I-4H-N 4 intshi yeSiC substrate wafer iSilicon Carbide Production Dummy ibakala loPhando

Inkcazelo emfutshane:

I-4-intshi ye-silicon carbide enye ye-crystal substrate wafer sisixhobo esisebenza kakhulu esineempawu zomzimba kunye neekhemikhali ezibalaseleyo. Yenziwe ngezinto ezicocekileyo ze-silicon carbide enye yekristale ene-conductivity egqwesileyo ye-thermal, ukuzinza komatshini kunye nokumelana nobushushu obuphezulu. Ndiyabulela kwinkqubo yokulungiswa kokuchaneka okuphezulu kunye nezixhobo eziphezulu, le chip yenye yezinto ezikhethiweyo zokulungiswa kwezixhobo zombane eziphezulu kwiinkalo ezininzi.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Usetyenziso

I-4-intshi ye-silicon carbide enye i-crystal substrate wafers idlala indima ebalulekileyo kwiinkalo ezininzi. Okokuqala, isetyenziswe ngokubanzi kwishishini le-semiconductor ekulungiseleleni izixhobo zombane eziphezulu zamandla ezifana ne-transistors yamandla, iisekethe ezidibeneyo kunye neemodyuli zamandla. I-conductivity yayo ephezulu ye-thermal kunye nokumelana nokushisa okuphezulu kwenza ukuba ikhuphe ukushisa ngcono kwaye inikeze ukusebenza kakuhle kunye nokuthembeka. Okwesibini, ii-silicon carbide wafers zikwasetyenziswa kwindawo yophando ukwenza uphando kwizinto ezintsha kunye nezixhobo. Ukongeza, ii-silicon carbide wafers zikwasetyenziswa ngokubanzi kwi-optoelectronics, njengokwenziwa kweeledi kunye ne-laser diode.

Iinkcukacha ze-4inch SiC wafer

I-4-intshi yesilicon carbide enye icrystal substrate wafer idayamitha ye-intshi ezi-4 (malunga ne-101.6mm), ukugqiba umphezulu ukuya kwi-Ra <0.5 nm, ubukhulu be-600±25 μm. I-conductivity ye-wafer luhlobo lwe-N okanye uhlobo lwe-P kwaye lunokwenziwa ngokwezifiso ngokweemfuno zabathengi. Ukongeza, i-chip nayo inozinzo oluhle kakhulu lomatshini, inokumelana noxinzelelo oluthile kunye nokungcangcazela.

I-intshi ye-silicon carbide enye ye-crystal substrate wafer yinto esebenza kakhulu esetyenziswa ngokubanzi kwi-semiconductor, uphando kunye neendawo ze-optoelectronics. Ine-conductivity egqwesileyo ye-thermal, ukuzinza komatshini kunye nokumelana nokushisa okuphezulu, okufanelekileyo ukulungiselela izixhobo zombane zamandla aphezulu kunye nophando lwezinto ezintsha. Sinikezela ngeentlobo ezahlukeneyo zokucaciswa kunye neendlela zokwenza ngokwezifiso ukuhlangabezana neemfuno ezahlukeneyo zabathengi. Nceda uqaphele indawo yethu ezimeleyo ukuze ufunde ngakumbi malunga nolwazi lwemveliso ye-silicon carbide wafers.

Imisebenzi ephambili: I-silicon carbide wafers, i-silicon carbide enye i-crystal substrate wafers, i-intshi ezi-4, i-thermal conductivity, ukuzinza komatshini, ukumelana nobushushu obuphezulu, ii-transistors zamandla, iisekethe ezidibeneyo, iimodyuli zamandla, ii-led, i-laser diode, ukugqitywa komphezulu, ukuhanjiswa, ukhetho lwesiko.