Uhlobo lweSiC lweMbewu yeSiC eyenziwe ngokwezifiso iDia153/155mm ye-Power Electronics

I-Substrate yeMbewu yeSiC yohlobo lwe-N oluyi-Custom N Dia153/155mm ye-Power Electronics Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ii-substrates zembewu zeSilicon Carbide (SiC) zisebenza njengezinto ezisisiseko zee-semiconductors zesizukulwana sesithathu, ezahlulwe kukuqhuba kwazo ubushushu okuphezulu kakhulu, amandla ombane aqhekekileyo kakhulu, kunye nokuhamba okuphezulu kwee-electron. Ezi mpawu zizenza zibe yeyona nto ibalulekileyo kwii-electronics zamandla, izixhobo ze-RF, izithuthi zombane (ii-EV), kunye nokusetyenziswa kwamandla avuselelekayo. I-XKH igxile kwi-R&D kunye nemveliso yee-substrates zembewu zeSiC ezikumgangatho ophezulu, isebenzisa iindlela zokukhula kwekristale eziphambili ezifana ne-Physical Vapor Transport (PVT) kunye ne-High-Temperature Chemical Vapor Deposition (HTCVD) ukuqinisekisa umgangatho wekristale ohamba phambili kushishino.

Thumela i-imeyile kuthi

Iimbonakalo

Yazisa

I-XKH inikezela nge-substrates zembewu ye-SiC eziyi-4-intshi, eziyi-6-intshi, kunye ne-8-intshi ezine-doping ye-N-type/P-type enokwenziwa ngokwezifiso, ifikelela kumanqanaba okumelana ne-0.01-0.1 Ω·cm kunye noxinano lwe-dislocation olungaphantsi kwe-500 cm⁻², nto leyo eyenza ukuba zilungele ukuvelisa ii-MOSFET, ii-Schottky Barrier Diodes (SBDs), kunye nee-IGBTs. Inkqubo yethu yemveliso edityaniswe ngokuthe nkqo igubungela ukukhula kwekristale, ukunqunyulwa kwe-wafer, ukupolisha, kunye nokuhlolwa, kunye nomthamo wemveliso wenyanga odlula ii-wafers eziyi-5,000 ukuhlangabezana neemfuno ezahlukeneyo zamaziko ophando, abavelisi be-semiconductor, kunye neenkampani zamandla avuselelekayo.

Ukongeza, sinikezela ngezisombululo ezenziwe ngokwezifiso, eziquka:

Ukwenziwa ngokwezifiso kwe-Crystal orientation (4H-SiC, 6H-SiC)

Ukusetyenziswa kwe-doping ekhethekileyo (i-Aluminium, i-Nitrogen, i-Boron, njl.njl.)

Ukupolisha okugudileyo kakhulu (Ra < 0.5 nm)

I-XKH ixhasa ukucubungula okusekwe kwisampulu, iingcebiso zobugcisa, kunye ne-small-batch prototyping ukuze kunikezelwe izisombululo ze-SiC substrate ezilungiselelweyo.

Iiparameter zobugcisa

Isonka sembewu ye-silicon carbide
Uhlobo lwePolytype	4H
Impazamo yokujongwa komphezulu	4°ukuya<11-20>±0.5º
Ukuxhathisa	ukwenza ngokwezifiso
Ububanzi	205±0.5mm
Ubukhulu	600±50μm
Uburhabaxa	I-CMP,Ra≤0.2nm
Uxinano lweeMipayipi ezincinci	≤1 nganye/cm2
Imikrwelo	≤5, Ubude obupheleleyo ≤2 * Ububanzi
Iitships/ii-indents zomphetho	Akukho nanye
Ukumakishwa kwelaser yangaphambili	Akukho nanye
Imikrwelo	≤2, Ubude obupheleleyo ≤ Ububanzi
Iitships/ii-indents zomphetho	Akukho nanye
Iindawo zePolytype	Akukho nanye
Ukumakishwa kweleza yangasemva	1mm (ukusuka kumda ophezulu)
Umphetho	I-Chamfer
Ukupakisha	Ikhasethi yewafer eninzi

Iisubstrates zeSiC Seed - Iimpawu eziphambili

1. Iimpawu Ezimangalisayo Ezingaqhelekanga

· Ukuqhuba okuphezulu kobushushu (~490 W/m·K), kudlula kakhulu i-silicon (Si) kunye ne-gallium arsenide (GaAs), okwenza ukuba ilungele ukupholisa izixhobo ezinamandla aphezulu.

· Amandla entsimi yokuqhekeka (~3 MV/cm), okuvumela ukusebenza okuzinzileyo phantsi kweemeko ze-voltage ephezulu, okubaluleke kakhulu kwii-inverters ze-EV kunye neemodyuli zamandla zoshishino.

· I-bandgap ebanzi (3.2 eV), inciphisa ukuvuza kwamanzi kumaqondo obushushu aphezulu kwaye iphucula ukuthembeka kwesixhobo.

2. Umgangatho oPhezulu weCrystalline

· Itekhnoloji yokukhula kwe-PVT + HTCVD hybrid inciphisa iziphene ze-micropipe, igcina uxinano lwe-dislocation lungaphantsi kwe-500 cm⁻².

· I-wafer bow/warp < 10 μm kunye noburhabaxa bomphezulu i-Ra < 0.5 nm, ukuqinisekisa ukuhambelana ne-lithography echanekileyo kakhulu kunye neenkqubo zokubeka i-thin-film.

3. Iindlela ezahlukeneyo zokusebenzisa i-Doping

·Uhlobo lwe-N (olune-nitrogen): Ukumelana okuphantsi (0.01-0.02 Ω·cm), olulungiselelwe izixhobo ze-RF ezisebenzisa i-frequency ephezulu.

· Uhlobo lwe-P (olufakwe kwi-aluminium): Lulungele ii-MOSFET ezinamandla kunye nee-IGBT, nto leyo ephucula ukuhambahamba kwenkampani.

· I-SiC ethintela ubushushu obuphantsi (iVanadium-doped): I-Resistivity > 10⁵ Ω·cm, yenzelwe iimodyuli zangaphambili ze-5G RF.

4. Uzinzo lweNdalo

· Ukumelana nobushushu obuphezulu (>1600°C) kunye nobunzima bemitha, okufanelekileyo kwi-aerospace, izixhobo zenyukliya, nakwezinye iindawo ezingaqhelekanga.

Iisubstrates zeSiC Seed - Usetyenziso oluPhambili

1. Izixhobo zombane zamandla

· Iimoto zombane (ii-EV): Zisetyenziswa kwiitshaja ezikwibhodi (ii-OBC) nakwii-inverters ukuphucula ukusebenza kakuhle nokunciphisa iimfuno zolawulo lobushushu.

· Iinkqubo zamandla oshishino: Ziphucula ii-inverters ze-photovoltaic kunye neegridi ezikrelekrele, zifikelela kwi-99% yokusebenza kakuhle kokuguqulwa kwamandla.

2. Izixhobo zeRF

· Izitishi zeSiseko ze-5G: Ii-substrates ze-SiC ezizi-semi-insulating zivumela ii-amplifier zamandla ze-GaN-on-SiC RF, ezixhasa ukuhanjiswa kwesignali enamandla aphezulu.

Unxibelelwano lweSatellite: Iimpawu eziphantsi zokulahleka ziyenza ifaneleke kwizixhobo ze-millimeter-wave.

3. Ugcino lwamandla ahlaziyekayo kunye namandla

· Amandla elanga: IiSiC MOSFET zonyusa ukusebenza kakuhle kokuguqulwa kweDC-AC ngelixa zinciphisa iindleko zenkqubo.

· Iinkqubo zokugcina amandla (ESS): Zilungisa ii-converter ezibhekisa kwicala elinye kwaye zandisa ubomi bebhetri.

4. Ukhuselo kunye neenqwelo-moya

· Iinkqubo zeRadar: Izixhobo zeSiC ezinamandla aphezulu zisetyenziswa kwiiradar ze-AESA (Active Electronically Scanned Array).

· Ulawulo lwaMandla eSikhepheni: Ii-substrates ze-SiC ezingamelani nemitha zibalulekile kwimisebenzi yasemajukujukwini.

5. Uphando kunye neeTekhnoloji ezisakhulayo

· I-Quantum Computing: I-SiC ecocekileyo kakhulu ivumela uphando lwe-spin qubit.

· Izinzwa zobushushu obuphezulu: Zisetyenziswa ekuphononongeni ioyile kunye nokubeka esweni i-reactor yenyukliya.

Iisubstrates zeSiC Seed - Iinkonzo zeXKH

1. Iingenelo zeCandelo loNikezelo

· Ukwenziwa okudityaniswe ngokuthe nkqo: Ulawulo olupheleleyo ukusuka kumgubo we-SiC ococekileyo kakhulu ukuya kwii-wafers ezigqityiweyo, kuqinisekisa amaxesha okukhokela eeveki ezi-4-6 kwiimveliso eziqhelekileyo.

· Ukhuphiswano ngeendleko: Uqoqosho olusemgangathweni luvumela amaxabiso aphantsi nge-15-20% kunalawo akhuphisana nawo, ngenkxaso yeZivumelwano zeXesha elide (ii-LTA).

2. Iinkonzo zokwenza ngokwezifiso

· Ukujongwa kwekristale: 4H-SiC (esemgangathweni) okanye 6H-SiC (izicelo ezikhethekileyo).

· Ukulungiswa kwe-doping: Iipropati zohlobo lwe-N/uhlobo lwe-P/uhlobo oluyi-semi-insulation ezilungiselelwe wena.

· Ukupholisha okuphucukileyo: Ukupholisha kwe-CMP kunye nonyango lomphezulu olulungele i-epi (Ra < 0.3 nm).

3. Inkxaso yoBugcisa

· Uvavanyo lwesampulu yasimahla: Lubandakanya iingxelo zokulinganisa i-XRD, i-AFM, kunye neHall.

· Uncedo lokulinganisa isixhobo: Ixhasa ukukhula kwe-epitaxial kunye nokwenza ngcono uyilo lwesixhobo.

4. Impendulo ekhawulezileyo

· Iiprototypes ezinomthamo ophantsi: Ubuncinane be-odolo yee-wafers ezili-10, eziziswa kwiiveki ezi-3.

· Uthutho lwehlabathi: Intsebenziswano ne-DHL kunye ne-FedEx yokuhambisa izinto kwindlu ngendlu.

5. Uqinisekiso loMgangatho

· Ukuhlolwa kwenkqubo epheleleyo: Kugubungela i-X-ray topography (XRT) kunye nohlalutyo loxinano lweempazamo.

· Iziqinisekiso zamazwe ngamazwe: Ziyahambelana nemigangatho ye-IATF 16949 (yeemoto) kunye nemigangatho ye-AEC-Q101.

Isiphelo

Ii-substrates zembewu ze-XKH ze-SiC zigqwesile kumgangatho wekristale, uzinzo lwekhonkco lokubonelela, kunye nokuguquguquka kokwenza ngokwezifiso, zikhonza izixhobo ze-elektroniki zamandla, unxibelelwano lwe-5G, amandla avuselelekayo, kunye netekhnoloji yokuzikhusela. Siyaqhubeka nokuphucula itekhnoloji yemveliso ye-SiC ye-intshi ezi-8 ukuze siqhubele phambili ishishini le-semiconductor yesizukulwana sesithathu.

Ngaphambili: Ipleyiti/itreyi ye-ceramic ye-SiC ye-4 intshi ye-6 intshi ye-wafer holder ye-ICP

Okulandelayo: Iisubstrates zeCrystal zeSiC Seed ezenziwe ngokwezifiso zeDia 205/203/208 4H-N Type for Optical Communications