I-6inch ye-HPSI SiC substrate wafer iSilicon Carbide Semi-ithukisa iiwafa zeSiC
I-PVT Silicon Carbide Crystal SiC yokuKhula iTekhnoloji
Iindlela zokukhula zangoku ze-SiC enye ikristale ibandakanya ezi zintathu zilandelayo: indlela yesigaba solwelo, ubushushu obuphezulu bekhemikhali indlela yokubeka umphunga, kunye nendlela yokuthutha isigaba somphunga (PVT). Phakathi kwazo, indlela ye-PVT yeyona nto iphandiweyo kunye netekhnoloji evuthiweyo yokukhula kwekristale enye ye-SiC, kunye nobunzima bayo bobugcisa:
(1) Ikristale yeSiC enye kubushushu obuphezulu be2300 ° C ngaphezu kwegumbi legraphite elivaliweyo ukugqiba inkqubo yokuguqula "i-solid - igesi - eqinileyo", umjikelo wokukhula ude, kunzima ukulawula, kwaye uthambekele kwi-microtubules, inclusions kunye nezinye iziphene.
(2) I-Silicon carbide ikristale enye, kubandakanywa ngaphezu kwe-200 iintlobo zekristale ezahlukeneyo, kodwa ukuveliswa kohlobo olulodwa lwekristale ngokubanzi, kulula ukuvelisa i-crystal uhlobo lwenguqu kwinkqubo yokukhula okubangelwa iziphene ezininzi zokudibanisa, inkqubo yokulungiswa kohlobo olulodwa lwekristale kunzima ukulawula ukuzinza kwenkqubo, umzekelo, ubuninzi obukhoyo bohlobo lwe-4H.
(3) I-Silicon carbide enye ikristale yokukhula kwintsimi ye-thermal kukho i-gradient yeqondo lokushisa, okubangela ukuba inkqubo yokukhula kwekristale kukho uxinzelelo lwangaphakathi lwangaphakathi kunye nokukhutshwa okubangelwayo, iimpazamo kunye nezinye iziphene ezenziwe.
(4) I-silicon carbide enye inkqubo yokukhula kwekristale kufuneka ilawule ngokungqongqo ukungeniswa kokungcola kwangaphandle, ukuze kufumaneke ucoceko oluphezulu kakhulu lwekristale ye-semi-insulating crystal okanye i-directionally doped conductive crystal. Kwi-semi-insulating ye-silicon carbide substrates esetyenziswa kwizixhobo ze-RF, iipropathi zombane kufuneka zifezekiswe ngokulawula ingxinano yokungcola ephantsi kakhulu kunye neentlobo ezithile zeziphene zamanqaku kwikristale.
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