Imbewu ye-4H-N Dia205mm SiC evela eTshayina iMonocrystaline ye-P kunye ne-D grade

Indlela ye-PVT (Physical Vapor Transport) yindlela eqhelekileyo esetyenziswa ekukhuliseni iikristale ze-silicon carbide single. Kwinkqubo yokukhula kwe-PVT, izinto ze-silicon carbide single crystal zifakwa ngokufuma ngokwasemzimbeni kunye nokuthutha okujoliswe kwiikristale zembewu ye-silicon carbide, ukuze iikristale ezintsha ze-silicon carbide single zikhule ecaleni kwesakhiwo seekristale zembewu.

Kwindlela ye-PVT, ikristale yembewu ye-silicon carbide idlala indima ebalulekileyo njengendawo yokuqala kunye netemplate yokukhula, ichaphazela umgangatho kunye nolwakhiwo lwekristale enye yokugqibela. Ngexesha lenkqubo yokukhula kwe-PVT, ngokulawula iiparameter ezifana nobushushu, uxinzelelo kunye nokwakheka kwesigaba segesi, ukukhula kweekristale enye ye-silicon carbide kunokufezekiswa ukwenza izinto ezinkulu nezikumgangatho ophezulu zekristale enye.

Inkqubo yokukhula egxile kwiikristale zembewu ye-silicon carbide ngendlela ye-PVT ibaluleke kakhulu ekuvelisweni kweekristale ze-silicon carbide single, kwaye idlala indima ebalulekileyo ekufumaneni izixhobo ze-silicon carbide single-crystal ezikumgangatho ophezulu nezinkulu.

Ikristale ye-SiCseed ye-8inch esiyinikezelayo ayifumaneki lula kwimarike okwangoku. Ngenxa yobunzima obuphezulu bobuchwephesha, uninzi lweefektri azikwazi ukubonelela ngeekristale zembewu ezinkulu. Nangona kunjalo, ngenxa yobudlelwane bethu obude nobusondeleyo nefektri ye-silicon carbide yaseTshayina, singabonelela abathengi bethu ngale wafer yembewu ye-silicon carbide ye-8-intshi. Ukuba unayo nayiphi na imfuno, nceda uzive ukhululekile ukunxibelelana nathi. Singabelana nawe ngeenkcukacha kuqala.