Ii-intshi ezi-4 zeSiC Wafers 6H Semi-Insulating SiC Substrates eziphambili, uphando, kunye nebakala ledummy

Ii-intshi ezi-4 ze-SiC Wafers 6H Semi-Insulating SiC Substrates prime, uphando, kunye nebakala eliyidummy oFanelweyo

Inkcazelo emfutshane:

I-Semi-insulated silicon carbide substrate yenziwa ngokusika, ukugaya, ukupolisha, ukucocwa kunye nobunye ubuchwepheshe bokucwangcisa emva kokukhula kwe-semi-insulated silicon carbide crystal. Umaleko okanye umaleko wekristale eninzi ukhuliswe kwi-substrate ehlangabezana neemfuno zomgangatho njenge-epitaxy, kwaye ke isixhobo se-microwave RF senziwe ngokudibanisa uyilo lwesekethe kunye nokupakishwa. Ifumaneka njenge-2inch 3inch 4incgh 6inch 8 intshi yoshishino, uphando kunye novavanyo lwebanga le-semi-insulated silicon carbide enye i-crystal substrates.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukucaciswa kweMveliso

IBanga			Zero MPD iBanga leMveliso (iBanga leZ)			IBanga leMveliso esemgangathweni(iBanga le-P)		IBanga leDummy (D Grade)
Ububanzi			99.5 mm~100.0 mm
	4H-SI		500 μm±20 μm			500 μm±25 μm
Iwafer Orientation			I-off axis : 4.0 ° ukuya <1120 > ±0.5 ° ye-4H-N, Kwi-axis : <0001>±0.5 ° ye-4H-SI
	4H-SI		≤1cm^-2			≤5 cm^-2		≤15 cm^-2
	4H-SI		≥1E9 Ω·cm					≥1E5 Ω·cm
Ukuqhelaniswa neFlethi ePhambili		{10-10} ±5.0°
Ubude beFlethi obuPhambili		32.5 mm±2.0 mm
Ubude beFlethi yesibini		18.0 mm±2.0 mm
Ukuqhelaniswa neFlethi yesibini		Ubuso beSilicon phezulu: 90° CW. ukusuka Prime flat ±5.0 °
Ukungabandakanywa kuMda		3 mm
LTV/TTV/Saphetha/Warp		≤3 μm/≤5 μm/≤15 μm/≤30 μm						≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			C ubuso				Polish		Ra≤1 nm
			Si ubuso	CMP	Ra≤0.2 nm					Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo		Akukho nanye						Ubude obongezelekayo ≤ 10 mm, enye ubude≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo		Indawo eyongezelekayo ≤0.05%						Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo		Akukho nanye						Indawo eyongezelekayo≤3%
Ukubandakanywa kweCarbon ebonakalayo		Indawo eyongezelekayo ≤0.05%						Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo		Akukho nanye						Ubude obongezelekayo≤1＊idayamitha yewafer
I-Edge Chips iPhezulu ngokuKhanya okuKhanya		Akukho kuvunyelweyo ≥0.2 mm ububanzi nobunzulu						I-5 ivunyelwe, ≤1 mm nganye
Ungcoliseko lweSilicon Surface ngoBunzulu obuPhezulu		Akukho nanye
Ukupakishwa		Multi-wafer Cassette Okanye Single Wafer Container