I-Industrial Sapphire Lift Rod kunye nePin, i-High Hardness ye-Al2O3 ye-Sapphire Pin yokuPhathwa kwe-Wafer, i-Radar System kunye ne-Semiconductor Processing - Ububanzi be-1.6mm ukuya kwi-2mm
Abstract
I-Industrial Sapphire Lift Rod kunye nePin ziyilelwe ngokuchaneka kunye nokuqina kwizicelo ezifunwa kakhulu ezifana nokuphathwa kwe-wafer, iinkqubo ze-radar, kunye nokulungiswa kwe-semiconductor. Yenziwe kwi-crystal eyodwa ye-Al2O3 (isafire), ezi zikhonkwane zinika ubunzima obubalaseleyo kunye nokumelana ne-thermal. Ifumaneka kwi-diameters ukusuka kwi-1.6mm ukuya kwi-2mm, ezi ntonga zokunyusa kunye nezikhonkwane ziyakwazi ukulungelelanisa iimfuno ezikhethekileyo zoshishino. Babonelela ngokugqwesa ukuxhathisa ukukrwempa kunye nokunxiba okuphantsi, okubenza babe ngamacandelo abalulekileyo kwiinkqubo zokusebenza eziphezulu.
Iimbonakalo
● Ukuqina okuPhezulu kunye noKuhlala ixesha elide:Ngobunzima be-Mohs be-9, ezi zikhonkwane kunye neentonga zixhathisa ukukrala, ziqinisekisa ukusebenza kwexesha elide kwizicelo eziphezulu zokunxiba.
● Ubungakanani obulungele wena:Ifumaneka kwi-diameters ukusuka kwi-1.6mm ukuya kwi-2mm, kunye nenketho yemilinganiselo yesiko ukuhlangabezana neemfuno ezithile zesicelo.
●Ukumelana neThermal:Iqondo eliphezulu lokunyibilika kweSapphire (2040°C) liqinisekisa ukuba ezi zikhonkwane ziyakwazi ukumelana nobushushu obuphezulu ngaphandle kokuthotywa.
● Iinkcazelo Ngeempawu eziBalaseleyo:Ukucaca okubonakalayo kweSapphire kwenza ezi zikhonkwane zokuphakamisa zilungele ukusetyenziswa kwiinkqubo zamehlo kunye nezixhobo ezichanekileyo.
●I-Low Friction kunye nokunxiba:Umphezulu ogudileyo wesafire unciphisa ukunxiba kuzo zombini izikhonkwane zokuphakamisa kunye nezixhobo, ukunciphisa iindleko zokulondolozwa.
Usetyenziso
●Ukuphatha iWafer:Isetyenziselwa ukusetyenzwa kwe-semiconductor yokuguqulwa kwe-wafer eethe-ethe.
● IiNkqubo zeRada:Izikhonkwane eziphezulu zokusebenza ezisetyenziselwa kwiinkqubo ze-radar zokuqina kwazo kunye nokuchaneka.
●Ukwenziwa kweSemiconductor:Igqibelele ukuphatha ama-wafers kunye namanye amacandelo kwiinkqubo zokwenziwa kwe-semiconductor ephezulu.
● Iinkqubo zoShishino:Ifanelekile kwiinkqubo ezahlukeneyo zemizi-mveliso ezifuna ukuqina okuphezulu kunye nokuchaneka.
Iiparamitha zeMveliso
| Uphawu | Inkcazo |
| Izinto eziphathekayo | ICrystal enye Al2O3 (Sapphire) |
| Ukuqina | Mohs 9 |
| Uluhlu lweDiameter | 1.6mm ukuya 2mm |
| I-Thermal Conductivity | 27 W·m^-1·K^-1 |
| Indawo yokunyibilika | 2040°C |
| Ukuxinana | 3.97g/cc |
| Usetyenziso | UkuPhathwa kweWafer, iiNkqubo zeRadar, ukuPhathwa kweSemiconductor |
| Ukwenza ngokwezifiso | Iyafumaneka ngoBubungakanani beSiko |
Q&A (imibuzo ebuzwa rhoqo)
I-Q1: Kutheni isafire iyimathiriyeli efanelekileyo yezikhonkwane zokuphakamisa ezisetyenziselwa ukuphatha i-wafer?
A1: Isafire kakhuluukumelana nemikrwelokwaye unayo aindawo yokunyibilika ephezulu, iyenza ibe yimathiriyeli egqwesileyo kwimisebenzi ebuthathaka njengeukuphatha i-wafer, apho ukuchaneka kunye nokuqina kubalulekile.
I-Q2: Yintoni inzuzo yokwenza ngokwezifiso ubungakanani bezikhonkwane zokuphakamisa isafire?
A2: Ubungakanani obuqhelekileyo buvumela ezi zikhonkwane zokuphakamisa ukuba zilungelelaniswe ukuze zilungele izicelo ezithile, ziqinisekisa ukusebenza kakuhle kwiinkqubo ezahlukeneyo, kuquka.ukusetyenzwa kwe-semiconductorkwayeiinkqubo zerada.
I-Q3: Ngaba izikhonkwane zokuphakamisa isafire zinokusetyenziswa kwizicelo eziphezulu zokushisa?
A3: Ewe,isafireuneindawo yokunyibilika ephezuluye2040°C, iyenza ilungele ukusetyenziswa kwiindawo ezinobushushu obuphezulu.
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