I-GaN-on-SiC Epitaxial Wafers eyenziwe ngokwezifiso (100mm, 150mm) -Iinketho ezininzi ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)

IiWafers ze-Epitaxial ze-GaN-on-SiC ezilungiselelweyo (100mm, 150mm) – IiNdlela eziNgcono zeSiC zeSubstrate (4H-N, HPSI, 4H/6H-P) Umfanekiso obonisiweyo

Inkcazelo emfutshane:

IiWafers zethu ze-GaN-on-SiC Epitaxial zibonelela ngokusebenza okuphezulu kwamandla aphezulu, izicelo ezisebenza ngokuphindaphindiweyo ngokudibanisa iipropati ezikhethekileyo ze-Gallium Nitride (GaN) kunye ne-thermal conductivity enamandla kunye namandla omatshiniI-Silicon Carbide (SiC). Ifumaneka kwi-100mm kunye ne-150mm yeesayizi ze-wafer, ezi ziqwenga zakhiwe kwiinketho ezahlukeneyo ze-SiC substrate, kuquka i-4H-N, i-HPSI, kunye neentlobo ze-4H / 6H-P, ezilungiselelwe ukuhlangabezana neemfuno ezithile zombane wamandla, i-RF amplifiers, kunye nezinye izixhobo eziphambili ze-semiconductor. Ngomaleko we-epitaxial onokwenziwa ngokwezifiso kunye nee-substrates ze-SiC ezizodwa, ii-wafers zethu ziyilelwe ukuqinisekisa ukusebenza kakuhle okuphezulu, ulawulo lwe-thermal, kunye nokuthembeka kokufunwa kwezicelo zemizi-mveliso.

Thumela i-imeyile kuthi

Iimbonakalo

●Epitaxial Layer Ukutyeba: Customizable ukusuka1.0 µmukuya3.5µm, elungiselelwe amandla aphezulu kunye nokusebenza rhoqo.

● Iinketho zeSiC Substrate: Iyafumaneka ngee substrates zeSiC ezahlukeneyo, kuquka:

4H-N: Umgangatho ophezulu we-Nitrogen-doped 4H-SiC ye-high-frequency, izicelo eziphezulu zamandla.
HPSI: I-High-Purity Semi-Insulating SiC yezicelo ezifuna ukuhlukaniswa kombane.
4H/6H-P: I-4H exutywe kunye ne-6H-SiC yokulinganisela kokusebenza okuphezulu kunye nokuthembeka.

● Ubungakanani beWafer: Iyafumaneka kwi100mmkwaye150mmiidayamitha zokuguquguquka kumlinganiselo wesixhobo kunye nokudibanisa.

●I-Voltage High Breakdown: I-GaN kwitekhnoloji ye-SiC ibonelela nge-voltage ephezulu yokuqhekeka, eyenza ukusebenza ngamandla kwizicelo zamandla aphezulu.

● High Thermal Conductivity: I-SiC yendalo ye-thermal conductivity (malunga 490 W/m·K) iqinisekisa ukuchithwa kobushushu okugqwesileyo kwizicelo ezinamandla kakhulu.

IiNgcaciso zobuGcisa

Ipharamitha	Ixabiso
I-Wafer Diameter	100mm, 150mm
Epitaxial umaleko Ukutyeba	1.0 µm – 3.5 µm (inokwenziwa ngokwezifiso)
Iintlobo ze-SiC Substrate	4H-N, HPSI, 4H/6H-P
I-SiC Thermal Conductivity	490 W/m·K
Ukuxhathisa kweSiC	4H-N: 10^6 Ω·cm,HPSI: ISemi-Insulating,4H/6H-P: Ixutywe 4H / 6H
GaN Layer Ukutyeba	1.0 µm – 2.0 µm
I-GaN Carrier Concentration	10^18 cm^-3 ukuya 10^19 cm^-3 (customizable)
Umgangatho weWafer Surface	Uburhabaxa be-RMS< 1 nm
Uxinaniso lokuTyeka	< 1 x 10^6 cm^-2
I-Wafer Bow	< 50µm
I-Wafer Flatness	< 5µm
Ubushushu obuphezulu bokusebenza	400°C (eqhelekileyo kwizixhobo ze-GaN-on-SiC)

Usetyenziso

● Umbane woMbane:Ii-wafers ze-GaN-on-SiC zibonelela ngobuchule obuphezulu kunye nokutshatyalaliswa kobushushu, okubenza bafanelekele i-amplifiers, izixhobo zokuguqula amandla, kunye neesekethe zokuguqula amandla ezisetyenziswa kwizithuthi zombane, iinkqubo zamandla avuselelekayo, kunye noomatshini boshishino.
●Izandisi zaMandla eRF:Indibaniselwano ye-GaN kunye ne-SiC ifanelekile kwi-high-frequency, i-high-power-high-application RF efana nonxibelelwano, unxibelelwano lwesathelayithi, kunye neenkqubo zeradar.
● I-Aerospace kunye noKhuselo:Ezi ziqwenga zifanelekile kwi-aerospace kunye nobuchwepheshe bokukhusela obufuna i-electronics yamandla aphezulu kunye neenkqubo zonxibelelwano ezinokusebenza phantsi kweemeko ezinzima.
●Usetyenziso lweZimoto:Efanelekileyo kwiinkqubo zamandla ezisebenza kakhulu kwizithuthi zombane (EVs), izithuthi ezixubileyo (HEVs), kunye nezikhululo zokutshaja, ezivumela ukuguqulwa kwamandla kunye nokulawula ngokufanelekileyo.
● IiNkqubo zoMkhosi neRada:Ii-wafers ze-GaN-on-SiC zisetyenziswa kwiinkqubo ze-radar ngokusebenza kwazo okuphezulu, amandla okuphatha amandla, kunye nokusebenza kwe-thermal kwiindawo ezifunayo.
●IMicrowave kunye neMillimeter-Wave Applications:Kwiinkqubo zonxibelelwano zesizukulwana esilandelayo, kubandakanywa i-5G, i-GaN-on-SiC ibonelela ngokusebenza ngokufanelekileyo kwi-microwave yamandla aphezulu kunye ne-millimeter-wave ranges.

Q&A

I-Q1: Ziziphi iingenelo zokusebenzisa i-SiC njenge-substrate ye-GaN?

A1:I-Silicon Carbide (i-SiC) inikezela nge-conductivity ephezulu ye-thermal, i-voltage ephezulu yokuphuka, kunye namandla omatshini xa kuthelekiswa ne-substrates zendabuko ezifana ne-silicon. Oku kwenza ukuba ii-wafers ze-GaN-on-SiC zilungele ukusetyenziswa kwamandla aphezulu, i-frequency ephezulu, kunye nobushushu obuphezulu. I-substrate ye-SiC inceda ukutshabalalisa ukushisa okwenziwa zizixhobo ze-GaN, ukuphucula ukuthembeka nokusebenza.

I-Q2: Ngaba ubukhulu be-epitaxial layer bungenziwa ngokwezifiso kwizicelo ezithile?

A2:Ewe, ubukhulu be-epitaxial layer bunokwenziwa ngokwezifiso phakathi koluhlu1.0 µm ukuya kwi-3.5 µm, kuxhomekeke kumandla kunye neemfuno zezihlandlo zesicelo sakho. Sinokwenza ungqingqwa womaleko we-GaN ukwandisa ukusebenza kwezixhobo ezithile ezifana nezandisi zamandla, iisistim zeRF, okanye iisekethe ezisebenza ngamandla.

I-Q3: Uthini umahluko phakathi kwe-4H-N, HPSI, kunye ne-4H / 6H-P ye-SiC substrates?

A3:

4H-N: I-Nitrogen-doped 4H-SiC isetyenziswa ngokuqhelekileyo kwizicelo ze-high-frequency ezifuna ukusebenza okuphezulu kwe-elektroniki.
HPSI: I-High-Purity Semi-Insulating SiC inikezela ukuhlukaniswa kombane, ilungele izicelo ezifuna ukuhanjiswa kombane okuncinci.
4H/6H-P: Umxube we-4H kunye ne-6H-SiC elinganisa ukusebenza, enikezela ukudibanisa okuphezulu kunye nokuqina, okufanelekileyo kwizicelo ezahlukeneyo ze-electronics zamandla.

I-Q4: Ngaba ezi zikhuni ze-GaN-on-SiC zifanelekile kwizicelo zamandla aphezulu njengezithuthi zombane kunye namandla avuselelekayo?

A4:Ewe, ii-wafers ze-GaN-on-SiC zilungele ukusetyenziswa kwamandla aphezulu njengezithuthi zombane, amandla avuselelekayo, kunye neenkqubo zoshishino. I-voltage ephezulu yokuphuka, i-conductivity ephezulu ye-thermal, kunye namandla okuphatha amandla ezixhobo ze-GaN-on-SiC zibenza bakwazi ukwenza ngokufanelekileyo ekufuneni ukuguqulwa kwamandla kunye nokulawula iisekethe.

I-Q5: Yeyiphi ingxinano ye-dislocation eqhelekileyo kwezi ziphaluka?

A5:Ukuxinana kwe-dislocation yala mawafa e-GaN-on-SiC aqhelekile< 1 x 10^6 cm^-2, eqinisekisa ukukhula kwe-epitaxial ephezulu, ukunciphisa iziphene kunye nokuphucula ukusebenza kwesixhobo kunye nokuthembeka.

I-Q6: Ndingacela ubungakanani obuthile be-wafer okanye uhlobo lwe-SiC substrate?

A6:Ewe, sinikezela ngobungakanani obucwangcisiweyo be-wafer (100mm kunye ne-150mm) kunye neentlobo ze-SiC substrate (4H-N, HPSI, 4H / 6H-P) ukuhlangabezana neemfuno ezithile zesicelo sakho. Nceda uqhagamshelane nathi ukuze ufumane ezinye iinketho zokwenza ngokwezifiso kwaye uxoxe ngeemfuno zakho.

I-Q7: Ii-wafers ze-GaN-on-SiC ziqhuba njani kwiindawo ezigqithiseleyo?

A7:Ii-wafers ze-GaN-on-SiC zilungele iimeko ezingqongileyo ezigqithisileyo ngenxa yozinzo lwazo oluphezulu lwe-thermal, ukuphatha amandla aphezulu, kunye nezakhono ezibalaseleyo zokulahla ubushushu. Ezi ziqwenga zisebenza kakuhle kubushushu obuphezulu, amandla aphezulu, kunye neemeko ezixhaphakileyo eziqhele ukudibana ne-aerospace, ukhuselo, kunye nezicelo zemizi-mveliso.

Ukuqukumbela

I-GaN-on-SiC Epitaxial Wafers yethu eyenziwe ngokwezifiso idibanisa iipropathi eziphambili ze-GaN kunye ne-SiC ukubonelela ngokusebenza okuphezulu kumandla aphezulu kunye nezicelo eziphezulu ze-frequency. Ngokhetho oluninzi lwe-substrate ye-SiC kunye ne-customizable epitaxial layers, ezi ziqwenga zifanelekile kumashishini afuna ukusebenza kakuhle okuphezulu, ulawulo lobushushu kunye nokuthembeka. Nokuba zezombane zamandla, iinkqubo zeRF, okanye izicelo zokhuselo, iiwafers zethu zeGaN-on-SiC zibonelela ngokusebenza kunye nokuguquguquka okufunekayo.