I-InSb wafer eyi-2 intshi eyi-3 intshi engafakwanga i-Ntype P yohlobo lwe-111 100 yee-Infrared Detectors

I-InSb wafer eyi-2 intshi eyi-3 intshi engafakwanga uhlobo lwe-Ntype P 111 100 yee-Infrared Detectors Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ii-wafer ze-Indium Antimonide (InSb) zizinto ezibalulekileyo ezisetyenziswa kubuchwepheshe bokufumanisa i-infrared ngenxa ye-bandgap yazo encinci kunye nokuhamba okuphezulu kwe-electron. Ezi wafers zifumaneka kwii-diameters ezi-2-intshi kunye ne-3-intshi, zifumaneka kwiindidi ezahlukeneyo ze-undoped, N-type, kunye ne-P. Ezi wafers zenziwe nge-orientation ye-100 kunye ne-111, zibonelela ngokuguquguquka kwiindidi ezahlukeneyo ze-infrared detection kunye ne-semiconductor applications. Uvakalelo oluphezulu kunye nengxolo ephantsi yee-wafers ze-InSb zizenza zilungele ukusetyenziswa kwi-mid-wavelength infrared (MWIR) detectors, iinkqubo ze-infrared imaging, kunye nezinye izicelo ze-optoelectronic ezifuna ukuchaneka kunye nobuchule obuphezulu.

Thumela i-imeyile kuthi

Iimbonakalo

Iinketho zokusebenzisa i-doping:
1. Ayivulwanga:Ezi wafers azinazo naziphi na izinto ezibangela ukuba umntu atye idosi kwaye zisetyenziswa kakhulu kwizicelo ezikhethekileyo ezifana nokukhula kwe-epitaxial, apho i-wafer isebenza njengesiseko esicocekileyo.
Uhlobo lwe-2.N (olufakwe i-Te Doped):I-Tellurium (Te) doping isetyenziselwa ukwenza ii-wafers zohlobo lwe-N, ezibonelela ngokuhamba kwee-electron okuphezulu kwaye zizenze zilungele izixhobo zokubona i-infrared, ii-elektroniki ezikhawulezayo, kunye nezinye izicelo ezifuna ukuhamba kwee-electron okusebenzayo.
Uhlobo lwe-3.P (iGe Doped):I-Germanium (Ge) doping isetyenziselwa ukwenza ii-wafers zohlobo lwe-P, ibonelela ngokuhambahamba okunemingxuma ephezulu kwaye inikezela ukusebenza okugqwesileyo kwiisensa ze-infrared kunye nee-photodetectors.

Iinketho zobungakanani:
1. Iiwafers zifumaneka ngobubanzi obuziisentimitha ezi-2 kunye nobubanzi obuziisentimitha ezi-3. Oku kuqinisekisa ukuhambelana neenkqubo kunye nezixhobo ezahlukeneyo zokwenza ii-semiconductor.
2. I-wafer ye-intshi ezi-2 inobubanzi obuyi-50.8±0.3mm, ngelixa i-wafer ye-intshi ezi-3 inobubanzi obuyi-76.2±0.3mm.

Uqhelaniso:
1. Ii-wafers ziyafumaneka zineendlela zokujonga eziyi-100 kunye ne-111. Indlela yokujonga eyi-100 ifanelekile kwii-elektroniki ezikhawulezayo kunye nezixhobo zokubona nge-infrared, ngelixa indlela yokujonga eyi-111 isetyenziswa rhoqo kwizixhobo ezifuna iimpawu ezithile zombane okanye ze-optical.

Umgangatho womphezulu:
1. Ezi wafers ziza nemiphezulu ekhazimlisiweyo/eqoshiweyo ukuze zibe semgangathweni ogqwesileyo, nto leyo evumela ukusebenza kakuhle kwizicelo ezifuna iimpawu ezichanekileyo zokukhanya okanye zombane.
2. Ukulungiswa komphezulu kuqinisekisa ukuba i-wafers incinci, nto leyo eyenza ukuba ezi wafers zilungele ukusetyenziswa kwe-infrared apho ukusebenza kwazo kuxhomekeke kakhulu.

Ilungele i-Epi:
1. Ezi wafers zilungele i-epi, nto leyo eyenza ukuba zilungele ukusetyenziswa kwezixhobo ezibandakanya ukukhula kwe-epitaxial apho iileya ezongezelelweyo zezinto ziya kufakwa kwi-wafer ukuze kwenziwe izixhobo ze-semiconductor eziphambili okanye ze-optoelectronic.

Izicelo

1.Izixhobo zokufunxa i-infrared:Ii-wafer ze-InSb zisetyenziswa kakhulu ekwenzeni izixhobo zokubona i-infrared, ingakumbi kwiindawo eziphakathi kwe-infrared (MWIR). Zibalulekile kwiinkqubo zokubona ebusuku, imifanekiso yobushushu, kunye nokusetyenziswa kwemikhosi.
2. Iinkqubo zoMfanekiso we-Infrared:Ubukhali obuphezulu bee-InSb wafers buvumela ukuba kuthathwe imifanekiso ye-infrared ngokuchanekileyo kumacandelo ahlukeneyo, kuquka ukhuseleko, ukugada, kunye nophando lwesayensi.
3. Ii-elektroniki ezikhawulezayo:Ngenxa yokuhamba kwazo okuphezulu kwee-electron, ezi wafers zisetyenziswa kwizixhobo ze-elektroniki eziphambili ezifana nee-transistors ezinesantya esiphezulu kunye nezixhobo ze-optoelectronic.
4. Izixhobo zeQuantum Well:Ii-wafer ze-InSb zilungele ukusetyenziswa kwe-quantum well kwii-laser, ii-detectors, kunye nezinye iinkqubo ze-optoelectronic.

Iiparamitha zeMveliso

Ipharamitha	Iintshi ezi-2	Ii-intshi ezi-3
Ububanzi	50.8±0.3mm	76.2±0.3mm
Ubukhulu	500±5μm	650±5μm
Umphezulu	Ikhazimlisiwe/Iqoshwe	Ikhazimlisiwe/Iqoshwe
Uhlobo lokusebenzisa iziyobisi	Ayinadophu, iTe-doped (N), iGe-doped (P)	Ayinadophu, iTe-doped (N), iGe-doped (P)
Ukuqhelaniswa	100, 111	100, 111
Iphakheji	Ingatshatanga	Ingatshatanga
Ilungele i-Epi	Ewe	Ewe

Iiparameter zoMbane zeTe Doped (Uhlobo lwe-N):

Ukuhambahamba: 2000-5000 cm²/V·s
Ukuxhathisa: (1-1000) Ω·cm
I-EPD (Ubuninzi beeSiphene): ≤2000 iziphene/cm²

Iiparameter zoMbane zeGe Doped (Uhlobo lwe-P):

Ukuhambahamba: 4000-8000 cm²/V·s
Ukuxhathisa: (0.5-5) Ω·cm

I-EPD (Ubuninzi beeSiphene): ≤2000 iziphene/cm²

Imibuzo neempendulo (Imibuzo Ebuzwa Rhoqo)

Q1: Luluphi uhlobo olufanelekileyo lwe-doping kwizicelo zokufumanisa i-infrared?

A1:I-Te-doped (uhlobo lwe-N)Ii-wafers zihlala ziyindlela efanelekileyo yokuchonga i-infrared, njengoko zibonelela ngokuhamba okuphezulu kwee-electron kunye nokusebenza kakuhle kwi-mid-wavelength infrared (MWIR) detectors kunye neenkqubo zomfanekiso.

Umbuzo 2: Ndingayisebenzisa le wafers kwizicelo ze-elektroniki ezikhawulezayo?

A2: Ewe, ii-wafers ze-InSb, ingakumbi ezo zineUkusetyenziswa kweziyobisi kohlobo lwe-Nkwaye iUkuqhelaniswa kwe-100, zilungele kakuhle izixhobo ze-elektroniki ezikhawulezayo ezifana nee-transistors, izixhobo ze-quantum well, kunye nezixhobo ze-optoelectronic ngenxa yokuhamba kwazo okuphezulu kwee-electron.

Umbuzo 3: Yintoni umahluko phakathi kwe-100 kunye ne-111 orientation yee-InSb wafers?

A3: I100ulwalathiso lusetyenziswa kakhulu kwizixhobo ezifuna ukusebenza ngesantya esiphezulu se-elektroniki, ngelixa111Ulwalathiso ludla ngokusetyenziswa kwizicelo ezithile ezifuna iimpawu ezahlukeneyo zombane okanye ze-optical, kuquka izixhobo ezithile ze-optoelectronic kunye nee-sensors.

Umbuzo 4: Yintoni intsingiselo ye-Epi-Ready feature kwi-InSb wafers?

A4: IIlungele i-Epiuphawu luthetha ukuba i-wafer ilungisiwe kwangaphambili kwiinkqubo zokubeka i-epitaxial. Oku kubalulekile kwizicelo ezifuna ukukhula kweengqimba ezongezelelweyo zezinto phezu kwe-wafer, njengakwimveliso yezixhobo eziphambili ze-semiconductor okanye ze-optoelectronic.

Umbuzo 5: Ziziphi iindlela eziqhelekileyo zokusetyenziswa kwee-wafers ze-InSb kwicandelo lobuchwepheshe be-infrared?

A5: Ii-wafer ze-InSb zisetyenziswa kakhulu ekufumaneni i-infrared, imifanekiso yobushushu, iinkqubo zokubona ebusuku, kunye nezinye iiteknoloji zokubona i-infrared. Uvakalelo lwazo oluphezulu kunye nengxolo ephantsi kuzenza zilungele ukusetyenziswa.i-infrared yobude obuphakathi (MWIR)izixhobo zokufumanisa.

Umbuzo 6: Ubukhulu be-wafer buyichaphazela njani indlela esebenza ngayo?

A6: Ubukhulu be-wafer budlala indima ebalulekileyo ekuzinzeni kwayo koomatshini kunye neempawu zombane. Ii-wafer ezincinci zihlala zisetyenziswa kwiindawo ezinobuthathaka ngakumbi apho kufuneka ulawulo oluchanekileyo kwiimpawu zezinto, ngelixa ii-wafer ezinkulu zibonelela ngokuqina okuphuculweyo kwiindawo ezithile zoshishino.

Umbuzo 7: Ndingayikhetha njani isayizi ye-wafer efanelekileyo kwisicelo sam?

A7: Ubungakanani be-wafer efanelekileyo buxhomekeke kwisixhobo okanye inkqubo ethile eyiliweyo. Ii-wafer ezincinci (ii-intshi ezi-2) zihlala zisetyenziselwa uphando kunye nokusetyenziswa okuncinci, ngelixa ii-wafer ezinkulu (ii-intshi ezi-3) zihlala zisetyenziselwa ukuvelisa ngobuninzi kunye nezixhobo ezinkulu ezifuna izinto ezingaphezulu.

Isiphelo

Iiwafer ze-InSb ngaphakathiIintshi ezi-2kwayeIi-intshi ezi-3ubukhulu, kunyeisusiwe, Uhlobo lwe-NkunyeUhlobo lwe-Piinguqulelo, zixabiseke kakhulu kwizicelo ze-semiconductor kunye ne-optoelectronic, ingakumbi kwiinkqubo zokufumanisa i-infrared.100kwaye111Iindlela zokujonga izinto zibonelela ngokuguquguquka kwiimfuno ezahlukeneyo zobuchwepheshe, ukusuka kwi-elektroniki ekhawulezayo ukuya kwiinkqubo zomfanekiso we-infrared. Ngenxa yokuhamba kwazo okugqwesileyo kwe-electron, ingxolo ephantsi, kunye nomgangatho ochanekileyo womphezulu, ezi wafers zilungele kakhuluizixhobo zokubona i-infrared eziphakathi kwamazakunye nezinye izicelo ezisebenza kakuhle.