I-HPSI SiCOI wafer eyi-4 6inch Hydropholic Bonding

Inkcazo emfutshane:

Ii-wafer ze-4H-SiCOI ezi-High-purity semi-insulating (HPSI) zenziwe kusetyenziswa ubuchwepheshe obuphambili bokubopha kunye nokunciphisa. Ezi wafer zenziwe nge-bonding 4H HPSI silicon carbide substrates kwi-thermal oxide layers ngeendlela ezimbini eziphambili: i-hydrophilic (ngqo) bonding kunye ne-surface activated bonding. Le yokugqibela ingenisa umaleko oguquliweyo ophakathi (njenge-amorphous silicon, i-aluminium oxide, okanye i-titanium oxide) ukuphucula umgangatho we-bond kunye nokunciphisa amaqamza, ngakumbi afanelekileyo kwi-optical applications. Ulawulo lobukhulu be-silicon carbide layer lufezekiswa nge-ion implantation-based SmartCut okanye i-grinding kunye ne-CMP polishing processes. I-SmartCut inikezela nge-high clearness thickness uniformity (50nm–900nm ene-±20nm uniformity) kodwa inokubangela umonakalo omncinci wekristale ngenxa ye-ion implantation, echaphazela ukusebenza kwesixhobo se-optical. Ukusila kunye ne-CMP polishing ziphepha umonakalo wezinto kwaye zikhethwa kwiifilimu ezityebileyo (350nm–500µm) kunye ne-quantum okanye i-PIC applications, nangona zinobukhulu obuncinci (±100nm). Iiwafers eziqhelekileyo eziziisentimitha ezi-6 zinomgangatho we-1µm ±0.1µm SiC kumaleko we-3µm SiO2 phezu kwee-substrates ze-675µm Si ezinobuthambile obukhethekileyo bomphezulu (Rq < 0.2nm). Ezi wafers ze-HPSI SiCOI zilungele ukwenziwa kwezixhobo ze-MEMS, PIC, quantum, kunye ne-optical ngomgangatho ogqwesileyo wezinto kunye nokuguquguquka kwenkqubo.

Thumela i-imeyile kuthi

Iimbonakalo

Isishwankathelo seempawu zeSiCOI Wafer (Silicon Carbide-on-Insulator)

Ii-wafer ze-SiCOI zizixhobo zesizukulwana esitsha ze-semiconductor ezidibanisa i-Silicon Carbide (SiC) kunye nomaleko wokukhusela, odla ngokuba yi-SiO₂ okanye i-sapphire, ukuphucula ukusebenza kwi-electronics yamandla, i-RF, kunye ne-photonics. Apha ngezantsi kukho isishwankathelo esineenkcukacha seempawu zazo ezihlulwe ngokwamacandelo aphambili:

Ipropati	Inkcazo
Ukwakhiwa kwezinto	Umaleko weSilicon Carbide (SiC) obotshelelwe kwi-substrate yokukhusela (ngesiqhelo iSiO₂ okanye iSapphire)
Ulwakhiwo lwekristale	Ngokwesiqhelo iipolytypes ze-SiC ze-4H okanye ze-6H, ezaziwa ngomgangatho ophezulu wekristale kunye nokufana
Iipropati zoMbane	Intsimi yombane ephukileyo kakhulu (~3 MV/cm), i-bandgap ebanzi (~3.26 eV ye-4H-SiC), umsinga ovuzayo ophantsi
Ukuqhuba kweThermal	Ukuqhuba okuphezulu kobushushu (~300 W/m·K), okuvumela ukusasazwa kobushushu okusebenzayo
Umaleko weDielectric	Umaleko wokuvala umbane (i-SiO₂ okanye i-sapphire) ubonelela ngokwahlulwa kombane kwaye unciphisa amandla e-parasitic
Iipropati zoomatshini	Ubunzima obuphezulu (~9 Mohs scale), amandla abalaseleyo oomatshini, kunye nokuzinza kobushushu
Umphezulu wokugqiba	Ngokwesiqhelo igudileyo kakhulu kwaye inobunzima obuphantsi, ifanelekile ekwenziweni kwesixhobo
Izicelo	Izixhobo ze-elektroniki zamandla, izixhobo ze-MEMS, izixhobo ze-RF, izinzwa ezifuna ukunyamezelana nobushushu obuphezulu kunye ne-voltage

Ii-wafer ze-SiCOI (iSilicon Carbide-on-Insulator) zimele isakhiwo se-semiconductor substrate esiphucukileyo, esenziwe ngumaleko obhityileyo we-silicon carbide (SiC) osemgangathweni ophezulu obotshelelwe kumaleko ogqumayo, ngesiqhelo i-silicon dioxide (SiO₂) okanye i-sapphire. I-Silicon carbide yi-semiconductor ebanzi eyaziwa ngokukwazi kwayo ukumelana nee-voltage eziphezulu kunye namaqondo obushushu aphezulu, kunye nokuqhuba kakuhle kobushushu kunye nobunzima obuphezulu boomatshini, okwenza ukuba ilungele ukusetyenziswa kwe-elektroniki okunamandla aphezulu, okuphindaphindwayo, kunye nobushushu obuphezulu.

Umaleko wokukhusela kwii-wafers zeSiCOI ubonelela ngokwahlukana kombane okusebenzayo, kunciphisa kakhulu amandla e-parasitic kunye nemisinga yokuvuza phakathi kwezixhobo, ngaloo ndlela kuphucula ukusebenza kwesixhobo kunye nokuthembeka kwaso. Umphezulu we-wafer ucoliwe ngokuchanekileyo ukuze ufumane ukugudiswa okukhulu kunye neziphene ezincinci, ukuhlangabezana neemfuno ezingqongqo zokwenza izixhobo ezincinci nezincinci.

Olu lwakhiwo lwezinto aluphuculi nje kuphela iimpawu zombane zezixhobo zeSiC kodwa lukwaphucula kakhulu ulawulo lobushushu kunye nokuzinza koomatshini. Ngenxa yoko, ii-wafer zeSiCOI zisetyenziswa kakhulu kwii-electronics zamandla, izinto zerediyo (RF), ii-sensors zeenkqubo ze-microelectromechanical (MEMS), kunye nee-electronics zobushushu obuphezulu. Ngokubanzi, ii-wafer zeSiCOI zidibanisa iipropati zomzimba ezibalaseleyo ze-silicon carbide kunye neenzuzo zokwahlulwa kombane zomaleko we-insulator, zibonelela ngesiseko esifanelekileyo kwisizukulwana esilandelayo sezixhobo ze-semiconductor ezisebenza kakhulu.

Isicelo se-SiCOI wafer

Izixhobo ze-Elektroniki zamandla

Iiswitshi ze-voltage ephezulu kunye namandla aphezulu, ii-MOSFET, kunye nee-diode

Zuza kwi-bandgap ebanzi yeSiC, i-voltage ephezulu yokuqhekeka, kunye nozinzo lobushushu

Ukuncipha kokulahleka kwamandla kunye nokusebenza kakuhle kwiinkqubo zokuguqula amandla

Izixhobo zeRadio Frequency (RF)

Ii-transistors kunye nee-amplifier ezisebenza rhoqo

Umthamo ophantsi we-parasitic ngenxa yomaleko wokugquma uphucula ukusebenza kwe-RF

Ifanelekile kwiinkqubo zonxibelelwano ze-5G kunye ne-radar

Iinkqubo zeMicroelectromechanical (MEMS)

Izinzwa kunye nee-actuators ezisebenza kwiindawo ezinzima

Ukuqina koomatshini kunye nokungangeni kweekhemikhali kwandisa ubomi besixhobo

Ibandakanya ii-sensors zoxinzelelo, ii-accelerometers, kunye nee-gyroscopes

Izixhobo ze-elektroniki ezishushu kakhulu

Izixhobo ze-elektroniki zeemoto, i-aerospace, kunye nezicelo zemizi-mveliso

Sebenza ngokuthembekileyo kumaqondo obushushu aphezulu apho i-silicon ingaphumeleli khona

Izixhobo zeFotonic

Ukuhlanganiswa kwezinto ze-optoelectronic kwi-insulator substrates

Ivumela i-on-chip photonics ngolawulo oluphuculweyo lobushushu

Imibuzo neempendulo zeSiCOI wafer

Umbuzo:yintoni i-SiCOI wafer

A:I-SiCOI wafer imele i-Silicon Carbide-on-Insulator wafer. Luhlobo lwe-semiconductor substrate apho umaleko omncinci we-silicon carbide (SiC) ubotshelelwa kumaleko okhuselayo, ngesiqhelo i-silicon dioxide (SiO₂) okanye ngamanye amaxesha i-sapphire. Olu lwakhiwo lufana ngokwengcamango nee-Silicon-on-Insulator (SOI) wafers ezaziwayo kodwa zisebenzisa i-SiC endaweni ye-silicon.