I-6inch SiC Epitaxiy wafer N/P uhlobo lwamkele olulungiselelweyo

I-6inch SiC Epitaxiy wafer N/P uhlobo lwamkele olulungiselelwe uMfanekiso obonisiweyo

Inkcazelo emfutshane:

i ukubonelela nge-4, 6, 8 intshi yesilicon carbide epitaxial wafer kunye neenkonzo ze-epitaxial Foundry, imveliso (600V ~ 3300V) izixhobo zamandla eziquka i-SBD, i-JBS, i-PiN, i-MOSFET, i-JFET, i-BJT, i-GTO, i-IGBT njalo njalo.

Singabonelela nge-4-intshi kunye ne-6-intshi ye-SiC epitaxial wafers ukwenza izixhobo zombane eziquka i-SBD JBS PiN MOSFET JFET BJT GTO & IGBT ukusuka kwi-600V ukuya kwi-3300V

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Inkqubo yokulungiselela i-silicon carbide epitaxial wafer yindlela yokusebenzisa i-Chemical Vapor Deposition (CVD) iteknoloji. Oku kulandelayo yimigaqo yobugcisa efanelekileyo kunye namanyathelo enkqubo yokulungiselela:

Umgaqo wobugcisa:

I-Chemical Vapor Deposition: Ukusebenzisa igesi ekrwada kwisigaba segesi, phantsi kweemeko ezithile zokusabela, iyabola kwaye ifakwe kwi-substrate ukwenza ifilimu enqwenelekayo.

Ukusabela kwesigaba segesi: Ngokusebenzisa i-pyrolysis okanye i-cracking reaction, iigesi ezahlukeneyo zezinto ezibonakalayo kwisigaba segesi zitshintshwa ngokwekhemikhali kwigumbi lokuphendula.

Amanyathelo enkqubo yokulungiselela:

Ukunyangwa kwe-substrate: I-substrate iphantsi kokucoca umphezulu kunye nokulungiswa kwangaphambili ukuze kuqinisekiswe umgangatho kunye ne-crystallinity ye-epitaxial wafer.

Ukulungiswa kwegumbi lokuphendula: lungisa ubushushu, uxinzelelo kunye nesantya sokuhamba kwegumbi lokuphendula kunye nezinye iiparameters ukuqinisekisa ukuzinza kunye nokulawulwa kweemeko zokusabela.

Unikezelo lwempahla ekrwada: nikezela ngezinto ezifunekayo zerhasi kwigumbi lokusabela, ukuxuba kunye nokulawula izinga lokuhamba njengoko kufuneka.

Inkqubo yokusabela: Ngokufudumeza igumbi lokusabela, i-gaseous feedstock ingena kwikhemikhali kwigumbi ukuvelisa idiphozithi oyifunayo, okt ifilimu yesilicon carbide.

Ukupholisa kunye nokukhulula: Ekupheleni kokusabela, ubushushu buyancipha ngokuthe ngcembe ukupholisa kunye nokuqinisa iidiphozithi kwigumbi lokuphendula.

I-Epitaxial wafer annealing kunye ne-post-processing: i-wafer ye-epitaxial egciniweyo ifakwe kwaye iqhutywe emva kokuphucula iimpawu zayo zombane kunye ne-optical.

Amanyathelo athile kunye neemeko zenkqubo yokulungiselela i-silicon carbide epitaxial wafer inokwahluka ngokuxhomekeke kwisixhobo esithile kunye neemfuno. Oku ngasentla kuphela ukuhamba kwenkqubo ngokubanzi kunye nomgaqo, umsebenzi othile kufuneka ulungelelaniswe kwaye uphuculwe ngokweyona meko.