Ilensi ye-High Purity SiC Optical Cubic 4H-semi 6SP Ubungakanani obulungiselelwe wena

Ilensi ye-High Purity SiC Optical Cubic 4H-semi 6SP Ubungakanani obucwangcisiweyo Umfanekiso obonisiweyo

Inkcazo emfutshane:

Iilensi zeSiC (iilensi ze-silicon carbide optical) ziinxalenye ze-optical ezichanekileyo ezenziwe nge-silicon carbide (SiC) ecocekileyo kakhulu, enika iipropati ze-physicochemical ezibalaseleyo kunye nokusebenza kwe-optical. Zibonakaliswa yi-ultrahigh thermal conductivity (490 W/m·K), i-coefficient ephantsi yokwandiswa kwe-thermal (4.0×10⁻⁶/K), kunye nozinzo olubalaseleyo lokusingqongileyo, iilensi zeSiC ziye zaba lukhetho olufanelekileyo kwiinkqubo ze-optical ezisebenza kwiimeko eziqatha. Ezi lensi zibonisa ukusebenza kakuhle kokudlulisa (uncoated transmittance >70%) kwi-ultraviolet ukuya kwi-far-infrared wavelengths (0.2-6 μm), nto leyo eyenza ukuba zifaneleke ngakumbi kwiinkqubo ze-laser ezinamandla aphezulu, i-space optics, kunye ne-optical imaging kwiindawo zoshishino ezinzima.

Inkqubo yokuvelisa iilensi zeSiC ibandakanya ukugaywa ngokuchanekileyo, ukupholisha ngokuchanekileyo, kunye nonyango olukhethekileyo lokugquma ukuze kufezekiswe iindawo ezibonakalayo ngokuchaneka kwe-nanoscale (uburhabaxa bomphezulu <1 nm). Iijometri ezenziwe ngokwezifiso kuquka iindawo ezingenanto kunye nezakhiwo ezizimeleyo zinokwenziwa ukuze kuhlangatyezwane neemfuno zoyilo lweenkqubo ze-optical ezichanekileyo kakhulu.

Thumela i-imeyile kuthi

Iimbonakalo

Iimpawu zeLensi ye-SiC Optical

1. Ukubaluleka kwezinto eziphathekayo

Ukulungelelana Okugqithisileyo Kwendalo: Iyamelana namaqondo obushushu angaphezulu kwe-1500°C, ukugqwala okunamandla kwe-asidi/alkali, kunye nemitha enamandla aphezulu, ilungele izixhobo zeenqwelo-moya kunye nenyukliya.

Amandla Oomatshini Angaqhelekanga: Ubulukhuni obuphantse bube yidayimani (iiMohs 9.5), amandla okuguquguquka >400 MPa, kunye nokumelana nempembelelo okugqitha kakhulu iglasi yeglasi eqhelekileyo.

Uzinzo lobushushu: Ukuqhuba kobushushu obuphezulu nge-100× kune-silica exutyiweyo, kunye ne-CTE eyi-1/10 yeglasi eqhelekileyo, ukuqinisekisa uzinzo phantsi kokujikeleza kobushushu okukhawulezayo.

2. Iingenelo zokuSebenza ngokuBonakalayo

Ukuhanjiswa kwe-spectral ebanzi (0.2-6 μm); ii-coating ezikhethekileyo zinokuphucula ukuhanjiswa ukuya kuthi ga kwi->95% kwiibhendi ezithile (umz., i-3-5 μm mid-IR).

Ukulahleka okuphantsi kokusasazeka (<0.5%/cm), ukugqitywa komphezulu ukuya kuthi ga kwi-10/5 standard-dig scratch-grab standard, kunye nobuthe tyaba bomphezulu yi-λ/10@633 nm.

Umlinganiselo womonakalo obangelwa yilaser ophezulu (LIDT) >15 J/cm² (1064 nm, 10 ns pulses), ufanelekile kwiinkqubo zokugxila kwelaser ezinamandla aphezulu.

3. Amandla Okusebenza Ngobuchule

Ixhasa iindawo ezintsonkothileyo (ezingenasiphene, ezizimeleyo) ngokuchaneka kwesimo <100 nm PV kunye nokugxila <1 arcmin.

Uyakwazi ukwenza iilensi zeSiC ezinkulu (ububanzi >500 mm) zeeteleskopu zeenkwenkwezi kunye ne-space optics.

Izicelo eziphambili zeLens ye-SiC Optical

1. I-Space Optics kunye noKhuselo

Iilensi zokuva ezikude zesathelayithi kunye ne-space telescope optics, ezisebenzisa iipropati ezilula zeSiC (ubuninzi obuyi-3.21 g/cm³) kunye nokumelana nemisebe.

Iifestile ze-optical ezifuna imijukujelwa, ezifudumeza umoya ngamandla (>1000°C) ngexesha lokubhabha nge-hypersonic.

2. Iinkqubo zeLaser ezinamandla aphezulu

Iilensi zokugxila kwizixhobo zokusika/zokuwelda nge-laser yemizi-mveliso, ezigcina ukuvezwa ixesha elide kwi-laser eziqhubekayo ze-kW-class.

Izinto ezibumba imiqadi kwiinkqubo ze-inertial confinement fusion (ICF), eziqinisekisa ukuhanjiswa ngokuchanekileyo kwelaser enamandla aphezulu.

3. Ukwenziwa kweSemiconductor kunye nePrecision

Ii-substrates zesipili se-SiC ze-EUV lithography optics, ezine-thermal deformation <1 nm phantsi kwe-10 kW/m² heat flux.

Iilensi ze-electromagnetic zezixhobo zokuhlola i-e-beam, zisebenzisa i-SiC's conductivity ukulawula ubushushu obusebenzayo.

4. Uhlolo lweMizi-mveliso kunye neMandla

Iilensi ze-Endoscope zeefeni ezishushu kakhulu (ukusebenza rhoqo kwe-1500°C).

Izixhobo ze-infrared optical zezixhobo zokufaka i-oyile emngxunyeni, ezimelana noxinzelelo lwe-downhole (>100 MPa) kunye ne-corrosive media.

Iingenelo zoKhuphiswano oluPhambili

1. Ubunkokeli obupheleleyo bokusebenza
Iilensi zeSiC zidlula izixhobo zendalo ezibonakalayo (i-fused silica, i-ZnSe) kubushushu/umatshini/ukuzinza kweekhemikhali, kunye neempawu zazo "zokuqhuba okuphezulu + ukwanda okuphantsi" ezisombulula imingeni yokuguquguquka kobushushu kwi-large optics.

2. Ukusebenza kakuhle kweendleko zomjikelo wobomi
Nangona iindleko zokuqala ziphezulu, ubomi benkonzo obude beelensi zeSiC (iglasi eqhelekileyo ye-5-10×) kunye nokusebenza ngaphandle kokugcinwa kunciphisa kakhulu iindleko zobunini (i-TCO).

3. Inkululeko yoYilo
Iinkqubo ze-Reaction-bonded okanye ze-CVD zivumela izakhiwo ze-SiC ezikhaphukhaphu (ii-honeycomb cores), zifezekisa umlinganiselo wokuqina-ubunzima ongenakuthelekiswa nanto.

Amandla eNkonzo ye-XKH

1. Iinkonzo zoKwenziwa ngokwezifiso

Izisombululo eziqala ekupheleni ukuya ekupheleni ukusuka kuyilo lwe-optical (Zemax/Code V simulation) ukuya ekunikezelweni kokugqibela, okuxhasa iindawo ezizimeleyo ze-parabolic ezingenanto/ezingekho kwi-axis.

Iingubo ezikhethekileyo: i-anti-reflection (AR), i-carbon efana nedayimani (LIDT>50 J/cm²), i-ITO eqhubayo, njl.

2. Iinkqubo zoQinisekiso loMgangatho

Izixhobo zeMetrology eziquka ii-interferometer ze-4D kunye neeprofayili zokukhanya okumhlophe eziqinisekisa ukuchaneka komphezulu we-λ/20.

I-QC yenqanaba lezinto: Uhlalutyo lwe-XRD crystallographic orientation kwi-SiC nganye engenanto.

3. Iinkonzo ezongeziweyo

Uhlalutyo lokudibanisa i-thermo-structural coupling (i-ANSYS simulation) ukuze kuqikelelwe ukusebenza.

Uyilo oludibeneyo lokuphucula ulwakhiwo lokufakelwa kwelensi ye-SiC.

Isiphelo

Iilensi zeSiC ziphinda zichaze imida yokusebenza kweenkqubo ze-optical ezichanekileyo kakhulu ngokusebenzisa iimpawu zazo zezinto ezingenakuthelekiswa nanto. Amandla ethu adityaniswe ngokuthe nkqo ekuhlanganiseni izinto zeSiC, umatshini wokulungisa ngokuchanekileyo, kunye novavanyo azisa izisombululo ze-optical eziguqukayo kumacandelo e-aerospace kunye nemveliso ephucukileyo. Ngokuhambela phambili ekukhuleni kwekristale yeSiC, uphuhliso lwexesha elizayo luya kugxila kwi-apertures ezinkulu (>1m) kunye nejometri zomphezulu ezintsonkothileyo (ii-arrays ezikhululekileyo).

Njengomvelisi ophambili wezinto eziphucukileyo ze-optical, i-XKH igxile kwizixhobo ezisebenza kakuhle eziquka i-sapphire, i-silicon carbide (SiC), kunye nee-silicon wafers, ezibonelela ngezisombululo eziqala ekusetyenzisweni kwezinto eziluhlaza ukuya ekugqityweni ngokuchanekileyo. Ubuchule bethu bubandakanya:

1. Ukwenziwa Ngokwezifiso: Ukulungiswa ngokuchanekileyo kwejometri ezintsonkothileyo (ezingenasiphene, ezizimeleyo) ezinokumelana ukuya kuthi ga kwi-±0.001mm

2. Ukuguquguquka kwezinto: Ukucubungula i-sapphire (iifestile ze-UV-IR), i-SiC (i-optics enamandla aphezulu), kunye ne-silicon (IR/micro-optics)

3. Iinkonzo ezongeziweyo ngexabiso:

Iingubo ezingabonisi kukhanya/ezihlala ixesha elide (UV-FIR)

Uqinisekiso lomgangatho oluxhaswa yiMetrology (λ/20 flatness)

Indibano yegumbi lokucoca yezicelo ezinobuthathaka kungcoliseko

Sisebenzela amashishini eenqwelo moya, ii-semiconductor, kunye ne-laser, sidibanisa ubuchule besayensi yezinto eziphathekayo kunye nokuveliswa okuphucukileyo ukuze sinike i-optics ekwaziyo ukumelana neemeko ezinzima ngelixa siphucula ukusebenza kwe-optical.