I-InSb wafer 2inch 3inch engagotywanga uhlobo lwe-P lokuqhelaniswa ne-111 100 ye-Infrared Detectors

Inkcazelo emfutshane:

Ii-wafers ze-Indium Antimonide (InSb) zizinto eziphambili ezisetyenziswa kubuchwephesha bokubona i-infrared ngenxa ye-bandgap emxinwa kunye nokuhamba kwe-electron ephezulu. Ifumaneka kwi-2-intshi kunye ne-3-intshi ububanzi, ezi wafers zinikezelwa ngokungafaniyo, uhlobo lwe-N, kunye nohlobo lwe-P. Ii-wafers zenziwe ngokuqhelaniswa ne-100 kunye ne-111, zibonelela ngokuguquguquka kweendlela ezahlukeneyo zokufumanisa i-infrared kunye nezicelo ze-semiconductor. Uvakalelo oluphezulu kunye nengxolo ephantsi yee-wafers ze-InSb zenza ukuba zilungele ukusetyenziswa kwi-mid-wavelength infrared (MWIR) detectors, iinkqubo ze-infrared imaging, kunye nezinye izicelo ze-optoelectronic ezifuna ukuchaneka kunye nokusebenza okuphezulu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimbonakalo

Ukhetho lweDoping:
1.Akujikwanga:Ezi ziqwenga zikhululekile kuyo nayiphi na i-doping agents kwaye zisetyenziselwa ngokukodwa izicelo ezikhethekileyo ezifana nokukhula kwe-epitaxial, apho i-wafer isebenza njenge-substrate ecocekileyo.
2.N-Udidi (Te Doped):I-Tellurium (Te) i-doping isetyenziselwa ukudala ii-wafers zohlobo lwe-N, ezinikezela ukuhamba kwe-electron ephezulu kwaye zibenze zilungele ii-detectors ze-infrared, i-electronics-speed-speed, kunye nezinye izicelo ezifuna ukuhamba kwe-electron esebenzayo.
3.P-Uhlobo (Ge Doped):I-Germanium (Ge) idoping isetyenziselwa ukwenza ii-wafers zohlobo lwe-P, ezibonelela ngokushukuma komngxuma ophezulu kunye nokubonelela ngokusebenza okugqwesileyo kwezinzwa ze-infrared kunye ne-photodetectors.

Iinketho zobungakanani:
1.Ii-wafers zifumaneka kwi-2-intshi kunye ne-3-intshi ububanzi. Oku kuqinisekisa ukuhambelana neenkqubo ezahlukeneyo zokwenziwa kwe-semiconductor kunye nezixhobo.
2.I-intshi ye-2-intshi ye-wafer inobubanzi obuyi-50.8±0.3mm, ngelixa i-intshi ye-3-intshi ine-76.2±0.3mm ububanzi.

Uqhelaniso:
I-1.Ii-wafers zifumaneka ngokuqhelaniswa ne-100 kunye ne-111. Ukuqhelaniswa kwe-100 kulungele i-high-speed electronics kunye ne-infrared detectors, ngelixa i-111 i-orientation isetyenziswa rhoqo kwizixhobo ezifuna iimpawu ezithile zombane okanye i-optical.

Umgangatho womphezulu:
1.Ezi wafers ziza neendawo ezikhazimlisiweyo/ezichwetheziweyo zomgangatho ogqwesileyo, okwenza ukuba ukusebenza ngokugqibeleleyo kwizicelo ezifuna iimpawu ezichanekileyo zokukhanya okanye zombane.
I-2.Ukulungiswa komphezulu kuqinisekisa ukuxinwa kwesiphako esiphantsi, okwenza ezi ziqwenga zilungele ukukhangela izicelo ze-infrared apho ukuhambelana nokusebenza kubalulekile.

I-Epi-Ready:
1.Ezi wafers zi-epi-ready, zizenza zilungele izicelo ezibandakanya ukukhula kwe-epitaxial apho iileya ezongezelelweyo zemathiriyeli ziya kufakwa kwi-wafer ye-semiconductor okanye i-optoelectronic device fabrication.

Usetyenziso

1.Izichongi ze-infrared:Ii-wafers ze-InSb zisetyenziswa kakhulu ekwenziweni kwee-infrared detectors, ngakumbi kuluhlu lwe-mid-wavelength infrared (MWIR). Zibalulekile kwiinkqubo zokubona ebusuku, ukucinga nge-thermal, kunye nezicelo zomkhosi.
2.Iinkqubo zomfanekiso we-Infrared:Uvakalelo oluphezulu lwee-wafers ze-InSb luvumela umfanekiso ochanekileyo we-infrared kumacandelo ahlukeneyo, kubandakanya ukhuseleko, ucupho, kunye nophando lwezenzululwazi.
3.I-Eletroniki enesantya esiphezulu:Ngenxa yokushukuma kwazo okuphezulu kwe-electron, ezi ziqwenga zisetyenziswa kwizixhobo zombane ezikumgangatho ophezulu ezifana ne-high-speed transistors kunye nezixhobo ze-optoelectronic.
4.Izixhobo zeQuantum Well:Ii-wafers ze-InSb zilungele ukusetyenziswa kwe-quantum kakuhle kwiilaser, ii-detectors, kunye nezinye iinkqubo ze-optoelectronic.

Iiparamitha zeMveliso

Ipharamitha	2-intshi	3-intshi
Ububanzi	50.8±0.3mm	76.2±0.3mm
Ukutyeba	500±5μm	650±5μm
Umphezulu	Ikhazimlisiwe/Ichongiwe	Ikhazimlisiwe/Ichongiwe
Uhlobo lweDoping	Ingatyhilwa, iTe-doped (N), Ge-doped (P)	Ingatyhilwa, iTe-doped (N), Ge-doped (P)
Ukuqhelaniswa	100, 111	100, 111
Iphakheji	Ungatshatanga	Ungatshatanga
Epi-Ready	Ewe	Ewe

Iiparamitha zoMbane zeTe Doped (N-Type):

Ukushukuma: 2000-5000 cm²/V·s
Ukuxhathisa: (1-1000) Ω·cm
I-EPD (Ukuxinana kwesiphene): ≤2000 iziphene/cm²

Iiparamitha zoMbane zeGe Doped (P-Type):

Ukushukuma: 4000-8000 cm²/V·s
Ukuxhathisa: (0.5-5) Ω·cm

I-EPD (Ukuxinana kwesiphene): ≤2000 iziphene/cm²

Q&A (imibuzo ebuzwa rhoqo)

I-Q1: Loluphi uhlobo lwe-doping olufanelekileyo lwezicelo zokubona i-infrared?

A1:I-Te-doped (N-uhlobo)iiwafers ngokuqhelekileyo lolona khetho lufanelekileyo lwezicelo zokubona i-infrared, njengoko zibonelela ngokushukuma kwe-electron ephezulu kunye nokusebenza okugqwesileyo kwi-mid-wavelength infrared (MWIR) yokubona kunye neenkqubo zokucinga.

I-Q2: Ndingazisebenzisa ezi ziphaluka kwizicelo ze-elektroniki ezinesantya esiphezulu?

A2: Ewe, ii-wafers ze-InSb, ngakumbi ezo zineN-uhlobo lwedopingkwaye i100 uqhelaniso, zifanelekile kwi-electronics-speed-speed electronics ezifana ne-transistors, izixhobo ze-quantum well, kunye ne-optoelectronic components ngenxa yokuhamba kwazo okuphezulu kwe-electron.

I-Q3: Nguwuphi umahluko phakathi kwe-100 kunye ne-111 yokuqhelaniswa kwee-wafers ze-InSb?

A3: I100Uqhelaniso luqhele ukusetyenziswa kwizixhobo ezifuna ukusebenza ngesantya esiphezulu sombane, ngelixa i111i-orientation isoloko isetyenziselwa izicelo ezithile ezifuna iimpawu ezahlukeneyo zombane okanye zamehlo, kubandakanywa izixhobo ezithile ze-optoelectronic kunye nezinzwa.

I-Q4: Yintoni intsingiselo ye-Epi-Ready feature ye-InSb wafers?

A4:IiEpi-Readyisici sithetha ukuba iwafer inyangwe kwangaphambili kwiinkqubo zokubeka i-epitaxial. Oku kubalulekile kwizicelo ezifuna ukukhula kweemaleko ezongezelelweyo zemathiriyeli ngaphezulu kwewafa, njengokwenziwa kwezixhobo eziphucukileyo zesemiconductor okanye izixhobo ze-optoelectronic.

I-Q5: Zeziphi iinkqubo eziqhelekileyo zokusetyenziswa kwee-wafers ze-InSb kwindawo yetekhnoloji ye-infrared?

I-A5: Ii-wafers ze-InSb zisetyenziswa ikakhulu ekubhaqweni kwe-infrared, ukucinga nge-thermal, iinkqubo zokubona ebusuku, kunye nobunye ubuchwepheshe bokuva i-infrared. Uvakalelo lwabo oluphezulu kunye nengxolo ephantsi ibenza balungelei-infrared yobude obuphakathi (MWIR)izixhobo zokubona.

I-Q6: Ubunzima be-wafer buchaphazela njani ukusebenza kwayo?

I-A6: Ubuninzi be-wafer budlala indima ebalulekileyo ekuzinzeni kwayo komatshini kunye neempawu zombane. Iiwafer ezibhityileyo zihlala zisetyenziswa kwizicelo ezinovakalelo ngakumbi apho kufuneka ulawulo oluchanekileyo kwiipropathi zemathiriyeli, ngelixa iiwafa ezityebileyo zibonelela ngokuqina okongeziweyo kwizicelo ezithile zemizi-mveliso.

I-Q7: Ndingayikhetha njani isayizi ye-wafer efanelekileyo kwisicelo sam?

A7: Ubungakanani obufanelekileyo be-wafer buxhomekeke kwisixhobo esithile okanye inkqubo eyilwayo. Ii-wafers ezincinci (i-intshi ezi-2) zihlala zisetyenziselwa uphando kunye nezicelo ezincinci, ngelixa ii-wafers ezinkulu (i-intshi ezi-3) ziqhele ukusetyenziselwa imveliso yobuninzi kunye nezixhobo ezinkulu ezifuna imathiriyeli eninzi.

Ukuqukumbela

Ii-wafers ze-InSb ngaphakathi2-intshikwaye3-intshiubukhulu, ngeingashenxiswa, N-uhlobo, kwayeUhlobo lwePiinguqu, zixabiseke kakhulu kwi-semiconductor kunye nezicelo ze-optoelectronic, ngokukodwa kwiinkqubo zokubona i-infrared. I100kwaye111Uqhelaniso lubonelela ngokuguquguquka kwiimfuno ezahlukeneyo zetekhnoloji, ukusuka kwisantya esiphezulu sombane ukuya kwiinkqubo zokucinga nge-infrared. Ngokushukuma kwe-electron ekhethekileyo, ingxolo ephantsi, kunye nomgangatho ochanekileyo womphezulu, ezi ziqwenga zilungele.i-infrared yobude obuphakathikunye nezinye izicelo eziphezulu zokusebenza.