Isiko N Uhlobo lweSiC yeMbewu Substrate Dia153/155mm yoMbane woMbane

I-Silicon Carbide (i-SiC) i-substrates yembewu isebenza njengesiseko se-semiconductors yesizukulwana sesithathu, esahlulwe ngokugqithiswa kwe-thermal conductivity ephezulu, ukuchithwa okuphezulu kwamandla ombane, kunye nokuhamba kwe-electron ephezulu. Ezi zakhiwo zibenza zibe yimfuneko kumbane wombane, izixhobo zeRF, izithuthi zombane (EVs), kunye nokusetyenziswa kwamandla ahlaziyekayo. I-XKH igxile kwi-R&D kunye nokuveliswa kwee-substrates zembewu ye-SiC ekumgangatho ophezulu, isebenzisa iindlela eziphambili zokukhula kwekristale ezifana ne-Physical Vapor Transport (PVT) kunye ne-High-Temperature Chemical Vapor Deposition (HTCVD) ukuqinisekisa umgangatho wecrystalline ohamba phambili kwishishini.

I-XKH inikezela nge-4-intshi, i-6-intshi, kunye ne-8-intshi ye-SiC yembewu substrates ene-customizable N-type/P-type doping, ukuphumeza amanqanaba okumelana ne-0.01-0.1 Ω·cm kunye noxinzelelo lwe-dislocation ngaphantsi kwe-500 cm⁻², ezenza zibe zilungele ukuvelisa i-MOSFETs, i-Schottky Barriers Districts Inkqubo yethu yemveliso edityanisiweyo ngokuthe nkqo igubungela ukukhula kwekristale, ukunqunyulwa kwewafer, ukupolisha, kunye nokuhlolwa, kunye nomthamo wenyanga wemveliso odlula ama-5,000 eewafa ukuze kuhlangatyezwane neemfuno ezahlukeneyo zamaziko ophando, abavelisi be-semiconductor, kunye neenkampani zamandla avuselelekayo.

Ukongeza, sibonelela ngezisombululo eziqhelekileyo, ezibandakanya:

Ukuqhelaniswa neCrystal ngokwezifiso (4H-SiC, 6H-SiC)

I-doping ekhethekileyo (iAluminiyam, iNitrogen, iBoron, njl.

Ukugudisa okugudileyo (Ra <0.5 nm)

I-XKH ixhasa ukusetyenzwa kwesampulu esekwe kwisampulu, ukubonisana nobugcisa, kunye neprototyping yebhetshi encinci ukuhambisa izisombululo ze-SiC substrate eziphuculweyo.