I-6 intshi eqhuba ikristale enye yeSiC kwi-polycrystalline SiC composite substrate Ububanzi be-150mm P uhlobo lwe-N

I-6 intshi eqhuba ikristale enye yeSiC kwi-polycrystalline SiC composite substrate Ububanzi 150mm P uhlobo lweN uhlobo loMfanekiso obonakalayo

Inkcazelo emfutshane:

I-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate imele isisombululo sezinto ezintsha ze-silicon carbide (SiC) ezenzelwe amandla aphezulu, ubushushu obuphezulu, kunye nezixhobo ze-elektroniki ze-frequency. Le substrate ibonisa i-single-crystal SiC layer esebenzayo edibeneyo kwisiseko se-polycrystalline SiC ngokusebenzisa iinkqubo ezikhethekileyo, ukudibanisa iipropati eziphezulu zombane ze-monocrystalline SiC kunye neendleko zeendleko ze-polycrystalline SiC.
Xa kuthelekiswa ne-substrates ye-SiC ye-monocrystalline epheleleyo, i-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate igcina ukuhamba kwe-electron ephezulu kunye nokuxhatshazwa kwe-voltage ngelixa inciphisa kakhulu iindleko zokuvelisa. Ubukhulu bayo obuziintshi ezi-6 (150 mm) buqinisekisa ukuhambelana nemigca yemveliso ekhoyo yesemiconductor, eyenza ukuveliswa okunokwehla. Ukongeza, uyilo lokuqhuba luvumela ukusetyenziswa ngokuthe ngqo kulwakhiwo lwesixhobo samandla (umzekelo, iiMOSFET, iidiode), ukuphelisa imfuno yeenkqubo ezongezelelweyo zedoping kunye nokwenza lula ukuhamba komsebenzi wemveliso.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iiparamitha zobugcisa

Ubungakanani:	6 intshi
Ububanzi:	150 mm
Ukutyeba:	400-500 μm
IiParameters zefilimu ye-Monocrystalline SiC
I-Polytype:	I-4H-SiC okanye i-6H-SiC
Ukugxila kwiDoping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ukutyeba:	5-20 μm
Ukuchasa iPhepha:	10-1000 Ω/sq
Ukuhamba kwe-Elektroni:	800-1200 cm²/Vs
Ukushukuma komngxuma:	100-300 cm²/Vs
I-Polycrystalline SiC Buffer Layer Parameters
Ukutyeba:	50-300 μm
I-Thermal Conductivity:	150-300 W/m·K
Iiparamitha zeMonocrystalline SiC Substrate
I-Polytype:	I-4H-SiC okanye i-6H-SiC
Ukugxila kwiDoping:	1×10¹⁴ - 1×10¹⁸ cm⁻³
Ukutyeba:	300-500 μm
Ubungakanani benkozo:	> 1 mm
Uburhabaxa boMphezulu:	< 0.3 mm RMS
IiPropati zoomatshini kunye nezoMbane
Ukuqina:	9-10 Mohs
Amandla acinezelayo:	3-4 GPA
Tensile strength:	0.3-0.5 GPA
Ukomelela kweNdawo yoKwahlulwa:	> 2 MV/cm
Unyamezelo lwedosi iyonke:	> 10 uMnu
Ukunyangwa kweMpembelelo yesiganeko esinye:	> 100 MeV·cm²/mg
I-Thermal Conductivity:	150-380 W/m·K
Uluhlu lobushushu obusebenzayo:	-55 ukuya kuma-600°C

Iimpawu eziphambili

I-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate inika ibhalansi ekhethekileyo yesakhiwo sezinto eziphathekayo kunye nokusebenza, okwenza ukuba ilungele iimeko ezibango zoshishino:

I-1.Indleko-Esebenzayo: Isiseko se-polycrystalline SiC sinciphisa kakhulu iindleko xa kuthelekiswa ne-SiC epheleleyo ye-monocrystalline, ngelixa i-monocrystalline SiC layer esebenzayo iqinisekisa ukusebenza kwe-device-grade, ilungele ukusetyenziswa kweendleko.

2.IiPropati zoMbane eziKhethekileyo: Umaleko we-SiC we-monocrystalline ubonisa ukuhamba kwe-carrier ephezulu (>500 cm²/V·s) kunye noxinano oluphantsi, oluxhasa i-frequency ephezulu kunye nokusebenza kwesixhobo samandla aphezulu.

I-3.I-High-Temperature Stability: I-SiC yendalo yokumelana nobushushu obuphezulu (> 600 ° C) iqinisekisa ukuba i-substrate edibeneyo ihlala izinzile phantsi kweemeko ezinzima, okwenza ukuba zilungele izithuthi zombane kunye nezicelo zeemoto zoshishino.

I-4.6-intshi yoMgangatho we-Wafer Ubungakanani: Xa kuthelekiswa ne-4-intshi ye-SiC substrates yendabuko, ifomathi ye-intshi ye-6 inyusa isivuno se-chip ngaphezu kwe-30%, ukunciphisa iindleko zesixhobo seyunithi nganye.

I-5.Uyilo oluKhombisayo: I-N-type yangaphambili okanye i-P-type layers inciphisa amanyathelo okufakelwa kwe-ion kwimveliso yesixhobo, ukuphucula ukusebenza kakuhle kwemveliso kunye nesivuno.

I-6.Ulawulo oluPhezulu lwe-Thermal: Isiseko se-polycrystalline SiC ye-thermal conductivity (~ 120 W / m·K) isondela kwi-monocrystalline SiC, ijongene ngokuphumelelayo nemingeni yokutshatyalaliswa kobushushu kwizixhobo eziphezulu zamandla.

Ezi mpawu zibeka i-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate njengesisombululo sokukhuphisana kumashishini afana namandla ahlaziyekayo, ukuthutha ngololiwe, kunye ne-aerospace.

Izicelo eziphambili

I-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate ifakwe ngempumelelo kwiinkalo ezininzi ezifunwa kakhulu:
I-1.Electric Vehicle Powertrains: Isetyenziswa kwi-high-voltage ye-SiC MOSFETs kunye neediode zokuphucula ukusebenza kakuhle kwe-inverter kunye nokwandisa uluhlu lwebhetri (umz., i-Tesla, imizekelo ye-BYD).

I-2.Ii-Industrial Motor Drives: Ivumela imodyuli yamandla aphezulu, i-high-switching-frequency power, ukunciphisa ukusetyenziswa kwamandla kumatshini onzima kunye nee-injini zomoya.

I-3.I-Photovoltaic Inverters: Izixhobo ze-SiC ziphucula ukusebenza kakuhle kokuguqulwa kwelanga (> 99%), ngelixa i-substrate edibeneyo inciphisa ngakumbi iindleko zenkqubo.

I-4.Izothutho zikaLoliwe: Isetyenziswe kwiziguquli ze-traction kwi-high-speed-speed rail kunye ne-subway systems, enikezela ukuxhathisa i-high-voltage (> 1700V) kunye ne-compact form factor.

I-5.I-Aerospace: Ilungele iinkqubo zamandla zesathelayithi kunye neesekethe zokulawula injini yenqwelomoya, ekwaziyo ukumelana nobushushu obugqithisileyo kunye nemitha.

Kwimveliso ebonakalayo, i-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate ihambelana ngokupheleleyo neenkqubo eziqhelekileyo zesixhobo se-SiC (umzekelo, i-lithography, i-etching), engadingi utyalo-mali olongezelelweyo.

Iinkonzo ze-XKH

I-XKH ibonelela ngenkxaso ebanzi ye-6-intshi ye-monocrystalline SiC eqhubayo kwi-polycrystalline SiC ehlanganisiweyo substrate, egubungela i-R&D kwimveliso yobuninzi:

1.Ukwenziwa ngokwezifiso: Ubukhulu be-monocrystalline umaleko ohlengahlengiswayo (5–100 μm), ugxininiso lwe-doping (1e15–1e19 cm⁻³), kunye nokuqhelaniswa nekristale (4H/6H-SiC) ukuhlangabezana neemfuno ezahlukeneyo zesixhobo.

I-2.I-Wafer Processing: Ukunikezelwa ngobuninzi bee-substrates ze-6-intshi kunye ne-backside thinning kunye neenkonzo ze-metallization zokudibanisa iplagi kunye nokudlala.

I-3.Ukuqinisekiswa koBuchule: Kubandakanya uhlalutyo lwe-XRD crystallinity, uvavanyo lwempembelelo yeHolo, kunye nokulinganisa ukuchasana kwe-thermal ukukhawulezisa isiqinisekiso sezinto eziphathekayo.

4.I-Rapid Prototyping: Iisampuli ze-2 ukuya kwi-4-intshi (inkqubo efanayo) kumaziko ophando ukukhawulezisa imijikelo yophuhliso.

I-5.Uhlalutyo lokungaphumeleli kunye noPhuculo: Izisombululo zenqanaba lezinto eziphathekayo zokujongana nemingeni (umzekelo, i-epitaxial layer defects).

Injongo yethu kukuseka i-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate njengesisombululo esikhethiweyo seendleko ze-electronics ze-SiC, enikezela ngenkxaso yokuphela-ukuphela ukusuka kwiprototyping ukuya kwimveliso yevolumu.

Ukuqukumbela

I-6-inch conductive monocrystalline SiC kwi-polycrystalline SiC composite substrate ifezekisa ibhalansi yokuphumelela phakathi kokusebenza kunye neendleko ngokusebenzisa i-mono / polycrystalline hybrid structure yayo. Njengoko izithuthi zombane zisanda kunye ne-Industry 4.0 inkqubela phambili, le substrate ibonelela ngesiseko esithembekileyo sezinto zombane zesizukulwana esilandelayo. I-XKH yamkele intsebenziswano ukuphonononga ngakumbi amandla obuchwepheshe be-SiC.