I-AlN-on-NPSS Wafer: Umaleko we-aluminium nitride osebenza kakuhle kwi-substrate ye-sapphire engacociweyo kwizicelo zobushushu obuphezulu, amandla aphezulu, kunye ne-RF

Inkcazo emfutshane:

I-AlN-on-NPSS wafer idibanisa umaleko we-aluminium nitride (AlN) osebenza kakuhle kunye ne-non-polished sapphire substrate (NPSS) ukuze inike isisombululo esifanelekileyo kwizicelo zobushushu obuphezulu, amandla aphezulu, kunye ne-radio-frequency (RF). Indibaniselwano eyahlukileyo ye-AlN's thermal conductivity kunye neempawu zombane, kunye namandla abalaseleyo oomatshini, yenza le wafer ibe lukhetho olukhethwayo kwizicelo ezifuna amandla ezifana ne-electronics yamandla, izixhobo ze-high-frequency, kunye nezixhobo ze-optical. Ngokuchithwa kobushushu okugqwesileyo, ilahleko ephantsi, kunye nokuhambelana neendawo zobushushu obuphezulu, le wafer ivumela uphuhliso lwezixhobo zesizukulwana esilandelayo ezisebenza kakuhle kakhulu.

Thumela i-imeyile kuthi

Iimbonakalo

Ileya ye-AlN eSebenza ngokuPhezuluI-Aluminium Nitride (AlN) yaziwa ngokuba nayoukuhanjiswa kobushushu obuphezulu(~200 W/m·K),i-bandgap ebanzikunyei-voltage ephezulu yokuqhekeka, nto leyo eyenza ukuba ibe yinto efanelekileyoamandla phezulu, i-frequency ephezulukunyeubushushu obuphezuluizicelo.

I-Substrate yeSapphire engakhazimlishwanga (NPSS): I-sapphire engakhazimliswanga inikaisebenza kakuhle emalini, yomelele ngoomatshiniisiseko, ukuqinisekisa isiseko esizinzileyo sokukhula kwe-epitaxial ngaphandle kobunzima bokupholisha umphezulu. Iimpawu ezintle zoomatshini ze-NPSS ziyenza ihlale ixesha elide kwiimeko ezinzima.

Uzinzo oluphezulu lobushushu: I-AlN-on-NPSS wafer inokumelana nokuguquguquka okukhulu kobushushu, nto leyo eyenza ukuba ifaneleke ukusetyenziswa kwiizixhobo zombane zamandla, iinkqubo zeemoto, Ii-LEDkunyeizicelo ze-opticalezifuna ukusebenza okuzinzileyo kwiimeko zobushushu obuphezulu.

Ukufakwa kombane: I-AlN ineempawu ezibalaseleyo zokukhusela umbane, nto leyo eyenza ukuba ilungele ukusetyenziswa aphoukwahlulwa kombanekubaluleke kakhulu, kuqukaIzixhobo zeRFkwayeizixhobo ze-elektroniki ze-microwave.

Ukusasazwa kobushushu okuphezulu: Ngombane ophezulu wokushisa, umaleko we-AlN uqinisekisa ukuchithwa kobushushu okusebenzayo, okubalulekileyo ekugcineni ukusebenza kunye nobude bexesha lezixhobo ezisebenza phantsi kwamandla aphezulu kunye nemvamisa.

Iiparameters zobugcisa

Ipharamitha	Inkcazo
Ububanzi beWafer	Ii-intshi ezi-2, ii-intshi ezi-4 (ubukhulu obuqhelekileyo buyafumaneka)
Uhlobo lwe-substrate	I-Substrate yeSapphire engakhazimlishwanga (NPSS)
Ubukhulu beLeya ye-AlN	2µm ukuya kwi-10µm (ingenziwa ngokwezifiso)
Ubukhulu be-substrate	430µm ± 25µm (kwii-intshi ezi-2), 500µm ± 25µm (kwii-intshi ezi-4)
Ukuqhuba kweThermal	200 W/m·K
Ukumelana nombane	Ubushushu obuphezulu, obufanelekileyo kwizicelo zeRF
Uburhabaxa bomphezulu	I-Ra ≤ 0.5µm (yomaleko we-AlN)
Ubumsulwa bezinto ezibonakalayo	I-AlN ecocekileyo kakhulu (99.9%)
Umbala	Mhlophe/Awumhlophe (umaleko we-AlN onesiseko se-NPSS esinombala okhanyayo)
I-Wafer Warp	< 30µm (eqhelekileyo)
Uhlobo lokusebenzisa iziyobisi	Ayifakwanga idosi (ingenziwa ngokwezifiso)

Izicelo

II-AlN-on-NPSS waferyenzelwe iintlobo ngeentlobo zezicelo zokusebenza okuphezulu kumashishini aliqela:

Izixhobo zombane ezinamandla aphezulu: Ukuqhuba okuphezulu kobushushu kunye neempawu zokukhusela ubushushu ze-AlN layer zenza ukuba ibe yinto efanelekileyo kakhuluii-transistors zamandla, izinto zokulungisa izintokunyeii-IC zamandlaisetyenziswa kwiiimoto, imbonikunyeumoya ovuselelekayoiinkqubo.

Izixhobo zeRadio-Frequency (RF): Iipropati zokukhusela umbane ezibalaseleyo ze-AlN, kunye nokulahleka kwayo okuphantsi, zivumela ukuveliswaIi-transistors zeRF, Ii-HEMT (iiTransistors ze-High-Electron-Mobility)kunye nezinyeizinto ze-microwaveezisebenza ngokufanelekileyo kwiifrikhwensi eziphezulu kunye namanqanaba ombane.

Izixhobo zokubonaIiwafer ze-AlN-on-NPSS zisetyenziswa kwiiidiode zelaser, Ii-LEDkunyeii-photodetectors, aphoukuhanjiswa kobushushu obuphezulukwayeukomelela koomatshinizibalulekile ekugcineni ukusebenza ixesha elide.

Izinzwa zobushushu obuphezulu: Ukukwazi kwe-wafer ukumelana nobushushu obugqithisileyo kwenza ukuba ifanelekeizixhobo zokuvavanya ubushushukwayeukubeka esweni okusingqongileyokumashishini afanainqwelo-moya, iimotokunyeioyile kunye negesi.

Ukupakishwa kweSemiconductor: Isetyenziswa kwi izisasazi zobushushukwayeiileya zolawulo lobushushukwiinkqubo zokupakisha, ukuqinisekisa ukuthembeka nokusebenza kakuhle kwee-semiconductors.

Imibuzo neempendulo

Q: Yintoni inzuzo ephambili yee-wafers ze-AlN-on-NPSS ngaphezu kwezinto zemveli ezifana ne-silicon?

A: Eyona nzuzo iphambili yi-AlN'sukuhanjiswa kobushushu obuphezulu, nto leyo eyivumela ukuba ikhuphe ubushushu ngokufanelekileyo, nto leyo eyenza ukuba ilungele ukusetyenziswaamandla phezulukwayeizicelo ezisetyenziswa rhoqoapho ulawulo lobushushu lubaluleke kakhulu. Ukongeza, i-AlN ine-i-bandgap ebanzikwaye igqwesileubushushu bombane, okwenza ukuba ibe ngcono ukusetyenziswa kwiRFkwayeizixhobo ze-microwavexa kuthelekiswa nesilicon yendabuko.

Q: Ngaba umaleko we-AlN kwii-NPSS wafers ungenziwa ngokwezifiso?

A: Ewe, umaleko we-AlN unokwenziwa ngokwezifiso ngokobukhulu (ukusuka kwi-2µm ukuya kwi-10µm nangaphezulu) ukuhlangabezana neemfuno ezithile zesicelo sakho. Sikwabonelela ngokwezifiso ngokweentlobo ze-doping (uhlobo lwe-N okanye uhlobo lwe-P) kunye nezinye iileya ezongezelelweyo kwimisebenzi ekhethekileyo.

Q: Yeyiphi indlela eqhelekileyo yokusebenzisa esi sixhobo se-wafer kwishishini leemoto?

A: Kwishishini leemoto, ii-wafers ze-AlN-on-NPSS zisetyenziswa kakhulu kwiizixhobo zombane zamandla, Iinkqubo zokukhanyisa ze-LEDkunyeizixhobo zokuvavanya ubushushuZibonelela ngolawulo oluphezulu lobushushu kunye nokufakelwa kombane, nto leyo ebalulekileyo kwiinkqubo ezisebenzayo kakhulu ezisebenza phantsi kweemeko zobushushu ezahlukeneyo.