IGallium Nitride kwiSilicon wafer 4inch 6inch ezilungiselelwe iSi Substrate Orientation, Resistivity, kunye noN-type/P-type Options
Iimbonakalo
●Ibhendi ebanzi:I-GaN (3.4 eV) ibonelela ngophuculo olubonakalayo kwi-high-frequency, amandla aphezulu, kunye nokusebenza kobushushu obuphezulu xa kuthelekiswa nesilicon yakudala, iyenza ilungele izixhobo zamandla kunye ne-RF amplifiers.
●Uqhelaniso lweSi substrate ngokwezifiso:Khetha kwiindlela ezahlukeneyo ze-Si substrate ezifana <111>, <100>, kunye nezinye ukuhambelana neemfuno zesixhobo esithile.
● Ukuxhathisa okulungiselelweyo:Khetha phakathi kweenketho ezahlukeneyo zokuxhathisa kwi-Si, ukusuka kwi-semi-insulating ukuya kwi-high-resistivity kunye ne-low-resistivity yokuphucula ukusebenza kwesixhobo.
● Uhlobo lweDoping:Ifumaneka kuhlobo lwe-N okanye i-P-uhlobo lwe-doping ukuhambelana neemfuno zezixhobo zamandla, ii-RF transistors, okanye ii-LEDs.
●Umbane oPhezulu wokuCalula:Ii-wafers ze-GaN-on-Si zine-voltage ephezulu yokuphuka (ukuya kwi-1200V), evumela ukuba baphathe izicelo eziphezulu zombane.
●Izantya zokuTshintsho oluKhawulezayo:I-GaN inokuhamba kwe-electron ephezulu kunye neelahleko ezisezantsi zokutshintsha kune-silicon, okwenza ii-wafers ze-GaN-on-Si zilungele iisekethe ezinesantya esiphezulu.
●Ukwenziwa kweThermal eyongeziweyo:Ngaphandle kwe-thermal conductivity ephantsi ye-silicon, i-GaN-on-Si isabonelela ngokuzinza okuphezulu kwe-thermal, kunye nokutshatyalaliswa kobushushu obungcono kunezixhobo ze-silicon zendabuko.
IiNgcaciso zobuGcisa
| Ipharamitha | Ixabiso |
| Ubungakanani beWafer | 4-intshi, 6-intshi |
| Si Substrate Orientation | <111>, <100>, ngokwesiko |
| Si Resistivity | High-resistivity, Semi-insulating, Low-resistivity |
| Uhlobo lweDoping | N-uhlobo, P-uhlobo |
| GaN Layer Ukutyeba | 100 nm – 5000 nm (customizable) |
| I-AlGaN Barrier Layer | 24% - 28% Al (eqhelekileyo 10-20 nm) |
| Ukuqhekeka kweVoltage | 600V - 1200V |
| Ukuhamba kwe-Elektroni | 2000 cm²/V·s |
| Ukutshintsha iFrequency | Ukuya kuthi ga kwi-18 GHz |
| Uburhabaxa boMphezulu weWafer | RMS ~0.25 nm (AFM) |
| Ukuchasa iPhepha leGaN | 437.9 Ω·cm² |
| Iyonke iWafer Warp | < 25 µm (ubuninzi) |
| I-Thermal Conductivity | 1.3 – 2.1 W/cm·K |
Usetyenziso
I-Electronics yamandla: I-GaN-on-Si ilungele i-electronics yamandla njengama-amplifiers amandla, abaguquli, kunye nee-inverters ezisetyenziswa kwiinkqubo zamandla avuselelekayo, izithuthi zombane (EVs), kunye nezixhobo zoshishino. I-voltage ephezulu yokuqhekeka kunye nokumelana okuphantsi kuqinisekisa ukuguqulwa kwamandla okusebenzayo, nakwizicelo zamandla aphezulu.
Unxibelelwano lweRF kunye neMicrowave: Ii-wafers ze-GaN-on-Si zibonelela ngezakhono zokujikeleza okuphezulu, zizenza zigqibelele kwi-RF amplifiers, unxibelelwano lwesathelayithi, iinkqubo zeradar, kunye nobuchwepheshe be-5G. Ngezantya eziphezulu zokutshintsha kunye nokukwazi ukusebenza kwiifrikhwensi eziphezulu (ukuya kuthi ga18 GHz), izixhobo ze-GaN zibonelela ngokusebenza okuphezulu kwezi zicelo.
I-Electronics yeemoto: I-GaN-on-Si isetyenziswe kwiinkqubo zamandla emoto, kuqukaiitshaja ezisebhodini (OBCs)kwayeIziguquli zeDC-DC. Ukukwazi kwayo ukusebenza kumaqondo obushushu aphezulu kunye nokumelana namanqanaba aphezulu ombane kuyenza ilungele usetyenziso lwezithuthi zombane ezifuna uguqulo lwamandla aqinileyo.
I-LED kunye ne-Optoelectronics: I-GaN yimpahla yokuzikhethela ii-LED eziluhlaza namhlophe. Ii-wafers ze-GaN-on-Si zisetyenziselwa ukuvelisa iinkqubo eziphezulu zokukhanyisa i-LED, ukubonelela ngokusebenza okugqwesileyo ekukhanyeni, ubugcisa bokubonisa, kunye nonxibelelwano lwe-optical.
Q&A
I-Q1: Yintoni inzuzo ye-GaN ngaphezu kwe-silicon kwizixhobo zombane?
A1:I-GaN ine-aibhendi ebanzi (3.4 eV)kunesilicon (1.1 eV), eyivumela ukuba imelane nombane ophezulu kunye namaqondo obushushu. Le propati yenza i-GaN ikwazi ukuphatha izicelo zamandla aphezulu ngokufanelekileyo, ukunciphisa ukulahlekelwa kwamandla kunye nokwandisa ukusebenza kwenkqubo. I-GaN ikwabonelela ngezantya ezikhawulezayo zokutshintsha, eziyimfuneko kwizixhobo ezisebenza ngamaza aphezulu anjengee-amplifiers zeRF kunye neziguquli zamandla.
Q2: Ngaba ndingenza ngokwezifiso iSi substrate yokuqhelaniswa nesicelo sam?
A2:Ewe, sinikezelaulungelelwaniso lweSi substratenjenge<111>, <100>, kunye nolunye uqhelaniso ngokuxhomekeke kwiimfuno zesixhobo sakho. I-orientation ye-substrate ye-Si idlala indima ephambili ekusebenzeni kwesixhobo, kubandakanywa neempawu zombane, ukuziphatha kwe-thermal, kunye nokuzinza komatshini.
I-Q3: Ziziphi iingenelo zokusebenzisa ii-wafers ze-GaN-on-Si kwizicelo eziphezulu ze-frequency?
A3:GaN-on-Si wafers zinika eliphezuluisantya sokutshintsha, eyenza ukusebenza ngokukhawuleza kwiifrikhwensi eziphezulu xa kuthelekiswa nesilicon. Oku kubenza balungeleRFkwayei-microwaveizicelo, ngokunjalo high-frequencyizixhobo zamandlanjengeIiHEMTs(Ii-Electron Mobility Transistors eziPhezulu) kunyeIzandisi zeRF. Ukuhamba kwe-electron ephezulu ye-GaN kukwakhokelela kwilahleko ephantsi yokutshintsha kunye nokuphucula ukusebenza kakuhle.
I-Q4: Ziziphi iinketho ze-doping ezikhoyo kwii-wafers ze-GaN-on-Si?
A4:Sinikezela zombiniN-uhlobokwayeUhlobo lwePiinketho doping, eziqhele ukusetyenziswa iintlobo ezahlukeneyo izixhobo semiconductor.N-uhlobo lwedopingilungeletransistors amandlakwayeIzandisi zeRF, ngelixaP-uhlobo dopingihlala isetyenziselwa izixhobo ze-optoelectronic ezifana ne-LEDs.
Ukuqukumbela
I-Gallium Nitride yethu eyenziwe ngokwezifiso kwii-Silicon (i-GaN-on-Si) iiWafers zibonelela ngesisombululo esifanelekileyo se-high-frequency, high-power, kunye ne-high-temperature applications. Ngokuqhelaniswa ne-Si substrate enokwenziwa ngokwezifiso, ukuxhathisa, kunye nohlobo lwe-N/P-uhlobo lwedoping, ezi wafers zilungiselelwe ukuhlangabezana neemfuno ezithile zamashishini ukusuka kumbane we-elektroniki kunye neenkqubo zeemoto ukuya kunxibelelwano lweRF kunye nobuchwepheshe be-LED. Ukusebenzisa iipropathi eziphezulu ze-GaN kunye nobukhulu be-silicon, ezi ziqwenga zibonelela ngokusebenza okuphuculweyo, ukusebenza kakuhle, kunye nobungqina bexesha elizayo bezixhobo zesizukulwana esilandelayo.
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