ILiTaO3 Lithium Tantalate Ingots eneFe/Mg Doping elungiselelwe wena 4inch 6inch 8inch yeIindustrial Sensing

ILiTaO3 Lithium Tantalate Ingots eneFe/Mg Doping eyenzelwe wena 4inch 6inch 8inch yeIindustrial Sensing Image Featured

Inkcazelo emfutshane:

I-LiTaO3 Ingots (i-Lithium Tantalate Ingots), njengezixhobo eziphambili kwisizukulwana sesithathu semiconductors ebanzi-bandgap kunye ne-optoelectronics, ziphakamisa ubushushu bazo obuphezulu beCurie (607°C), uluhlu olubanzi lwe-transparency (400-5,200 nm), i-electromechanical coefficient egqwesileyo yokudibanisa (Kt² >15%), kunye nelahleko ephantsi ye-dielectric (tanδ <2%) ukuguqula unxibelelwano lwe-5G, i-quantum computing, kunye ne-photonic integration. Ngokusebenzisa ubugcisa bobugcisa obuphezulu obufana nokuthuthwa komphunga womzimba (PVT) kunye nokubekwa komphunga kwikhemikhali (CVD), sibonelela nge-X/Y/Z-cut, 42°Y-cut, kunye ne-periodically poled (PPLT) kwiingots kwiinkcukacha ze-intshi ezi-3–8, ezibonisa ukuxinana kwe-micropipe <0.1 cm⁻² kunye nokususwa kwendawo. Iinkonzo zethu ziquka i-Fe/Mg doping, i-proton exchange waveguides, kunye ne-silicon-based heterogeneous integration (POI), ukujongana nezihluzi ezisebenza kakuhle kakhulu, imithombo yokukhanya ye-quantum, kunye ne-infrared detectors. Esi sixhobo siqhuba impumelelo kwi-miniaturization, ukusebenza kwe-high-frequency, kunye nokuzinza kwe-thermal, ukukhawulezisa ukutshintshwa kwekhaya kunye nokuqhubela phambili kwezobuchwepheshe.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparamitha zobugcisa

Inkcazo	Ngokwesiqhelo	Ukuchaneka okuphezulu
Izinto eziphathekayo	I-LiTaO3(LT)/ ii-wafers ze-LiNbO3	LiTaO3(LT)/LiNbO3 wafers
Ukuqhelaniswa	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Ngokunxuseneyo	30″	10''
Perpendicular	10′	5'
umphezulu Umgangatho	40/20	20/10
Ukuphazamiseka kweWavefront	λ/4@632nm	λ/8@632nm
Umphezulu oMcaba	λ/4@632nm	λ/8@632nm
Umngxuma ocacileyo	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Ukutyeba/Ukunyamezelwa koMda	±0.1 mm	±0.1 mm
Ubukhulu bemilinganiselo	idia150×50mm	idia150×50mm

Iinkonzo ze-XKH

1. Ukwenziwa kweIngot Enkulu.

Ubungakanani kunye nokusika: i-3-8-intshi ye-ingots ene-X / Y / Z-cut, i-42 ° Y-cut, kunye ne-angular cuts yesiko (± 0.01 ° ukunyamezela).

Ulawulo lwe-Doping: I-Fe/Mg co-doping ngendlela ye-Czochralski (uluhlu loxinaniso 10¹⁶–10¹⁹ cm⁻³) ukuze kunyuswe ukumelana ne-photorefractive kunye nokuzinza kwe-thermal.

2. Ubuchwephesha beNkqubo yoBuchule.

Ukudityaniswa kwe-Heterogeneous: I-Silicon-based based LiTaO3 wafers composite (POI) kunye nokulawula ubukhulu (300-600 nm) kunye ne-thermal conductivity ukuya kwi-8.78 W / m·K kwiifilitha eziphezulu ze-SAW.

I-Waveguide Fabrication: I-Proton exchange (PE) kunye ne-reverse proton exchange exchange (RPE) ubuchule, ukufezekisa i-submicron waveguides (Δn> 0.7) ye-high-speed electro-optic modulators (bandwidth> 40 GHz).

3. IiNkqubo zoLawulo loMgangatho

Ukuvavanywa kokuphela kokuphela: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), i-AFM (i-surface morphology), kunye novavanyo lwe-optical uniformity (Δn <5 × 10⁻⁵).

4. INkxaso yoBonelelo lweHlabathi

Umthamo weMveliso: Imveliso yenyanga> ii-ingots ze-5,000 (i-8-intshi: i-70%), ixhasa ukuhanjiswa kweeyure ze-48 ezingxamisekileyo.

Uthungelwano loLungiselelo: Ukuhanjiswa kweYurophu, kuMntla Melika, kunye ne-Asia-Pacific ngempahla yomoya/yolwandle ngokupakishwa okulawulwa ngamaqondo obushushu.

5. UPhuhliso loBugcisa kunye noPhuhliso

IiLebhu eziManyeneyo ze-R&D: Ukusebenzisana kumaqonga okudibanisa ifotoni (umzekelo, iSiO2 ilahleko ephantsi yomaleko wokudibanisa).

Isishwankathelo

Ii-Ingots ze-LiTaO3 zisebenza njengezinto ezicwangcisiweyo zokulungisa ii-optoelectronics kunye ne-quantum technologies. Ngokusebenzisa izinto ezintsha ekukhuleni kwekristale (umzekelo, i-PVT), ukunciphisa isiphene, kunye nokudibanisa okungafaniyo (umzekelo, i-POI), sihambisa ukuthembeka okuphezulu, izisombululo ezingabizi kakhulu zonxibelelwano lwe-5G / 6G, i-computing ye-quantum, kunye ne-IoT yezoshishino. Ukuzinikela kwe-XKH ekuqhubeleni phambili ukunciphisa isiphene se-ingot kunye nokulinganisa imveliso ye-8-intshi iqinisekisa ukuba abathengi bakhokela kwiityathanga zokubonelela ngehlabathi, ukuqhuba ixesha elilandelayo le-wide-bandgap semiconductor ecosystems.