HPSI SiCOI wafer 4 6inch Hydropholic Bonding

Inkcazelo emfutshane:

I-High-purity semi-insulating (HPSI) I-4H-SiCOI yafers iphuhliswa ngokusebenzisa i-bonding ephuculweyo kunye ne-thinning technologies. Ii-wafers zenziwe ngokudibanisa i-4H HPSI i-silicon carbide substrates kwi-thermal oxide layers ngeendlela ezimbini eziphambili: i-hydrophilic (ethe ngqo) yokudibanisa kunye ne-surface activated bonding. Le yokugqibela izisa umaleko olungisiweyo ophakathi (njenge-amorphous silicon, i-aluminium oxide, okanye i-titanium oxide) ukuphucula umgangatho webhondi kunye nokunciphisa ama-bubbles, ngokukodwa afanelekileyo kwizicelo ze-optical. Ulawulo olutyebileyo lwe-silicon carbide layer luphunyezwa nge-ion implantation-based SmartCut okanye ukugaya kunye neenkqubo zokupolisha zeCMP. I-SmartCut ibonelela ngobungqingqwa obuchanekileyo obuphezulu (50nm-900nm kunye ± 20nm ukufana) kodwa inokubangela umonakalo omncinci wekristale ngenxa yokufakelwa kwe-ion, echaphazela ukusebenza kwesixhobo sokubona. Ukusila kunye nokupolishwa kwe-CMP kuthintela umonakalo wezinto eziphathekayo kwaye zikhethwa kwiifilimu ezishinyeneyo (350nm–500µm) kunye ne-quantum okanye izicelo zePIC, nangona ubukhulu becala bufanayo (±100nm). Ii-intshi ezi-6 zeewafers ezikumgangatho ophezulu zine-1µm ±0.1µm yeSiC umaleko kwi-3µm SiO2 umaleko ngaphezulu kwe-675µm iisubstrates ze-Si ezinomgangatho okhethekileyo wokugudiseka (Rq <0.2nm). Ezi ziqwenga ze-HPSI SiCOI zilungiselela i-MEMS, i-PIC, i-quantum, kunye nokuveliswa kwesixhobo esibonayo esinomgangatho obalaseleyo wemathiriyeli kunye nokuguquguquka kwenkqubo.

Thumela i-imeyile kuthi

Iimbonakalo

I-SiCOI Wafer (iSilicon Carbide-on-Insulator) Isishwankathelo seePropati

I-SiCOI wafers yi-substrate ye-semiconductor yesizukulwana esitsha edibanisa i-Silicon Carbide (i-SiC) kunye ne-insulating layer, ehlala i-SiO₂ okanye isafire, ukuphucula ukusebenza kumandla ombane, i-RF, kunye ne-photonics. Apha ngezantsi kukho inkcazo ebanzi yeepropathi zabo ezahlulwe ngokwamacandelo aphambili:

Ipropati	Inkcazo
Ukuqulunqwa kwezinto	I-Silicon Carbide (SiC) umaleko obotshelelwe kwi-substrate ekhuselayo (ngokuqhelekileyo i-SiO₂ okanye isafire)
Ulwakhiwo lweCrystal	Ngokuqhelekileyo i-4H okanye i-6H i-polytypes ye-SiC, eyaziwayo ngomgangatho ophezulu we-crystal kunye nokufana
Iipropati zoMbane	Indawo yombane eyophukayo ephezulu (~3 MV/cm), i-bandgap ebanzi (~3.26 eV ye-4H-SiC), ukuvuza okuphantsi kwangoku
I-Thermal Conductivity	I-thermal conductivity ephezulu (~ 300 W/m·K), eyenza ukuchithwa kobushushu okusebenzayo
Uluhlu lweDielectric	I-Insulating layer (i-SiO₂ okanye isafire) ibonelela ngombane wedwa kwaye inciphisa amandla eparasitic
Iipropati zoomatshini	Ukuqina okuphezulu (~ 9 Mohs isikali), amandla abalaseleyo omatshini, kunye nokuzinza kwe-thermal
Umphezulu Gqiba	Ngokuqhelekileyo i-ultra-smooth kunye noxinzelelo oluphantsi lwesiphene, ilungele ukwenziwa kwesixhobo
Usetyenziso	Ii-elektroniki zamandla, izixhobo ze-MEMS, izixhobo zeRF, izinzwa ezifuna ubushushu obuphezulu kunye nokunyamezela kwamandla ombane

Ii-wafers ze-SiCOI (i-Silicon Carbide-on-Insulator) imele ulwakhiwo oluphezulu lwe-semiconductor substrate, olubandakanya umaleko ophakamileyo obhityileyo we-silicon carbide (SiC) edityaniswe kwi-insulating layer, ngokuqhelekileyo isilicon dioxide (SiO₂) okanye isafire. I-Silicon carbide yi-wide-bandgap semiconductor eyaziwa ngokukwazi ukumelana nombane ophezulu kunye namaqondo obushushu aphakamileyo, kunye ne-thermal conductivity egqwesileyo kunye nobunzima obuphezulu bomatshini, iyenza ilungele amandla aphezulu, i-high-frequency, kunye nobushushu obuphezulu bezicelo ze-elektroniki.

Umaleko wokugquma kwii-wafers ze-SiCOI unikezela ukwahlula kombane okusebenzayo, ukunciphisa kakhulu i-parasitic capacitance kunye nokuvuza kwemisinga phakathi kwezixhobo, ngaloo ndlela kuphucula ukusebenza kwesixhobo kunye nokuthembeka. Umphezulu we-wafer ugudiswe ngokuchanekileyo ukuze ufezekiseke kakhulu kwaye uneziphene ezincinci, ukuhlangabezana neemfuno ezingqongqo zokwenziwa kwesixhobo esincinci kunye ne-nano-scale.

Esi sakhiwo sezinto eziphathekayo asiphuculi kuphela iimpawu zombane zezixhobo ze-SiC kodwa ziphucula kakhulu ulawulo lwe-thermal kunye nokuzinza komatshini. Ngenxa yoko, ii-wafers ze-SiCOI zisetyenziswa ngokubanzi kumbane wombane, i-radio frequency (RF) components, i-microelectromechanical systems (MEMS) sensors, kunye nobushushu obuphezulu be-elektroniki. Ngokubanzi, ii-wafers ze-SiCOI zidibanisa iipropathi ezingaqhelekanga ze-silicon carbide kunye neenzuzo zokuhlukaniswa kombane zomaleko we-insulator, ebonelela ngesiseko esifanelekileyo kwisizukulwana esilandelayo sezixhobo zokusebenza eziphezulu ze-semiconductor.

Isicelo seSiCOI wafer

Izixhobo zoMbane zoMbane

Ukutshintsha kwamandla ombane aphezulu kunye namandla aphezulu, ii-MOSFETs, kunye neediode

Zuza kwibhendi ebanzi ye-SiC, amandla ombane aphezulu wokuqhekeka, kunye nokuzinza kwe-thermal

Ukunciphisa ukulahlekelwa kwamandla kunye nokuphucula ukusebenza kakuhle kwiinkqubo zokuguqula amandla

Izixhobo zeRadio Frequency (RF).

Ii-transistors eziphezulu kunye ne-amplifiers

Umthamo we-parasitic ophantsi ngenxa yomaleko wokugquma uphucula ukusebenza kweRF

Ifanelekile kunxibelelwano lwe-5G kunye neenkqubo ze-radar

IiNkqubo zeMicroelectromechanical (MEMS)

Iinzwa kunye nee-actuators ezisebenza kwindawo ezinzima

Ukomelela koomatshini kunye nokungasebenzi kweekhemikhali zandisa ubomi besixhobo

Kubandakanya iinzwa zoxinzelelo, i-accelerometers, kunye ne-gyroscopes

I-Electronics yobushushu obuphezulu

I-elektroniki yezemoto, i-aerospace, kunye nokusetyenziswa kwemizi-mveliso

Sebenza ngokuthembekileyo kumaqondo obushushu aphezulu apho isilicon isilela

Izixhobo zeFotonic

Ukudibanisa kunye namacandelo e-optoelectronic kwii-substrates ze-insulator

Yenza i-on-chip photonics ngolawulo oluphuculweyo lwe-thermal

I-SiCOI wafer's Q&A

Umbuzo:yintoni i-wafer ye-SiCOI

A:I-SiCOI wafer imele iSilicon Carbide-on-Insulator wafer. Luhlobo lwe-substrate ye-semiconductor apho umaleko omncinci we-silicon carbide (SiC) udityaniswe kwi-insulating layer, ngokuqhelekileyo i-silicon dioxide (SiO₂) okanye ngamanye amaxesha isafire. Esi sakhiwo siyafana nengcamango kwii-Silicon-on-Insulator (SOI) eyaziwayo kodwa isebenzisa i-SiC endaweni ye-silicon.