LiTaO₃ Ingots 50mm – 150mm Idiameter X/Y/Z-Cut Orientation ±0.5° Ukunyamezela

LiTaO₃ Ingots 50mm – 150mm Idiameter X/Y/Z-Cut Orientation ±0.5° Ukunyamezeleka koMfanekiso Obonisiweyo

Inkcazelo emfutshane:

I-LiTaO₃ (i-Lithium Tantalate) i-ingots imele ukusebenza okuphezulu kwe-piezoelectric kunye ne-ferroelectric izixhobo ezidume ngeempawu zazo ezikhethekileyo ze-piezoelectric, ukuzinza kwe-thermal, kunye neempawu ezibonakalayo, ezibenza zibe yimfuneko kwiifilitha ze-surface acoustic wave (SAW), i-bulk acoustic wave (BAW) resonators, i-indulators, kunye ne-indulators. I-XKH igxile kwi-R&D kunye nokuveliswa kwe-premium-quality LiTaO₃ ingots, kusetyenziswa ukukhula kwekristale yeCzochralski (CZ) kunye ne-stoichiometric optimization technologies ukuqinisekisa i-homogeneity ye-crystalline ephezulu kunye noxinzelelo lweziphene <500 cm⁻².

I-XKH inikezela nge-50-150mm ububanzi be-LiTaO₃ ingots ene-multiple crystallographic orientations (i-X-cut, i-Y-cut, i-Z-cut), ixhasa i-doping eyenziwe ngokwezifiso (Mg, Zn) kunye nonyango lwe-poling ukuhlangabezana neemfuno ezahlukeneyo zesicelo. I-coezoelectric coefficient yemathiriyeli (d₃₃~8 pC/N), i-electromechanical coefficient coefficient (K²~0.5%), kunye nobushushu beCurie (~600°C) imisela i-LiTaO₃ njengolona khetho lufanelekileyo kwizihluzi ze-high-frequency kunye nezinzwa zobushushu obuphezulu.

Imveliso edityanisiweyo igubungela ukucocwa kwezinto ezikrwada, ukukhula kwekristale, kunye nokusetyenzwa ngokuchanekileyo, kukhonza unxibelelwano lwe-5G, i-elektroniki yabathengi, iinkqubo zokukhusela, kunye nezixhobo zefotonic. Sinikezela ngothethwano olubanzi lobuchwephesha, uvavanyo lwesampulu, kunye nokwenza ngokwezifiso ibhetshi encinci ukuhambisa izisombululo eziphuculweyo zeLiTaO₃.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparamitha zobugcisa

Inkcazo	Ngokwesiqhelo	Ukuchaneka okuphezulu
Izinto eziphathekayo	I-LiTaO3(LT)/ ii-wafers ze-LiNbO3	LiTaO3(LT)/LiNbO3 wafers
Ukuqhelaniswa	X-112°Y,36°Y,42°Y±0.5°	X-112°Y,36°Y,42°Y±0.5°
Ngokunxuseneyo	30″	10''
Perpendicular	10′	5'
umphezulu Umgangatho	40/20	20/10
Ukuphazamiseka kweWavefront	λ/4@632nm	λ/8@632nm
Umphezulu oMcaba	λ/4@632nm	λ/8@632nm
Umngxuma ocacileyo	>90%	>90%
Chamfer	<0.2×45°	<0.2×45°
Ukutyeba/Ukunyamezelwa koMda	±0.1 mm	±0.1 mm
Ubukhulu bemilinganiselo	idia150×50mm	idia150×50mm

LiTaO₃ Ingot - Iimpawu eziphambili

1. I-Superior Piezoelectric & ne-Acoustic Performance

I-coezoelectric coefficient ephezulu (d₃₃~8 pC/N): Isebenza ngokugqithisileyo LiNbO₃ (~6 pC/N), eyenza izihluzi ze-SAW/BAW ze-high-frequency ezinelahleko yokufaka ephantsi kakhulu (<1.2 dB) ye-5G RF frontend.

Ukudityaniswa kwe-electromechanical olomeleleyo (K²~0.5%): Yongeza i-bandwidth kunye nokusebenza kakuhle kwe-Sub-6GHz kunye ne-mmWave iinkqubo zonxibelelwano.

2. Uzinzo lweThermal oluKhethekileyo

Ubushushu obuphezulu beCurie (600°C): Igcina ukusebenza kwe-piezoelectric okuzinzileyo kuyo yonke i -50°C ukuya kuma-300°C, ilungele i-automotive electronics kunye ne-industrial sensors.

I-coefficient yokwandisa i-thermal ephantsi (7.5×10⁻⁶/K): Yehlisa i-thermal drift kwizixhobo ezichanekileyo.

3. I-Optical & Chemical Robustness

Ukucaca kwe-Broadband (400-5000 nm): > 70% ukuhanjiswa kweefestile ze-IR kunye ne-electro-optic modulators.

I-Chemical inertness: Ixhathisa i-acids / alkali, efanelekileyo kwi-aerospace kunye nezicelo zokukhusela kwiindawo ezinzima.

4. Izakhono zokuziqhelanisa

Ubunjineli boqhelaniso: X/Y/Z-cut ingots (±0.5° tolerance) kwiipropathi ezilungiselelwe i-piezoelectric/optical.

Ukulungiswa kwe-doping: I-Mg-doping yokumelana nomonakalo wamehlo; I-Zn-doping yokuphucula impendulo ye-piezoelectric.

LiTaO₃ Ingot - Izicelo eziphambili

1. 5G & RF uNxibelelwano

Izihlungi ze-SAW / BAW: Nika amandla i-high-frequency (2-10 GHz), ilahleko ephantsi yokulungiswa kwesignali kwii-smartphones kunye nezikhululo ezisisiseko.

I-FBAR resonators: Hambisa i-Q-factor ephezulu (> 1000) kwii-oscillators ze-RF.

2. Optics & Infrared Technologies

Iifestile ze-IR detector: Kunyuswa ukukhanya kwebroadband kumfanekiso oshushu kunye nokujongwa kwakhona emkhosini.

Iimodyuli ze-Electro-optic: Ukuququzelela i-high-speed optical signal modulation kwi-fiber optics.

3. UVavanyo lweemoto kunye noShishino

Iinzwa ze-Ultrasonic: Uncedo lokupaka kunye ne-TPMS, ukumelana nobushushu begumbi le-injini.

Izinzwa zoxinzelelo lobushushu obuphezulu: Ukusebenza okuthembekileyo ekuhlolisweni kweoyile kunye nolawulo lwamashishini.

4. Ukhuselo & ne-Aerospace

Izihluzi ze-EW: Imitha-eqiniswe kwirada yomkhosi/ienkqubo zonxibelelwano.

Amacandelo okufuna i-Missile: Ukuzinza kwe-thermal kuqinisekisa ukuthembeka kwiimeko ezinzima.

5. I-Electronics yabathengi

Iimodyuli zeRF zangaphambili: Nyusa ukukhethwa kwesiginali kwii-smartphones.

Iinzwa zekhaya ezihlakaniphile: Uluhlu lwe-Ultrasonic kunye nokuqatshelwa komzimba.

Izinto eziluncedo eziphambili zeLiTaO₃ Ingots

1. UMgangatho weCrystal oKhethekileyo kunye nokuQondaniswa
Ii-LiTaO₃ Ingots zenziwa kusetyenziswa ucoceko oluphezulu lweTa₂O₅ (≥99.999%) kunye nendlela yeCzochralski (CZ) ephuculweyo, ukuphumeza:

Uxinzelelo olusezantsi kakhulu lwesiphene (i-dislocations <500 cm⁻², eziqukiweyo ≤5/cm³)

Ukwahluka kwe-Axial/radial resistivity <5% (ukuqinisekisa ukuhambelana kwebhetshi ukuya kwibhetshi)

X/Y/Z-cut ukuchaneka kolungelelwaniso ±0.5° (ukuhlangabezana neemfuno zesigaba sokuhambelana kwesixhobo se-SAW)

2. I-Superior Piezoelectric kunye ne-Thermal Performanc

I-piezoelectric coefficient ephezulu (d₃₃~8 pC/N), i-30% ephezulu kune-LiNbO₃, ilungele uyilo lokucoca i-BAW ephezulu

Ubushushu beCurie 600°C (uluhlu lokusebenza -50 ~ 300°C), ukugcinwa kwindawo ezingqongileyo ezigqithisileyo:

Umlinganiselo wobushushu obuninzi (TCF) <|-15ppm/°C|

I-Electromechanical coupling coefficient (K²) umahluko <0.5%

3. Ukwenza ngokwezifiso kunye nokuHlanganisa ukuguquguquka

Idoping ehlengahlengiswayo (MgO 0-8mol%):

I-5mol% i-doping ye-MgO yonyusa umda womonakalo we-laser nge-10x

I-Zn doping yongeza ilahleko yedielectric ye-microwave (tanδ<0.001 @10GHz)

Ukuhlanganiswa okungafaniyo: Ixhasa i-LNOI (i-LiTaO₃-on-Insulator) ukulungiswa kwefilimu encinci kunye nokudibanisa kunye ne-Si/SiN photonic chips

4. UQinisekiso loNikezo oluQhelekileyo

I-6-intshi (150mm) iteknoloji yokuvelisa ubunzima: i-40% yokunciphisa iindleko xa kuthelekiswa ne-4-intshi

Ukuhanjiswa okukhawulezayo: Uqhelaniso olusemgangathweni olufumanekayo kwisitokhwe (ixesha leeveki ezi-3), ixhasa ukwenziwa kwebhetshi encinci ukusuka kwi-5kg (umjikelo weeveki ezi-4)

LiTaO₃ Ingot - Iinkonzo ze-XKH

1. Iindleko zokuSebenza: i-8-intshi i-ingots inciphisa inkunkuma yezinto eziphathekayo nge-30% xa kuthelekiswa nezinye iindlela ze-intshi ezi-4, ukunciphisa iindleko zeyunithi nganye nge-18%.

2. Iimetriki zoMsebenzi:

I-SAW Filter Bandwidth: > 1.28 GHz (vs. 0.8 GHz yeLiTaO3), ibaluleke kakhulu kwiibhendi ze-5G mmWave.

I-Thermal Cycling: Ukusinda -200-500 ° C imijikelezo kunye <0.05% ye-warpage, eqinisekisiwe kuvavanyo lwe-automotive LiDAR.

1. Uzinzo: Iindlela zokusetyenzwa kwakhona zicutha ukusetyenziswa kwamanzi ngama-40% kunye nokusetyenziswa kwamandla ngama-25%.

Ukuqukumbela

Ii-ingots ze-LiTaO₃ ziyaqhubeka nokuqhuba izinto ezintsha kwi-5G yonxibelelwano, i-photonics, kunye neenkqubo zokukhusela ngokusebenzisa iipropati zabo ezizodwa ze-piezoelectric kunye nokuqina kwendalo. Ubuchwephesha bethu bezinto eziphathekayo, imveliso enokunyuka, kunye nenkxaso yobunjineli bezicelo zisibeka njengeqabane elikhethiweyo kwiinkqubo ze-elektroniki eziphambili.