I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy
Iimpawu eziphambili ze-6 intshi ye-silicon carbide mosfet wafers zilandelayo;.
Ukumelana kwamandla ombane aphezulu: I-Silicon carbide inendawo yombane eyophukayo, ngoko ke ii-intshi ezi-6 ze-silicon carbide mosfet wafers zinamandla okumelana nombane ophezulu, zilungele iimeko zokusetyenziswa kwamandla ombane aphezulu.
Uxinaniso oluphezulu lwangoku: I-silicon ye-carbide inokunyakaza kwe-electron enkulu, okwenza ii-6-intshi ze-silicon carbide mosfet wafers zibe noxinano olukhulu lwangoku ukuze zimelane nangoku.
Ukusebenza okuphezulu okusebenzayo: I-silicon carbide ine-carrier carrier mobility, eyenza i-6-intshi ye-silicon carbide mosfet wafers ine-frequency yokusebenza ephezulu, ifanelekile kwiimeko zesicelo esiphezulu.
Uzinzo oluhle lwe-thermal: I-Silicon carbide inomgangatho ophezulu we-thermal conductivity, okwenza i-6-intshi ye-silicon carbide mosfet wafers isenokusebenza kakuhle kwiindawo zokushisa eziphezulu.
Ii-intshi ezi-6 ze-silicon carbide mosfet wafers zisetyenziswa kakhulu kwezi ndawo zilandelayo: ii-electronics zamandla, ezibandakanya ii-transformers, ii-rectifiers, ii-inverters, i-amplifiers zamandla, njl. iseli ye-fuel, i-DC-DC converter (DCDC), i-motor drive yombane kunye neendlela zedijithali kwintsimi yamaziko edatha kunye nezinye iindawo ezinoluhlu olubanzi lwezicelo.
Sinokubonelela nge-4H-N 6inch ye-SiC substrate, amabakala ahlukeneyo e-substrate stock wafers. Singakwazi kwakhona ukulungelelanisa ukwenza ngokweemfuno zakho. Wamkelekile umbuzo!