4inch SiC Epi wafer for MOS okanye SBD

Inkcazelo emfutshane:

I-SiCC ine-SiC epheleleyo (i-Silicon Carbide) yomgca wokuvelisa i-wafer substrate, edibanisa ukukhula kwekristale, ukusetyenzwa kwe-wafer, ukwakhiwa kwe-wafer, ukupolisha, ukucocwa kunye nokuvavanya. Okwangoku, sinokubonelela nge-axial okanye i-off-axis semi-insulating kunye ne-semi-conductive 4H kunye ne-6H ye-SiC wafers ezinobungakanani be-5x5mm2, 10x10mm2, 2 ″, 3 ″, 4 ″ kunye ne-6 ″, ukuqhekeza ukucinezelwa kwesiphene, ukusetyenzwa kwekristale. kunye nokukhula okukhawulezayo kunye nezinye Kuye kwaqhawuka ngokusebenzisa itekhnoloji engundoqo ezifana ukunyanzeliswa kwesiphene, ukusetyenzwa kwembewu yekristale kunye nokukhula okukhawulezayo, kunye nokukhuthaza uphando olusisiseko kunye nophuhliso lwe-silicon carbide epitaxy, izixhobo kunye nolunye uphando olusisiseko olunxulumeneyo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Epitaxy ibhekisa ekukhuleni komgangatho ophezulu wesixhobo sekristale enye kumphezulu we-silicon carbide substrate. Phakathi kwazo, ukukhula kwe-gallium nitride epitaxial layer kwi-semi-insulating silicon carbide substrate ibizwa ngokuba yi-heterogeneous epitaxy; Ukukhula kwe-silicon carbide epitaxial layer kumphezulu we-silicon carbide substrate ebizwa ngokuba yi-homogeneous epitaxy.

I-Epitaxial ihambelana neemfuno zoyilo lwesixhobo sokukhula komgangatho oyintloko wokusebenza, ubukhulu becala imisela ukusebenza kwe-chip kunye nesixhobo, ixabiso le-23%. Ezona ndlela ziphambili ze-SiC ifilimu ebhityileyo i-epitaxy kweli nqanaba ibandakanya: i-chemical vapor deposition (CVD), i-molecular beam epitaxy (MBE), i-liquid phase epitaxy (LPE), kunye ne-pulsed laser deposition kunye ne-sublimation (PLD).

I-Epitaxy likhonkco elibaluleke kakhulu kulo lonke ishishini. Ngokukhulisa i-GaN epitaxial layers kwi-semi-insulating silicon carbide substrates, ii-wafers ze-GaN epitaxial ezisekelwe kwi-silicon carbide ziveliswa, ezinokuthi zenziwe ngakumbi kwizixhobo ze-GaN RF ezifana ne-electron mobility transistors ephezulu (HEMTs);

Ngokukhulisa i-silicon carbide epitaxial layer kwi-conductive substrate ukuze ufumane i-silicon carbide epitaxial wafer, kunye ne-epitaxial layer ekwenzeni i-Schottky diodes, i-gold-oksijini ye-half-field effect transistors, i-insulated gate bipolar transistors kunye nezinye izixhobo zamandla, ngoko umgangatho i-epitaxial ekusebenzeni kwesixhobo yimpembelelo enkulu kakhulu kuphuhliso loshishino nayo idlala indima ebaluleke kakhulu.