I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu welaser wavelength 940nm indawo enye

I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu we-laser wavelength 940nm isiphambuka esinye Umfanekiso ofakiweyo

Inkcazelo emfutshane:

Uyilo olukhankanyiweyo lomThengi Gigabit Ethernet laser arrays ukufana eliphezulu 6-intshi wafers 850/940nm iziko optical wavelength oxide umda okanye proton-ezimiliselwe VCSEL data ikhonkco unxibelelwano lwedatha, laser mouse zombane kunye neempawu optical uvakalelo oluphantsi lobushushu. I-VCSEL-940 iSingle Junction yilaser ekhupha umphezulu othe nkqo (VCSEL) ene-wavelength ekhutshwayo ejikeleze i-940 nanometers. Iilaser ezinjalo zihlala zinequla elinye le-quantum kwaye ziyakwazi ukubonelela ngokukhutshwa kokukhanya okusebenzayo. Ubude be-nanometers be-940 buyenza kwi-infrared spectrum, ifanelekile kwiinkqubo ezahlukeneyo. Xa kuthelekiswa nezinye iintlobo ze-lasers, ii-VCsels zinoguqulo oluphezulu lwe-electro-optical. Iphakheji yeVCSEL incinci kwaye kulula ukuyidibanisa. Ukusetyenziswa okubanzi kwe-VCSEL-940 yenze ukuba idlale indima ebalulekileyo kwithekhnoloji yanamhlanje.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-GaAs laser epitaxial sheet zibandakanya

1. Isakhiwo se-Single-junction: Le laser ngokuqhelekileyo iqulunqwe ngumthombo omnye we-quantum, onokunika ukukhutshwa kokukhanya okusebenzayo.
2. Ubude be-wavelength: Ubude be-940 nm buyenza kwi-infrared spectrum range, ifanelekile kwiinkqubo ezahlukeneyo.
3. Ukusebenza okuphezulu: Xa kuthelekiswa nezinye iintlobo ze-laser, i-VCSEL ine-high electro-optical conversion performance esebenzayo.
4. Ukuhambelana: Iphakheji yeVCSEL incinci kwaye kulula ukuyidibanisa.

5. Umyinge ophantsi wangoku kunye nempumelelo ephezulu: Iilaser ze-heterostructure ezingcwatywayo zibonisa uxinano lwangoku olusezantsi kakhulu (umzekelo, i-4mA/cm²) kunye nomgangatho ophezulu wokuchaneka komyinge womyinge wangaphandle (umz. i-36%), kunye namandla aphuma kumda angaphezulu kwe-15mW.
6. Uzinzo lwemowudi yeWaveguide: I-laser engcwatywe i-heterostructure laser ine-advanteji yokuzinza kwemowudi ye-waveguide ngenxa yesalathiso se-refractive ekhokelwayo ye-waveguide mechanism kunye nobubanzi obumxinwa obusebenzayo (malunga ne-2μm).
7. Ukusebenza kakuhle kokuguqulwa kwe-photoelectric: Ngokulungisa inkqubo yokukhula kwe-epitaxial, ukusebenza kakuhle kwe-quantum yangaphakathi kunye nokusebenza kakuhle kokuguqulwa kwe-photoelectric kunokufumaneka ukunciphisa ilahleko yangaphakathi.
8. Ukuthembeka okuphezulu kunye nobomi: ubuchwephesha obuphezulu be-epitaxial ukukhula bunokulungiselela amaphepha e-epitaxial ngokubonakala kakuhle kwendawo kunye noxinzelelo oluphantsi, ukuphucula ukuthembeka kwemveliso kunye nobomi.
9. Ifanelekile kwizicelo ezahlukeneyo: I-GAAS-based laser diode epitaxial sheet isetyenziswa ngokubanzi kunxibelelwano lwefiber optical, izicelo zoshishino, i-infrared kunye ne-photodetectors kunye nezinye iinkalo.

Iindlela zokusetyenziswa eziphambili ze-GaAs laser epitaxial sheet zibandakanya

1. Unxibelelwano lwe-Optical kunye noqhagamshelwano lwedatha: I-GaAs epitaxial wafers isetyenziswa ngokubanzi kwintsimi yonxibelelwano lwe-optical, ngokukodwa kwiinkqubo zonxibelelwano ze-optical high-speed, zokuvelisa izixhobo ze-optoelectronic ezifana ne-laser kunye ne-detectors.

2. Izicelo zoshishino: I-GaAs laser epitaxial sheets nayo inokusetyenziswa okubalulekileyo kwizicelo zoshishino, ezifana nokucutshungulwa kwe-laser, ukulinganisa kunye nokuziva.

3. Ii-electronics zabathengi: Kwi-electronics yabathengi, ii-wafers ze-epitaxial ze-GaAs zisetyenziselwa ukuvelisa ii-VCsels (i-laser ze-laser ezikhupha umphezulu othe nkqo), ezisetyenziswa kakhulu kwii-smartphones kunye nezinye i-electronics zabathengi.

4. Usetyenziso lwe-RF: Imathiriyeli ye-GaAs ineenzuzo ezibalulekileyo kwintsimi yeRF kwaye isetyenziselwa ukwenza izixhobo zeRF ezisebenza kakhulu.

5. I-quantum dot lasers: I-GAAS-based quantum dot lasers isetyenziswa ngokubanzi kunxibelelwano, imimandla yezonyango kunye nemikhosi, ngakumbi kwi-1.31µm ibhendi yonxibelelwano olubonakalayo.

6. Ukutshintshwa kwe-Passive Q: I-absorber ye-GaAs isetyenziselwa i-diode-pumped state lasers eqinile kunye ne-passive Q switch, efanelekileyo kwi-micro-machining, i-range kunye ne-micro-surgery.

Ezi zicelo zibonisa amandla e-GaAs laser epitaxial wafers kuluhlu olubanzi lwezicelo zobuchwepheshe obuphezulu.

I-XKH inikezela nge-GaAs epitaxial wafers kunye nezakhiwo ezahlukeneyo kunye nobukhulu obuhambelana neemfuno zabathengi, ukugubungela uluhlu olubanzi lwezicelo ezifana ne-VCSEL / HCSEL, i-WLAN, i-4G / 5G izikhululo ezisisiseko, njl. Iimveliso ze-XKH zenziwa ngokusebenzisa izixhobo eziphambili ze-MOCVD zokuqinisekisa ukusebenza okuphezulu kunye nokuthembeka. Ngokubhekiselele kwi-logistics, sinoluhlu olubanzi lwamajelo omthombo wamazwe ngamazwe, singakwazi ukuphatha ngokuguquguqukayo inani lee-odolo, kunye nokubonelela ngeenkonzo zexabiso elongezelelweyo ezifana nokunciphisa, ukwahlula, njl. Emva kokufika, abathengi banokufumana inkxaso yobugcisa ebanzi kunye nenkonzo emva kokuthengisa ukuqinisekisa ukuba imveliso isetyenziswa kakuhle.