4inch SiC Epi wafer for MOS okanye SBD

Inkcazelo emfutshane:

I-SiCC ine-SiC epheleleyo (i-Silicon Carbide) yomgca wokuvelisa i-wafer substrate, edibanisa ukukhula kwekristale, ukusetyenzwa kwe-wafer, ukwakhiwa kwe-wafer, ukupolisha, ukucocwa kunye nokuvavanya.Okwangoku, sinokubonelela nge-axial okanye i-off-axis semi-insulating kunye ne-semi-conductive 4H kunye ne-6H ye-SiC wafers ezinobungakanani be-5x5mm2, 10x10mm2, 2 ″, 3 ″, 4 ″ kunye ne-6 ″, ukuqhekeza ukucinezelwa kwesiphene, ukusetyenzwa kwekristale. kunye nokukhula okukhawulezayo kunye nokunye Kuphule kwiiteknoloji eziphambili ezifana nokunciphisa isiphene, ukusetyenzwa kwembewu yekristale kunye nokukhula okukhawulezayo, kunye nokukhuthaza uphando olusisiseko kunye nophuhliso lwe-silicon carbide epitaxy, izixhobo kunye nolunye uphando olusisiseko olunxulumeneyo.

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I-Epitaxy ibhekisa ekukhuleni koqweqwe oluphezulu lwemathiriyeli yekristale enye kumphezulu we-silicon carbide substrate.Phakathi kwabo, ukukhula kwe-gallium nitride epitaxial layer kwi-semi-insulating silicon carbide substrate ibizwa ngokuba yi-heterogeneous epitaxy;Ukukhula kwe-silicon carbide epitaxial layer kumphezulu we-silicon carbide substrate ebizwa ngokuba yi-homogeneous epitaxy.

I-Epitaxial ihambelana neemfuno zoyilo lwesixhobo sokukhula komgangatho oyintloko wokusebenza, ubukhulu becala imisela ukusebenza kwe-chip kunye nesixhobo, ixabiso le-23%.Ezona ndlela ziphambili ze-SiC ifilimu ebhityileyo i-epitaxy kweli nqanaba ibandakanya: i-chemical vapor deposition (CVD), i-molecular beam epitaxy (MBE), i-liquid phase epitaxy (LPE), kunye ne-pulsed laser deposition kunye ne-sublimation (PLD).

I-Epitaxy likhonkco elibaluleke kakhulu kulo lonke ishishini.Ngokukhulisa i-GaN epitaxial layers kwi-semi-insulating silicon carbide substrates, ii-wafers ze-GaN epitaxial ezisekelwe kwi-silicon carbide ziveliswa, ezinokuthi zenziwe ngakumbi kwizixhobo ze-GaN RF ezifana ne-electron mobility transistors ephezulu (HEMTs);

Ngokukhulisa i-silicon carbide epitaxial layer kwi-conductive substrate ukuze ufumane i-silicon carbide epitaxial wafer, kunye ne-epitaxial layer ekwenzeni i-Schottky diodes, i-gold-oksijini ye-half-field effect transistors, i-insulated gate bipolar transistors kunye nezinye izixhobo zamandla, ngoko umgangatho i-epitaxial ekusebenzeni kwesixhobo yimpembelelo enkulu kakhulu kuphuhliso loshishino nayo idlala indima ebaluleke kakhulu.