I-wafer ye-SiC Epi ye-4intshi ye-MOS okanye ye-SBD

I-Epitaxy ibhekisa ekukhuleni komaleko wezinto zekristale enye ezikumgangatho ophezulu kumphezulu we-substrate ye-silicon carbide. Phakathi kwazo, ukukhula komaleko we-gallium nitride epitaxial kwi-substrate ye-silicon carbide e-semi-insulating kubizwa ngokuba yi-heterogeneous epitaxy; ukukhula komaleko we-silicon carbide epitaxial kumphezulu we-substrate ye-silicon carbide eqhubayo kubizwa ngokuba yi-homogeneous epitaxy.

I-Epitaxial ihambelana neemfuno zoyilo lwesixhobo sokukhula komaleko osebenzayo oyintloko, imisela kakhulu ukusebenza kwe-chip kunye nesixhobo, ixabiso le-23%. Iindlela eziphambili ze-SiC thin film epitaxy kweli nqanaba ziquka: i-chemical vapor deposition (CVD), i-molecular beam epitaxy (MBE), i-liquid phase epitaxy (LPE), kunye ne-pulsed laser deposition kunye ne-sublimation (PLD).

I-Epitaxy likhonkco elibaluleke kakhulu kulo lonke eli shishini. Ngokukhulisa iileya ze-epitaxial ze-GaN kwi-semi-insulating silicon carbide substrates, ii-GaN epitaxial wafers ezisekelwe kwi-silicon carbide ziyaveliswa, ezinokwenziwa ngakumbi zibe zizixhobo ze-GaN RF ezifana nee-transistors ze-electron mobility eziphezulu (HEMTs);

Ngokukhulisa umaleko we-epitaxial we-silicon carbide kwi-substrate eqhubayo ukuze ufumane i-epitaxial wafer ye-silicon carbide, nakwi-epitaxial umaleko ekuvelisweni kwee-diode ze-Schottky, ii-transistors ze-half-field effect ze-gold-oxygen, ii-transistors ze-bipolar ezifakwe i-insulated gate kunye nezinye izixhobo zamandla, ngoko ke umgangatho we-epitaxial ekusebenzeni kwesixhobo unempembelelo enkulu kakhulu kuphuhliso lweshishini, nalo lidlala indima ebaluleke kakhulu.