I-6inch ye-HPSI SiC substrate wafer iSilicon Carbide Semi-ithukisa iiwafa zeSiC

I-6inch ye-HPSI SiC substrate wafer Silicon Carbide Semi-ithukisa ii-SiC wafers

Inkcazelo emfutshane:

Umgangatho ophezulu we-crystal SiC wafer (i-Silicon Carbide esuka kwi-SICC) ukuya kwishishini le-elektroniki kunye ne-optoelectronic. I-3inch SiC wafer sisizukulwana esilandelayo semiconductor imathiriyeli, isemi-insulating silicon-carbide wafers ezinobubanzi obuyi-intshi ezi-3. Iiwafers zenzelwe ukwenziwa kwamandla, iRF kunye nezixhobo ze-optoelectronics.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-PVT Silicon Carbide Crystal SiC yokuKhula iTekhnoloji

Iindlela zokukhula zangoku ze-SiC enye ikristale ibandakanya ezi zintathu zilandelayo: indlela yesigaba solwelo, ubushushu obuphezulu bekhemikhali indlela yokubeka umphunga, kunye nendlela yokuthutha isigaba somphunga (PVT). Phakathi kwazo, indlela ye-PVT yeyona nto iphandiweyo kunye netekhnoloji evuthiweyo yokukhula kwekristale enye ye-SiC, kunye nobunzima bayo bobugcisa:

(1) Ikristale ye-SiC enye kubushushu obuphezulu be-2300 ° C ngaphezu kwegumbi legraphite elivaliweyo ukugqiba inkqubo yokuguqula "i-solid - igesi - eqinileyo", umjikelo wokukhula ude, kunzima ukuwulawula, kwaye uthambekele kwi-microtubules, inclusions kunye ezinye iziphene.

(2) I-silicon carbide ikristale enye, kubandakanywa iintlobo ezingaphezu kwama-200 zekristale ezahlukeneyo, kodwa ukuveliswa kohlobo olulodwa lwekristale ngokubanzi, kulula ukuvelisa ukuguqulwa kohlobo lwekristale kwinkqubo yokukhula okubangela ukuba kubekho iziphene ezininzi, inkqubo yokulungiselela enye. uhlobo oluthile lwe-crystal lunzima ukulawula ukuzinza kwenkqubo, umzekelo, i-mainstream yangoku ye-4H-uhlobo.

(3) I-Silicon carbide enye ikristale yokukhula kwintsimi ye-thermal kukho i-gradient yeqondo lokushisa, okubangela ukuba inkqubo yokukhula kwekristale kukho uxinzelelo lwangaphakathi lwangaphakathi kunye nokukhutshwa okubangelwayo, iimpazamo kunye nezinye iziphene ezenziwe.

(4) I-silicon carbide enye inkqubo yokukhula kwekristale kufuneka ilawule ngokungqongqo ukungeniswa kokungcola kwangaphandle, ukuze kufumaneke ucoceko oluphezulu kakhulu lwekristale ye-semi-insulating crystal okanye i-directionally doped conductive crystal. Kwi-semi-insulating ye-silicon carbide substrates esetyenziswa kwizixhobo ze-RF, iipropathi zombane kufuneka zifezekiswe ngokulawula ingxinano yokungcola ephantsi kakhulu kunye neentlobo ezithile zeziphene zamanqaku kwikristale.