I-6 Intshi ye-4H SEMI Uhlobo lwe-SiC edibeneyo ye-substrate Ukutyeba 500μm TTV≤5μm ibakala le-MOS

Inkcazelo emfutshane:

Ngokuqhubela phambili ngokukhawuleza kwe-5G yonxibelelwano kunye nobuchwepheshe be-radar, i-6-inch semi-insulating ye-SiC edibeneyo ye-substrate ibe yinto engundoqo yokuvelisa izixhobo eziphezulu. Xa kuthelekiswa ne-substrates ye-GaAs yendabuko, le substrate igcina ukumelana okuphezulu (> 10⁸ Ω·cm) ngelixa iphucula i-thermal conductivity ngaphezu kwe-5x, ngokufanelekileyo ukujongana nemingeni yokutshatyalaliswa kobushushu kwizixhobo ze-millimeter-wave. Izandisi zamandla ngaphakathi kwezixhobo zemihla ngemihla ezinjengee-smartphones ze-5G kunye neetheminali zonxibelelwano ngesathelayithi kusenokwenzeka ukuba zakhiwe kule substrate. Sisebenzisa ubuxhakaxhaka bethu bobunini “bembuyekezo ye-doping ye-buffer layer”, sinciphise ukuxinana kwemibhobho ukuya ngaphantsi kwe-0.5/cm² kwaye safumana ilahleko ye-microwave ephantsi kakhulu ye-0.05 dB/mm.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iiparamitha zobugcisa

Izinto	Inkcazo	Izinto	Inkcazo
Ububanzi	150±0.2 mm	Ngaphambili (Si-face) uburhabaxa	Ra≤0.2 nm (5μm×5μm)
Iipolytype	4H	I-Edge Chip, Scratch, Crack (uhlolo olubonwayo)	Akukho nanye
Ukuxhathisa	≥1E8 Ω·cm	TTV	≤5 μm
Ukugqithisela umaleko Ukutyeba	≥0.4 μm	I-Wap	≤35 μm
Ilize (2mm>D>0.5mm)	≤5 i-ea/Wafer	Ukutyeba	500±25 μm

Ezona mpawu

1. Ukusebenza okubalaseleyo okuPhakamileyo
I-6-inch semi-insulating ye-SiC composite substrate isebenzisa idizayini ye-dielectric ehleliweyo, iqinisekisa ukuhluka kwe-dielectric rhoqo <2% kwi-Ka-band (26.5-40 GHz) kunye nokuphucula ukuhambelana kwesigaba ngama-40%. I-15% yokwandisa ukusebenza kakuhle kunye ne-20% yokusetyenziswa kwamandla aphantsi kwiimodyuli ze-T / R usebenzisa le substrate.

2. UkuPhumelela koLawulo lweThermal
Isakhiwo esidityanisiweyo "sebhulorho ye-thermal" sivumela ukuhanjiswa kwe-thermal esecaleni kwe-400 W/m·K. Kwi-28 GHz 5G isiseko se-PA modules, ukushisa kwe-junction kuphakama kuphela nge-28 ° C emva kweeyure ze-24 zokusebenza okuqhubekayo-50 ° C ngaphantsi kunezisombululo eziqhelekileyo.

3. Umgangatho weWafer oPhezulu
Ngokusebenzisa indlela yoThutho loMphunga woMzimba (PVT), sifezekisa uxinano lwe-dislocation <500/cm² kunye noKwahluka koButyenene buBonke (TTV) <3 μm.
4. UkuLungiswa koMveliso-oLuhlobo
Inkqubo yethu ye-laser annealing ephuhliswe ngokukodwa i-6-intshi ye-semi-insulating ye-SiC ehlanganisiweyo substrate inciphisa ukuxinwa kobume bomgangatho ngemiyalelo emibini yobukhulu phambi kwe-epitaxy.

Izicelo eziphambili

1. ISikhululo seSikhululo se-5G Amacandelo angundoqo
Kwii-antenna ezinkulu ze-MIMO, izixhobo ze-GaN HEMT kwi-6-inch semi-insulating SiC composite substrates zifikelela kwi-200W yokukhupha amandla kunye> 65% ukusebenza kakuhle. Iimvavanyo zentsimi kwi-3.5 GHz zibonise ukunyuka kwe-30% kwi-radius yokhuseleko.

2. IiNkqubo zoNxibelelwano ngeSatellite
I-Low-Earth orbit (LEO) i-satellite transceivers esebenzisa le substrate ibonisa i-8 dB ephezulu ye-EIRP kwi-Q-band (40 GHz) ngelixa inciphisa ubunzima nge-40%. Iitheminali ze-SpaceX Starlink ziyamkele ukuveliswa ngobuninzi.

3. IiNkqubo zeRadar zoMkhosi
Iimodyuli ze-radar ye-radar yezigaba ze-T / R kule substrate ifikelela kwi-6-18 GHz i-bandwidth kunye nenani lengxolo eliphantsi njenge-1.2 dB, ukwandisa uluhlu lokufumanisa nge-50 km kwiinkqubo ze-radar zokulumkisa kwangaphambili.

4. I-Automotive Millimeter-Wave Radar
I-79 GHz iitshiphusi ze-radar zeemoto ezisebenzisa le substrate ziphucula isisombululo se-angular ukuya kwi-0.5 °, ukuhlangabezana neemfuno zokuqhuba ezizimeleyo ze-L4.

Sinikezela ngesisombululo senkonzo esibanzi se-6-intshi ye-semi-insulating ye-SiC ehlanganisiweyo. Ngokuphathelele ukwenza izinto ngokweziko iiparamitha, sixhasa ulawulo oluchanekileyo lokumelana phakathi koluhlu lwe-10⁶-10¹⁰ Ω·cm. Ngokukodwa kwizicelo zomkhosi, sinokunikezela ngokhetho lokuxhathisa okuphezulu kwe>10⁹ Ω·cm. Inika iinkcukacha ezintathu zobukhulu be-200μm, 350μm kunye ne-500μm ngaxeshanye, kunye nokunyamezela okulawulwa ngokungqongqo ngaphakathi kwe-± 10μm, ukuhlangabezana neemfuno ezahlukeneyo ukusuka kwizixhobo eziphezulu zokujikeleza ukuya kwizicelo zamandla aphezulu.

Ngokumalunga neenkqubo zokunyanga komhlaba, sinika izisombululo ezimbini zeengcali: I-Chemical Mechanical Polishing (CMP) inokufezekisa i-atomic-level surface flatness kunye ne-Ra<0.15nm, ukuhlangabezana nezona mfuno zokukhula kwe-epitaxial; I-epitaxial ilungele itekhnoloji yonyango lomphezulu olungele iimfuno zemveliso ekhawulezileyo inokubonelela ngemiphezulu egudileyo kunye ne-Sq<0.3nm kunye nobukhulu obushiyekileyo be-oxide <1nm, ngokulula ukwenza lula inkqubo yonyango lwangaphambili ekupheleni komxhasi.

I-XKH ibonelela ngezisombululo ezibanzi ezilungiselelweyo ze-6-intshi ye-semi-insulating ye-SiC composite substrates

1. ULungiso lweParameter yeMathiriyeli
Sinikezela ngolungelelwaniso oluchanekileyo lokumelana phakathi koluhlu lwe-10⁶-10¹⁰ Ω·cm, kunye neendlela ezikhethekileyo zokumelana ne-ultra-high> 10⁹ Ω·cm ekhoyo kwizicelo zomkhosi/ze-aerospace.

2. Ukutyeba Iinkcukacha
Iinketho ezintathu zobukhulu obusemgangathweni:

· 200μm (ilungiselelwe izixhobo ezisebenza ngamaza aphezulu)

· 350μm (ubalulo olusemgangathweni)

· 500μm (yenzelwe usetyenziso lwamandla aphezulu)
· Zonke iindidi zigcina ukunyamezelwa kobunzima obuyi-±10μm.

3. IiTekhnoloji zoNyango oluphezulu

I-Chemical Mechanical Polishing (CMP): Iphumeza ukutyeba komphezulu kwinqanaba le-atomic nge-Ra<0.15nm, ukuhlangabezana neemfuno ezingqongqo zokukhula kwe-epitaxial ye-RF kunye nezixhobo zombane.

4. I-Epi-Ready Surface Processing

· Ihambisa imiphezulu egudileyo ngokweSq<0.3nm uburhabaxa

· Ilawula ubukhulu beoksidi yendalo ukuya <1nm

· Ukuphelisa ukuya kutsho kumanyathelo ama-3 okwenziwa kwangaphambili kuncedo lwabathengi