I-Indium Antimonide (InSb) ii-wafers ze-Indium Antimonide (InSb) uhlobo lwe-N uhlobo lwe-P i-Epi elungele ukuvuthululwa i-Te doped okanye i-Ge doped 2inch 3inch 4inch ubukhulu bobukhulu be-Indium Antimonide (InSb) iiwafers

I-Indium Antimonide (InSb) wafers N uhlobo lwe-P uhlobo lwe-Epi ilungele ukungashukuxwa I-doped okanye i-Ge doped 2inch 3inch 4inch ubukhulu be-Indium Antimonide (InSb) iiwafers eziboniswayo

Inkcazelo emfutshane:

Ii-wafers ze-Indium Antimonide (InSb) ziyinxalenye ephambili kwi-high-performance electronic and optoelectronic applications. Ezi wafers zifumaneka kwiindidi ezahlukeneyo, kubandakanywa udidi lwe-N, uhlobo lwe-P, kunye nokungagqitywanga, kwaye zinokujongwa ngezinto ezifana neTellurium (Te) okanye iGerinium (Ge). Ii-wafers ze-InSb zisetyenziswa kakhulu ekubhaqweni kwe-infrared, iitransistor ezinesantya esiphezulu, izixhobo zequla le-quantum, kunye nezinye izixhobo ezikhethekileyo ngenxa yokushukuma kwazo kwe-electron okugqwesileyo kunye nebhendi emxinwa. Ii-wafers zifumaneka kwii-diameters ezahlukeneyo ezifana ne-2-intshi, i-3-intshi, kunye ne-intshi ye-4-intshi, kunye nolawulo oluchanekileyo kunye nomgangatho ophezulu opolishiweyo / odwetshiweyo.

Thumela i-imeyile kuthi

Iimbonakalo

Ukhetho lweDoping:
1.Akujikwanga:Ezi ziqwenga zikhululekile kuzo naziphi na ii-agent ze-doping, zizenza zilungele usetyenziso olukhethekileyo olunjengokukhula kwe-epitaxial.
2.Te Doped (N-Type):I-Tellurium (Te) i-doping isetyenziswa ngokuqhelekileyo ukwenza ii-wafers ze-N, ezilungele izicelo ezifana ne-infrared detectors kunye ne-high-speed electronics.
3.Ge Doped (P-Type):I-Germanium (Ge) i-doping isetyenziselwa ukudala ii-wafers zohlobo lwe-P, ezinikezela ukuhamba komngxuma ophezulu kwii-application ze-semiconductor eziphambili.

Iinketho zobungakanani:
I-1.Ifumaneka kwi-intshi ezi-2, i-3-intshi, kunye ne-4-intshi ububanzi. Ezi ziqwenga zibonelela ngeemfuno ezahlukeneyo zobuchwepheshe, ukusuka kuphando kunye nophuhliso ukuya kwimveliso enkulu.
2.Ukunyamezelwa kwedayamitha echanekileyo kuqinisekisa ukuhambelana kwiibhetshi zonke, ezinobubanzi obuyi-50.8±0.3mm (kwi-wafers ezi-intshi ezi-2) kunye ne-76.2±0.3mm (ye-3-intshi yama-wafers).

Ulawulo lokutyeba:
1.Ii-wafers ziyafumaneka ezinobunzima obuyi-500±5μm ukuze zisebenze ngokugqibeleleyo kwizicelo ezahlukeneyo.
I-2.Imilinganiselo eyongezelelweyo efana ne-TTV (i-Total Thickness Variation), i-BOW, kunye ne-Warp zilawulwa ngokucophelela ukuze kuqinisekiswe ukufana okuphezulu kunye nomgangatho.

Umgangatho womphezulu:
1.Ii-wafers ziza kunye nomphezulu opolishiweyo / oqingqiweyo wokuphucula ukusebenza kwamehlo kunye nombane.
2.Ezi ndawo zilungele ukukhula kwe-epitaxial, inikezela isiseko esiluqilima sokuqhubela phambili kwizixhobo zokusebenza eziphezulu.

I-Epi-Ready:
1.Ii-wafers ze-InSb zi-epi-ready, okuthetha ukuba zinyangwe kwangaphambili kwiinkqubo zokubeka i-epitaxial. Oku kubenza balungele usetyenziso kwimveliso ye-semiconductor apho iileya ze-epitaxial kufuneka zikhuliswe ngaphezulu kwe-wafer.

Usetyenziso

1.Izichongi ze-infrared:Ii-wafers ze-InSb ziqhele ukusetyenziswa kubhaqo lwe-infrared (IR), ngakumbi kuluhlu lwe-infrared ye-wavelength ephakathi (MWIR). Ezi ziqwenga zibalulekile kumbono wasebusuku, ukubonwa kwe-thermal, kunye nosetyenziso lwe-infrared spectroscopy.

2.I-Eletroniki enesantya esiphezulu:Ngenxa yokushukuma kwe-electron ephezulu, ii-wafers ze-InSb zisetyenziswa kwizixhobo zombane ezinesantya esiphezulu ezifana ne-high-frequency transistors, izixhobo ze-quantum well, kunye ne-high-electron mobility transistors (HEMTs).

3.Izixhobo zeQuantum Well:Ibhendi emxinwa kunye nokuhamba okugqwesileyo kwe-electron kwenza ukuba ii-wafers ze-InSb zilungele ukusetyenziswa kwizixhobo zequla le-quantum. Ezi zixhobo zizinto eziphambili kwiilaser, detectors, kunye nezinye iinkqubo ze-optoelectronic.

4.Izixhobo zeSpintronic:I-InSb ikwaphononongwa kwizicelo ze-spintronic, apho i-electron spin isetyenziselwa ukusetyenzwa kolwazi. Udibaniso olusezantsi lwe-spin-orbit luyenza ilungele ezi zixhobo zisebenza kakhulu.

5.Terahertz (THz) Ukusetyenziswa kweRadiation:Izixhobo ezisekelwe kwi-InSb zisetyenziswa kwizicelo zemitha ye-THz, kubandakanywa uphando lwezenzululwazi, umfanekiso, kunye nokubonakaliswa kwezinto. Benza itekhnoloji ephezulu efana ne-THz spectroscopy kunye ne-THz imaging systems.

6.Izixhobo zombane:Iimpawu ezikhethekileyo ze-InSb zenza ukuba ibe yinto ekhangayo kwizicelo zombane we-thermoelectric, apho ingasetyenziselwa ukuguqula ukushisa kumbane ngokufanelekileyo, ngokukodwa kwizicelo ze-niche ezifana neteknoloji yendawo okanye ukuveliswa kwamandla kwiindawo ezigqithiseleyo.

Iiparamitha zeMveliso

Ipharamitha	2-intshi	3-intshi	4-intshi
Ububanzi	50.8±0.3mm	76.2±0.3mm	-
Ukutyeba	500±5μm	650±5μm	-
Umphezulu	Ikhazimlisiwe/Ichongiwe	Ikhazimlisiwe/Ichongiwe	Ikhazimlisiwe/Ichongiwe
Uhlobo lweDoping	Ingatyhilwa, iTe-doped (N), Ge-doped (P)	Ingatyhilwa, iTe-doped (N), Ge-doped (P)	Ingatyhilwa, iTe-doped (N), Ge-doped (P)
Ukuqhelaniswa	(100)	(100)	(100)
Iphakheji	Ungatshatanga	Ungatshatanga	Ungatshatanga
Epi-Ready	Ewe	Ewe	Ewe

IiParameters zoMbane zeTe Doped (N-Type):

Ukushukuma: 2000-5000 cm²/V·s
Ukuxhathisa: (1-1000) Ω·cm
I-EPD (Ukuxinana kwesiphene): ≤2000 iziphene/cm²

IiParameters zoMbane zeGe Doped (P-Type):

Ukushukuma: 4000-8000 cm²/V·s
Ukuxhathisa: (0.5-5) Ω·cm
I-EPD (Ukuxinana kwesiphene): ≤2000 iziphene/cm²

Ukuqukumbela

Ii-wafers ze-Indium Antimonide (InSb) zizinto eziyimfuneko kuluhlu olubanzi lwezicelo eziphezulu zokusebenza kwimimandla ye-electronics, i-optoelectronics, kunye ne-infrared technologies. Ngokuhamba kwe-electron egqwesileyo, i-low spin-orbit coupling, kunye neendlela ezahlukeneyo zokukhetha i-doping (i-Te yohlobo lwe-N, i-Ge yohlobo lwe-P), ii-wafers ze-InSb zilungele ukusetyenziswa kwizixhobo ezifana ne-infrared detectors, i-high-speed transistors, izixhobo ze-quantum well, kunye nezixhobo ze-spitronic.

Ii-wafers zifumaneka ngokobukhulu obahlukeneyo (i-intshi ezi-2, i-intshi ezi-3, kunye ne-intshi ezi-4), ezinolawulo oluchanekileyo kunye nemigangatho elungele i-epi, eqinisekisa ukuba ziyahlangabezana neemfuno eziqatha zokwenziwa kwanamhlanje kwe-semiconductor. Ezi ziqwenga zilungele usetyenziso kwimimandla efana nokubhaqwa kwe-IR, i-elektroniki enesantya esiphezulu, kunye nemitha ye-THz, evumela ubuchwephesha obuphambili kuphando, ishishini kunye nokhuselo.