I-AlN-on-NPSS Wafer: I-Aluminiyam ye-Nitride eSebenza ngokuPhezulu yoMsebenzi kwiSubstrate yeSapphire engaguquguqukiyo kubushushu obuphezulu, amandla amakhulu, kunye nezicelo zeRF

I-AlN-on-NPSS Wafer: I-Aluminiyam ye-Nitride eSebenza ngokuPhezulu yoMsebenzi kwiSubstrate yeSapphire engaguquguqukiyo yoBubushushu obuphezulu, amandla amakhulu, kunye ne-RF Applications Faatured Image

Inkcazelo emfutshane:

I-wafer ye-AlN-on-NPSS idibanisa i-aluminium nitride ye-nitride (i-AlN) ephezulu yokusebenza kunye ne-substrate yesafire engapholisiweyo (NPSS) ukunika isisombululo esifanelekileyo kwi-high-temperature, amandla aphezulu, kunye ne-radio-frequency (RF) izicelo. Indibaniselwano eyodwa ye-AlN's i-thermal conductivity ekhethekileyo kunye neepropathi zombane, kunye ne-substrate yamandla agqwesileyo omatshini, yenza le wafer ibe yinto ekhethwayo kwizicelo ezifunwayo ezifana ne-electronics yamandla, izixhobo eziphezulu, kunye nezinto ezibonakalayo. Ngokuchithwa kobushushu obugqwesileyo, ilahleko ephantsi, kunye nokuhambelana neendawo ezinobushushu obuphezulu, le wafer yenza ukuba kuphuhliswe izixhobo zesizukulwana esilandelayo ngokusebenza okuphezulu.

Thumela i-imeyile kuthi

Iimbonakalo

High-Performance AlN Layer: I-Aluminium Nitride (AlN) iyaziwa ngokuba yiyohigh conductivity thermal(~200 W/m·K),ibhanti ebanzi, kwayeamandla ombane aphezulu, iyenza ibe yinto efanelekileyoamandla phezulu, high-frequency, kwayeubushushu obuphezuluizicelo.

ISapphire Substrate engagqwaliswanga (NPSS): Isafire engagudiswanga ibonelela aisebenza kakuhle emalini, yomelele ngoomatshiniisiseko, ukuqinisekisa isiseko esizinzile sokukhula kwe-epitaxial ngaphandle kobunzima bepolisha yomphezulu. Iipropathi ezigqwesileyo zoomatshini zeNPSS ziyenza yomelele kwiimeko ezingqongileyo ezinomngeni.

Ukuzinza okuphezulu kweThermal: I-wafer ye-AlN-on-NPSS inokumelana nokuguquguquka okugqithisileyo kobushushu, iyenze ilungele ukusetyenziswaamandla e-elektroniki, iinkqubo zemoto, ii-LEDs, kwayeusetyenziso lwe-opticalezifuna ukusebenza okuzinzileyo kwiimeko eziphezulu zobushushu.

Ukugqunywa koMbane: I-AlN ineempawu ezibalaseleyo zokugquma umbane, iyenza iphelele kwizicelo aphoukwahlulwa kombaneibalulekile, kuqukaizixhobo RFkwayeii-elektroniki ze-microwave.

Ukutshatyalaliswa kobushushu obuPhezulu: Ngomgangatho ophezulu we-thermal conductivity, i-AlN layer iqinisekisa ukutshatyalaliswa kokushisa okusebenzayo, okuyimfuneko ekugcineni ukusebenza kunye nobude bezixhobo ezisebenza phantsi kwamandla aphezulu kunye nokuphindaphinda.

Iiparamitha zobuGcisa

Ipharamitha	Inkcazo
I-Wafer Diameter	2-intshi, 4-intshi (ubukhulu besiqhelo buyafumaneka)
Uhlobo lweSubstrate	ISapphire Substrate engagqwaliswanga (NPSS)
Ukutyeba koMaleko we-AlN	2µm ukuya kwi-10µm (inokwenziwa ngokwezifiso)
Ukutyeba kweSubstrate	430µm ± 25µm (ye-intshi ezi-2), 500µm ± 25µm (ye-intshi ezi-4)
I-Thermal Conductivity	200 W/m·K
Ukuxhathisa koMbane	Ukufakwa okuphezulu, okufanelekileyo kwizicelo zeRF
Uburhabaxa boMphezulu	Ra ≤ 0.5µm (ye-AlN umaleko)
Ubunyulu bezinto eziphathekayo	Ukucoceka okuphezulu kwe-AlN (99.9%)
Umbala	Mhlophe/Ocinyiweyo-Mhlophe (I-AlN umaleko kunye nombala okhanyayo we-NPSS substrate)
Wafer Warp	< 30µm (eqhelekileyo)
Uhlobo lweDoping	I-Un-doped (inokwenziwa ngokwezifiso)

Usetyenziso

II-AlN-on-NPSS waferyenzelwe iintlobo ngeentlobo zezicelo ezikumgangatho ophezulu kumashishini amaninzi:

I-Electronics enamandla amakhulu: I-AlN layer's high conductivity thermal conductivity kunye ne-insulating properties yenza ukuba ibe yinto efanelekileyotransistors amandla, abalungisi, kwayeamandla ICsisetyenziswe kwiiimoto, ishishini, kwayeumoya ovuselelekayoiinkqubo.

I-Radio-Frequency (RF) Amacandelo: Iipropathi ezigqwesileyo zokugquma umbane ze-AlN, ezidityaniswa nelahleko ephantsi, yenza ukuba kuvelisweRF transistors, Ii-HEMTs (Ii-Electron-Mobility Transistors), kunye nezinyeamacandelo microwaveezisebenza ngokufanelekileyo kumaza aphezulu kunye namanqanaba ombane.

Izixhobo zokujonga: Ii-wafers ze-AlN-on-NPSS zisetyenziswa kwilaser diodes, ii-LEDs, kwayeii-photodetectors, apho ihigh conductivity thermalkwayeukomelela koomatshinizibalulekile ukugcina ukusebenza ixesha elide lobomi.

Izinzwa zobushushu obuphezulu: Ukukwazi kwe-wafer ukumelana nobushushu obugqithisileyo kuyenza ifanelekeabenzi bobushushukwayeukubeka iliso kokusingqongileyokumashishini afanai-aerospace, iimoto, kwayeioli kunye negesi.

Ukupakishwa kweSemiconductor: Isetyenziswa kwi abasasaza ubushushukwayeiileya zolawulo lwe-thermalkwiinkqubo zokupakisha, ukuqinisekisa ukuthembeka kunye nokusebenza kakuhle kwee-semiconductors.

Q&A

Umbuzo: Yeyiphi inzuzo ephambili yee-AlN-on-NPSS wafers ngaphezu kwezixhobo zemveli ezifana nesilicon?

A: Eyona nto iluncedo yi-AlNhigh conductivity thermal, okuvumela ukuba uchithe ngokufanelekileyo ukushisa, okwenza kube yinto efanelekileyoamandla phezulukwayeizicelo eziphezulu-frequencyapho ulawulo lobushushu lubalulekile. Ukongeza, i-AlN ine-ibhanti ebanzikwaye kuhle kakhuluukugquma kombane, iyenza ilunge ngakumbi ukusetyenziswa kuyoRFkwayeizixhobo ze-microwavexa kuthelekiswa nesilicon yemveli.

Umbuzo: Ngaba umaleko we-AlN kwii-wafers ze-NPSS zinokwenziwa ngokwezifiso?

A: Ewe, umaleko we-AlN unokwenziwa ngokwemiqathango yobukhulu (ukusuka kwi-2µm ukuya kwi-10µm okanye ngaphezulu) ukuhlangabezana neemfuno ezithile zesicelo sakho. Sikwanikezela ngokwezifiso malunga nohlobo lwe-doping (uhlobo lwe-N okanye uhlobo lwe-P) kunye neengqimba ezongezelelweyo zemisebenzi ekhethekileyo.

Q: Sesiphi isicelo esiqhelekileyo sale wafer kushishino lweemoto?

A: Kushishino lweemoto, ii-wafers ze-AlN-on-NPSS ziqhele ukusetyenziswa kwiamandla e-elektroniki, Iinkqubo zokukhanyisa i-LED, kwayeabenzi bobushushu. Banikezela ngolawulo oluphezulu lwe-thermal kunye nokufakelwa kombane, okuyimfuneko kwiinkqubo eziphezulu ezisebenza phantsi kweemeko zokushisa ezahlukeneyo.