IGallium Nitride (GaN) Epitaxial Ikhuliswe kwiSapphire Wafers 4inch 6inch yeMEMS

Inkcazelo emfutshane:

I-Gallium Nitride (i-GaN) kwii-wafers ze-Sapphire inikeza ukusebenza okungafaniyo kwi-high-frequency kunye nezicelo zamandla aphezulu, okwenza kube yinto efanelekileyo ye-RF (i-Radio Frequency) yesizukulwana esilandelayo kwiimodyuli zangaphambili, izibane ze-LED, kunye nezinye izixhobo ze-semiconductor.GaNiimpawu zombane eziphezulu, ukuquka i-bandgap ephezulu, iyivumela ukuba isebenze kumandla ombane aphezulu wokuqhekeka kunye namaqondo obushushu kunezixhobo zemveli ezisekwe kwisilicon. Njengoko i-GaN isanda yamkelwa ngaphezulu kwe-silicon, iqhubela phambili phambili kwizinto zombane ezifuna izinto ezikhaphukhaphu, ezinamandla, kunye nezisebenzayo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati ze-GaN kwi-Sapphire Wafers

● Ukusebenza okuphezulu:Izixhobo ezisekelwe kwi-GaN zibonelela ngamandla aphindwe kahlanu kunezixhobo ezisekelwe kwi-silicon, ukuphucula ukusebenza kwiinkqubo ezahlukeneyo ze-elektroniki, kuquka i-RF amplification kunye ne-optoelectronics.
●Ibhendi ebanzi:I-bandgap ebanzi ye-GaN yenza ukuba ukusebenza kakuhle okuphezulu kumaqondo obushushu aphakamileyo, iyenze ilungele ukusetyenziswa kwamandla aphezulu kunye ne-high-frequency applications.
●Ukuqina:Ikhono le-GaN lokusingatha iimeko ezinzima (ukushisa okuphezulu kunye nemitha) iqinisekisa ukusebenza okuhlala ixesha elide kwiindawo ezinzima.
● Ubungakanani obuncinci:I-GaN ivumela ukuveliswa kwezixhobo ezihlangeneyo kunye nezikhaphukhaphu xa kuthelekiswa nezinto zemveli ze-semiconductor, ukuququzelela ii-elektroniki ezincinci kunye ezinamandla ngakumbi.

Abstract

I-Gallium Nitride (i-GaN) ivela njenge-semiconductor yokukhethwa kwezicelo eziphezulu ezifuna amandla aphezulu kunye nokusebenza kakuhle, njengeemodyuli ze-RF zangaphambili, iinkqubo zonxibelelwano olukhawulezayo, kunye nokukhanya kwe-LED. I-GaN epitaxial wafers, xa ikhuliswe kwi-sapphire substrates, ibonelela ngendibaniselwano ye-thermal conductivity ephezulu, i-high breakdown voltage, kunye ne-wide frequency response, eyona nto ingundoqo ekusebenzeni kakuhle kwizixhobo zonxibelelwano ezingenazingcingo, iirada, kunye neejammers. Ezi wafers ziyafumaneka kuzo zombini ii-intshi ezi-4 kunye ne-6-intshi ububanzi, ezinobunzima beGaN obahlukeneyo ukuhlangabezana neemfuno zobugcisa ezahlukeneyo. Iipropati ezizodwa ze-GaN ziyenza ibe ngumgqatswa ophambili kwikamva le-elektroniki yamandla.

Iiparamitha zeMveliso

Product Feature	Inkcazo
I-Wafer Diameter	50mm, 100mm, 50.8mm
ISubstrate	Isafire
GaN Layer Ukutyeba	0.5 μm - 10 μm
Uhlobo lweGaN/Doping	Udidi lwe-N (uhlobo lwe-P luyafumaneka xa uceliwe)
GaN Crystal Orientation	<0001>
Uhlobo Lokugudisa	Icala Elinye Likhazimlisiwe (SSP), Icala-Kabini likhazimlisiwe (DSP)
Al2O3 Ukutyeba	430 μm - 650 μm
I-TTV (Ukwahluka koButyebe bubonke)	≤ 10 μm
Ukuqubuda	≤ 10 μm
I-Wap	≤ 10 μm
Indawo engaphezulu	Indawo eSetyenzwayo yoMphezulu > 90%

Q&A

I-Q1: Ziziphi iingenelo eziphambili zokusebenzisa i-GaN ngaphezu kwee-semiconductors ezisekelwe kwi-silicon?

A1: I-GaN ibonelela ngeenzuzo ezininzi ezibalulekileyo ngaphezu kwe-silicon, kubandakanywa i-bandgap ebanzi, eyivumela ukuba iphathe i-voltage ephezulu yokuphuka kwaye isebenze ngokufanelekileyo kumaqondo aphezulu. Oku kwenza i-GaN ilungele amandla aphezulu, usetyenziso olusebenza rhoqo njengemodyuli zeRF, ii-amplifiers zamandla, kunye nee-LED. Ukukwazi kwe-GaN ukuphatha uxinaniso lwamandla aphezulu kukwavumela izixhobo ezincinci kunye nezisebenzayo ngakumbi xa kuthelekiswa nezinye izinto ezise-silicon.

I-Q2: Ngaba i-GaN kwi-Sapphire wafers inokusetyenziswa kwi-MEMS (iMicro-Electro-Mechanical Systems) izicelo?

A2: Ewe, i-GaN kwi-Sapphire wafers ifanelekile kwizicelo ze-MEMS, ngakumbi apho amandla aphezulu, ukuzinza kweqondo lokushisa, kunye nengxolo ephantsi kufuneka. Ukomelela kwemathiriyeli kunye nokusebenza kakuhle kwiindawo ezikwi-frequency ephezulu kuyenza ilungele izixhobo ze-MEMS ezisetyenziswa kunxibelelwano olungenazingcingo, ukuva, kunye neenkqubo zeradar.

I-Q3: Zeziphi izicelo ezinokubakho ze-GaN kunxibelelwano olungenazingcingo?

A3: I-GaN isetyenziswa ngokubanzi kwiimodyuli ze-RF zangaphambili zokunxibelelana ngaphandle kwamacingo, kubandakanywa iziseko ze-5G, iinkqubo ze-radar, kunye ne-jammers. Uxinaniso lwamandla alo aphezulu kunye ne-thermal conductivity iyenza igqibelele kumandla aphezulu, izixhobo ezisebenza ngokuphindaphindiweyo, okwenza ukuba ukusebenza okungcono kunye nezinto ezincinci zefom xa kuthelekiswa nezisombululo ezisekelwe kwi-silicon.

I-Q4: Ngawaphi amaxesha okukhokela kunye nobungakanani obuncinci bomyalelo we-GaN kwii-wafers zeSapphire?

A4: Amaxesha okukhokela kunye nobungakanani beodolo encinci iyahluka ngokuxhomekeke kubukhulu be-wafer, ubukhulu be-GaN, kunye neemfuno ezithile zomthengi. Nceda uqhagamshelane nathi ngokuthe ngqo ngeenkcukacha zamaxabiso kunye nokufumaneka ngokusekelwe kwiinkcukacha zakho.

I-Q5: Ngaba ndingafumana ubukhulu be-GaN yesiko okanye amanqanaba e-doping?

A5: Ewe, sinikezela ngohlengahlengiso lwe-GaN ubukhulu kunye namanqanaba e-doping ukuhlangabezana neemfuno ezithile zesicelo. Nceda usazise iinkcukacha ozifunayo, kwaye siya kubonelela ngesisombululo esilungiselelweyo.