I-intshi ezi-6 ukuya kwezi-8 ze-LN-on-Si Composite Substrate Ubungqingqwa be-0.3-50 μm Si/SiC/Sapphire yezinto

Inkcazo emfutshane:

I-substrate ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 yimpahla esebenza kakuhle edibanisa iifilimu ezibhityileyo ze-single-crystal lithium niobate (LN) kunye nee-substrate ze-silicon (Si), ezinobukhulu obuqala kwi-0.3 μm ukuya kwi-50 μm. Yenzelwe ukwenziwa kwezixhobo ze-semiconductor eziphambili kunye ne-optoelectronic. Isebenzisa iindlela zokukhulisa ezidityanisiweyo okanye ze-epitaxial, le substrate iqinisekisa umgangatho ophezulu we-crystalline wefilimu ebhityileyo ye-LN ngelixa isebenzisa ubungakanani obukhulu be-wafer (iisentimitha ezi-6 ukuya kwezi-8) ze-substrate ye-silicon ukuphucula ukusebenza kakuhle kwemveliso kunye nokusebenza kakuhle kweendleko.
Xa kuthelekiswa nezinto ze-LN ezisetyenziswa kakhulu, i-substrate ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 inika ukuhambelana okuphezulu kobushushu kunye nokuzinza koomatshini, okwenza ukuba ifaneleke ukucutshungulwa kwinqanaba elikhulu le-wafer. Ukongeza, ezinye izinto ezisisiseko ezifana ne-SiC okanye i-sapphire zinokukhethwa ukuze zihlangabezane neemfuno ezithile zesicelo, kubandakanya izixhobo ze-RF ezisebenzisa i-frequency ephezulu, ii-photonics ezidibeneyo, kunye nee-sensors ze-MEMS.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

0.3-50μm LN/LT kwii-Insulators
Umaleko ophezulu
Ububanzi	Ii-intshi ezi-6-8
Ukuqhelaniswa	X, Z, Y-42 njl.
Izixhobo	LT, LN
Ubukhulu	0.3-50μm
I-substrate (Eyenzelwe wena)
Izinto eziphathekayo	I-Si, i-SiC, iSapphire, iSpinel, iQuartz

Ezona mpawu

I-substrate ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 yahlulwe ziimpawu zayo ezikhethekileyo zezinto kunye neeparamitha ezihlengahlengiswayo, nto leyo evumela ukusetyenziswa ngokubanzi kumashishini e-semiconductor kunye ne-optoelectronic:

1. Ukuhambelana kweWafer enkulu: Ubungakanani bewafer obuyi-intshi ezi-6 ukuya kwezi-8 buqinisekisa ukuhlanganiswa okungenamthungo kunye nemigca yokwenziwa kwe-semiconductor ekhoyo (umz., iinkqubo ze-CMOS), ukunciphisa iindleko zemveliso kunye nokuvumela imveliso enkulu.

2. Umgangatho ophezulu wekristale: Iindlela ze-epitaxial okanye ze-bonding ezilungiselelweyo ziqinisekisa ukuba i-LN thin film incinci kwaye ifikeleleka lula kwii-optical modulators ezisebenzayo, ii-surface acoustic wave (SAW) filters, kunye nezinye izixhobo zokuchaneka.

3. Ubukhulu Obuhlengahlengiswayo (0.3–50 μm): Iileya ze-LN ezibhityileyo kakhulu (<1 μm) zifanelekile kwiitships ze-photonic ezidityanisiweyo, ngelixa iileya ezibhityileyo (10–50 μm) zixhasa izixhobo ze-RF ezinamandla aphezulu okanye ii-piezoelectric sensors.

4. Iinketho zeSubstrate ezininzi: Ukongeza kwiSi, iSiC (ukuqhuba okuphezulu kobushushu) okanye iSapphire (ubushushu obuphezulu) zinokukhethwa njengezixhobo ezisisiseko ukuhlangabezana neemfuno zezicelo ezisetyenziswa rhoqo, ezisebenzisa ubushushu obuphezulu, okanye ezinamandla aphezulu.

5. Uzinzo lweThermal kunye neMechanical: I-silicon substrate inika inkxaso eqinileyo yemechanical, inciphisa ukugoba okanye ukuqhekeka ngexesha lokucubungula kunye nokuphucula imveliso yesixhobo.

Ezi mpawu zibeka i-substrate ye-LN-on-Si edibeneyo ukusuka kwiisentimitha ezi-6 ukuya kwezi-8 njengezinto ezikhethwayo kwiiteknoloji eziphambili ezifana nonxibelelwano lwe-5G, i-LiDAR, kunye ne-quantum optics.

Izicelo eziphambili

I-substrate ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 isetyenziswa kakhulu kumashishini akumgangatho ophezulu ngenxa yeempawu zayo ezibalaseleyo ze-electro-optic, i-piezoelectric, kunye ne-acoustic:

1. Unxibelelwano lwe-Optical kunye ne-Integrated Photonics: Ivumela ii-modulators ze-electro-optic ezikhawulezayo, ii-waveguides, kunye nee-photonic integrated circuits (ii-PIC), ezijongana neemfuno ze-bandwidth zeziko ledatha kunye neenethiwekhi ze-fiber-optic.

Izixhobo ze-RF ze-2.5G/6G: I-LN ephezulu ye-piezoelectric coefficient yenza ukuba ilungele amaza angaphezulu e-acoustic wave (SAW) kunye namaza angaphezulu e-acoustic wave (BAW), nto leyo ephucula ukucutshungulwa kwesignali kwizikhululo zesiseko ze-5G kunye nezixhobo eziphathwayo.

3.I-MEMS kunye neeSensors: Isiphumo se-piezoelectric se-LN-on-Si senza kube lula ii-accelerometers ezinovakalelo oluphezulu, ii-biosensors, kunye nee-transducers ze-ultrasonic kwizicelo zonyango nakwimizi-mveliso.

4. Iiteknoloji zeQuantum: Njengezinto ezibonakalayo ezingezizo ezithe tye, iifilimu ezibhityileyo ze-LN zisetyenziswa kwimithombo yokukhanya kwe-quantum (umz., ii-photon pairs ezidibeneyo) kunye nee-quantum chips ezidibeneyo.

5. IiLaser kunye neeNonlinear Optics: Iileya ze-LN ezinciphileyo zivumela izixhobo ezisebenzayo zokuvelisa i-second-harmonic (SHG) kunye ne-optical parametric oscillation (OPO) zokucubungula i-laser kunye nohlalutyo lwe-spectroscopic.

I-substrate eqhelekileyo ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 ivumela ezi zixhobo ukuba zenziwe kwiifayibha ezinkulu ze-wafer, nto leyo enciphisa kakhulu iindleko zemveliso.

Ukwenziwa ngokwezifiso kunye neenkonzo

Sinikezela ngenkxaso yobugcisa epheleleyo kunye neenkonzo zokwenza ngokwezifiso i-substrate ye-LN-on-Si edibeneyo eyi-6-intshi ukuya kwi-8-intshi ukuze ihlangabezane neemfuno ezahlukeneyo zophando nophuhliso kunye nemveliso:

1. Ukwenziwa Ngokwezifiso: Ubukhulu befilimu ye-LN (0.3–50 μm), ukujongwa kwekristale (X-cut/Y-cut), kunye nezinto ze-substrate (Si/SiC/sapphire) zinokulungiswa ukuze kuphuculwe ukusebenza kwesixhobo.

2. Ukucubungula iWafer Level: Ukubonelela ngobuninzi beewafers eziyi-6 intshi kunye ne-8 intshi, kuquka iinkonzo zangasemva ezifana nokusika, ukupolisha, kunye nokugquma, ukuqinisekisa ukuba ii-substrates zilungele ukuhlanganiswa kwesixhobo.

3. Ukubonisana ngoBugcisa kunye noVavanyo: Ukuchazwa kwezinto (umz., i-XRD, i-AFM), uvavanyo lokusebenza kwe-electro-optic, kunye nenkxaso yokulinganisa isixhobo ukuze kukhawuleziswe ukuqinisekiswa koyilo.

Injongo yethu kukuseka i-substrate ye-LN-on-Si edibeneyo eqala kwiisentimitha ezi-6 ukuya kwezi-8 njengesisombululo esiphambili sezixhobo ze-optoelectronic kunye ne-semiconductor, esinika inkxaso ukusuka ekuqaleni ukuya ekupheleni ukusuka kwi-R&D ukuya kwimveliso enkulu.

Isiphelo

I-substrate ye-LN-on-Si edityanisiweyo eqala kwiisentimitha ezi-6 ukuya kwezi-8, enobukhulu bayo obukhulu be-wafer, umgangatho ophezulu wezinto ezibonakalayo, kunye nokuguquguquka, iqhubela phambili kunxibelelwano lwe-optical, i-5G RF, kunye nobuchwepheshe be-quantum. Nokuba kukwenziwa komthamo omkhulu okanye izisombululo ezenziwe ngokwezifiso, sinikezela nge-substrates ezinokuthenjwa kunye neenkonzo ezongezelelweyo zokunika amandla ubugcisa obutsha.