Isikhululo esiphindwe kabini somatshini wesikwere se-monocrystalline yesilicon yentonga yokusetyenzwa kwe-6/8/12 intshi yomphezulu womphezulu Ra≤0.5μm

Isikhululo esiphindwe kabini somatshini wesikwere se-monocrystalline i-silicon yentonga yokusetyenzwa kwe-6/8/12 intshi yomphezulu wokuba umphezulu Ra≤0.5μm Umfanekiso ofakiweyo

Inkcazelo emfutshane:

I-Monocrystalline silicon double station square machine sisixhobo esisebenzayo sokusetyenzwa kweentonga ze-silicon ze-monocrystalline (Ingot). Yamkela uyilo olusebenzayo lwesikhululo esiphindwe kabini kwaye inokusika iintonga ezimbini ze-silicon ngaxeshanye, iphucula kakhulu ukusebenza kakuhle kwemveliso. Isixhobo siqhuba iintonga ze-silicon ze-cylindrical kwi-square / quasi-square silicon blocks (i-Grit) ngokusebenzisa iteknoloji yokusika i-diamond wire okanye i-saw blades yangaphakathi yesetyhula, ilungiselela ukusika okulandelayo (njengokwenza ii-silicone wafers), kwaye isetyenziswa ngokubanzi kwi-silicon processing material links kwi-photovoltaic kunye ne-semiconductor kumashishini.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu zesiXhobo:

(1) Isitishi esiphindwe kabini ukusetyenzwa kwe-synchronous
· Ukusebenza ngokuphindwe kabini: Ukucutshungulwa kwangaxeshanye kweentonga ezimbini ze-silicon (Ø6"-12") kwandisa imveliso nge-40% -60% vs. izixhobo ze-Simplex.

· Ulawulo oluzimeleyo: Isikhululo ngasinye sinokulungelelanisa ngokuzimeleyo iiparitha zokusika (uxinzelelo, isantya sokutya) ukulungelelanisa neenkcukacha zentonga ye-silicon.

(2) Ukusika okuphezulu
· Ukuchaneka komgangatho: ukunyamezela komgama webar yesikwele ± 0.15mm, uluhlu ≤0.20mm.

· Umgangatho womphezulu: ukuqhawula i-edge <0.5mm, ukunciphisa inani lokugaya okulandelayo.

(3) Ukulawula ngobulumko
· Ukusika okuguquguqukayo: ukujongwa kwexesha lokwenyani le-silicon rod morphology, ukulungiswa okuguquguqukayo kwendlela yokusika (njengokulungisa intonga ye-silicon egobileyo).

· Ukulandeleka kwedatha: rekhoda iiparamitha zokusetyenzwa kwentonga nganye yesilicon ukuxhasa inkqubo ye-MES docking.

(4) Iindleko eziphantsi ezinokusetyenziswa
· Ukusetyenziswa kwedayimane yocingo: ≤0.06m/mm (ubude bentonga ye-silicon), ububanzi bocingo ≤0.30mm.

Ujikelezo olupholileyo: Inkqubo yokucoca yandisa ubomi benkonzo kwaye inciphisa ukulahlwa kolwelo oluyinkunkuma.

Itekhnoloji kunye neenzuzo zophuhliso:

(1) Ukusika ukusetyenziswa kweteknoloji
- I-Multi-line cutting: i-100-200 imigca yedayimane isetyenziswe ngokufanayo, kwaye isantya sokusika si-≥40mm / min.

- Ulawulo loxinzelelo: Inkqubo yokulungelelanisa i-loop evaliweyo (± 1N) ukunciphisa umngcipheko wokuqhawula ucingo.

(2) Ukwandiswa kokuhambelana
- Ukulungelelaniswa kwezinto: Inkxaso ye-P-uhlobo / i-N-uhlobo lwe-silicon ye-monocrystalline, ehambelana ne-TOPCon, i-HJT kunye nezinye iintsimbi ze-silicon eziphezulu zebhetri.

- Ubungakanani obuguquguqukayo: ubude bentonga ye-silicon 100-950mm, umgama wentonga yesikwele 166-233mm eguquguqukayo.

(3) Ukuphuculwa okuzenzekelayo
- Ukulayishwa kwerobhothi kunye nokukhulula: ukulayishwa ngokuzenzekelayo / ukukhulula iintonga ze-silicon, betha ≤3 imizuzu.

- Ukuxilonga okuhlakaniphile: Ukugcinwa kwangaphambili ukunciphisa ixesha lokuphumla elingacwangciswanga.

(4) Ubunkokeli boshishino
- Inkxaso ye-wafer: iyakwazi ukucubungula i-≥100μm i-silicon e-ultra-thin eneentonga zesikwere, izinga lokuqhekeka <0.5%.

- Ukusetyenziswa kakuhle kwamandla: Ukusetyenziswa kwamandla kwiyunithi nganye ye-silicon rod kuncitshiswe nge-30% (vs. izixhobo zemveli).

Imilinganiselo yobugcisa:

Igama lepharamitha	Ixabiso lesalathisi
Inani leebha ezisetyenzisiweyo	2 iziqwenga / iseti
Uluhlu lobude bebha	100 ~ 950mm
Uluhlu lomda womatshini	166 ~ 233mm
Ukusika isantya	≥40mm/min
Isantya socingo lwedayimani	0~35m/s
Idayimani yedayimani	0.30 mm okanye ngaphantsi
Ukusetyenziswa komgca	0.06 m/mm okanye ngaphantsi
Idayamitha yentonga engqukuva ehambelanayo	Ugqitywe intonga yesikweri ububanzi +2mm, Qinisekisa izinga lokupasa lokupholisha
Ukulawula ukuphulwa kokunciphisa	Umphetho okrwada ≤0.5mm, Akukho ukutshiphuza, umgangatho ophezulu womphezulu
Ubude be-arc ukufana	Uluhlu loqikelelo <1.5mm, Ngaphandle kokuphazamiseka kwentonga ye-silicon
Imilinganiselo yomatshini (umatshini omnye)	4800×3020×3660mm
Amandla alinganisiweyo ewonke	56kW
Ubunzima obufileyo bezixhobo	12t

Umatshini wokuchaneka kwetafile:

Into echanekileyo	Uluhlu lokunyamezela
Unyamezelo lomda webar yesikwere	±0.15mm
Umda webar yesikwere	≤0.20mm
I-engile kumacala onke entonga yesikwere	90°±0.05°
I-Flatness yentonga yesikwere	≤0.15mm
Irobhothi iphindaphinda ukuchaneka kokubeka	±0.05mm

Iinkonzo ze-XKH:

I-XKH inikezela ngeenkonzo ezipheleleyo zomjikelo we-silicon ye-mono-crystalline oomatshini be-silicon dual-station, kubandakanywa ukulungelelanisa izixhobo (ezihambelanayo kunye neentonga ze-silicon ezinkulu), ukuthunyelwa kwenkqubo (ukusika i-parameter optimization), uqeqesho lokusebenza kunye nenkxaso yokuthengisa emva kokuthengisa (unikezelo lwamacandelo abalulekileyo, ukuxilongwa okude), ukuqinisekisa ukuba abathengi bafezekise isivuno esiphezulu (> 99%) kunye nemveliso yexabiso eliphantsi, kunye nokubonelela ngokuphuculwa kwe-technical upgrades (ukusika i-AI). Ixesha lokuhanjiswa ziinyanga ezi-2-4.