I-wafer ye-SiC Epitaxiy eyi-6intshi N/P yamkelwe ngokwezifiso

Inkcazo emfutshane:

ibonelela ngeenkonzo ze-epitaxial wafer kunye ne-epitaxial foundry ze-4, 6, 8 intshi ze-silicon carbide kunye ne-epitaxial foundry, imveliso (600V ~ 3300V) izixhobo zamandla kuquka i-SBD, i-JBS, i-PiN, i-MOSFET, i-JFET, i-BJT, i-GTO, i-IGBT njalo njalo.

Singabonelela ngee-wafer ze-SiC epitaxial ze-intshi ezi-4 kunye nezi-intshi ezi-6 zokwenza izixhobo zamandla kuquka i-SBD JBS PiN MOSFET JFET BJT GTO kunye ne-IGBT ukusuka kwi-600V ukuya kwi-3300V


Iimbonakalo

Inkqubo yokulungiselela i-silicon carbide epitaxial wafer yindlela esebenzisa iteknoloji yeChemical Vapor Deposition (CVD). Le ilandelayo yimigaqo-nkqubo yobugcisa efanelekileyo kunye namanyathelo enkqubo yokulungiselela:

Umgaqo wobugcisa:

Ukususwa koMphunga weKhemikhali: Xa kusetyenziswa igesi yezinto eziluhlaza kwisigaba segesi, phantsi kweemeko ezithile zokusabela, iyabola ize ibekwe kwisiseko sendawo ukuze yenze ifilimu encinci oyifunayo.

Impendulo yesigaba segesi: Ngokusebenzisa i-pyrolysis okanye i-cracking reaction, iigesi ezahlukeneyo zezinto ezikrwada kwisigaba segesi zitshintshwa ngokweekhemikhali kwigumbi lempendulo.

Amanyathelo enkqubo yokulungiselela:

Unyango lwe-substrate: I-substrate ihlanjwa kwaye inyangwa ngaphambi kokuba ibekwe ukuze kuqinisekiswe umgangatho kunye nokuqaqamba kwe-epitaxial wafer.

Ukulungisa ii-reaction chamber: lungisa ubushushu, uxinzelelo kunye nesantya sokuhamba kwe-reaction chamber kunye nezinye iiparameter ukuqinisekisa uzinzo kunye nolawulo lweemeko ze-reaction.

Ubonelelo lwezinto ezikrwada: bonelela ngezinto ezikrwada zegesi ezifunekayo kwigumbi lokusabela, uxuba kwaye ulawule isantya sokuhamba njengoko kufuneka.

Inkqubo yokusabela: Ngokufudumeza igumbi lokusabela, i-feedstock yegesi ifumana i-chemical reaction kwigumbi ukuze ivelise idiphozithi efunekayo, oko kukuthi, ifilimu ye-silicon carbide.

Ukuphola nokukhupha izinto: Ekupheleni kwempendulo, ubushushu buyehliswa kancinci kancinci ukuze buphole kwaye buqinise iidipozithi kwigumbi lempendulo.

Ukuqhoboshelwa kunye nokucutshungulwa emva kwe-epitaxial wafer: i-epitaxial wafer egciniweyo iyaqhoboshelwa kwaye icutshungulwe emva kwe-episode ukuphucula iimpawu zayo zombane kunye nezokukhanya.

Amanyathelo athile kunye neemeko zenkqubo yokulungiselela i-silicon carbide epitaxial wafer zinokwahluka ngokuxhomekeke kwizixhobo ezithile kunye neemfuno. Oku kungasentla kukuhamba kwenkqubo ngokubanzi kunye nomgaqo, ukusebenza okuthile kufuneka kulungiswe kwaye kuphuculwe ngokwemeko yokwenyani.

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