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I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy

I-Dia150mm 4H-N 6inch ye-SiC substrate Imveliso kunye nebakala le-dummy Umfanekiso obonakalayo
  • I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy
  • I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy
  • I-Dia150mm 4H-N 6inch ye-SiC substrate Ukuveliswa kunye nebakala le-dummy

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) i-binary compound yeqela le-IV-IV, i-compound eqinile kuphela eqinile kwiqela le-IV yetafile ye-periodic, kwaye yinto ebalulekileyo ye-semiconductor. Inomgangatho obalaseleyo we-thermal, mechanical, chemical and electrical properties, kungekhona nje ukuveliswa kweqondo lokushisa eliphezulu, i-high-frequency, i-high-frequency, i-high-power-electronic devices, enye yezinto eziphezulu, kodwa ingasetyenziselwa njenge-substrate material esekelwe kwi-GaN blue-emitting diode. Okwangoku isetyenziselwa i-substrate silicon carbide ukuya kwi-4H-based, uhlobo lwe-conductive luhlulwe lube luhlobo lwe-semi-insulating (non-doped, doped) kunye nohlobo lwe-N.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-6 intshi ye-silicon carbide mosfet wafers zilandelayo;.

Ukumelana kwamandla ombane aphezulu: I-Silicon carbide inendawo yombane eyophukayo, ngoko ke ii-intshi ezi-6 ze-silicon carbide mosfet wafers zinamandla okumelana nombane ophezulu, zilungele iimeko zokusetyenziswa kwamandla ombane aphezulu.

Uxinaniso oluphezulu lwangoku: I-silicon ye-carbide inokunyakaza kwe-electron enkulu, okwenza ii-6-intshi ze-silicon carbide mosfet wafers zibe noxinano olukhulu lwangoku ukuze zimelane nangoku.

Ukusebenza okuphezulu okusebenzayo: I-silicon carbide ine-carrier carrier mobility, eyenza i-6-intshi ye-silicon carbide mosfet wafers ine-frequency yokusebenza ephezulu, ifanelekile kwiimeko zesicelo esiphezulu.

Uzinzo oluhle lwe-thermal: I-Silicon carbide inomgangatho ophezulu we-thermal conductivity, okwenza i-6-intshi ye-silicon carbide mosfet wafers isenokusebenza kakuhle kwiindawo zokushisa eziphezulu.

Ii-intshi ezi-6 ze-silicon carbide mosfet wafers zisetyenziswa kakhulu kwezi ndawo zilandelayo: ii-electronics zamandla, ezibandakanya ii-transformers, ii-rectifiers, ii-inverters, ii-amplifiers zamandla, njl. njl., ezifana ne-solar inverters, ukutshaja isithuthi samandla amatsha, uthutho lukaloliwe, i-high-speed air compressor kwi-cell cell, i-DC-DC converter (DC-DC) kunye nezinye iindawo zombane zemoto kunye nezinye iindawo zombane. uluhlu lwezicelo.

Sinokubonelela nge-4H-N 6inch ye-SiC substrate, amabakala ahlukeneyo e-substrate stock wafers. Singakwazi kwakhona ukulungelelanisa ukwenza ngokweemfuno zakho. Wamkelekile umbuzo!

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