IiWafers ze-GaN-on-SiC Epitaxial ezenzelwe wena (100mm, 150mm) – Iinketho ezininzi zeSiC Substrate (4H-N, HPSI, 4H/6H-P)

Inkcazo emfutshane:

IiWafers zethu ze-Epitaxial ze-GaN-on-SiC ezenziwe ngokwezifiso zibonelela ngokusebenza okuphezulu kwizicelo ezinamandla aphezulu, ezisetyenziswa rhoqo ngokudibanisa iipropati ezikhethekileyo zeGallium Nitride (GaN) kunye nokuqhuba okunamandla kobushushu kunye namandla oomatshiniI-Silicon Carbide (i-SiC)Ezi wafers zifumaneka ngobukhulu be-100mm kunye ne-150mm, zakhiwe kwiintlobo ngeentlobo ze-substrate ze-SiC, kuquka iintlobo ze-4H-N, HPSI, kunye ne-4H/6H-P, ezenzelwe ukuhlangabezana neemfuno ezithile ze-electronics zamandla, ii-RF amplifiers, kunye nezinye izixhobo ze-semiconductor eziphambili. Ngeeleya ze-epitaxial ezinokwenziwa ngokwezifiso kunye nee-substrates ze-SiC ezizodwa, ii-wafers zethu zenzelwe ukuqinisekisa ukusebenza kakuhle, ulawulo lobushushu, kunye nokuthembeka kwizicelo zoshishino ezifuna amandla.

Thumela i-imeyile kuthi

Iimbonakalo

● Ubukhulu boMaleko we-Epitaxial: Ingenziwa ngokwezifiso ukusuka1.0 µmukuya3.5 µm, ilungiselelwe amandla aphezulu kunye nokusebenza rhoqo.

●Iinketho zeSiC Substrate: Ifumaneka ngee-substrates ezahlukeneyo ze-SiC, kuquka:

4H-N: I-4H-SiC ene-nitrogen ekumgangatho ophezulu esetyenziswa rhoqo, enamandla aphezulu.
I-HPSI: I-High-Purity Semi-Insulating SiC kwizicelo ezifuna ukwahlulwa kombane.
4H/6H-P: I-Mixed 4H kunye ne-6H-SiC ukuze kubekho ulungelelwaniso olusebenzayo noluthembekileyo.

●Ubungakanani beWafer: Ifumaneka kwi100mmkwaye150mmiidayamitha zokuguquguquka ekulinganiseni nasekudibaniseni izixhobo.

● I-Voltage ephezulu yokuqhekeka: Itekhnoloji ye-GaN kwi-SiC ibonelela nge-voltage ephezulu yokuqhekeka, okuvumela ukusebenza okuqinileyo kwizicelo ezinamandla aphezulu.

●Ukuqhuba okuphezulu kobushushu: Ukuqhuba kobushushu okuqhelekileyo kweSiC (malunga 490 W/m·K) iqinisekisa ukuchithwa kobushushu okugqwesileyo kwizicelo ezisebenzisa umbane omninzi.

Iinkcukacha zobugcisa

Ipharamitha	Ixabiso
Ububanzi beWafer	100mm, 150mm
Ubukhulu Bomaleko we-Epitaxial	1.0 µm – 3.5 µm (ingenziwa ngokwezifiso)
Iintlobo zeSiC Substrate	4H-N, HPSI, 4H/6H-P
Ukuqhuba kweSiC Thermal	490 W/m·K
Ukumelana neSiC	4H-N: 10^6 Ω·cm,I-HPSI: Ukuthintela ukugquma,4H/6H-P: I-4H/6H exutyiweyo
Ubukhulu beLeya yeGaN	1.0 µm – 2.0 µm
Uxinzelelo lweGaN Carrier	10^18 cm^-3 ukuya kwi-10^19 cm^-3 (ingenziwa ngokwezifiso)
Umgangatho womphezulu weWafer	Ubunzima be-RMS: < 1 nm
Uxinano lokuphuma kwindawo ethile	< 1 x 10^6 cm^-2
Isaphetha seWafer	< 50 µm
I-Wafer Flatness	< 5 µm
Ubushushu obuphezulu bokusebenza	400°C (eqhelekileyo kwizixhobo zeGaN-on-SiC)

Izicelo

●Izixhobo zombane:Iiwafer zeGaN-on-SiC zibonelela ngokusebenza kakuhle kakhulu kunye nokusasaza ubushushu, nto leyo ezenza zibe zilungele ii-amplifiers zamandla, izixhobo zokuguqula umbane, kunye neesekethe ze-power-inverter ezisetyenziswa kwizithuthi zombane, kwiinkqubo zamandla avuselelekayo, kunye noomatshini bemizi-mveliso.
●Izixhobo zokukhulisa amandla ze-RF:Indibaniselwano yeGaN kunye neSiC ifanelekile kwizicelo zeRF ezinamandla aphezulu nezinamandla aphezulu ezifana nonxibelelwano, unxibelelwano lwesathelayithi, kunye neenkqubo zeradar.
●Indawo Yomoya Nokhuselo:Ezi wafers zifanelekile kwiiteknoloji zeenqwelo moya nezokhuselo ezifuna izixhobo ze-elektroniki ezinamandla aphezulu kunye neenkqubo zonxibelelwano ezinokusebenza phantsi kweemeko ezinzima.
●Izicelo zeeMoto:Ilungele iinkqubo zamandla ezisebenza kakuhle kwizithuthi zombane (ii-EV), izithuthi ezixutyiweyo (ii-HEV), kunye nezikhululo zokutshaja, nto leyo evumela ukuguqulwa nokulawulwa kwamandla ngokufanelekileyo.
●Iinkqubo zoMkhosi nezeRadar:Ii-wafer ze-GaN-on-SiC zisetyenziswa kwiinkqubo ze-radar ngenxa yokusebenza kwazo kakuhle, amandla okuphatha amandla, kunye nokusebenza kobushushu kwiindawo ezifuna amandla amaninzi.
●Izicelo zeMicrowave kunye neMillimeter-Wave:Kwiinkqubo zonxibelelwano zesizukulwana esilandelayo, kuquka i-5G, iGaN-on-SiC inika ukusebenza okugqwesileyo kwii-microwave ezinamandla aphezulu kunye nee-millimeter-wave ranges.

Imibuzo neempendulo

Umbuzo 1: Zithini iingenelo zokusebenzisa iSiC njengesiseko seGaN?

A1:I-Silicon Carbide (i-SiC) inika ukuhanjiswa kobushushu okuphezulu, i-voltage ephezulu yokuqhekeka, kunye namandla oomatshini xa kuthelekiswa ne-substrates zendabuko ezifana ne-silicon. Oku kwenza ii-wafers ze-GaN-on-SiC zilungele ukusetyenziswa kwamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu. I-substrate ye-SiC inceda ekususeni ubushushu obuveliswa zizixhobo ze-GaN, iphucula ukuthembeka kunye nokusebenza.

Q2: Ngaba ubukhulu beleyara ye-epitaxial bungenziwa ngokwezifiso kwizicelo ezithile?

A2:Ewe, ubukhulu beleyara ye-epitaxial bunokwenziwa ngokwezifiso ngaphakathi koluhlu1.0 µm ukuya kwi-3.5 µm, kuxhomekeke kwiimfuno zamandla kunye neefrikhwensi zesicelo sakho. Singayilungisa ubukhulu beleyara yeGaN ukuze siphucule ukusebenza kwezixhobo ezithile ezifana nee-power amplifier, iinkqubo zeRF, okanye iisekethe zefrikhwensi ephezulu.

Umbuzo 3: Yintoni umahluko phakathi kwe-4H-N, HPSI, kunye ne-4H/6H-P SiC substrates?

A3:

4H-N: I-4H-SiC ene-nitrogen isetyenziswa rhoqo kwizicelo ezisebenzisa i-frequency ephezulu ezifuna ukusebenza okuphezulu kwe-elektroniki.
I-HPSI: I-High-Purity Semi-Insulating SiC ibonelela ngokwahlukana kombane, ilungele ukusetyenziswa okufuna umbane omncinci.
4H/6H-P: Umxube we-4H kunye ne-6H-SiC olinganisela ukusebenza, obonelela ngokudibanisa ukusebenza kakuhle kunye nokuqina, ofanelekileyo kwiintlobo ngeentlobo zezixhobo ze-elektroniki zamandla.

Umbuzo 4: Ngaba ezi wafers zeGaN-on-SiC zifanelekile kwizicelo zamandla aphezulu njengezithuthi zombane kunye namandla avuselelekayo?

A4:Ewe, ii-wafer ze-GaN-on-SiC zilungele ukusetyenziswa kwamandla aphezulu njengezithuthi zombane, amandla avuselelekayo, kunye neenkqubo zoshishino. I-voltage ephezulu yokuqhekeka, ukuhanjiswa kobushushu okuphezulu, kunye nokukwazi ukuphatha amandla kwezixhobo ze-GaN-on-SiC kuzenza zikwazi ukusebenza ngokufanelekileyo kwiisekethe zokuguqula amandla ezifuna amandla kunye nokulawula.

Umbuzo 5: Ingakanani i-dislocation density eqhelekileyo yezi wafers?

A5:Uxinano lwe-dislocation lwezi wafers zeGaN-on-SiC ludla ngokuba< 1 x 10^6 cm^-2, eqinisekisa ukukhula kwe-epitaxial esemgangathweni ophezulu, inciphisa iziphene kwaye iphucula ukusebenza kunye nokuthembeka kwesixhobo.

Umbuzo 6: Ndingacela ubungakanani obuthile be-wafer okanye uhlobo lwe-SiC substrate?

A6:Ewe, sinikezela ngobukhulu be-wafer obulungiselelwe wena (100mm kunye ne-150mm) kunye neentlobo ze-SiC substrate (4H-N, HPSI, 4H/6H-P) ukuhlangabezana neemfuno ezithile zesicelo sakho. Nceda unxibelelane nathi ukuze ufumane ezinye iindlela zokwenza ngokwezifiso kunye nokuxoxa ngeemfuno zakho.

Umbuzo 7: Zisebenza njani ii-wafers zeGaN-on-SiC kwiindawo ezixineneyo?

A7:Ii-wafer zeGaN-on-SiC zilungele iimeko ezishushu kakhulu ngenxa yozinzo lwazo oluphezulu kubushushu, ukuphathwa kwamandla aphezulu, kunye nokukwazi kwazo ukusasaza ubushushu ngendlela egqwesileyo. Ezi wafer zisebenza kakuhle kwiimeko zobushushu obuphezulu, amandla aphezulu, kunye neemeko ezixhaphakileyo ezidla ngokufunyanwa kwiindawo zomoya, ukhuselo, kunye nezicelo zoshishino.

Isiphelo

IiWafers zethu zeGaN-on-SiC Epitaxial ezilungiselelwe wena zidibanisa iipropati eziphambili zeGaN kunye neSiC ukubonelela ngokusebenza okuphezulu kwizicelo ezinamandla aphezulu kunye nezicelo ezisetyenziswa rhoqo. Ngeendlela ezininzi zeSiC substrate kunye neeleya ze-epitaxial ezinokwenziwa ngokwezifiso, ezi wafers zilungele amashishini afuna ukusebenza okuphezulu, ulawulo lobushushu, kunye nokuthembeka. Nokuba zeze-elektroniki zamandla, iinkqubo zeRF, okanye izicelo zokhuselo, iiwafers zethu zeGaN-on-SiC zibonelela ngokusebenza kunye nokuguquguquka okudingayo.