Imbewu ye-4H-N Dia205mm yeSiC evela eTshayina P kunye nenqanaba le-D leMonocrystaline
Indlela ye-PVT (i-Physical Vapor Transport) yindlela eqhelekileyo esetyenziselwa ukukhulisa i-silicon carbide crystals enye. Kwinkqubo yokukhula ye-PVT, i-silicon carbide enye ikristale imathiriyeli ifakwa ngumphunga womzimba kunye nothutho olugxile kwiikristale zembewu ye-silicon carbide, ukuze i-silicon carbide entsha iikristale zikhule ecaleni kwesakhiwo seekristale zembewu.
Kwindlela ye-PVT, i-silicon carbide seed crystal idlala indima ephambili njengendawo yokuqala kunye nethemplate yokukhula, echaphazela umgangatho kunye nesakhiwo se-crystal eyodwa yokugqibela. Ngethuba lenkqubo yokukhula kwe-PVT, ngokulawula iiparitha ezifana neqondo lokushisa, uxinzelelo kunye nokubunjwa kwesigaba segesi, ukukhula kwe-silicon carbide i-crystals enye inokuqondwa ukuba yenze ubungakanani obukhulu, obuphezulu bezinto eziphathekayo ze-crystal eyodwa.
Inkqubo yokukhula egxile kwi-silicon carbide seed crystals yindlela ye-PVT ibaluleke kakhulu kwimveliso ye-silicon carbide iikristale enye, kwaye idlala indima ephambili ekufumaneni umgangatho ophezulu, ubungakanani obukhulu be-silicon carbide enye-crystal imathiriyeli.
I-8inch ye-SiCseed crystal esiyinikezelayo inqabile kakhulu kwimarike ngoku. Ngenxa yobunzima bobugcisa obuphezulu, uninzi lweefektri azikwazi ukubonelela ngeekristale zembewu ezinkulu. Nangona kunjalo, enkosi kubudlelwane bethu obude kunye nolusondeleyo kumzi-mveliso we-silicon carbide waseTshayina, sinokubonelela abathengi bethu ngesi siqwenga sembewu se-silicon ye-8-intshi. Ukuba unazo naziphi na iimfuno, nceda uzive ukhululekile ukuqhagamshelana nathi. Singabelana nawe ngeenkcukacha kuqala.