6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, iBanga leDummy

6 kwiSilicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade Featured Image

Inkcazelo emfutshane:

I-Silicon Carbide (i-SiC) iguqula imboni ye-semiconductor, ngokukodwa kumandla aphezulu, i-high-frequency, kunye ne-radiation-resistant applications. I-6-intshi ye-4H-SiC i-semi-insulating ingot, enikezelwa kwibakala le-dummy, yinto ebalulekileyo yeprototyping, uphando, kunye neenkqubo zokulinganisa. Ngebhendi ebanzi, i-thermal conductivity egqwesileyo, kunye nokuqina koomatshini, le ingot isebenza njengeyona ndlela ingabiziyo yokuvavanya kunye nokuphucula inkqubo ngaphandle kokubeka esichengeni umgangatho osisiseko ofunekayo kuphuhliso oluphambili. Le mveliso ibonelela ngeendlela ezahlukeneyo zokusetyenziswa, kubandakanywa i-electronics yamandla, izixhobo ze-radio-frequency (RF), kunye ne-optoelectronics, okwenza kube sisixhobo esixabisekileyo kumashishini kunye namaziko ophando.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

1. IiPropati zoMzimba kunye noLwakhiwo
● Uhlobo lwezinto eziphathekayo: I-Silicon Carbide (SiC)
● I-Polytype: I-4H-SiC, isakhiwo se-crystal ene-hexagonal
● Ububanzi: 6 intshi (150 mm)
● Ukutyeba: Kuyalungiseka (5-15 mm eqhelekileyo kwibakala ledummy)
● Crystal Orientation:
oPrimary: [0001] (C-plane)
oOnokukhethwa kuzo okwesibini: I-off-axis 4° yokukhulisa ukukhula kwe-epitaxial
● Ukuqhelaniswa neFlathi okuPhambili: (10-10) ± 5 °
● Ukuqhelaniswa neFlethi yesibini: 90° ngokunxamnye newotshi ukusuka kwiflethi yokuqala ± 5°

2. IiPropati zoMbane
●Ukuxhathisa:
oSemi-insulating (>106^66 Ω·cm), ilungele ukunciphisa amandla eparasitic.
● Uhlobo lweDoping:
I-doped ngokungenzeki, okubangelwa ukuxhathisa kombane ophezulu kunye nokuzinza phantsi koluhlu lweemeko zokusebenza.

3. IiPropati zeThermal
● I-Thermal Conductivity: 3.5-4.9 W / cm·K, eyenza ukutshatyalaliswa kobushushu obusebenzayo kwiinkqubo zamandla aphezulu.
● I-Coefficient yoKwandiswa kweThermal: 4.2 × 10−64.2 \ amaxesha 10 ^ {-6} 4.2 × 10−6 / K, ukuqinisekisa ukuzinza kwe-dimensional ngexesha lokulungiswa kobushushu obuphezulu.

4. IiPropati zeOptical
● I-Bandgap: I-Bandgap ebanzi ye-3.26 eV, evumela ukusebenza phantsi kombane ophezulu kunye namaqondo okushisa.
● Ukungafihli: Ukucaca okuphezulu kwi-UV kunye namaza abonakalayo abonakalayo, aluncedo kuvavanyo lwe-optoelectronic.

5. IiPropati zoomatshini
● Ubunzima: I-Mohs isikali se-9, isibini kuphela kwidayimane, iqinisekisa ukuqina ngexesha lokucubungula.
● Ubuninzi beSiphene:
oLawulwa kwiziphene ezingephi, iqinisekisa umgangatho owaneleyo wosetyenziso lwe-dummy-grade.
● Ukuthe tyaba: Ukufana nokunxaxha

Ipharamitha	Iinkcukacha	Iyunithi
IBanga	IBanga leDummy
Ububanzi	150.0 ± 0.5	mm
I-Wafer Orientation	Kwi-axis: <0001> ± 0.5 °	isidanga
Ukuxhathisa koMbane	> 1E5	Ω·cm
Ukuqhelaniswa neFlethi okuPhambili	{10-10} ± 5.0°	isidanga
Ubude beFlethi obuPhambili	Inotshi
Iintanda (UHlolo lwesibane soBumandla)	< 3 mm kwiradial	mm
Iipleyiti zeHex (UHlolo lwesibane esiPhezulu)	Indawo eyongezelekayo ≤ 5%	%
IiNdawo zePolytype (UHlolo lwesibane esiPhezulu)	Indawo eyongezelekayo ≤ 10%	%
Ukuxinana kweMibhobho	<50	cm−2^-2−2
Edge Chipping	I-3 ivunyelwe, nganye ≤ 3 mm	mm
Phawula	Ubukhulu be-wafer ye-Slicing <1 mm,> 70% (ngaphandle kweziphelo ezibini) ihlangabezana nezi mfuno zingasentla

Usetyenziso

1. IPrototyping kunye noPhando
I-dummy-grade 6-intshi ye-4H-SiC ingot yinto efanelekileyo yokwenza iprototyping kunye nophando, evumela abavelisi kunye nelabhoratri ukuba:
●Vavanya iiparamitha zenkqubo kwiChemical Vapor Deposition (CVD) okanye iPhysical Vapor Deposition (PVD).
●Phuhlisa kwaye usulungekise ubuchule bokukrola, ukupholisha, kunye nokusikwa kwe-wafer.
● Phonononga uyilo lwesixhobo esitsha phambi kokuba utshintshele kwimathiriyeli yodidi lwemveliso.

2. Ulungelelwaniso lwesixhobo kunye noVavanyo
Iipropati ze-semi-insulating zenza le ingot ixabiseke kwi:
● Ukuphonononga kunye nokulinganisa iimpawu zombane zamandla aphezulu kunye nezixhobo eziphezulu ze-frequency.
●Ukulinganisa iimeko zokusebenza kwee-MOSFET, ii-IGBTs, okanye ii-diode kwiindawo zovavanyo.
●Ukusebenza njengendawo eyongayo kwiisubstrates ezisulungekileyo ngexesha lophuhliso lwakwangoko.

3. I-Electronics yamandla
I-conductivity ephezulu ye-thermal kunye neempawu ze-bandgap ebanzi ye-4H-SiC yenza ukuba usebenze ngokufanelekileyo kumbane wamandla, kuquka:
● Amandla ombane aphezulu.
● Ii-inverters zemoto yombane (EV).
● Iinkqubo zamandla ahlaziyekayo, ezifana nee-inverters zelanga kunye nee-injini zomoya.

4. Izicelo zeRadio Frequency (RF).
Ilahleko ye-4H-SiC ye-dielectric ephantsi kunye nokuhamba kwe-electron ephezulu kwenza ukuba ifanelekele:
● Izandisi zeRF kunye neetransistor kwiziseko zonxibelelwano.
● Iinkqubo ze-radar ze-radar eziphezulu ze-aerospace kunye nezicelo zokukhusela.
● Amacandelo othungelwano olungenazingcingo kubuchwephesha obusakhulayo be-5G.

5. Izixhobo ezinganyangekiyo kwimitha
Ngenxa yokuchasana kwemvelo kwiziphene ezibangelwa yimitha, i-semi-insulating 4H-SiC ilungele:
● Izixhobo zokuhlola isithuba, kuqukwa nesathelayithi yombane kunye neenkqubo zamandla.
● Umbane owenziwe lukhuni kwimitha ukwenzela ukujonga nokulawula inyukliya.
●Izicelo zokhuselo ezifuna ukomelela kwiimeko ezigqithisileyo.

6. Optoelectronics
Ukungafihli okubonakalayo kunye nebhendi ebanzi ye-4H-SiC yenza ukusetyenziswa kwayo ku:
● Iifoto ze-UV kunye nee-LED eziphezulu zamandla.
● Ukuvavanya i-optical coatings kunye nonyango lwangaphandle.
● Iprotoyiphu yamacandelo optical for advanced sensors.

Izinto ezilungileyo zeDummy-Grade Material

Ukusebenza kakuhle kweendleko:
Ibanga le-dummy lelinye elifikelelekayo ngakumbi kuphando okanye kwibakala lemathiriyeli yemveliso, iyenza ilungele uvavanyo lwesiqhelo kunye nokuphuculwa kwenkqubo.

Ukwenziwa ngokwezifiso:
Ubungakanani obulungelelanisiweyo kunye nokuqhelaniswa kwekristale kuqinisekisa ukuhambelana noluhlu olubanzi lwezicelo.

Ukubaleka:
I-6-intshi ye-diameter ihambelana nemigangatho yoshishino, ivumela ukulinganisa okungenamthungo kwiinkqubo zebakala lokuvelisa.

Ukomelela:
Amandla aphezulu omatshini kunye nokuzinza kwe-thermal kwenza i-ingot ihlale kwaye ithembekile phantsi kweemeko zovavanyo ezahlukeneyo.

Ukuguquguquka:
Ifanelekile kumashishini amaninzi, ukusuka kwiinkqubo zamandla ukuya kunxibelelwano kunye ne-optoelectronics.

Ukuqukumbela

I-6-intshi ye-Silicon Carbide (i-4H-SiC) i-semi-insulating ingot, i-dummy grade, inika iqonga elithembekileyo neliguquguqukayo lophando, i-prototyping, kunye nokuvavanya kumacandelo eteknoloji yokusika. Iimpawu zayo ezikhethekileyo zobushushu, zombane, kunye nezomatshini, ezidityaniswe nokufikeleleka kunye nokwenziwa ngokwezifiso, kuyenza ibe sisixhobo esiyimfuneko kuzo zombini izifundiswa kunye neshishini. Ukusuka kumbane we-elektroniki ukuya kwiinkqubo ze-RF kunye nezixhobo ezenziwe lukhuni ngemitha, le ingot ixhasa ukutsha kwinqanaba ngalinye lophuhliso.
Ukufumana iinkcukacha ezithe vetshe okanye ukucela ikowuti, nceda uqhagamshelane nathi ngqo. Iqela lethu lobuchwephesha likulungele ukunceda ngezisombululo ezilungiselelwe ukuhlangabezana neemfuno zakho.