4inch 6inch 8inch SiC Crystal Growth Furnace for CVD Process

4inch 6inch 8inch SiC Crystal Growth Furnace yeCVD Inkqubo ebonisiweyo

Inkcazelo emfutshane:

I-XKH's SiC Crystal yokuKhula iFurnace CVD Chemical Vapor Deposition system isebenzisa iteknoloji yokubeka umphunga wekhemikhali ehamba phambili yehlabathi, eyilelwe ngokukodwa ukukhula kwekristale eyodwa yeSiC. Ngokusebenzisa ulawulo oluchanekileyo lweeparamitha zenkqubo kubandakanya ukuhamba kwegesi, ubushushu kunye noxinzelelo, ivumela ukukhula kwekristale yeSiC elawulwayo kwi-4-8 intshi substrates. Le nkqubo ye-CVD inokuvelisa iindidi ze-crystal ze-SiC ezibandakanya uhlobo lwe-4H / 6H-N kunye ne-4H / 6H-SEMI uhlobo lwe-insulating, ukubonelela ngezisombululo ezipheleleyo kwizixhobo ukuya kwiinkqubo. Inkqubo ixhasa iimfuno zokukhula kwee-intshi ezi-2-12 zamawafa, iyenza ifaneleke ngokukodwa ukuveliswa kobunzima bombane kunye nezixhobo zeRF.

Thumela i-imeyile kuthi

Iimbonakalo

UmGaqo wokuSebenza

Umgaqo ongundoqo wenkqubo yethu ye-CVD ibandakanya ukuchithwa kwe-thermal ye-silicon-containing (umzekelo, i-SiH4) kunye ne-carbon-containing (umzekelo, i-C3H8) i-precursor gases kumaqondo okushisa aphezulu (ngokuqhelekileyo i-1500-2000 ° C), ukubeka i-crystals ye-SiC enye kwi-substrates ngokusebenzisa i-gas-phase chemical reactions. Le teknoloji ifaneleke ngokukodwa ukuvelisa ucoceko oluphezulu (> 99.9995%) 4H / 6H-SiC iikristale enye eneziphene eziphantsi (<1000 / cm²), ukuhlangabezana neemfuno ezingqongqo zezinto zombane kunye nezixhobo zeRF. Ngolawulo oluchanekileyo lokubunjwa kwegesi, izinga lokuhamba kunye neqondo lokushisa, inkqubo yenza ukulawulwa ngokuchanekileyo kohlobo lwe-crystal conductivity (uhlobo lwe-N / P) kunye nokumelana.

Iintlobo zeNkqubo kunye neeParameters zobuGcisa

Uhlobo lweNkqubo	Uluhlu lobushushu	Ezona mpawu	Usetyenziso
High-Temp CVD	1500-2300°C	Ukufudumeza kwegraphite, ± 5 °C ubushushu obufanayo	Ukukhula kwekristale yeSiC eninzi
I-Hot-Filament CVD	800-1400°C	Ukufudumeza i-Tungsten filament, i-10-50μm / h ireyithi yokubeka	SiC epitaxy engqingqwa
VPE CVD	1200-1800°C	Ulawulo lobushushu bendawo ezininzi,> 80% ukusetyenziswa kwegesi	Ukuveliswa kwe-epi-wafer enkulu
I-PECVD	400-800°C	I-Plasma iphuculwe, i-1-10μm / h ireyithi yokubeka	Iifilimu ezincinci ze-SiC ezinobushushu obuphantsi

Iimpawu zobuGcisa eziphambili

1. Inkqubo yokulawula ubushushu obukwizinga eliphezulu
Isithando somlilo sinenkqubo yokufudumeza yokumelana nemimandla emininzi ekwaziyo ukugcina amaqondo obushushu ukuya kuthi ga kwi-2300 ° C kunye ne-± 1 ° C efanayo kulo lonke igumbi lokukhula. Olu lawulo luchanekileyo lwe-thermal lufezekiswa ngolu hlobo:
I-12 ilawulwa ngokuzimeleyo kwiindawo zokufudumeza.
I-Redundant thermocouple monitoring (Uhlobo C W-Re).
I-algorithms yokulungiswa kweprofayili yexesha langempela.
Iindonga zegumbi ezipholileyo ngamanzi zolawulo lwe-thermal gradient.

2. Ukuhanjiswa kweGesi kunye neTekhnoloji yokuxuba
Inkqubo yethu yokuthengisa irhasi yobunini iqinisekisa ukuxubana kwangaphambili kunye nokuhanjiswa okufanayo:
Izilawuli zokuqukuqela kobuninzi ngokuchaneka kwe-±0.05sccm.
Isitofu segesi enamanqaku amaninzi.
Ukujongwa kokwakheka kwerhasi kwindawo (i-FTIR spectroscopy).
Imbuyekezo yokuhamba ngokuzenzekelayo ngexesha lokukhula kwemijikelo.

3. Ukuphuculwa koMgangatho weCrystal
Inkqubo ibandakanya iinguqulelo ezininzi zokuphucula umgangatho wekristale:
Isibambi sesubstrate esijikelezayo (0-100rpm programmable).
Itekhnoloji yolawulo oluphezulu lomda.
Inkqubo yokubeka iliso kwisiphene (i-UV laser scattering).
Imbuyekezo yoxinzelelo oluzenzekelayo ngexesha lokukhula.

4. Inkqubo yokuzenzekela kunye noLawulo
Ukwenziwa kweresiphi ezenzekelayo.
Ixesha lokwenyani lokukhula kweparamitha yokwandisa i-AI.
Ukubekwa esweni okude kunye noxilongo.
I-1000+ yokungena kwedatha yepharamitha (igcinwe iminyaka emi-5).

5. Iimpawu zoKhuseleko kunye nokuthembeka
Ukhuseleko oluphindwe kathathu lobushushu obugqithileyo.
Inkqubo yokucoca ngokukhawuleza.
Uyilo lwesakhiwo esilinganiswe yinyikima.
I-98.5% yokuqinisekisa ixesha lokuphumla.

6. I-Scalable Architecture
Uyilo lwemodyuli luvumela ukuphuculwa kwamandla.
Iyahambelana ne-100mm ukuya kwi-200mm yeesayizi ze-wafer.
Ixhasa ulungelelwaniso oluthe nkqo noluthe tye.
Amacandelo okutshintsha ngokukhawuleza ukugcinwa.

7. Ukusebenza kakuhle kwamandla
I-30% yokusetyenziswa kwamandla aphantsi kuneenkqubo ezifaniswayo.
Inkqubo yokubuyisela ubushushu ibamba i-60% yobushushu benkunkuma.
I-algorithms yokusetyenziswa kwegesi ephuculweyo.
Iimfuno zoncedo oluhambelana ne-LEED.

8. Izinto eziNxulutywayo ezahlukeneyo
Ikhulisa zonke iipolytypes ezinkulu zeSiC (4H, 6H, 3C).
Ixhasa zombini i-conductive kunye ne-semi-insulating variants.
Ivumela iinkqubo ezahlukeneyo ze-doping (uhlobo lwe-N, uhlobo lwe-P).
Iyahambelana nezinye izandulela (umz., TMS, TES).

9. Ukusebenza kweNkqubo yeVacuum
Uxinzelelo olusisiseko: <1×10⁻⁶ Torr
Ireyithi yokuvuza: <1×10⁻⁹ Torr·L/sec
Isantya sokumpompa: 5000L/s (yeSiH₄)

Ukulawula uxinzelelo oluzenzekelayo ngexesha lokukhula kwemijikelezo
Le nkcazelo yobugcisa ibanzi ibonisa amandla enkqubo yethu ukuvelisa iikristale zeSiC zomgangatho wophando kunye nomgangatho wemveliso kunye nokuhambelana okuhamba phambili kwishishini kunye nesivuno. Indibaniselwano yolawulo oluchanekileyo, ukujonga okuphambili, kunye nobunjineli obomeleleyo benza le nkqubo ye-CVD ibe lolona khetho lufanelekileyo kuzo zombini i-R&D kunye nezicelo zokwenziwa komthamo kumbane wamandla, izixhobo zeRF, kunye nezinye izicelo eziphambili zesemiconductor.

Izinto Eziluncedo Ezingundoqo

1. Ukukhula kweCrystal ekumgangatho ophezulu
• Uxinaniso lwesiphene lusezantsi njenge<1000/cm² (4H-SiC)
• Ukufana kwedoping <5% (ii-intshi ezisi-6)
• Ubunyulu beCrystal >99.9995%

2. Ubungakanani obukhulu beMveliso
• Ixhasa ukuya kuthi ga kwi-8-intshi yokukhula kwe-wafer
• Ukulingana kwediameter >99%
• Umahluko wokutyeba <±2%

3. Ulawulo lweNkqubo echanekileyo
• Ukuchaneka kokulawula ubushushu ±1°C
• Ukuchaneka kolawulo lokuhamba kwerhasi ±0.1sccm
• Ukuchaneka kolawulo loxinzelelo ±0.1Torr

4. Ukusebenza kakuhle kwamandla
• I-30% yokusetyenziswa kwamandla ngaphezu kweendlela eziqhelekileyo
• Izinga lokukhula ukuya kuma-50-200μm/h
• Ixesha lokuphumla kwezixhobo >95%

Usetyenziso oluphambili

1. Izixhobo ze-Electronic Power
I-6-intshi ye-4H-SiC substrates ye-1200V + MOSFETs / diode, ukunciphisa ilahleko yokutshintsha nge-50%.

2. Unxibelelwano lwe-5G
I-Semi-insulating SiC substrates (i-resistivity>10⁸Ω·cm) ye-base station PAs, kunye nelahleko yokufaka <0.3dB kwi>10GHz.

3. Izithuthi zaMandla amatsha
Iimodyuli zamandla e-SiC ye-Automotive-grade zandisa uluhlu lwe-EV nge-5-8% kunye nokunciphisa ixesha lokutshaja ngama-30%.

4. Abaguquleli bePV
Iisubstrates ezineziphene ezisezantsi zonyusa ukusebenza kakuhle koguqulo ngaphaya kwe-99% ngelixa zinciphisa ubungakanani benkqubo ngama-40%.

Iinkonzo ze-XKH

1. Iinkonzo zokuLungisa
Iinkqubo zeCVD ezilungiselelwe i-4-8 intshi.
Ixhasa ukukhula kohlobo lwe-4H / 6H-N, uhlobo lwe-4H / 6H-SEMI lwe-insulating, njl.

2. Inkxaso yoBugcisa
Uqeqesho olubanzi malunga nokusebenza kunye nokuphucula inkqubo.
24/7 impendulo yobugcisa.

3. Turnkey Solutions
Iinkonzo zokuphela-kuya-ekupheleni ukusuka kufakelo ukuya kwinkqubo yokuqinisekiswa.

4. Ukubonelelwa ngezinto eziphathekayo
2-12 intshi SiC substrates / epi-wafers ezikhoyo.
Ixhasa i-4H / 6H / 3C iipolytypes.

Izahlulo eziphambili ziquka:
Ukuya kuthi ga kwi-8-intshi yesakhono sokukhula kwekristale.
I-20% yezinga lokukhula ngokukhawuleza kunomndilili woshishino.
98% ukuthembeka kwenkqubo.
Iphakheji epheleleyo yenkqubo yokulawula ehlakaniphile.