I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) i-binary compound yeqela le-IV-IV, i-compound eqinile kuphela eqinile kwiqela le-IV yetafile ye-periodic, kwaye yinto ebalulekileyo ye-semiconductor.Inomgangatho obalaseleyo we-thermal, oomatshini, iikhemikhali kunye neepropati zombane, ayisiyiyo kuphela imveliso yobushushu obuphezulu, i-high-frequency, i-high-high-power-electronic devices, enye yezinto ezikumgangatho ophezulu, kodwa ingasetyenziselwa njengento esekelwe kwi-substrate. kwiGaN blue-emitting diode.Okwangoku isetyenziselwa i-substrate silicon carbide ukuya kwi-4H-based, uhlobo lwe-conductive luhlulwe lube yi-semi-insulating type (non-doped, doped) kunye ne-N-type.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-6 intshi ye-silicon carbide mosfet wafers zilandelayo;.

Ukumelana kwamandla ombane aphezulu: I-Silicon carbide inendawo yombane eyophukayo, ngoko ke ii-intshi ezi-6 ze-silicon carbide mosfet wafers zinamandla okumelana nombane ophezulu, zilungele iimeko zokusetyenziswa kwamandla ombane aphezulu.

Uxinaniso oluphezulu lwangoku: I-silicon ye-carbide inokunyakaza kwe-electron enkulu, okwenza ii-6-intshi ze-silicon carbide mosfet wafers zibe noxinano olukhulu lwangoku ukuze zimelane nangoku.

Ukusebenza okuphezulu okusebenzayo: I-silicon carbide ine-carrier carrier mobility, eyenza i-6-intshi ye-silicon carbide mosfet wafers ine-frequency yokusebenza ephezulu, ifanelekile kwiimeko zesicelo esiphezulu.

Uzinzo oluhle lwe-thermal: I-Silicon carbide inomgangatho ophezulu we-thermal conductivity, okwenza i-6-intshi ye-silicon carbide mosfet wafers isenokusebenza kakuhle kwiindawo zokushisa eziphezulu.

Ii-intshi ezi-6 ze-silicon carbide mosfet wafers zisetyenziswa kakhulu kwezi ndawo zilandelayo: ii-electronics zamandla, ezibandakanya ii-transformers, ii-rectifiers, ii-inverters, i-amplifiers zamandla, njl. iseli ye-fuel, i-DC-DC converter (DCDC), i-motor drive yombane kunye neendlela zedijithali kwintsimi yamaziko edatha kunye nezinye iindawo ezinoluhlu olubanzi lwezicelo.

Sinokubonelela nge-4H-N 6inch ye-SiC substrate, amabakala ahlukeneyo e-substrate stock wafers.Singakwazi kwakhona ukulungelelanisa ukwenza ngokweemfuno zakho.Wamkelekile umbuzo!

Idayagram eneenkcukacha

I-asd (1)
i-asd (2)
I-asd (3)

  • Ngaphambili:
  • Okulandelayo:

  • Bhala umyalezo wakho apha kwaye uwuthumele kuthi