I-4H-N 4 intshi ye-SiC substrate wafer yeSilicon Carbide Production Dummy Research grade

Inkcazo emfutshane:

I-wafer ye-silicon carbide enye ye-intshi ezi-4 ye-substrate ye-silicon carbide sisixhobo esisebenza kakuhle kakhulu esineempawu zomzimba nezekhemikhali ezibalaseleyo. Senziwe ngezinto ze-silicon carbide enye ye-crystal ecocekileyo kakhulu ene-thermal conductivity egqwesileyo, uzinzo loomatshini kunye nokumelana nobushushu obuphezulu. Ngenxa yenkqubo yayo yokulungiselela ngokuchanekileyo kunye nezixhobo ezikumgangatho ophezulu, le chip yenye yezona zinto zikhethwayo zokulungiselela izixhobo ze-elektroniki ezisebenza kakuhle kwiindawo ezininzi.

Thumela i-imeyile kuthi

Iimbonakalo

Izicelo

Iiwafer ze-silicon carbide ezine-intshi enye ze-crystal substrate zidlala indima ebalulekileyo kwiindawo ezininzi. Okokuqala, zisetyenziswa kakhulu kwishishini le-semiconductor ekulungiseleleni izixhobo ze-elektroniki ezinamandla aphezulu ezifana nee-transistors zamandla, iisekethe ezidibeneyo kunye neemodyuli zamandla. Ukuqhuba kwayo okuphezulu kobushushu kunye nokumelana nobushushu obuphezulu kwenza ukuba ikwazi ukukhupha ubushushu ngcono kwaye ibonelele ngokusebenza kakuhle kunye nokuthembeka okukhulu. Okwesibini, iiwafer ze-silicon carbide zikwasetyenziswa kwicandelo lophando ukwenza uphando ngezinto ezintsha kunye nezixhobo. Ukongeza, iiwafer ze-silicon carbide zikwasetyenziswa kakhulu kwi-optoelectronics, njengokwenziwa kwee-LED kunye nee-laser diodes.

Iinkcukacha ze-wafer ye-SiC ye-4inch

I-wafer ye-silicon carbide ye-1-intshi ye-silicon carbide ene-crystal substrate ububanzi obuzii-intshi ezi-4 (malunga ne-101.6mm), ukugqitywa komphezulu ukuya kuthi ga kwi-Ra < 0.5 nm, ubukhulu obuyi-600±25 μm. Ukuqhuba kwe-wafer luhlobo lwe-N okanye uhlobo lwe-P kwaye inokwenziwa ngokwezifiso ngokweemfuno zabathengi. Ukongeza, itshiphu ikwanazo nokuzinza okuhle kakhulu koomatshini, inokumelana noxinzelelo oluthile kunye nokungcangcazela.

I-inch silicon carbide single crystal substrate wafer sisixhobo esisebenza kakuhle esisetyenziswa kakhulu kwiinkalo ze-semiconductor, uphando kunye ne-optoelectronics. Sinomoya ofudumeleyo ogqwesileyo, uzinzo loomatshini kunye nokumelana nobushushu obuphezulu, esifanelekileyo ukulungiselela izixhobo ze-elektroniki ezinamandla aphezulu kunye nophando lwezinto ezintsha. Sinikezela ngeenkcukacha ezahlukeneyo kunye neendlela zokwenza ngokwezifiso ukuhlangabezana neemfuno ezahlukeneyo zabathengi. Nceda uqaphele iwebhusayithi yethu ezimeleyo ukuze ufunde ngakumbi malunga nolwazi lwemveliso yee-silicon carbide wafers.

Imisebenzi ephambili: Ii-wafers ze-silicon carbide, ii-wafers ze-silicon carbide single crystal substrate, ii-intshi ezi-4, ukuqhuba kobushushu, ukuzinza koomatshini, ukumelana nobushushu obuphezulu, ii-transistors zamandla, iisekethe ezidibeneyo, iimodyuli zamandla, ii-LED, ii-diode ze-laser, ukugqitywa komphezulu, ukuqhuba kombane, iinketho ezenziwe ngokwezifiso