I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMbane woMbane

I-HPSI SiC wafer dia:3inch ubukhulu:350um± 25 µm kuMfanekiso oMtsha woMbane woMbane

Inkcazelo emfutshane:

I-HPSI (i-High-Purity Silicon Carbide) i-wafer ye-SiC enobubanzi obuyi-intshi ezi-3 kunye nobukhulu obuyi-350 µm ± 25 µm iyilelwe ngokukodwa usetyenziso lombane wombane odinga ama-substrates asebenza kakhulu. Esi siqwenga se-SiC sibonelela nge-conductivity ephezulu ye-thermal, amandla ombane aphezulu, kunye nokusebenza kakuhle kumaqondo obushushu aphezulu okusebenza, oko kuyenza ibe lolona khetho lufanelekileyo kwimfuno ekhulayo yezixhobo zombane ezisebenza ngamandla kunye namandla aqinileyo. Ii-wafers ze-SiC zifanelekile ngokukodwa kwi-high-voltage, i-high-current, kunye ne-high-frequency applications, apho i-silicon substrates zendabuko zisilela ukuhlangabezana neemfuno zokusebenza.
I-wafer yethu ye-HPSI SiC, eyilwe kusetyenziswa iindlela zamva nje zokukhokela ishishini, iyafumaneka kumabanga aliqela, ngalinye liyilelwe ukuhlangabezana neemfuno ezithile zokwenziwa. I-wafer ibonisa ingqibelelo yesakhiwo esibalaseleyo, iipropati zombane, kunye nomgangatho womphezulu, ukuqinisekisa ukuba unako ukuhambisa ukusebenza okuthembekileyo kwizicelo ezifunwayo, kubandakanywa i-semiconductors yamandla, izithuthi zombane (EVs), iinkqubo zamandla avuselelekayo, kunye nokuguqulwa kwamandla oshishino.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Isicelo

Ii-wafers ze-HPSI SiC zisetyenziswa kuluhlu olubanzi lwezicelo zombane wombane, kubandakanywa:

IiSemiconductors zamandla:Ii-wafers ze-SiC zidla ngokusetyenziswa ekuveliseni ii-diode zamandla, ii-transistors (MOSFETs, IGBTs), kunye ne-thyristors. Ezi semiconductors zisetyenziswa ngokubanzi kwizicelo zoguqulo lwamandla ezifuna ukusebenza kakuhle kunye nokuthembeka, njengokuqhutywa kweemoto zoshishino, izixhobo zombane, kunye nee-inverters zeenkqubo zamandla avuselelekayo.
Izithuthi zoMbane (EVs):Kwiimoto zombane zombane, izixhobo zamandla ezisekelwe kwi-SiC zibonelela ngesantya sokutshintsha ngokukhawuleza, ukusebenza kakuhle kwamandla, kunye nokunciphisa ilahleko yobushushu. Amacandelo e-SiC afanelekile kwizicelo kwiinkqubo zokulawula ibhetri (i-BMS), izibonelelo zokutshaja, kunye neetshaja ezisebhodini (i-OBCs), apho ukunciphisa ubunzima kunye nokwandisa ukuguqulwa kwamandla okusebenza kubalulekile.

IiNkqubo zaMandla aVuselelwayo:Ii-wafers ze-SiC zisetyenziswa kakhulu kwii-inverters zelanga, iijenereyitha ze-injini yomoya, kunye neenkqubo zokugcina amandla, apho ukusebenza okuphezulu kunye nokomelela kubalulekile. Amacandelo asekelwe kwi-SiC anika amandla amandla aphezulu kunye nokusebenza okuphuculweyo kwezi zicelo, ukuphucula ukusebenza kakuhle kokuguqulwa kwamandla.

I-Electronic Power ye-Industrial:Kwizicelo zemizi-mveliso ezisebenza kakhulu, ezinje ngeemoto, iirobhothi, kunye nezixhobo zombane ezinkulu, ukusetyenziswa kwee-wafers ze-SiC kuvumela ukuphuculwa kokusebenza ngokufanelekileyo, ukuthembeka, kunye nolawulo lobushushu. Izixhobo ze-SiC zinokusingatha i-frequency ephezulu yokutshintsha kunye namaqondo okushisa aphezulu, okwenza ukuba afanelekele iindawo ezifunayo.

UNxibelelwano ngoNxibelelwano kunye namaZiko eDatha:I-SiC isetyenziselwa ukubonelela ngombane kwizixhobo zonxibelelwano kunye namaziko edatha, apho ukuthembeka okuphezulu kunye nokuguqulwa kwamandla okusebenzayo kubalulekile. Izixhobo zamandla ezisekelwe kwi-SiC zenza ukusebenza okuphezulu kubukhulu obuncinci, obuguqulela ekunciphiseni ukusetyenziswa kwamandla kunye nokusebenza kakuhle kokupholisa kwiziseko ezinkulu.

Umbane ophezulu wokophuka, ukuxhathisa okuphantsi, kunye nokuhanjiswa kwe-thermal kwe-SiC wafers kuzenza zibe yeyona substrate ifanelekileyo kwezi zicelo zihambele phambili, okwenza uphuhliso lwesizukulwana esilandelayo sombane wamandla ombane awonga amandla.

Iipropati

Ipropati	Ixabiso
I-Wafer Diameter	ii-intshi ezi-3 (76.2 mm)
Ukutyeba kweWafer	350 µm ± 25 µm
Iwafer Orientation	<0001> kwi-axis ± 0.5 °
Uxinaniso lweMibhobho (MPD)	≤ 1 cm⁻²
Ukuxhathisa koMbane	≥ 1E7 Ω·cm
I-Dopant	Ingaguqulwanga
Ukuqhelaniswa neFlethi okuPhambili	{11-20} ± 5.0°
Ubude beFlethi obuPhambili	32.5 mm ± 3.0 mm
Ubude beFlethi yesibini	18.0 mm ± 2.0 mm
Ukuqhelaniswa neFlethi yesibini	Si jonga phezulu: 90° CW ukusuka kwiflethi yokuqala ± 5.0°
Ukungabandakanywa kuMda	3 mm
LTV/TTV/Bow/Warp	3 µm / 10 µm / ±30 µm / 40 µm
Uburhabaxa boMphezulu	Ubuso be-C: bukhazimlisiwe, ubuso beSi: CMP
Iintanda (zihlolwe ngokukhanya okuphezulu)	Akukho nanye
Iipleyiti zeHex (zihlolwe ngokukhanya okuphezulu)	Akukho nanye
Iindawo zePolytype (zihlolwe ngokukhanya okuphezulu)	Indawo eyongezelekayo 5%
Imikrwelo (ihlolwe sisibane sokukhanya okuphezulu)	≤ Imikrwelo emi-5, ubude obuninzi ≤ 150 mm
Edge Chipping	Akukho kuvunyelweyo ≥ 0.5 mm ububanzi nobunzulu
Ungcoliseko loMphezulu (uhlolwe sisibane sobukhulu obuphezulu)	Akukho nanye

IiNzuzo eziPhambili

I-High Thermal Conductivity:Ii-wafers ze-SiC zaziwa ngokukwazi kwazo okukhethekileyo ukutshabalalisa ubushushu, obuvumela izixhobo zamandla ukuba zisebenze ngokufanelekileyo kwaye zibambe imisinga ephezulu ngaphandle kokufudumeza. Olu phawu lubalulekile kumandla ombane apho ulawulo lobushushu luyingxaki enkulu.
Ukwahlulwa kwamandla ombane aphezulu:I-bandgap ebanzi ye-SiC yenza ukuba izixhobo zikwazi ukunyamezela amanqanaba ombane aphezulu, zizenza zilungele usetyenziso olunombane ophezulu onje ngeegridi zamandla, izithuthi zombane, kunye noomatshini bemizi-mveliso.
Ukusebenza okuphezulu:Ukudityaniswa kwee-frequencies eziphezulu zokutshintsha kunye ne-low on-resistance iziphumo kwizixhobo ezinokulahlekelwa kwamandla aphantsi, ukuphucula ukusebenza kakuhle kokuguqulwa kwamandla kunye nokunciphisa imfuno yeenkqubo zokupholisa ezinzima.
Ukuthembeka Kwimekobume Eburhabaxa:I-SiC iyakwazi ukusebenza kumaqondo obushushu aphezulu (ukuya kuthi ga kwi-600 ° C), okwenza ukuba ilungele ukusetyenziswa kwiindawo ezinokuthi zonakalise izixhobo zemveli ze-silicon.
Ugcino lwamandla:Izixhobo zamandla ze-SiC ziphucula ukusebenza kakuhle kokuguqulwa kwamandla, okubaluleke kakhulu ekunciphiseni ukusetyenziswa kwamandla, ngakumbi kwiinkqubo ezinkulu ezifana neziguquli zamandla emizi-mveliso, izithuthi zombane, kunye neziseko zombane ezivuselelwayo.