I-Silicon Carbide eyi-4H-SiC ene-Semi-Insulating Ingot eyi-6 kwi-insulation, i-Dummy Grade

I-Silicon Carbide 4H-SiC Ingot eyi-6 kwi-insulation, i-Dummy Grade Umfanekiso obonisiweyo

Inkcazo emfutshane:

ISilicon Carbide (SiC) itshintsha ishishini le-semiconductor, ngakumbi kwizicelo ezinamandla aphezulu, amaza aphezulu, kunye nokumelana nemitha. Ingot ye-6-intshi ye-4H-SiC semi-insulating, enikezelwa kwi-dummy grade, sisixhobo esibalulekileyo sokwenza iiprototyping, uphando, kunye neenkqubo zokulinganisa. Ngomsantsa omkhulu, ukuqhuba kakuhle kobushushu, kunye nokuqina koomatshini, le ingot isebenza njengokhetho olungabizi kakhulu lokuvavanya kunye nokwenza ngcono inkqubo ngaphandle kokubeka emngciphekweni umgangatho osisiseko ofunekayo kuphuhliso oluphambili. Le mveliso ijongana nezicelo ezahlukeneyo, kubandakanya izixhobo ze-elektroniki zamandla, izixhobo ze-radio-frequency (RF), kunye ne-optoelectronics, okwenza ibe sisixhobo esixabisekileyo kumashishini nakumaziko ophando.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati

1. Iimpawu zeMpawu nezeZakhiwo
●Uhlobo lwezinto: I-Silicon Carbide (i-SiC)
●I-Polytype: 4H-SiC, isakhiwo sekristale esinamahexagonal
●Ububanzi: 6 inches (150 mm)
●Ubukhulu: Inokulungiselelwa (iqhelekile kwi-5-15 mm kwi-dummy grade)
●Ukujonga iKrisimesi:
oIsiseko: [0001] (C-plane)
oIinketho zesibini: I-Off-axis 4° yokukhulisa i-epitaxial kakuhle
●Ukujonga okuSicaba okuPhambili: (10-10) ± 5°
●Ukujonga iSitrato seSibini: 90° ngokuchasene newotshi ukusuka kwiSitrato seSibini ± 5°

2. Iipropati zoMbane
●Ukumelana:
o I-Semi-insulation (>106^66 Ω·cm), ifanelekile ekunciphiseni amandla e-parasite.
●Uhlobo lokudambisa iziyobisi:
oIfakwe idosi engacwangciswanga ngabom, nto leyo ebangela ukuba i-resistivity ephezulu yombane kunye nozinzo phantsi kweemeko ezahlukeneyo zokusebenza.

3. Iipropati zobushushu
●Ukuqhuba Ubushushu: 3.5-4.9 W/cm·K, okuvumela ukusasazwa kobushushu okusebenzayo kwiinkqubo ezinamandla aphezulu.
●I-Coefficient yoKwandiswa kobushushu: 4.2×10−64.2 \izihlandlo ezili-10^{-6}4.2×10−6/K, ukuqinisekisa uzinzo olulinganayo ngexesha lokucubungula ubushushu obuphezulu.

4. Iipropati zoKubona
●Isithuba esiphakathi: Isithuba esibanzi se-bandgap se-3.26 eV, esivumela ukusebenza phantsi kwevolthi ephezulu kunye namaqondo obushushu.
●Ukucaca: Ukucaca okuphezulu kwi-UV kunye namaza okukhanya abonakalayo, okuluncedo kuvavanyo lwe-optoelectronic.

5. Iipropati zoomatshini
●Ukuqina: Isikali se-Mohs 9, silandela idayimani kuphela, siqinisekisa ukuqina ngexesha lokucubungula.
●Uxinano olupheleleyo lweziphene:
Ilawulwa ziimpazamo ezincinci ze-macro, iqinisekisa umgangatho owaneleyo wokusetyenziswa kwe-dummy-grade.
●Ukuthe tyaba: Ukufana kunye nokuphambuka

Ipharamitha	Iinkcukacha	Iyunithi
Ibanga	Ibanga elingeyonyani
Ububanzi	150.0 ± 0.5	mm
Uqeqesho lweWafer	I-On-axis: <0001> ± 0.5°	isidanga
Ukumelana nombane	> 1E5	Ω·cm
Uqhelaniso oluPhambili oluSicaba	{10-10} ± 5.0°	isidanga
Ubude obuPhambili obuSicaba	I-Notch
Iimfanta (Uhlolo lokukhanya okunamandla aphezulu)	< 3 mm kwi-radial	mm
Iipleyiti zeHex (Uhlolo loKhanyiso oluPhezulu)	Indawo eqokelelweyo ≤ 5%	%
Iindawo zePolytype (Uhlolo lokukhanya okunamandla aphezulu)	Indawo eqokelelweyo ≤ 10%	%
Uxinano lweeMipayipi ezincinci	< 50	cm−2^-2−2
Ukuqhekeza Umphetho	3 zivumelekile, nganye ≤ 3 mm	mm
Phawula	Ubukhulu be-wafer yokusika < 1 mm, > 70% (ngaphandle kweziphelo ezimbini) ziyahlangabezana neemfuno ezingentla

Izicelo

1. Umzobo kunye noPhando
Ingot ye-dummy-grade 6-intshi 4H-SiC ye-4H-SiC sisixhobo esifanelekileyo sokwenza iiprototyping kunye nophando, evumela abavelisi kunye neelabhoratri ukuba:
●Vavanya iiparameter zenkqubo kwiChemical Vapor Deposition (CVD) okanye kwiPhysical Vapor Deposition (PVD).
●Phuhlisa kwaye uphucule iindlela zokugrumba, zokupolisha, kunye nezokusika iiwafer.
●Hlola uyilo lwezixhobo ezintsha ngaphambi kokuba utshintshele kwizinto ezikumgangatho wemveliso.

2. Ukulinganisa nokuvavanya isixhobo
Iimpawu zokuthintela ukugquma zenza le ingot ibaluleke kakhulu:
●Ukuvavanya nokulinganisa iimpawu zombane zezixhobo ezinamandla aphezulu kunye nezixhobo ezisebenzisa i-frequency ephezulu.
●Ukulinganisa iimeko zokusebenza zeMOSFET, ii-IGBT, okanye iidiode kwiindawo zovavanyo.
●Isebenza njengendawo engabizi kakhulu yokutshintsha izinto ezicocekileyo ngexesha lophuhliso lwasekuqaleni.

3. Izixhobo zombane zamandla
Ukuqhuba okuphezulu kobushushu kunye neempawu ze-bandgap ebanzi ye-4H-SiC zenza ukuba kusebenze ngokufanelekileyo kwi-electronics zamandla, kuquka:
●Izixhobo zombane ezinamandla aphezulu.
●Ii-inverter zezithuthi zombane (i-EV).
●Iinkqubo zamandla ezivuselelekayo, ezifana nee-solar inverters kunye nee-wind turbines.

4. Usetyenziso lweRadio Frequency (RF)
Ukulahleka okuphantsi kwe-dielectric ye-4H-SiC kunye nokuhamba okuphezulu kwe-electron kwenza ukuba ifaneleke:
●Ii-RF amplifiers kunye nee-transistors kwiziseko zonxibelelwano.
●Iinkqubo zeradar ezisebenzisa amaza aphezulu kwizicelo zeenqwelo-moya nezokhuselo.
●Iinxalenye zenethiwekhi engenazingcingo zeteknoloji ezintsha ze-5G.

5. Izixhobo Ezimelana Nemitha
Ngenxa yokuchasana kwayo ngokwemvelo neziphene ezibangelwa yimitha, i-4H-SiC ethintela ubushushu obuphantsi ifanelekile kwezi zinto zilandelayo:
●Izixhobo zokuhlola isithuba, kuquka izixhobo ze-elektroniki zesathelayithi kunye neenkqubo zamandla.
●Ii-elektroniki eziqiniswe ngemitha ukuze zijongwe kwaye zilawulwe yinyukliya.
●Izicelo zokhuselo ezifuna ukuqina kwiindawo eziyingozi kakhulu.

6. I-Optoelectronics
Ukukhanya okubonakalayo kunye ne-bandgap ebanzi ye-4H-SiC ivumela ukusetyenziswa kwayo kwi:
●Iifoto ze-UV kunye nee-LED ezinamandla aphezulu.
●Ukuvavanya ukugqunywa kwezinto ezibonakalayo kunye nonyango lomphezulu.
●Izixhobo ezibonakalayo ze-prototyping zee-sensors eziphambili.

Iingenelo zezinto ezikumgangatho ophantsi

Ukusebenza kakuhle kweendleko:
Uhlobo olungelulo lokwenyani lolunye uhlobo olufikelelekayo kunophando okanye izixhobo ezikumgangatho wemveliso, nto leyo eyenza ukuba lube lolona lufanelekileyo kuvavanyo oluqhelekileyo kunye nokuphuculwa kwenkqubo.

Ukwenziwa ngokwezifiso:
Ubukhulu obucwangcisiweyo kunye neendlela zekristale ziqinisekisa ukuhambelana nezicelo ezahlukeneyo.

Ukukhula:
Ububanzi obuziisentimitha ezi-6 buhambelana nemigangatho yoshishino, nto leyo evumela ukwandiswa okungenamthungo kwiinkqubo zezinga lokuvelisa.

Ukuqina:
Amandla aphezulu oomatshini kunye nokuzinza kobushushu kwenza i-ingot ihlale ixesha elide kwaye ithembeke phantsi kweemeko ezahlukeneyo zovavanyo.

Ukuguquguquka:
Ifanelekile kumashishini amaninzi, ukusuka kwiinkqubo zamandla ukuya kunxibelelwano kunye ne-optoelectronics.

Isiphelo

I-silicon Carbide (4H-SiC) ene-semi-insulating ingot eyi-6-intshi, i-dummy grade, inika iqonga elithembekileyo neliguquguqukayo lophando, i-prototyping, kunye novavanyo kumacandelo obuchwepheshe obuphambili. Iipropati zayo ezibalaseleyo zobushushu, zombane, kunye nezoomatshini, kunye nokufikeleleka kunye nokukwazi ukuzenza ngokwezifiso, zenza ukuba ibe yinto ebalulekileyo kwimfundo nakwishishini. Ukususela kwii-elektroniki zamandla ukuya kwiinkqubo ze-RF kunye nezixhobo eziqiniswe yimitha, le ingot ixhasa ubuchule kuzo zonke izigaba zophuhliso.
Ukuze ufumane iinkcukacha ezithe vetshe okanye ucele ikowuteshini, nceda unxibelelane nathi ngqo. Iqela lethu lobuchwephesha likulungele ukukunceda ngezisombululo ezenzelwe wena ukuhlangabezana neemfuno zakho.