Iiwafer zeSiC ezi-4 intshi ezingcolisayo zeHPSI SiC substrate Prime Production grade

Iiwafer zeSiC ezi-4 intshi ezingenanto yokuzihlamba ii-HPSI SiC substrate Prime Production grade Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ipleyiti yokupolisha ye-silicon carbide ene-high-purity eyi-4-intshi e-semi-insulated isetyenziswa kakhulu kunxibelelwano lwe-5G nakwezinye iindawo, kunye neenzuzo zokuphucula uluhlu lwamaza erediyo, ukuqondwa komgama omde kakhulu, ukulwa nokuphazamiseka, ukuhanjiswa kolwazi ngesantya esiphezulu, kunye nezinye izinto ezisetyenziswayo, kwaye ithathwa njengesiseko esifanelekileyo sokwenza izixhobo zamandla e-microwave.

Thumela i-imeyile kuthi

Iimbonakalo

Iinkcukacha zeMveliso

I-Silicon carbide (SiC) yinto eyenziwe nge-compound semiconductor eyenziwe ngezinto ze-carbon kunye ne-silicon, kwaye yenye yezona zinto zifanelekileyo zokwenza izixhobo ezishushu kakhulu, eziphindaphindayo, ezinamandla aphezulu kunye ne-voltage ephezulu. Xa kuthelekiswa nezinto ze-silicon zemveli (Si), ububanzi bebhendi engavumelekanga ye-silicon carbide buphindwe kathathu kune-silicon; i-thermal conductivity iphindwe ka-4-5 kune-silicon; i-breakdown voltage iphindwe ka-8-10 kune-silicon; kwaye i-electron saturation drift rate iphindwe ka-2-3 kune-silicon, ehlangabezana neemfuno zoshishino lwanamhlanje zamandla aphezulu, amandla aphezulu, kunye namaza aphezulu, kwaye isetyenziselwa kakhulu ukwenza izixhobo ze-elektroniki ezikhawulezayo, eziphindaphindayo, amandla aphezulu kunye nokukhanya, kwaye iindawo zayo zokusetyenziswa ziquka i-smart grid, izithuthi zamandla amatsha, amandla omoya e-photovoltaic, unxibelelwano lwe-5G, njl. Kwicandelo lezixhobo zamandla, ii-silicon carbide diodes kunye nee-MOSFETs ziqalile ukusetyenziswa kurhwebo.

Iingenelo zee-SiC wafers/i-SiC substrate

Ukumelana nobushushu obuphezulu. Ububanzi bebhendi engavumelekanga ye-silicon carbide buphindwe ka-2-3 kunobe-silicon, ngoko ke ii-electron azinakwenzeka ukuba zitsibe kubushushu obuphezulu kwaye zinokumelana nobushushu obuphezulu bokusebenza, kwaye ukuhanjiswa kobushushu kwe-silicon carbide kuphindwe ka-4-5 kunobe-silicon, okwenza kube lula ukukhupha ubushushu kwisixhobo kwaye kuvumele ubushushu obuphezulu bokusebenza obunomda. Iimpawu zobushushu obuphezulu zinokunyusa kakhulu uxinano lwamandla, ngelixa zinciphisa iimfuno zenkqubo yokusasaza ubushushu, zenze i-terminal ibe lula kwaye ibe ncinci.

Ukumelana nombane ophezulu. Amandla entsimi yokuqhekeka kwe-silicon carbide aphindwe kalishumi kune-silicon, nto leyo eyenza ukuba ikwazi ukumelana nombane ophezulu, nto leyo eyenza ukuba ifaneleke ngakumbi kwizixhobo ezinombane ophezulu.

Ukumelana ne-frequency ephezulu. I-silicon carbide inesantya sokutyibilika kwe-electron esiphindwe kabini kune-silicon, nto leyo ebangela ukuba izixhobo zayo kwinkqubo yokuvala azikho kwimeko yokutsala yangoku, inokuphucula ngempumelelo i-frequency yokutshintsha kwesixhobo, ukuze kufezekiswe ukwenziwa kwe-miniaturization yesixhobo.

Ukulahleka kwamandla aphantsi. I-silicon carbide inokumelana okuphantsi kakhulu xa kuthelekiswa nezixhobo ze-silicon, ilahleko ephantsi yokuqhuba; kwangaxeshanye, i-bandwidth ephezulu ye-silicon carbide inciphisa kakhulu ukuvuza komsinga, ilahleko yamandla; ukongeza, izixhobo ze-silicon carbide kwinkqubo yokuvala azikho kwimeko yokutsalwa kwangoku, ilahleko ephantsi yokutshintsha.