I-Substrate ye-SiC Composite eyi-6 intshi eqhubayo ene-4H ububanzi 150mm Ra≤0.2nm Warp≤35μm

Inkcazo emfutshane:

Iqhutywa kukufuna kweshishini le-semiconductor ukusebenza okuphezulu kunye neendleko eziphantsi, i-substrate ye-SiC composite eqhubayo ye-intshi ezi-6 ivele. Ngobuchwepheshe obutsha bezinto ezihlanganisiweyo, le wafer ye-intshi ezi-6 ifikelela kwi-85% yokusebenza kwee-wafer zemveli ze-intshi ezi-8 ngelixa ixabisa i-60% kuphela. Izixhobo zamandla kwizicelo zemihla ngemihla ezifana nezikhululo zokutshaja zezithuthi zamandla amatsha, iimodyuli zamandla ze-5G base station, kunye nee-variable-frequency drives kwizixhobo zasekhaya eziphambili zisenokuba sele zisebenzisa ii-substrates zolu hlobo. Itekhnoloji yethu yokukhula kwe-epitaxial ene-patent multi-layer epitaxial ivumela ii-atomic-level flat composite interfaces kwiziseko ze-SiC, kunye noxinano lwe-interface state ngaphantsi kwe-1×10¹¹/cm²·eV - inkcazo efikelele kumanqanaba aphambili kwihlabathi liphela.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Izinto	Imvelisoibakala	Idemuibakala
Ububanzi	Ii-intshi ezi-6-8	Ii-intshi ezi-6-8
Ubukhulu	350/500±25.0 μm	350/500±25.0 μm
Uhlobo lwePolytype	4H	4H
Ukuxhathisa	0.015-0.025 ohm·cm	0.015-0.025 ohm·cm
I-TTV	≤5 μm	≤20 μm
I-Warp	≤35 μm	≤55 μm
Uburhabaxa bangaphambili (ubuso beSi-face)	I-Ra≤0.2 nm (5μm×5μm)	I-Ra≤0.2 nm (5μm×5μm)

Ezona mpawu

1. Inzuzo yexabiso: I-substrate yethu ye-SiC edibeneyo eyi-6-intshi isebenzisa iteknoloji "ye-graded buffer layer" eyiyo eyenza ngcono ukwakheka kwezinto ukuze kuncitshiswe iindleko zezinto eziluhlaza ngama-38% ngelixa igcina ukusebenza kakuhle kombane. Imilinganiselo yokwenyani ibonisa ukuba izixhobo ze-650V MOSFET ezisebenzisa le substrate zifumana ukwehla kwama-42% kwixabiso ngeyunithi nganye xa kuthelekiswa nezisombululo zesiqhelo, nto leyo ibalulekileyo ekukhuthazeni ukwamkelwa kwezixhobo ze-SiC kwii-elektroniki zabathengi.
2. Iipropati Ezibalaseleyo Zokuqhuba: Ngokusebenzisa iinkqubo zokulawula i-nitrogen doping ezichanekileyo, i-substrate yethu ye-SiC edibeneyo ye-conductive eyi-6-intshi ifikelela kwi-resistivity ephantsi kakhulu ye-0.012-0.022Ω·cm, kunye nokuguquguquka okulawulwa ngaphakathi kwe-±5%. Okuphawulekayo kukuba, sigcina i-resistivity efanayo nangaphakathi kommandla we-5mm edge we-wafer, sisombulula ingxaki ye-edge effect ende ende ixesha elide kushishino.
3. Ukusebenza kobushushu: Imodyuli ye-1200V/50A eyenziwe kusetyenziswa i-substrate yethu ibonisa ukunyuka kobushushu be-junction obuyi-45℃ kuphela ngaphezu kwe-ambient xa usebenza ngokupheleleyo - iphantsi ngama-65℃ kunezixhobo ezisekwe kwi-silicon ezifanayo. Oku kuvunyelwe yisakhiwo sethu esidibeneyo se-"3D thermal channel" esiphucula ukuhanjiswa kobushushu obusecaleni ukuya kwi-380W/m·K kunye nokuhanjiswa kobushushu okuthe nkqo ukuya kwi-290W/m·K.
4. Ukuhambelana kweNkqubo: Kwisakhiwo esahlukileyo se-6-intshi conductive SiC composite substrates, siphuhlise inkqubo yokusika i-laser stealth ehambelanayo efikelela kwi-200mm/s isantya sokusika ngelixa silawula ukuqhekeka komphetho ngaphantsi kwe-0.3μm. Ukongeza, sinikezela ngeendlela ze-pre-nickel-plated substrate ezivumela ukubophelela ngqo kwi-die, zigcine abathengi amanyathelo amabini enkqubo.

Izicelo eziphambili

Izixhobo ezibalulekileyo zeGridi ehlakaniphileyo:

Kwiinkqubo zothumelo lwe-voltage ephezulu kakhulu (UHVDC) ezisebenza kwi-±800kV, izixhobo ze-IGCT ezisebenzisa ii-substrates zethu ze-SiC ezidityanisiweyo ezisebenzisa i-6-intshi zibonisa ukuphuculwa kokusebenza okumangalisayo. Ezi zixhobo zifezekisa ukuncipha kwama-55% kwilahleko zokutshintsha ngexesha leenkqubo zokutshintsha, ngelixa zonyusa ukusebenza kakuhle kwenkqubo iyonke ukuya kudlula i-99.2%. Ukuqhuba okuphezulu kobushushu be-substrates (380W/m·K) kwenza uyilo lwe-compact converter olunciphisa unyawo lwesitishi esingaphantsi nge-25% xa kuthelekiswa nezisombululo zesiqhelo ezisekelwe kwi-silicon.

Ii-Powertrains zeZithuthi zamandla amatsha:

Inkqubo yokuqhuba equka ii-substrates zethu ze-SiC ezihlanganisiweyo ze-6-intshi ifezekisa uxinano lwamandla e-inverter olungazange lubonwe ngaphambili lwe-45kW/L - uphuculo lwe-60% kunoyilo lwazo lwangaphambili olusekelwe kwi-silicon ye-400V. Okumangalisayo kukuba, le nkqubo igcina ukusebenza kakuhle kwe-98% kulo lonke uhla lobushushu bokusebenza ukusuka kwi--40℃ ukuya kwi-+175℃, isombulula imingeni yokusebenza kwemozulu ebandayo eye yabangela ukwamkelwa kwe-EV kwiindawo ezisemantla. Uvavanyo lokwenyani lubonisa ukonyuka kwe-7.5% kuluhlu lwasebusika kwizithuthi ezixhotyiswe ngolu buchwepheshe.

IiDrives eziGuqukayo zeFrequency zeMizi-mveliso:

Ukwamkelwa kwezixhobo zethu kwiimodyuli zamandla ezikrelekrele (ii-IPM) kwiinkqubo ze-servo zoshishino kuguqula ukwenziwa kwezinto ngokuzenzekelayo. Kwiziko loomatshini be-CNC, ezi modyuli zibonelela nge-40% yempendulo yemoto ekhawulezayo (inciphisa ixesha lokukhawulezisa ukusuka kwi-50ms ukuya kwi-30ms) ngelixa zinciphisa ingxolo ye-electromagnetic nge-15dB ukuya kwi-65dB(A).

Izixhobo ze-elektroniki zabathengi:

Utshintsho lwe-elektroniki lwabathengi luyaqhubeka kunye nezixhobo zethu ezivumela isizukulwana esilandelayo se-65W GaN fast chargers. Ezi adaptha zamandla ezincinci zifikelela kwi-30% yokunciphisa ivolumu (ukuya kuthi ga kwi-45cm³) ngelixa zigcina amandla apheleleyo, ngenxa yeempawu zokutshintsha ezibalaseleyo zoyilo olusekwe kwi-SiC. Imifanekiso yobushushu ibonisa amaqondo obushushu aphezulu angama-68°C kuphela ngexesha lokusebenza okuqhubekayo - ama-22°C apholileyo kunezoyilo zesiqhelo - okuphucula kakhulu ubomi bemveliso kunye nokhuseleko.

Iinkonzo zokwenziwa ngokwezifiso ze-XKH

I-XKH inika inkxaso epheleleyo yokwenza ngokwezifiso ii-substrates ze-SiC ezihlanganisiweyo ze-6-intshi:

Ukwenziwa ngokwezifiso kobukhulu: Iinketho eziquka iinkcukacha ze-200μm, 300μm, kunye ne-350μm
2. Ulawulo lokuxhathisa: Uxinzelelo lwe-doping oluhlengahlengiswayo oluvela kwi-n-type ukusuka kwi-1×10¹⁸ ukuya kwi-5×10¹⁸ cm⁻³

3. Ukujongwa kwekristale: Inkxaso yokujongwa kweendlela ezahlukeneyo kuquka (0001) i-off-axis 4° okanye i-8°

4. Iinkonzo zoVavanyo: Iingxelo zovavanyo lweparameter ezipheleleyo zenqanaba le-wafer

Ixesha lethu langoku lokuqalisa ukusuka kwi-prototyping ukuya kwimveliso enkulu linokuba lifutshane njengeeveki ezi-8. Kubathengi abanobuchule, sinikezela ngeenkonzo zophuhliso lweenkqubo ezizinikeleyo ukuqinisekisa ukuhambelana ngokugqibeleleyo neemfuno zesixhobo.