho lungcoliseko lothuli, ulwelo lunokuphinda lusetyenziswe kwaye luhluzwe.

- 30% -50% ukwanda isantya processing (vs. machining).

(5) Ulawulo olukrelekrele
-Ukuma okubonakalayo okudityanisiweyo kunye nokulungiswa kweparamitha ye-AI, ubukhulu bezinto eziphathekayo kunye neziphene.

Iinkcukacha zobugcisa:

Umthamo we-countertop	300300150	400400200
Umgca ohamba ngomgca XY	Injini yomgca. Injini yomgca	Injini yomgca. Injini yomgca
Umgca ohamba ngomgca uZ	150	200
Ukubeka ukuchaneka μm	+/-5	+/-5
Ukuchaneka kokubekwa okuphindaphindiweyo μm	+/-2	+/-2
Ukukhawuleza G	1	0.29
Ulawulo lwamanani	3 iasi /3+1 iasi /3+2 iasi	3 iasi /3+1 iasi /3+2 iasi
Uhlobo lolawulo lwamanani	DPSS Nd:YAG	DPSS Nd:YAG
Ubude bobude nm	532/1064	532/1064
Amandla alinganisiweyo W	50/100/200	50/100/200
Ijethi yamanzi	40-100	40-100
Ibha yoxinzelelo lweNozzle	50-100	50-600
Imilinganiselo (isixhobo somatshini) (ububanzi * ubude * ubude) mm	144519442260	170015002120
Ubungakanani (ikhabhathi yolawulo) (W * L * H)	70025001600	70025001600
Ubunzima (izixhobo) T	2.5	3
Ubunzima (ikhabhinethi yolawulo) KG	800	800
Isakhono sokuqhubekekisa	Uburhabaxa bomphezulu Ra≤1.6um Isantya sokuvula ≥1.25mm/s Ukusikwa kwesangqa ≥6mm/s Isantya sokusika umgca ≥50mm / s	Uburhabaxa bomphezulu Ra≤1.2um Isantya sokuvula ≥1.25mm/s Ukusikwa kwesangqa ≥6mm/s Isantya sokusika umgca ≥50mm / s
	Kwikristale ye-gallium nitride, i-ultra-wide band gap semiconductor materials (i-diamond / i-Gallium oxide), izinto ezikhethekileyo ze-aerospace, i-LTCC carbon ceramic substrate, i-photovoltaic, i-scintillator crystal kunye nezinye izinto zokusebenza. Qaphela: Umthamo wokucubungula uyahluka ngokuxhomekeke kwiimpawu eziphathekayo

Imeko yokuqhuba:

Iinkonzo ze-XKH:

I-XKH ibonelela ngoluhlu olupheleleyo lwenkxaso yenkonzo yomjikelo wobomi obupheleleyo kwizixhobo zobuchwepheshe be-laser microjet, ukususela ekuqaleni kophuhliso lwenkqubo kunye nokukhethwa kwezixhobo zokubonisana, ukuya kwi-mid-term customized system integration (kubandakanywa ukudibanisa okukhethekileyo komthombo we-laser, inkqubo yejethi kunye nemodyuli ye-automation), ukuya kuqeqesho lwamva kunye nokugcinwa koqeqesho kunye nokulungiswa kwenkqubo eqhubekayo, yonke inkqubo ixhotyiswe ngenkxaso yeqela lezobugcisa; Ngokusekelwe kwiminyaka eyi-20 yamava omatshini wokuchaneka, sinokubonelela ngezisombululo zokumisa okukodwa kubandakanya ukuqinisekiswa kwezixhobo, ukuqaliswa kwemveliso yobuninzi kunye nokuphendula ngokukhawuleza emva kokuthengisa (iiyure ezingama-24 zenkxaso yobugcisa + ukugcinwa kweendawo eziphambili ze-spare) kumashishini ahlukeneyo afana ne-semiconductor kunye nezonyango, kwaye sithembisa iinyanga ezili-12 iwaranti ende kunye nokugcinwa kobomi bonke kunye nenkonzo yokuphucula. Qinisekisa ukuba izixhobo zabathengi zihlala zigcina intsebenzo ekhokelayo kwishishini kunye nokuzinza.