I-wafer ye-SiC ye-8intshi ye-Production grade grade 4H-N SiC substrate
Le theyibhile ilandelayo ibonisa iinkcukacha zeewafers zethu ze-SiC ze-8inch:
| Iinkcazo ze-SiC DSP ze-8intshi N | |||||
| Inombolo | Into | Iyunithi | Imveliso | Uphando | Idemu |
| 1: iiparameter | |||||
| 1.1 | i-polytype | -- | 4H | 4H | 4H |
| 1.2 | ukujongwa komphezulu | ° | <11-20>4±0.5 | <11-20>4±0.5 | <11-20>4±0.5 |
| 2: Ipharamitha yombane | |||||
| 2.1 | i-dopant | -- | I-nitrogen yohlobo lwe-n | I-nitrogen yohlobo lwe-n | I-nitrogen yohlobo lwe-n |
| 2.2 | ukumelana nokuxhathisa | ohm ·cm | 0.015~0.025 | 0.01~0.03 | NA |
| 3: Ipharamitha yoomatshini | |||||
| 3.1 | ububanzi | mm | 200±0.2 | 200±0.2 | 200±0.2 |
| 3.2 | ubukhulu | μm | 500±25 | 500±25 | 500±25 |
| 3.3 | Ukujongwa kweNotch | ° | [1- 100]±5 | [1- 100]±5 | [1- 100]±5 |
| 3.4 | Ubunzulu beNotshi | mm | 1~1.5 | 1~1.5 | 1~1.5 |
| 3.5 | I-LTV | μm | ≤5 (10mm * 10mm) | ≤5 (10mm * 10mm) | ≤10(10mm*10mm) |
| 3.6 | I-TTV | μm | ≤10 | ≤10 | ≤15 |
| 3.7 | Ukuqubuda | μm | -25~25 | -45~45 | -65~65 |
| 3.8 | I-Warp | μm | ≤30 | ≤50 | ≤70 |
| 3.9 | I-AFM | nm | Ra≤0.2 | Ra≤0.2 | Ra≤0.2 |
| 4: Ulwakhiwo | |||||
| 4.1 | uxinano lweemibhobho ezincinci | nganye/cm2 | ≤2 | ≤10 | ≤50 |
| 4.2 | umxholo wesinyithi | iiathom/cm2 | ≤1E11 | ≤1E11 | NA |
| 4.3 | I-TSD | nganye/cm2 | ≤500 | ≤1000 | NA |
| 4.4 | I-BPD | nganye/cm2 | ≤2000 | ≤5000 | NA |
| 4.5 | I-TED | nganye/cm2 | ≤7000 | ≤10000 | NA |
| 5. Umgangatho wangaphambili | |||||
| 5.1 | ngaphambili | -- | Si | Si | Si |
| 5.2 | ukugqitywa komphezulu | -- | I-CMP ye-Si-face | I-CMP ye-Si-face | I-CMP ye-Si-face |
| 5.3 | isuntswana | isitya/isitya esincinci | ≤100 (ubukhulu ≥0.3μm) | NA | NA |
| 5.4 | ukukrwela | isitya/isitya esincinci | ≤5, Ubude obupheleleyo ≤200mm | NA | NA |
| 5.5 | Umphetho iitships/iindents/iicracks/amabala/ukungcola | -- | Akukho nanye | Akukho nanye | NA |
| 5.6 | Iindawo zePolytype | -- | Akukho nanye | Indawo ≤10% | Indawo ≤30% |
| 5.7 | uphawu olungaphambili | -- | Akukho nanye | Akukho nanye | Akukho nanye |
| 6: Umgangatho wangasemva | |||||
| 6.1 | ukugqiba ngasemva | -- | I-C-face MP | I-C-face MP | I-C-face MP |
| 6.2 | ukukrwela | mm | NA | NA | NA |
| 6.3 | Umgca weziphene zangasemva iitships/ii-indents | -- | Akukho nanye | Akukho nanye | NA |
| 6.4 | Uburhabaxa bomqolo | nm | I-Ra≤5 | I-Ra≤5 | I-Ra≤5 |
| 6.5 | Ukumakisha ngasemva | -- | I-Notch | I-Notch | I-Notch |
| 7:umphetho | |||||
| 7.1 | umphetho | -- | I-Chamfer | I-Chamfer | I-Chamfer |
| 8: Iphakheji | |||||
| 8.1 | ukupakisha | -- | Ilungele i-Epi ene-vacuum ukupakisha | Ilungele i-Epi ene-vacuum ukupakisha | Ilungele i-Epi ene-vacuum ukupakisha |
| 8.2 | ukupakisha | -- | I-multi-wafer ukupakishwa kwekhasethi | I-multi-wafer ukupakishwa kwekhasethi | I-multi-wafer ukupakishwa kwekhasethi |
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