I-wafer ye-substrate ye-HPSI SiC eyi-intshi ezi-6 Ii-wafer ze-Silicon Carbide ezithiywayo kancinci
Itekhnoloji yoKhulo lwe-PVT Silicon Carbide Crystal SiC
Iindlela zokukhula zangoku zekristale enye yeSiC ziquka ezi zintathu zilandelayo: indlela yesigaba solwelo, indlela yokubeka umphunga wekhemikhali obushushu obuphezulu, kunye nendlela yokuthutha umphunga we-physical vapour phase (PVT). Phakathi kwazo, indlela yePVT yeyona teknoloji iphandwe kakhulu kwaye ivuthiweyo yokukhula kwekristale enye yeSiC, kwaye ubunzima bayo bobuchwephesha zezi:
(1) I-SiC single crystal kubushushu obuphezulu be-2300 ° C ngaphezulu kwegumbi legrafiti elivaliweyo ukuze kugqitywe inkqubo yokuguqulwa kwe-"solid-gas-solid", umjikelo wokukhula mde, kunzima ukuwulawula, kwaye uthambekele kwi-microtubules, i-inclusions kunye nezinye iziphene.
(2) I-silicon carbide crystal enye, kuquka iintlobo ezahlukeneyo zekristale ezingaphezu kwama-200, kodwa ukuveliswa kohlobo olunye lwekristale ngokubanzi, kulula ukuvelisa utshintsho lohlobo lwekristale kwinkqubo yokukhula okubangela iziphene ze-inclusions zeentlobo ezininzi, inkqubo yokulungiselela uhlobo olunye lwekristale ethile kunzima ukulawula uzinzo lwenkqubo, umzekelo, i-mainstream yangoku yohlobo lwe-4H.
(3) Intsimi yobushushu yokukhula kwekristale enye yeSilicon carbide kukho i-gradient yobushushu, nto leyo ebangela ukuba inkqubo yokukhula kwekristale ibe noxinzelelo lwangaphakathi lwendalo kunye nokwahlukana okubangelwa kukwenzeka, iimpazamo kunye nezinye iziphene.
(4) Inkqubo yokukhula kwekristale enye yeSilicon carbide kufuneka ilawule ngokungqongqo ukungena kokungcola kwangaphandle, ukuze kufunyanwe ikristale ecocekileyo kakhulu okanye ikristale eqhubayo enee-directionally doped conductive crystal. Kwi-substrates ze-silicon carbide ezikhuselayo ezisetyenziswa kwizixhobo ze-RF, iimpawu zombane kufuneka zifezekiswe ngokulawula uxinano oluphantsi kakhulu lokungcola kunye neentlobo ezithile zeziphene zenqaku kwikristale.
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