IiWafers zeGaN-on-Diamond 4inch 6inch Ubukhulu be-epi iyonke (micron) 0.6 ~ 2.5 okanye ezenzelwe usetyenziso oluQhelekileyo
Iipropati
Ubungakanani beWafer:
Ifumaneka ngobubanzi obuziisentimitha ezi-4 kunye neesentimitha ezi-6 ukuze idityaniswe ngeendlela ezahlukeneyo kwiinkqubo ezahlukeneyo zokuvelisa ii-semiconductor.
Iindlela zokwenza ngokwezifiso ziyafumaneka ngobukhulu be-wafer, kuxhomekeke kwiimfuno zabathengi.
Ubukhulu beLeya ye-Epitaxial:
Uluhlu: 0.6 µm ukuya kwi-2.5 µm, kunye neendlela zokukhetha ubukhulu obulungiselelwe wena ngokusekelwe kwiimfuno ezithile zokusetyenziswa.
Umaleko we-epitaxial wenzelwe ukuqinisekisa ukukhula kwekristale ye-GaN ekumgangatho ophezulu, enobukhulu obulungelelanisiweyo bokulinganisela amandla, impendulo yamaza, kunye nolawulo lobushushu.
Ukuqhuba kwe-Thermal:
Umaleko wedayimani unika umbane ophezulu kakhulu omalunga ne-2000-2200 W/m·K, oqinisekisa ukusasazwa kobushushu ngokufanelekileyo kwizixhobo ezinamandla aphezulu.
Iipropati zezinto zeGaN:
I-Wide Bandgap: Umaleko we-GaN uxhamla kwi-wide bandgap (~3.4 eV), evumela ukusebenza kwiindawo ezinzima, i-voltage ephezulu, kunye neemeko zobushushu obuphezulu.
Ukuhamba kwe-Electron: Ukuhamba kwe-electron okuphezulu (malunga ne-2000 cm²/V·s), okukhokelela ekutshintsheni ngokukhawuleza kunye namaza aphezulu okusebenza.
I-Voltage Ephezulu Yokuqhekeka: I-voltage yokuqhekeka kwe-GaN iphezulu kakhulu kunezixhobo ze-semiconductor eziqhelekileyo, nto leyo eyenza ukuba ifaneleke kwizicelo ezisebenzisa amandla amaninzi.
Ukusebenza koMbane:
Uxinano lwaMandla aphezulu: Ii-wafer zeGaN-on-Diamond zivumela amandla aphezulu okukhupha ngelixa zigcina imo encinci, zilungele ii-amplifiers zamandla kunye neenkqubo zeRF.
Ilahleko Eliphantsi: Ukudibana kokusebenza kakuhle kweGaN kunye nokuchithwa kobushushu bedayimani kukhokelela ekulahlekeni kwamandla okuphantsi ngexesha lokusebenza.
Umgangatho womphezulu:
Ukukhula kwe-Epitaxial esemgangathweni ophezulu: Umaleko we-GaN ukhuliswa kwi-epitaxial kwi-substrate yedayimani, ukuqinisekisa ukuba akukho xinano luninzi, umgangatho ophezulu wekristale, kunye nokusebenza kakuhle kwesixhobo.
Ukufana:
Ubukhulu kunye nokuHlanganisa: Zombini umaleko weGaN kunye ne-diamond substrate zigcina ukufana okugqwesileyo, kubalulekile ekusebenzeni kakuhle kwesixhobo kunye nokuthembeka.
Uzinzo lweeKhemikhali:
Zombini iGaN kunye nedayimani zibonelela ngozinzo olukhethekileyo lweekhemikhali, nto leyo evumela ezi wafers ukuba zisebenze ngokuthembekileyo kwiindawo ezinoburhabaxa beekhemikhali.
Izicelo
Ii-RF Power Amplifiers:
Ii-wafer zeGaN-on-Diamond zilungele ii-RF power amplifiers kunxibelelwano, kwiinkqubo ze-radar, kunye nonxibelelwano lwesathelayithi, zibonelela ngokusebenza kakuhle nangokuthembekileyo kwi-frequency ephezulu (umz., 2 GHz ukuya kwi-20 GHz nangaphezulu).
Unxibelelwano lweMicrowave:
Ezi wafers zibalaseleyo kwiinkqubo zonxibelelwano lwe-microwave, apho amandla aphezulu kunye nokuwohloka okuncinci kwesignali kubaluleke kakhulu.
Iitekhnoloji zeRadar kunye neSensing:
Ii-wafer zeGaN-on-Diamond zisetyenziswa kakhulu kwiinkqubo ze-radar, zibonelela ngokusebenza kakuhle kwizicelo ezisebenza rhoqo nezinamandla aphezulu, ingakumbi kumacandelo omkhosi, eemoto, kunye neenqwelo-moya.
Iinkqubo zeSathelayithi:
Kwiinkqubo zonxibelelwano lwesathelayithi, ezi wafers ziqinisekisa ukuqina nokusebenza okuphezulu kwee-amplifiers zamandla, ezikwaziyo ukusebenza kwiimeko ezimandundu zendalo.
Izixhobo ze-elektroniki ezinamandla aphezulu:
Amandla okulawula ubushushu eGaN-on-Diamond ayenza ifaneleke kwii-elektroniki ezinamandla aphezulu, ezinje ngee-power converters, ii-inverters, kunye nee-solid-state relays.
Iinkqubo zoLawulo loBushushu:
Ngenxa yokuba idayimani ikwazi ukuqhuba ubushushu obuphezulu, ezi wafers zingasetyenziswa kwizicelo ezifuna ulawulo oluqinileyo lobushushu, njengeenkqubo ze-LED ezinamandla aphezulu kunye ne-laser.
Imibuzo neempendulo zeeWafers zeGaN-on-Diamond
Umbuzo 1: Yintoni inzuzo yokusebenzisa ii-wafers zeGaN-on-Diamond kwizicelo ezisetyenziswa rhoqo?
A1:Ii-wafer zeGaN-on-Diamond zidibanisa ukuhamba okuphezulu kwee-electron kunye ne-bandgap ebanzi yeGaN kunye nokuhanjiswa okugqwesileyo kobushushu bedayimani. Oku kwenza izixhobo ezisebenzisa i-frequency ephezulu zisebenze kumanqanaba aphezulu amandla ngelixa zilawula ubushushu ngokufanelekileyo, ziqinisekisa ukusebenza kakuhle kunye nokuthembeka okukhulu xa kuthelekiswa nezixhobo zemveli.
Umbuzo 2: Ngaba ii-wafers zeGaN-on-Diamond zingenziwa ngokwezifiso ngokweemfuno ezithile zamandla kunye neefrequency?
A2:Ewe, ii-wafer zeGaN-on-Diamond zibonelela ngeendlela ezinokwenziwa ngokwezifiso, kubandakanya ubukhulu be-epitaxial layer (0.6 µm ukuya kwi-2.5 µm), ubungakanani be-wafer (4-intshi, 6-intshi), kunye nezinye iiparameter ezisekelwe kwiimfuno ezithile zesicelo, ezibonelela ngokuguquguquka kwezicelo ezinamandla aphezulu kunye ne-high-frequency.
Umbuzo 3: Zeziphi izibonelelo eziphambili zedayimani njengesiseko seGaN?
A3:Ukuqhuba okugqithisileyo kobushushu beDiamond (ukuya kuthi ga kwi-2200 W/m·K) kunceda ekususeni ubushushu obuveliswa zizixhobo zeGaN ezinamandla aphezulu. Olu buchule bokulawula ubushushu buvumela izixhobo zeGaN-on-Diamond ukuba zisebenze ngamandla aphezulu kunye namaza aphezulu, ukuqinisekisa ukusebenza ngcono kwesixhobo kunye nobude bexesha.
Umbuzo 4: Ngaba ii-wafers zeGaN-on-Diamond zifanelekile ukusetyenziswa kwindawo okanye kwi-aerospace?
A4:Ewe, ii-wafers zeGaN-on-Diamond zilungele ukusetyenziswa kwindawo nakwi-aerospace ngenxa yokuthembeka kwazo okuphezulu, amandla okulawula ubushushu, kunye nokusebenza kwiimeko eziqatha, ezifana nemitha ephezulu, ukutshintsha kobushushu, kunye nokusebenza rhoqo.
Umbuzo 5: Ingakanani ixesha elilindelekileyo lezixhobo ezenziwe ngee-wafers zeGaN-on-Diamond?
A5:Ukudibana kokuqina kweGaN kunye neempawu zedayimani zokusasaza ubushushu ezibalaseleyo kubangela ukuba izixhobo zihlale ixesha elide. Izixhobo zeGaN-on-Diamond zenzelwe ukusebenza kwiindawo ezinzima kunye neemeko zamandla aphezulu kunye nokonakala okuncinci ngokuhamba kwexesha.
Umbuzo 6: Ukuqhuba kwedayimani ngobushushu kuyichaphazela njani indlela esebenza ngayo yonke i-GaN-on-Diamond wafers?
A6:Ukuqhuba okuphezulu kobushushu bedayimani kudlala indima ebalulekileyo ekuphuculeni ukusebenza kwee-wafers zeGaN-on-Diamond ngokulawula ngokufanelekileyo ubushushu obuveliswa kwizicelo zamandla aphezulu. Oku kuqinisekisa ukuba izixhobo zeGaN zigcina ukusebenza okuphezulu, zinciphisa uxinzelelo lobushushu, kwaye ziphephe ukugqithisa kakhulu, nto leyo eyingxaki eqhelekileyo kwizixhobo ze-semiconductor eziqhelekileyo.
Umbuzo 7: Zeziphi iindlela eziqhelekileyo zokusetyenziswa apho ii-wafers zeGaN-on-Diamond zisebenza ngcono kunezinye izixhobo ze-semiconductor?
A7:Ii-wafer zeGaN-on-Diamond zisebenza ngcono kunezinye izixhobo kwizicelo ezifuna ukuphathwa kwamandla aphezulu, ukusebenza rhoqo, kunye nolawulo olusebenzayo lobushushu. Oku kuquka ii-amplifiers zamandla e-RF, iinkqubo ze-radar, unxibelelwano lwe-microwave, unxibelelwano lwesathelayithi, kunye nezinye izixhobo ze-elektroniki ezinamandla aphezulu.
Isiphelo
Iiwafer zeGaN-on-Diamond zibonelela ngesisombululo esahlukileyo kwizicelo ezisebenzisa imitha ephezulu kunye namandla aphezulu, zidibanisa ukusebenza okuphezulu kweGaN kunye neempawu ezibalaseleyo zobushushu bedayimani. Ngeempawu ezinokwenziwa ngokwezifiso, zenzelwe ukuhlangabezana neemfuno zamashishini afuna ukuhanjiswa kombane ngokufanelekileyo, ulawulo lobushushu, kunye nokusebenza kwemitha ephezulu, ukuqinisekisa ukuthembeka kunye nobude bexesha kwiindawo ezinzima.
Umzobo oneenkcukacha
