I-substrate ye-SiC ye-3 intshi Imveliso ye-Dia76.2mm 4H-N

Iimpawu eziphambili zee-wafers ze-silicon carbide mosfet ezingama-intshi ezi-3 zezi zilandelayo;

I-Silicon Carbide (i-SiC) yinto ye-semiconductor ebanzi, ebonakaliswa kukuqhuba okuphezulu kobushushu, ukuhamba okuphezulu kwe-electron, kunye namandla ombane aqhekekileyo kakhulu. Ezi mpawu zenza ii-wafers ze-SiC zibalasele kwizicelo zamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu. Ingakumbi kwi-polytype ye-4H-SiC, isakhiwo sayo sekristale sinika ukusebenza okuhle kakhulu kwe-elektroniki, okwenza ukuba ibe yinto ekhethwayo kwizixhobo ze-elektroniki ezinamandla.

I-wafer ye-Silicon Carbide 4H-N ye-intshi ezi-3 yi-wafer ene-nitrogen enomoya wokuqhuba umbane wohlobo lwe-N. Le ndlela yokuqhuba umbane inika i-wafer umlinganiselo ophezulu we-electron, ngaloo ndlela iphucula ukusebenza komoya wokuqhuba kwesixhobo. Ubungakanani be-wafer, obuzii-intshi ezi-3 (ububanzi obuyi-76.2 mm), bubukhulu obusetyenziswa kakhulu kushishino lwe-semiconductor, olufanele iinkqubo ezahlukeneyo zokuvelisa.

I-wafer ye-Silicon Carbide 4H-N eyi-intshi ezi-3 iveliswa kusetyenziswa indlela ye-Physical Vapor Transport (PVT). Le nkqubo ibandakanya ukuguqula umgubo we-SiC ube ziikristale ezizodwa kubushushu obuphezulu, ukuqinisekisa umgangatho wekristale kunye nokufana kwe-wafer. Ukongeza, ubukhulu be-wafer buhlala bumalunga ne-0.35 mm, kwaye umphezulu wayo upholishwa kabini ukuze kufezekiswe umgangatho ophezulu kakhulu wokuthe tyaba kunye nokuthamba, okubaluleke kakhulu kwiinkqubo zokwenziwa kwe-semiconductor ezilandelayo.

Uluhlu lokusetyenziswa kwe-wafer ye-Silicon Carbide 4H-N ye-intshi ezi-3 lukhulu, kuquka izixhobo ze-elektroniki ezinamandla aphezulu, izinzwa zobushushu obuphezulu, izixhobo ze-RF, kunye nezixhobo ze-optoelectronic. Ukusebenza kwayo okugqwesileyo kunye nokuthembeka kwenza ezi zixhobo zisebenze ngokuzinzileyo phantsi kweemeko ezinzima, zihlangabezana nemfuno yezixhobo ze-semiconductor ezisebenzayo kakhulu kushishino lwe-elektroniki lwanamhlanje.

Singabonelela nge-4H-N 3inch SiC substrate, iintlobo ezahlukeneyo zee-wafers zesitokhwe se-substrate. Singalungiselela nokwenza ngokwezifiso ngokweemfuno zakho. Wamkelekile umbuzo!