I-GaAs laser epitaxial wafer 4 intshi 6 intshi VCSEL vertical cavity surface emission laser wavelength 940nm single junction

Inkcazo emfutshane:

Uyilo oluchaziweyo lomthengi Ii-laser arrays zeGigabit Ethernet ezihambelanayo eziphezulu Ii-wafers ze-intshi ezi-6 850/940nm center optical wavelength oxide limited okanye proton-implanted VCSEL digital data link communication, laser mouse electrical and optical characteristics low sensitivity to heavy. I-VCSEL-940 Single Junction yi-vertical cavity surface emission laser (VCSEL) ene-emission wavelength ehlala imalunga ne-940 nanometers. Ezi lasers zihlala zinequla elinye le-quantum kwaye ziyakwazi ukubonelela ngokukhanya okusebenzayo. I-wavelength ye-940 nanometers iyenza ibe kwi-infrared spectrum, ifaneleke kwiintlobo ngeentlobo zezicelo. Xa kuthelekiswa nezinye iintlobo ze-laser, ii-VCSEL zinamandla aphezulu okuguqula i-electro-optical. Iphakheji ye-VCSEL incinci kwaye kulula ukuyidibanisa. Ukusetyenziswa okubanzi kwe-VCSEL-940 kwenze ukuba idlale indima ebalulekileyo kubuchwepheshe banamhlanje.

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Iimpawu eziphambili zephepha le-epitaxial le-laser yeGaAs ziquka

1. Ulwakhiwo olune-single-junction: Le laser idla ngokwenziwa yi-single quantum well, enokubonelela ngokukhupha ukukhanya okusebenzayo.
2. Ubude beWavelength: Ubude beWavelength obuyi-940 nm buyenza ibe kuluhlu lwe-infrared spectrum, ifanele ukusetyenziswa ngeendlela ezahlukeneyo.
3. Ukusebenza kakuhle: Xa kuthelekiswa nezinye iintlobo zeelaser, i-VCSEL inokusebenza kakuhle kokuguqulwa kwe-electro-optical.
4. Ubuncinci: Iphakheji ye-VCSEL incinci kwaye kulula ukuyidibanisa.

5. Umsinga ophantsi kunye nokusebenza kakuhle okuphezulu: Iilaser ze-heterostructure ezingcwatywe zibonisa uxinano oluphantsi kakhulu lwe-threshold current (umz. 4mA/cm²) kunye nokusebenza okuphezulu kwe-quantum yomahluko wangaphandle (umz. 36%), kunye namandla okukhupha angqalileyo adlula i-15mW.
6. Uzinzo lwemo ye-Waveguide: I-laser ye-heterostructure efihliweyo inenzuzo yozinzo lwemo ye-waveguide ngenxa yendlela yayo ye-refractive index guided waveguide mechanism kunye nobubanzi obuncinci be-active strip (malunga ne-2μm).
7. Ukusebenza kakuhle kokuguqula i-photoelectric: Ngokuphucula inkqubo yokukhula kwe-epitaxial, ukusebenza kakuhle kwe-quantum yangaphakathi kunye nokusebenza kakuhle kokuguqula i-photoelectric kunokufunyanwa ukunciphisa ilahleko yangaphakathi.
8. Ukuthembeka okuphezulu kunye nobomi: Itekhnoloji yokukhula kwe-epitaxial esemgangathweni ophezulu ingalungisa amaphepha e-epitaxial anembonakalo entle yomphezulu kunye noxinano oluphantsi lweziphene, iphucula ukuthembeka kwemveliso kunye nobomi bayo.
9. Ifanelekile kwiintlobo ngeentlobo zezicelo: Iphepha le-epitaxial le-laser diode elisekelwe kwi-GAAS lisetyenziswa kakhulu kunxibelelwano lwe-optical fiber, kwizicelo zemizi-mveliso, kwi-infrared nakwi-photodetectors nakwezinye iindawo.

Iindlela eziphambili zokusetyenziswa kwephepha le-epitaxial le-laser yeGaAs ziquka

1. Unxibelelwano lwe-Optical kunye nonxibelelwano lwedatha: Ii-GaAs epitaxial wafers zisetyenziswa kakhulu kwicandelo lonxibelelwano lwe-optical, ingakumbi kwiinkqubo zonxibelelwano lwe-optical ezikhawulezayo, ekwenzeni izixhobo ze-optoelectronic ezifana nee-laser kunye nee-detectors.

2. Usetyenziso lwemizi-mveliso: Amaphepha e-epitaxial e-laser eGaAs nawo aluncedo kakhulu kwizicelo zemizi-mveliso, njengokucubungula nge-laser, ukulinganisa kunye nokuva.

3. Ii-elektroniki zabathengi: Kwii-elektroniki zabathengi, ii-wafers ze-epitaxial ze-GaAs zisetyenziselwa ukuvelisa ii-VCsels (ii-vertical cavity surface-emitting lasers), ezisetyenziswa kakhulu kwiifowuni eziphathwayo nakwezinye ii-elektroniki zabathengi.

4. Usetyenziso lwe-Rf: Izixhobo zeGaAs zineengenelo ezibalulekileyo kwicandelo le-RF kwaye zisetyenziselwa ukuvelisa izixhobo ze-RF ezisebenza kakuhle.

5. Iilaser ze-quantum dot: Iilaser ze-quantum dot ezisekelwe kwi-GAAS zisetyenziswa kakhulu kwiinkalo zonxibelelwano, zonyango kunye nezomkhosi, ingakumbi kwi-1.31µm optical communication band.

6. Iswitshi ye-Passive Q: I-GaAs absorber isetyenziselwa ii-laser ze-solid state ezifakwe i-diode kunye neswitshi ye-Q engashukumiyo, efanelekileyo kwi-micro-machining, i-ranging kunye ne-micro-surgery.

Ezi zicelo zibonisa amandla ee-wafers ze-laser epitaxial zeGaAs kwiintlobo ngeentlobo zezicelo zobugcisa obuphezulu.

I-XKH inikezela ngee-wafers ze-epitaxial ze-GaAs ezinezakhiwo ezahlukeneyo kunye nobukhulu obulungiselelwe iimfuno zabathengi, ezigubungela uluhlu olubanzi lwezicelo ezifana ne-VCSEL/HCSEL, i-WLAN, izikhululo zesiseko ze-4G/5G, njl. Iimveliso ze-XKH zenziwe kusetyenziswa izixhobo ze-MOCVD eziphambili ukuqinisekisa ukusebenza okuphezulu kunye nokuthembeka. Ngokuphathelele uthutho, sineendlela ezahlukeneyo zemithombo yamazwe ngamazwe, sinokuphatha inani lee-odolo ngokuguquguquka, kwaye sinikezele ngeenkonzo ezongeziweyo ezifana nokunciphisa, ukwahlukanisa, njl. Iinkqubo zokuhambisa ezisebenzayo ziqinisekisa ukuhanjiswa ngexesha elifanelekileyo kwaye zihlangabezana neemfuno zabathengi zomgangatho kunye namaxesha okuhanjiswa. Emva kokufika, abathengi banokufumana inkxaso yobugcisa epheleleyo kunye nenkonzo yasemva kokuthengisa ukuqinisekisa ukuba imveliso isetyenziswa kakuhle.