8intshi iSiC Production ibakala wafer 4H-N SiC substrate

8intshi SiC ibakala Production wafer 4H-N SiC substrate Featured Umfanekiso

Inkcazelo emfutshane:

I-8-intshi ye-SiC substrates isetyenziselwa izixhobo zombane eziphezulu, ezifana ne-MOSFETs yamandla (i-Metal Oxide Semiconductor Field Effect Transistors), i-Schottky diodes kunye nezinye izixhobo ze-semiconductor zamandla.

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Le theyibhile ilandelayo ibonisa ukucaciswa kwee-wafers zethu ze-SiC ze-8inch:

8inch N-uhlobo lweSiC DSP Specs
Inani	Into	Iyunithi	Imveliso	Uphando	Dummy
1:iparamitha
1.1	i-polytype	--	4H	4H	4H
1.2	ukuqhelaniswa nomphezulu	°	<11-20>4±0.5	<11-20>4±0.5	<11-20>4±0.5
2:Iparamitha yombane
2.1	dopant	--	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni	n-uhlobo lweNitrojeni
2.2	ukumelana	ohm ·cm	0.015~0.025	0.01~0.03	NA
3:Mechanical parameter
3.1	ububanzi	mm	200±0.2	200±0.2	200±0.2
3.2	ubukhulu	μm	500±25	500±25	500±25
3.3	Ukuqhelaniswa nenotshi	°	[1- 100] ±5	[1- 100] ±5	[1- 100] ±5
3.4	Ubunzulu beNotshi	mm	1~1.5	1~1.5	1~1.5
3.5	LTV	μm	≤5(10mm*10mm)	≤5(10mm*10mm)	≤10(10mm*10mm)
3.6	TTV	μm	≤10	≤10	≤15
3.7	Ukuqubuda	μm	-25~25	-45~45	-65~65
3.8	I-Wap	μm	≤30	≤50	≤70
3.9	AFM	nm	Ra≤0.2	Ra≤0.2	Ra≤0.2
4:Isakhiwo
4.1	ukuxinana kwemibhobho	uya/cm2	≤2	≤10	≤50
4.2	umxholo wesinyithi	iiathom/cm2	≤1E11	≤1E11	NA
4.3	TSD	uya/cm2	≤500	≤1000	NA
4.4	I-BPD	uya/cm2	≤2000	≤5000	NA
4.5	TED	uya/cm2	≤7000	≤10000	NA
5.Umgangatho wangaphambili
5.1	ngaphambili	--	Si	Si	Si
5.2	umphezulu wokugqiba	--	Si-ubuso CMP	Si-ubuso CMP	Si-ubuso CMP
5.3	isuntswana	isitya/isiqwengana	≤100(ubukhulu≥0.3μm)	NA	NA
5.4	umkrwelo	isitya/isiqwengana	≤5, UBude buBonke≤200mm	NA	NA
5.5	Edge iitshiphusi/iziindenti/iintanda/amabala/ungcoliseko	--	Akukho nanye	Akukho nanye	NA
5.6	Iindawo zePolytype	--	Akukho nanye	Indawo ≤10%	Indawo ≤30%
5.7	uphawu lwangaphambili	--	Akukho nanye	Akukho nanye	Akukho nanye
6:Umgangatho wasemva
6.1	emva kokugqiba	--	C-ubuso MP	C-ubuso MP	C-ubuso MP
6.2	umkrwelo	mm	NA	NA	NA
6.3	Umqolo uneziphene edge iitshiphusi/iindidi	--	Akukho nanye	Akukho nanye	NA
6.4	Umqolo uburhabaxa	nm	Ra≤5	Ra≤5	Ra≤5
6.5	Ukumakisha ngasemva	--	Inotshi	Inotshi	Inotshi
7: edge
7.1	edge	--	Chamfer	Chamfer	Chamfer
8:Ipakethi
8.1	ukupakishwa	--	I-Epi-ilungile kunye ne-vacuum ukupakishwa	I-Epi-ilungile kunye ne-vacuum ukupakishwa	I-Epi-ilungile kunye ne-vacuum ukupakishwa
8.2	ukupakishwa	--	I-Multi-wafer ukupakishwa kweekhasethi	I-Multi-wafer ukupakishwa kweekhasethi	I-Multi-wafer ukupakishwa kweekhasethi