6 intshi-8 intshi LN-on-Si Composite Substrate Ukutyeba 0.3-50 μm Si/SiC/Sapphire yeMathiriyeli

I-6 intshi-8 intshi ye-LN-on-Si Composite Substrate Ukutyeba 0.3-50 μm Si/SiC/Sapphire yeMathiriyeli yoMfanekiso obonisiweyo

Inkcazelo emfutshane:

I-6 intshi ukuya kwi-8 intshi ye-LN-on-Si i-substrate ehlanganisiweyo yinto ephezulu yokusebenza edibanisa i-single-crystal lithium niobate (LN) iifilimu ezincinci kunye ne-silicon (Si) substrates, ezinobunzima obuvela kwi-0.3 μm ukuya kwi-50 μm. Yenzelwe i-semiconductor ephezulu kunye ne-optoelectronic device fabrication. Isebenzisa iindlela zokukhula eziphucukileyo okanye iindlela zokukhula kwe-epitaxial, le substrate iqinisekisa umgangatho ophezulu wekristale wefilimu ye-LN ebhityileyo ngelixa ixhasa ubungakanani be-wafer enkulu (i-6-intshi ukuya kwi-8-intshi) ye-silicon substrate ukunyusa ukusebenza kakuhle kwemveliso kunye nokusebenza kakuhle kweendleko.
Xa kuthelekiswa nobuninzi bezinto eziqhelekileyo ze-LN, i-intshi ye-6 ukuya kwi-8-intshi ye-LN-on-Si edibeneyo edibeneyo inika ukulinganisa okuphezulu kwe-thermal kunye nokuzinza komatshini, okwenza ukuba ilungele ukusetyenzwa kwinqanaba le-wafer-level. Ukongezelela, ezinye izinto ezisisiseko ezifana neSiC okanye isafire zinokukhethwa ukuhlangabezana neemfuno ezithile zesicelo, kubandakanywa nezixhobo zeRF eziphezulu, i-photonics edibeneyo, kunye ne-MEMS sensors.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iiparamitha zobugcisa

0.3-50μm LN / LT kwi-Insulators
Umaleko ophezulu
Ububanzi	6-8 intshi
Ukuqhelaniswa	X, Z, Y-42 njl.
Izinto eziphathekayo	LT, LN
Ukutyeba	0.3-50μm
Inkqutyana (eyenziwe ngokwezifiso)
Izinto eziphathekayo	Si, SiC, Sapphire, Spinel, Quartz

Ezona mpawu

I-6-intshi ukuya kwi-8-intshi ye-LN-on-Si ehlanganisiweyo i-substrate iyahlukaniswa ngeempawu zayo ezizodwa kunye neeparamitha ezinokutya, okwenza ukuba kusetyenziswe ngokubanzi kwi-semiconductor kunye ne-optoelectronic industries:

I-1.I-Wafer Wafer Compatibility: I-6-intshi ukuya kwi-8-intshi ye-wafer size iqinisekisa ukudibanisa ngokungenamthungo kunye nemigca ye-semiconductor ekhoyo ekhoyo (umzekelo, iinkqubo ze-CMOS), ukunciphisa iindleko zokuvelisa kunye nokuvumela imveliso yobuninzi.

I-2.Umgangatho ophezulu we-Crystalline: Ukulungiswa kwe-epitaxial okanye ubuchule bokubambisana buqinisekisa ukuxinwa kwe-defect ephantsi kwifilimu ye-LN encinci, okwenza kube yinto efanelekileyo kwiimodyuli ze-optical-performance high-performance modulators, i-surface acoustic wave (SAW) filters, kunye nezinye izixhobo ezichanekileyo.

3.Ubungqingqwa obuLungisayo (0.3-50 μm): I-Ultrathin LN layers (<1 μm) ifanelekile kwiichips ezidibeneyo zefotonic, ngelixa iileyile ezityebileyo (10-50 μm) zixhasa izixhobo zeRF eziphezulu okanye i-piezoelectric sensors.

I-4.Iinketho ezininzi ze-Substrate: Ukongeza kwi-Si, i-SiC (i-thermal conductivity ephezulu) okanye i-sapphire (i-insulation ephezulu) inokukhethwa njengezinto ezisisiseko ukuhlangabezana neemfuno ze-high-frequency, high-temperature, okanye izicelo zamandla aphezulu.

I-5.I-Thermal kunye ne-Mechanical Stability: I-substrate ye-silicon inikezela ngenkxaso enamandla yomatshini, ukunciphisa i-warping okanye i-crack ngexesha lokucubungula nokuphucula isivuno sesixhobo.

Ezi mpawu zibeka i-intshi ye-6 ukuya kwi-8-intshi ye-LN-on-Si edibeneyo edibeneyo njengento ekhethiweyo yobuchwepheshe obunqamlekileyo obufana nonxibelelwano lwe-5G, i-LiDAR, kunye ne-quantum optics.

Izicelo eziphambili

I-6-intshi ukuya kwi-8-intshi ye-LN-on-Si ehlanganisiweyo i-substrate yamkelwa ngokubanzi kumashishini aphezulu ngenxa yeempawu zayo ezikhethekileyo ze-electro-optic, piezoelectric, kunye ne-acoustic:

I-1.Unxibelelwano lwe-Optical kunye ne-Photonics edibeneyo: Ivumela i-modulators ye-electro-optic ye-high-speed, i-waveguides, kunye neesekethe ezidibeneyo ze-photonic (PICs), ukujongana neemfuno ze-bandwidth zamaziko edatha kunye ne-fiber-optic networks.

I-2.5G / 6G Izixhobo ze-RF: I-piezoelectric coefficient ephezulu ye-LN yenza ukuba ilungele i-surface acoustic wave (SAW) kunye ne-bulk acoustic wave (BAW) filters, ukuphucula ukuqhutyelwa kwesignali kwizikhululo zesiseko ze-5G kunye nezixhobo eziphathekayo.

I-3.MEMS kunye neeSensors: Impembelelo ye-piezoelectric ye-LN-on-Si iququzelela i-accelerometers ephezulu-sensitivity, i-biosensors, kunye ne-ultrasonic transducers kwizicelo zonyango kunye nezoshishino.

I-4.I-Quantum Technologies: Njengezinto ezibonakalayo ezingabonakaliyo, iifilimu ze-LN ezincinci zisetyenziselwa imithombo yokukhanya ye-quantum (umzekelo, i-photon entangled pairs) kunye ne-chips edibeneyo ye-quantum.

I-5.I-Lasers kunye ne-Nonlinear Optics: Iingqimba ze-Ultrathin ze-LN zenza i-second-harmonic generation (SHG) kunye ne-optical parametric oscillation (OPO) yezixhobo ze-laser processing kunye nohlalutyo lwe-spectroscopic.

Umgangatho we-6-intshi ukuya kwi-8-intshi ye-LN-on-Si edibeneyo edibeneyo ivumela ezi zixhobo ukuba zenziwe kwi-wafer fabs enkulu, ukunciphisa kakhulu iindleko zemveliso.

Customization kunye neeNkonzo

Sibonelela ngenkxaso yobugcisa ebanzi kunye neenkonzo zokwenza ngokwezifiso ze-intshi ezi-6 ukuya kwi-8-intshi ye-LN-on-Si ehlanganisiweyo edibeneyo ukuhlangabezana neentlobo ngeentlobo ze-R&D kunye neemfuno zemveliso:

I-1.I-Custom Fabrication: Ubukhulu befilimu ye-LN (0.3-50 μm), i-crystal orientation (i-X-cut / Y-cut), kunye ne-substrate material (Si / SiC / isafire) inokulungelelaniswa ukuze kulungiswe ukusebenza kwesixhobo.

I-2.I-Wafer-Level Processing: Ukunikezelwa kobuninzi be-6-intshi kunye ne-8-intshi ye-wafers, kubandakanywa neenkonzo zangasemva ezifana ne-dicing, i-polish, kunye ne-coating, ukuqinisekisa ukuba i-substrates ilungele ukuhlanganiswa kwesixhobo.

I-3.Ukubonisana kwezobuGcisa kunye noVavanyo: Ukubonakaliswa kwezinto eziphathekayo (umzekelo, i-XRD, i-AFM), uvavanyo lwentsebenzo ye-electro-optic, kunye nenkxaso yokulinganisa isixhobo ukukhawulezisa ukuqinisekiswa koyilo.

Injongo yethu kukuseka i-intshi ye-6 ukuya kwi-8 intshi ye-LN-on-Si edibeneyo edibeneyo njengesisombululo esisisiseko se-optoelectronic kunye ne-semiconductor applications, enikezela ngenkxaso yokuphela kokuphela ukusuka kwi-R & D ukuya kwimveliso yobuninzi.

Ukuqukumbela

I-6-intshi ukuya kwi-8-intshi ye-LN-on-Si ehlanganisiweyo substrate, kunye nobukhulu bayo obukhulu be-wafer, umgangatho ophezulu wezinto eziphathekayo, kunye nokuguquguquka, iqhuba inkqubela phambili kunxibelelwano lwamehlo, i-5G RF, kunye nobuchwepheshe be-quantum. Nokuba yeyokuvelisa umthamo ophezulu okanye izisombululo ezilungiselelwe wena, sinikezela ngama-substrates athembekileyo kunye neenkonzo ezixhasayo ukuxhobisa ukutsha kwetekhnoloji.