Iingots zeLiTaO3 Lithium Tantalate ezineFe/Mg Doping ezenzelwe wena ze-4inch 6inch 8inch ukuze ziqwalaselwe kwiMizi-mveliso

Inkcazo emfutshane:

Ii-Ingots zeLiTaO3 (ii-Ingots zeLithium Tantalate), njengezixhobo eziphambili zesizukulwana sesithathu se-semiconductors ezibanzi kunye ne-optoelectronics, zisebenzisa ubushushu bazo obuphezulu beCurie (607)°C), uluhlu olubanzi lokucaca (400–5,200 nm), i-coefficient ebalaseleyo ye-electromechanical coupling (Kt² >15%), kunye nokulahleka okuphantsi kwe-dielectric (tanδ <2%) ukuguqula unxibelelwano lwe-5G, i-quantum computing, kunye nokuhlanganiswa kwe-photonic. Ngokusebenzisa ubuchwepheshe obuphambili bokwenziwa obufana nokuthuthwa komphunga ngokwasemzimbeni (PVT) kunye ne-chemical vapor deposition (CVD), sinikezela ngee-ingots ze-X/Y/Z-cut, 42°Y-cut, kunye ne-periodic poled (PPLT) kwiinkcukacha ze-3–8-intshi, eziquka i-micropipe density <0.1 cm⁻² kunye ne-dislocation density <500 cm⁻². Iinkonzo zethu ziquka i-Fe/Mg doping, ii-proton exchange waveguides, kunye ne-silicon-based heterogeneous integration (POI), ejongana nezihluzi ze-optical ezisebenzayo eziphezulu, imithombo yokukhanya kwe-quantum, kunye ne-infrared detectors. Ezi zinto ziqhuba impumelelo kwi-miniaturization, ukusebenza kwe-high-frequency, kunye nokuzinza kobushushu, zikhawulezisa ukutshintshwa kwekhaya kunye nokuqhubela phambili kwetekhnoloji.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Inkcazo	Yesiqhelo	Ubuchule obuphezulu
Izixhobo	Iiwafer zeLiTaO3(LT)/ LiNbO3	Iiwafer zeLiTaO3(LT)/LiNbO3
Ukuqhelaniswa	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
I-parallel	30″	10''
I-Strependicular	10′	5'
Umgangatho womphezulu	40/20	20/10
Ukuphambuka Kwamaza	λ/4@632nm	λ/8@632nm
Ubungangamsha bomphezulu	λ/4@632nm	λ/8@632nm
Imbobo ecacileyo	>90%	>90%
I-Chamfer	<0.2×45°	<0.2×45°
Ubukhulu/Ubukhulu bokunyamezela	± 0.1 mm	± 0.1 mm
Ubukhulu obukhulu	dia150×50mm	dia150×50mm

Iinkonzo ze-XKH

1. Ukwenziwa kwee-Ingot ezinkulu.

Ubungakanani kunye nokuSika: ii-ingots ezi-3–8-intshi ezine-X/Y/Z-cut, i-42°Y-cut, kunye ne-angular cuts ezenziwe ngokwezifiso (±0.01° tolerance).

Ulawulo lokuDopa: UDopation lweFe/Mg ngokusebenzisa indlela yeCzochralski (uluhlu loxinaniso 10¹⁶–10¹⁹ cm⁻³) ukuze kuphuculwe ukumelana nokuthamba kwe-photorefractive kunye nozinzo lobushushu.

2. Iiteknoloji zeNkqubo eziPhambili.

Ukuhlanganiswa Okungafaniyo: Ii-wafers ze-LiTaO3 ezisekwe kwiSilicon (POI) ezinolawulo lobukhulu (300–600 nm) kunye nokuqhuba kobushushu ukuya kuthi ga kwi-8.78 W/m·K kwiifilitha ze-SAW ezisebenzisa i-frequency ephezulu.

Ukwenziwa kwe-Waveguide: Iindlela zokutshintshana kweProton (PE) kunye ne-reverse proton exchange (RPE), ezifezekisa ii-submicron waveguides (Δn >0.7) kwii-modulators ze-electro-optic ezikhawulezayo (i-bandwidth >40 GHz).

3. Iinkqubo zoLawulo loMgangatho

Uvavanyo oluvela ekupheleni: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), i-AFM (i-surface morphology), kunye novavanyo lwe-optical uniformity (Δn <5×10⁻⁵).

4. Inkxaso yeCandelo loNikezelo lweHlabathi

Umthamo weMveliso: Imveliso yenyanga engaphezulu kwama-5,000 ee-ingots (8-intshi: 70%), exhasa ukuhanjiswa kweenkonzo ezingxamisekileyo iiyure ezingama-48.

Inethiwekhi yezoThutho: Ugutyungelwa eYurophu, eMntla Melika, naseAsia-Pacific ngothutho lomoya/lolwandle olunepakethe elawulwa bubushushu.

5. Uphuhliso loBugcisa kunye

IiLabhoratri zoR&D eziHlangeneyo: Sebenzisana kumaqonga okudibanisa i-photonic (umz., i-SiO2 low-loss layer bonding).

Isishwankathelo

Ii-Ingots zeLiTaO3 zisebenza njengezixhobo zobuchule eziguqula i-optoelectronics kunye netekhnoloji ye-quantum. Ngokusebenzisa izinto ezintsha ekukhuleni kwekristale (umz., i-PVT), ukunciphisa iziphene, kunye nokudibanisa okwahlukeneyo (umz., i-POI), sinikezela ngezisombululo ezinokuthembeka okuphezulu nezingabizi kakhulu zonxibelelwano lwe-5G/6G, i-quantum computing, kunye ne-IoT yemizi-mveliso. Ukuzibophelela kwe-XKH ekuphuculeni ukunciphisa iziphene ze-ingot kunye nokwandisa imveliso ye-8-intshi kuqinisekisa ukuba abathengi bakhokela kwiikhonkco zobonelelo zehlabathi, beqhuba ixesha elilandelayo le-wide-bandgap semiconductor ecosystems.