Iiwafers ze-Indium Antimonide (InSb) Uhlobo lwe-N Uhlobo lwe-P I-Epi ilungile ingafakwanga Iiwafers ezifakwe idophi okanye i-Ge ezifakwe idophi I-2inch 3inch 4inch ubukhulu Iiwafers ze-Indium Antimonide (InSb)
Iimbonakalo
Iinketho zokusebenzisa i-doping:
1. Ayivulwanga:Ezi wafers azinazo naziphi na izinto ezibangela ukuba zisetyenziswe kakubi, nto leyo eyenza ukuba zilungele ukusetyenziswa okukhethekileyo njengokukhula kwe-epitaxial.
2. I-Doped (Uhlobo lwe-N):I-Tellurium (Te) doping isetyenziswa kakhulu ukwenza ii-wafers zohlobo lwe-N, ezifanelekileyo kwizicelo ezifana ne-infrared detectors kunye ne-electronics ezikhawulezayo.
3. I-Ge Doped (Uhlobo lwe-P):I-Germanium (Ge) doping isetyenziselwa ukwenza ii-wafers zohlobo lwe-P, ezibonelela ngokuhambahamba okunemingxuma ephezulu kwizicelo ze-semiconductor eziphambili.
Iinketho zobungakanani:
1. Zifumaneka ngobubanzi obuziisentimitha ezi-2, iisentimitha ezi-3, kunye neesentimitha ezi-4. Ezi wafers zilungele iimfuno ezahlukeneyo zobuchwepheshe, ukusuka kuphando nophuhliso ukuya kwimveliso enkulu.
2. Ukunyamezelana kobubanzi obuchanekileyo kuqinisekisa ukuhambelana kuzo zonke iibhetshi, kunye nobubanzi obuyi-50.8±0.3mm (kwii-wafers ezi-2-intshi) kunye ne-76.2±0.3mm (kwii-wafers ezi-3-intshi).
Ulawulo lokutyeba:
1. Iiwafers ziyafumaneka ngobukhulu obuyi-500±5μm ukuze zisebenze kakuhle kwizicelo ezahlukeneyo.
2.Imilinganiselo eyongezelelweyo efana ne-TTV (Total Thickness Variation), i-BOW, kunye ne-Warp ilawulwa ngononophelo ukuqinisekisa ukufana okuphezulu kunye nomgangatho.
Umgangatho womphezulu:
1. Iiwafers ziza nomphezulu ocoliweyo/oqoshiweyo ukuze kuphuculwe ukusebenza kwe-optical kunye nombane.
2. Ezi ndawo zilungele ukukhula kwe-epitaxial, zibonelela ngesiseko esigudileyo sokuqhubekeka nokusebenza kwizixhobo ezisebenza kakuhle.
Ilungele i-Epi:
1. Ii-wafer ze-InSb zilungele i-epi, oko kuthetha ukuba zinyangwa kwangaphambili kwiinkqubo zokufakwa kwe-epitaxial. Oku kuzenza zilungele ukusetyenziswa kwimveliso ye-semiconductor apho kufuneka kukhuliswe iileya ze-epitaxial phezu kwe-wafer.
Izicelo
1.Izixhobo zokufunxa i-infrared:Ii-wafer ze-InSb zisetyenziswa kakhulu ekufumaneni i-infrared (IR), ingakumbi kuluhlu lwe-infrared (MWIR) oluphakathi. Ezi wafer zibalulekile ekuboneni ebusuku, ekufomeni ngobushushu, nakwizicelo ze-infrared spectroscopy.
2. Ii-elektroniki ezikhawulezayo:Ngenxa yokuhamba kwazo okuphezulu kwee-electron, ii-InSb wafers zisetyenziswa kwizixhobo ze-elektroniki ezihamba ngesantya esiphezulu ezifana nee-transistors ezisebenzisa i-high-frequency, izixhobo ze-quantum well, kunye nee-transistors ezisebenzisa i-high-electron mobility (HEMTs).
3. Izixhobo zeQuantum Well:I-bandgap encinci kunye nokuhamba kakuhle kwee-electron kwenza ii-wafers ze-InSb zilungele ukusetyenziswa kwizixhobo ze-quantum well. Ezi zixhobo zizinto ezibalulekileyo kwi-laser, kwi-detectors, nakwezinye iinkqubo ze-optoelectronic.
4. Izixhobo zeSpintronic:I-InSb ikwajongwa kwizicelo ze-spintronic, apho i-electron spin isetyenziselwa ukucubungula ulwazi. Ukudibanisa okuphantsi kwe-spin-orbit yezixhobo kwenza ukuba ilungele ezi zixhobo zisebenza kakuhle.
5. Izicelo zemitha yeTerahertz (THz):Izixhobo ezisekelwe kwi-InSb zisetyenziswa kwizicelo zemitha ye-THZ, kuquka uphando lwesayensi, imifanekiso, kunye nokuchazwa kwezinto. Zivumela ubuchwepheshe obuphambili obufana ne-THZ spectroscopy kunye neenkqubo zemifanekiso ye-THZ.
6. Izixhobo zeThermoelectric:Iimpawu ezikhethekileyo ze-InSb ziyenza ibe yinto ekhangayo kwizicelo ze-thermoelectric, apho inokusetyenziselwa ukuguqula ubushushu bube ngumbane ngokufanelekileyo, ingakumbi kwizicelo ze-niche ezifana netekhnoloji yesithuba okanye ukuveliswa kombane kwiindawo ezishushu kakhulu.
Iiparamitha zeMveliso
| Ipharamitha | Iintshi ezi-2 | Ii-intshi ezi-3 | Ii-intshi ezi-4 |
| Ububanzi | 50.8±0.3mm | 76.2±0.3mm | - |
| Ubukhulu | 500±5μm | 650±5μm | - |
| Umphezulu | Ikhazimlisiwe/Iqoshwe | Ikhazimlisiwe/Iqoshwe | Ikhazimlisiwe/Iqoshwe |
| Uhlobo lokusebenzisa iziyobisi | Ayinadophu, iTe-doped (N), iGe-doped (P) | Ayinadophu, iTe-doped (N), iGe-doped (P) | Ayinadophu, iTe-doped (N), iGe-doped (P) |
| Ukuqhelaniswa | (100) | (100) | (100) |
| Iphakheji | Ingatshatanga | Ingatshatanga | Ingatshatanga |
| Ilungele i-Epi | Ewe | Ewe | Ewe |
Iiparameter zoMbane zeTe Doped (Uhlobo lwe-N):
- Ukuhambahamba: 2000-5000 cm²/V·s
- Ukuxhathisa: (1-1000) Ω·cm
- I-EPD (Ubuninzi beeSiphene): ≤2000 iziphene/cm²
Iiparameter zoMbane zeGe Doped (Uhlobo lwe-P):
- Ukuhambahamba: 4000-8000 cm²/V·s
- Ukuxhathisa: (0.5-5) Ω·cm
- I-EPD (Ubuninzi beeSiphene): ≤2000 iziphene/cm²
Isiphelo
Ii-wafer ze-Indium Antimonide (InSb) zizinto ezibalulekileyo kwiintlobo ngeentlobo zezicelo zokusebenza okuphezulu kwicandelo le-elektroniki, i-optoelectronics, kunye netekhnoloji ye-infrared. Ngenxa yokuhamba kwazo kakuhle kwee-electron, i-spin-orbit coupling ephantsi, kunye neendlela ezahlukeneyo zokusebenzisa i-doping (i-Te ye-N-type, i-Ge ye-P-type), ii-wafer ze-InSb zilungele ukusetyenziswa kwizixhobo ezifana nee-infrared detectors, ii-transistors ezikhawulezayo, izixhobo ze-quantum well, kunye nezixhobo ze-spintronic.
Iiwafers zifumaneka ngobukhulu obahlukeneyo (ii-intshi ezi-2, ii-intshi ezi-3, kunye nee-intshi ezi-4), zinolawulo oluchanekileyo lobukhulu kunye neendawo ezilungele ukubola, ukuqinisekisa ukuba ziyahlangabezana neemfuno ezingqongqo zokwenza ii-semiconductor zanamhlanje. Ezi wafers zilungele ukusetyenziswa kwiindawo ezifana nokuchonga i-IR, izixhobo ze-elektroniki ezikhawulezayo, kunye nemitha ye-THz, nto leyo evumela ubuchwepheshe obuphambili kuphando, kushishino, nakwizokhuselo.
Umzobo oneenkcukacha
