I-GaN-on-Diamond Wafers 4inch 6inch Iyonke ubukhulu be-epi (micron) 0.6 ~ 2.5 okanye ilungiselelwe usetyenziso oluPhezulu

I-GaN-on-Diamond Wafers 4inch 6inch Iyonke ubukhulu be-epi (micron) 0.6 ~ 2.5 okanye ilungiselelwe i-High-Frequency Application Featured Image

Inkcazelo emfutshane:

I-GaN-on-Diamond wafers sisisombululo sezinto eziphambili ezenzelwe i-high-frequency, high-power, kunye nezicelo eziphezulu, ezidibanisa iipropati eziphawulekayo ze-Gallium Nitride (GaN) kunye nolawulo olukhethekileyo lwe-thermal yeDayimane. Ezi wafers zifumaneka kuzo zombini 4-intshi kunye 6-intshi idayamitha, kunye customizable epi umaleko ubukhulu ukusuka 0.6 ukuya 2.5 microns. Le ndibaniselwano ibonelela ngokuchitha ubushushu obugqwesileyo, ukuphatha amandla aphezulu, kunye nokusebenza okugqwesileyo okuphezulu, izenza zilungele usetyenziso olunje ngeRF zokukhulisa amandla, irada, iinkqubo zonxibelelwano zemicrowave, kunye nezinye izixhobo zombane ezisebenza kakhulu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

Ubungakanani beWafer:
Ifumaneka kwi-4-intshi kunye ne-6-intshi ye-diameters yokuhlanganiswa okuguquguqukayo kwiinkqubo ezahlukeneyo zokuvelisa i-semiconductor.
Iinketho zokwenza ngokwezifiso ezikhoyo kwisayizi ye-wafer, ngokuxhomekeke kwiimfuno zomthengi.

Ukutyeba koMaleko we-Epitaxial:
Uluhlu: 0.6 µm ukuya kwi-2.5 µm, kunye neenketho zobungqingqwa obulungiselelweyo obusekwe kwiimfuno ezithile zosetyenziso.
I-epitaxial layer yenzelwe ukuqinisekisa ukukhula kwekristale ye-GaN ephezulu, kunye nobukhulu obuphuculweyo ukulinganisa amandla, ukuphendula rhoqo, kunye nokulawulwa kwe-thermal.

I-Thermal Conductivity:
Umaleko wedayimani ubonelela ngokugqithiswa kwe-thermal conductivity ephezulu kakhulu malunga ne-2000-2200 W/m·K, iqinisekisa ukutshatyalaliswa kobushushu obusebenzayo kwizixhobo eziphezulu zamandla.

Iinkcazelo ngeempawu ze-GaN:
I-Bandgap ebanzi: I-GaN layer ixhamla kwi-bandgap ebanzi (~ 3.4 eV), evumela ukusebenza kwiindawo ezinzima, i-voltage ephezulu, kunye neemeko eziphezulu zokushisa.
Ukuhamba kwe-Electron: Ukuhamba kwe-electron ephezulu (malunga ne-2000 cm²/V·s), ekhokelela ekutshintsheni okukhawulezileyo kunye nee-frequencies eziphezulu zokusebenza.
I-Voltage High Breakdown Voltage: I-voltage yokutshatyalaliswa kwe-GaN iphezulu kakhulu kunezixhobo eziqhelekileyo ze-semiconductor, iyenza ilungele ukusetyenziswa kwamandla ombane.

Ukusebenza koMbane:
Uxinano lwaMandla aMmandla: I-GaN-on-Diamond wafers yenza amandla ombane aphezulu ngelixa ugcina ifom encinci, ilungele i-amplifiers kunye ne-RF systems.
Ilahleko ephantsi: Indibaniselwano yokusebenza kakuhle kwe-GaN kunye nokutshatyalaliswa kobushushu bedayimani kukhokelela ekulahlekeni okuphantsi kwamandla ngexesha lokusebenza.

Umgangatho womphezulu:
Ukukhula komgangatho ophezulu we-Epitaxial: Umaleko we-GaN ukhuliswe nge-epitaxially kwi-substrate yedayimane, iqinisekisa ukuxinana okuncinci kokuchithwa, umgangatho ophezulu wekristale, kunye nokusebenza kakuhle kwesixhobo.

Ukufana:
Ukutyeba kunye nokuBumba okufanayo: Zombini umaleko we-GaN kunye ne-diamond substrate zigcina ukufana okugqwesileyo, kubalulekile ekusebenzeni okungaguqukiyo kwesixhobo kunye nokuthembeka.

Uzinzo kwiMichiza:
Zombini i-GaN kunye nedayimani zibonelela ngozinzo olukhethekileyo lweekhemikhali, ezivumela ezi ziphaluka ukuba zisebenze ngokuthembekileyo kwiindawo ezirhabaxa zekhemikhali.

Usetyenziso

I-RF Power Amplifiers:
Ii-wafers ze-GaN-on-Diamond zifanelekile kwizikhulisi zamandla e-RF kunxibelelwano lwe-telecommunications, iisistim zeradar, kunye nonxibelelwano lwesathelayithi, zibonelela ngokusebenza okuphezulu kunye nokuthembeka kumaza aphezulu (umzekelo, i-2 GHz ukuya kuma-20 GHz nangaphaya).

Unxibelelwano lweMicrowave:
Ezi wafers zigqwesa kwiinkqubo zonxibelelwano ze-microwave, apho ukukhutshwa kwamandla aphezulu kunye nokuthotywa kwesignali encinci kubalulekile.

Ubuchwephesha beRadar kunye neSensing Technologies:
Ii-wafers ze-GaN-on-Diamond zisetyenziswa ngokubanzi kwiinkqubo ze-radar, zibonelela ngokusebenza okuqinileyo kwi-high-frequency kunye nezicelo zamandla aphezulu, ngokukodwa kumacandelo omkhosi, i-automotive, kunye ne-aerospace.

Iinkqubo zesathelayithi:
Kwiinkqubo zonxibelelwano lwesathelayithi, ezi ziqwenga ziqinisekisa ukuqina kunye nokusebenza okuphezulu kweamplifiers zamandla, ezikwaziyo ukusebenza kwiimeko ezinzima zokusingqongileyo.

I-Electronics enamandla amakhulu:
Izakhono zolawulo lwe-thermal ye-GaN-on-Diamond zibenza bafaneleke kumbane wamandla aphezulu, njengabaguquli bamandla, i-inverters, kunye ne-slid-state relays.

IiNkqubo zoLawulo lweThermal:
Ngenxa ye-thermal conductivity ephezulu yedayimani, ezi ziqwenga zinokusetyenziswa kwizicelo ezifuna ulawulo oluqinileyo lwe-thermal, njenge-LED enamandla amakhulu kunye neenkqubo ze-laser.

I-Q&A ye-GaN-on-Diamond Wafers

I-Q1: Yintoni inzuzo yokusebenzisa i-GaN-on-Diamond wafers kwizicelo eziphezulu ze-frequency?

A1:Ii-wafers ze-GaN-on-Diamond zidibanisa ukuhamba kwe-electron ephezulu kunye ne-bandap ebanzi ye-GaN kunye ne-thermal conductivity ebalaseleyo yedayimani. Oku kwenza ukuba izixhobo eziphezulu ze-frequency zisebenze kumanqanaba aphezulu ombane ngelixa zilawula ngokufanelekileyo ukushisa, ziqinisekisa ukusebenza kakuhle kunye nokuthembeka xa kuthelekiswa nezinto eziqhelekileyo.

I-Q2: Ngaba ii-wafers ze-GaN-on-Diamond zingenziwa ngokwezifiso zamandla athile kunye neemfuno zefrikhwensi?

A2:Ewe, ii-wafers ze-GaN-on-Diamond zibonelela ngeendlela ezinokwenziwa ngokwezifiso, kubandakanywa ubukhulu be-epitaxial layer (0.6 µm ukuya kwi-2.5 µm), ubukhulu be-wafer (4-intshi, i-intshi eyi-6), kunye nezinye iiparamitha ezisekelwe kwiimfuno ezithile zesicelo, ukubonelela ngokuguquguquka kwamandla aphezulu kunye nosetyenziso oluqhelekileyo.

I-Q3: Ziziphi iingenelo eziphambili zedayimani njenge-substrate ye-GaN?

A3:I-Diamond yokugqithiswa kwe-thermal conductivity (ukuya kwi-2200 W / m · K) inceda ngokufanelekileyo ukukhupha ubushushu obuveliswa zizixhobo eziphezulu ze-GaN. Esi sikhundla solawulo lwe-thermal sivumela izixhobo ze-GaN-on-Diamond ukuba zisebenze kumandla aphezulu oxinaniso kunye nee-frequencies, ukuqinisekisa ukusebenza okuphuculweyo kwesixhobo kunye nokuphila ixesha elide.

I-Q4: Ngaba ii-wafers ze-GaN-on-Diamond zifanelekile kwi-space okanye izicelo ze-aerospace?

A4:Ewe, ii-wafers ze-GaN-on-Diamond zifaneleke kakuhle kwi-space kunye nezicelo ze-aerospace ngenxa yokuthembeka kwazo okuphezulu, amandla okulawula i-thermal, kunye nokusebenza kwiimeko ezinzima, ezifana nemitha ephezulu, ukuhluka kweqondo lokushisa, kunye nokusebenza okuphezulu.

I-Q5: Yintoni ubude obulindelekileyo bezixhobo ezenziwe kwi-GaN-on-Diamond wafers?

A5:Indibaniselwano yokuqina kwe-GaN yendalo kunye neempawu zedayimani ezikhethekileyo zokuphelisa ubushushu zikhokelela kubomi obude bezixhobo. Izixhobo ze-GaN-on-Diamond zenzelwe ukusebenza kwiindawo ezinzima kunye neemeko zamandla aphezulu kunye nokuthotywa okuncinci ngexesha.

I-Q6: I-thermal conductivity yedayimane ichaphazela njani ukusebenza ngokubanzi kwee-wafers ze-GaN-on-Diamond?

A6:I-thermal conductivity ephezulu yedayimani idlala indima ebalulekileyo ekwandiseni ukusebenza kwee-wafers ze-GaN-on-Diamond ngokuhambisa ngokufanelekileyo ubushushu obuveliswe kwizicelo zamandla aphezulu. Oku kuqinisekisa ukuba izixhobo ze-GaN zigcina ukusebenza kakuhle, ukunciphisa uxinzelelo lwe-thermal, kwaye zigweme ukufudumala, okuwumngeni oqhelekileyo kwizixhobo eziqhelekileyo ze-semiconductor.

I-Q7: Ziziphi izicelo eziqhelekileyo apho ii-wafers ze-GaN-on-Diamond zidlula ezinye izinto ze-semiconductor?

A7:Ii-wafers ze-GaN-on-Diamond zisebenza ngaphezu kwezinye izinto kwizicelo ezifuna ukuphathwa kwamandla aphezulu, ukusebenza kwe-high-frequency, kunye nolawulo olusebenzayo lwe-thermal. Oku kuquka ii-amplifiers zeRF, iinkqubo zerada, unxibelelwano ngemicrowave, unxibelelwano ngesathelayithi, kunye nezinye izixhobo zombane eziphezulu.

Ukuqukumbela

I-GaN-on-Diamond wafers inikezela ngesisombululo esisodwa kwi-high-frequency kunye nezicelo zamandla aphezulu, ukudibanisa ukusebenza okuphezulu kwe-GaN kunye neempawu ezikhethekileyo ze-thermal zedayimani. Ngeempawu ezinokwenziwa ngokwezifiso, zenzelwe ukuhlangabezana neemfuno zamashishini afuna ukunikezelwa kwamandla ngokufanelekileyo, ulawulo lwe-thermal, kunye nokusebenza okuphezulu-frequency, ukuqinisekisa ukuthembeka kunye nokuphila ixesha elide kwiindawo ezinzima.