I-3inch ye-SiC substrate yoMveliso weDiya76.2mm 4H-N

I-3inch ye-SiC substrate yeMveliso ye-Dia76.2mm 4H-N Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-3-intshi ye-Silicon Carbide 4H-N yafer yimathiriyeli ephucukileyo ye-semiconductor, eyilelwe ngokukodwa ukusebenza okuphezulu kwe-elektroniki kunye ne-optoelectronic applications. Iyaziwa ngeempawu zayo ezikhethekileyo zomzimba kunye nombane, esi siqwengana sesinye sezinto ezibalulekileyo kwindawo yombane wombane. .

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-3 intshi ye-silicon carbide mosfet wafers zilandelayo;

I-Silicon Carbide (i-SiC) yi-wide-bandgap semiconductor material, ebonakaliswa yi-conductivity ephezulu ye-thermal, ukuhamba kwe-electron ephezulu, kunye nokuphazamiseka okuphezulu kwamandla ombane. Ezi zakhiwo zenza ii-wafers ze-SiC zibalasele kumandla aphezulu, i-high-frequency, kunye nezicelo zobushushu obuphezulu. Ngokukodwa kwi-polytype ye-4H-SiC, isakhiwo sayo se-crystal sibonelela ngokusebenza kakuhle kwe-elektroniki, okwenza kube yinto ekhethiweyo yezixhobo zombane zombane.

I-3-intshi ye-Silicon Carbide 4H-N wafer yi-nitrogen-doped wafer ene-N-type conductivity. Le ndlela ye-doping inika i-wafer ugxininiso lwe-electron ephezulu, ngaloo ndlela iphucula ukusebenza kwesixhobo. Ubungakanani be-wafer, kwii-intshi ezi-3 (ububanzi be-76.2 mm), bubukhulu obusetyenziswa ngokuqhelekileyo kushishino lwe-semiconductor, olulungele iinkqubo ezahlukeneyo zokuvelisa.

I-3-intshi ye-Silicon Carbide ye-4H-N i-wafer iveliswa ngokusebenzisa indlela ye-Physical Vapor Transport (PVT). Le nkqubo ibandakanya ukuguqula i-SiC powder ibe yikristale enye kumaqondo okushisa aphezulu, ukuqinisekisa umgangatho we-crystal kunye nokufana kwe-wafer. Ukongeza, ubukhulu be-wafer buhlala bujikeleze i-0.35 mm, kwaye umphezulu wayo uphantsi kwepolishi enamacala amabini ukufezekisa inqanaba eliphezulu kakhulu lokuthamba kunye nokuguda, okubalulekileyo kwiinkqubo zokwenziwa kwe-semiconductor ezilandelayo.

Uluhlu lwesicelo se-3-intshi ye-Silicon Carbide 4H-N i-wafer ibanzi, kubandakanywa izixhobo zombane zamandla aphezulu, i-sensor-high-temperature sensors, izixhobo ze-RF, kunye nezixhobo ze-optoelectronic. Ukusebenza kwayo okugqwesileyo kunye nokuthembeka kwenza ezi zixhobo zisebenze ngokuzinzileyo phantsi kweemeko ezigqithisileyo, ukuhlangabezana nemfuno yezixhobo eziphezulu ze-semiconductor kwishishini lanamhlanje le-elektroniki.

Sinokubonelela nge-4H-N 3inch ye-SiC substrate, amabakala ahlukeneyo e-substrate stock wafers. Singakwazi kwakhona ukulungelelanisa ukwenza ngokweemfuno zakho. Wamkelekile umbuzo!