I-Gallium Nitride (GaN) Epitaxial ekhuliswe kwiiWafers zeSapphire eziyi-4 intshi eziyi-6 intshi ze-MEMS

I-Gallium Nitride (GaN) Epitaxial ekhuliswe kwiiWafers zeSapphire 4inch 6inch ze-MEMS Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Gallium Nitride (GaN) kwii-Sapphire wafers inika ukusebenza okungenakuthelekiswa nanto kwizicelo ezisebenzisa amaza aphezulu kunye namandla aphezulu, nto leyo eyenza ukuba ibe yeyona nto ifanelekileyo kwiimodyuli zangaphambili ze-RF (Radio Frequency) zesizukulwana esilandelayo, izibane ze-LED, kunye nezinye izixhobo ze-semiconductor.I-GaNIimpawu zombane eziphezulu, kuquka i-bandgap ephezulu, ziyivumela ukuba isebenze kwii-voltages eziphezulu zokuqhekeka kunye namaqondo obushushu kunezixhobo zemveli ezisekelwe kwi-silicon. Njengoko i-GaN isetyenziswa ngakumbi kune-silicon, iqhuba uphuhliso kwi-elektroniki olufuna izixhobo ezilula, ezinamandla, nezisebenzayo.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati zeGaN kwiiWafers zeSapphire

● Ukusebenza kakuhle kakhulu:Izixhobo ezisekelwe kwiGaN zibonelela ngamandla aphindwe kahlanu kunezixhobo ezisekelwe kwisilicon, nto leyo ephucula ukusebenza kwezicelo ezahlukeneyo ze-elektroniki, kubandakanya i-RF amplification kunye ne-optoelectronics.
●Isithuba esibanzi sebhendi:I-bandgap ebanzi yeGaN ivumela ukusebenza kakuhle kakhulu kumaqondo obushushu aphezulu, nto leyo eyenza ukuba ilungele ukusetyenziswa kwamandla aphezulu kunye ne-frequency ephezulu.
●Ukuqina:Ubuchule beGaN bokujongana neemeko eziqatha (amaqondo obushushu aphezulu kunye nemitha) buqinisekisa ukusebenza okuhlala ixesha elide kwiindawo ezinzima.
●Ubukhulu obuncinci:I-GaN ivumela ukuveliswa kwezixhobo ezincinci nezikhaphukhaphu xa kuthelekiswa nezixhobo ze-semiconductor zemveli, nto leyo eyenza kube lula izixhobo ze-elektroniki ezincinci nezinamandla ngakumbi.

Isishwankathelo

I-Gallium Nitride (GaN) ivela njenge-semiconductor ekhethwayo kwizicelo eziphambili ezifuna amandla aphezulu kunye nokusebenza kakuhle, njengeemodyuli ze-RF front-end, iinkqubo zonxibelelwano ezikhawulezayo, kunye nokukhanya kwe-LED. Ii-wafers ze-GaN epitaxial, xa zikhuliswe kwi-substrates ze-sapphire, zibonelela ngokudibanisa ubushushu obuphezulu, i-voltage ephezulu yokuqhekeka, kunye nempendulo ye-frequency ebanzi, ezibalulekileyo ekusebenzeni kakuhle kwizixhobo zonxibelelwano ezingenazingcingo, ii-radar, kunye nee-jammers. Ezi wafers zifumaneka zombini ububanzi obuyi-intshi ezi-4 kunye nobubanzi obuyi-intshi ezi-6, kunye nobukhulu obahlukeneyo be-GaN ukuhlangabezana neemfuno zobugcisa ezahlukeneyo. Iimpawu ezikhethekileyo ze-GaN ziyenza ibe ngumviwa ophambili kwikamva le-electronics yamandla.

Iiparamitha zeMveliso

Uphawu lweMveliso	Inkcazo
Ububanzi beWafer	50mm, 100mm, 50.8mm
I-substrate	I-Sapphire
Ubukhulu beLeya yeGaN	0.5 μm - 10 μm
Uhlobo lwe-GaN/Ukuxutywa kweDoping	Uhlobo lwe-N (uhlobo lwe-P luyafumaneka xa luceliwe)
Uqeqesho lwekristale yeGaN	<0001>
Uhlobo lokupholisha	Ipolishwe Ngecala Elinye (SSP), Ipolishwe Ngecala Elimbini (DSP)
Ubukhulu be-Al2O3	430 μm - 650 μm
I-TTV (Utshintsho loBukhulu obupheleleyo)	≤ 10 μm
Ukuqubuda	≤ 10 μm
I-Warp	≤ 10 μm
Indawo Yomphezulu	Indawo Enokusebenziseka > 90%

Imibuzo neempendulo

Q1: Zeziphi izibonelelo eziphambili zokusebenzisa iGaN kunee-semiconductors zemveli ezisekwe kwi-silicon?

A1: I-GaN inika iingenelo ezininzi ezibalulekileyo kune-silicon, kubandakanya i-bandgap ebanzi, evumela ukuba ikwazi ukusingatha ii-voltage eziphezulu zokuqhekeka kwaye isebenze ngokufanelekileyo kumaqondo obushushu aphezulu. Oku kwenza i-GaN ifaneleke kwizicelo ezinamandla aphezulu, eziphindaphindayo njengeemodyuli ze-RF, ii-amplifiers zamandla, kunye nee-LED. Ukukwazi kwe-GaN ukusingatha uxinano lwamandla aphezulu kukwavumela izixhobo ezincinci nezisebenzayo ngakumbi xa kuthelekiswa nezinye iindlela ezisekelwe kwi-silicon.

Umbuzo 2: Ngaba i-GaN kwi-Sapphire wafers ingasetyenziswa kwi-MEMS (Micro-Electro-Mechanical Systems)?

A2: Ewe, i-GaN kwii-wafers zeSapphire ifanelekile kwii-MEMS, ingakumbi apho kufuneka amandla aphezulu, uzinzo lobushushu, kunye nengxolo ephantsi. Ukuqina nokusebenza kakuhle kwezinto kwiindawo ezisebenzisa i-frequency ephezulu kwenza ukuba zilungele izixhobo ze-MEMS ezisetyenziswa kunxibelelwano olungenazingcingo, kwiinkqubo zokubona, kunye neenkqubo ze-radar.

Umbuzo 3: Ziziphi ii-applications ezinokubakho zeGaN kunxibelelwano olungenazingcingo?

A3: I-GaN isetyenziswa kakhulu kwiimodyuli ze-RF front-end zonxibelelwano olungenazingcingo, kubandakanya iziseko zophuhliso ze-5G, iinkqubo ze-radar, kunye nee-jammers. Uxinano lwayo lwamandla aphezulu kunye nokuhanjiswa kobushushu kuyenza ifaneleke kwizixhobo ezinamandla aphezulu, ezisebenzisa i-frequency ephezulu, okuvumela ukusebenza okungcono kunye nezinto ezincinci xa kuthelekiswa nezisombululo ezisekwe kwi-silicon.

Umbuzo 4: Ngawaphi amaxesha okukhokela kunye nobungakanani obuncinci boku-odola kweGaN kwii-wafers zeSapphire?

A4Amaxesha okukhokela kunye nobungakanani obuncinci be-odolo ziyahluka ngokuxhomekeke kubungakanani be-wafer, ubukhulu beGaN, kunye neemfuno zabathengi ezithile. Nceda unxibelelane nathi ngokuthe ngqo ukuze ufumane amaxabiso aneenkcukacha kunye nokufumaneka ngokusekelwe kwiinkcukacha zakho.

Umbuzo 5: Ndingafumana ubukhulu bemaleko yeGaN okanye amanqanaba okusebenzisa idoping?

A5: Ewe, sinikezela ngendlela yokwenza ngokwezifiso ubukhulu beGaN kunye namanqanaba okusebenzisa idoping ukuze kuhlangatyezwane neemfuno ezithile zesicelo. Nceda usazise iinkcukacha ozifunayo, kwaye siya kubonelela ngesisombululo esilungiselelwe wena.