IiWafers zeSilicon Carbide ezizi-3 intshi eziQinisekileyo (ezingafakwanga) zeSilicon Carbide Substrates (HPSl)

I-3 intshi High Purity (engafakwanga) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl) Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-wafer ye-3-intshi ye-High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) yi-substrate yodidi oluphezulu elungiselelwe ukusetyenziswa kwamandla aphezulu, amaza aphezulu, kunye ne-optoelectronic. Zenziwe ngezinto ze-4H-SiC ezingavulwanga, ezi zi-wafer zibonisa ukuhanjiswa kobushushu okugqwesileyo, i-bandgap ebanzi, kunye neempawu ezibalaseleyo ze-semi-insulating, ezenza ukuba zibe yimfuneko kuphuhliso oluphambili lwesixhobo. Ngomgangatho ophezulu wesakhiwo kunye nomgangatho womphezulu, ii-substrates ze-HPSI SiC zisebenza njengesiseko setekhnoloji yesizukulwana esilandelayo kumashishini e-elektroniki, unxibelelwano, kunye neenqwelo moya, zixhasa uyilo kwiindawo ezahlukeneyo.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati

1. Iimpawu zeMpawu nezeZakhiwo
●Uhlobo lwezinto: Ucoceko Oluphezulu (Olungafakwanga) I-Silicon Carbide (SiC)
●Ububanzi: 3 intshi (76.2 mm)
●Ubukhulu: 0.33-0.5 mm, inokwenziwa ngokwezifiso ngokusekelwe kwiimfuno zesicelo.
●Ulwakhiwo lwekristale: I-polytype ye-4H-SiC ene-lattice ene-hexagonal, eyaziwa ngokuhamba okuphezulu kwe-electron kunye nokuzinza kobushushu.
●Ukuqhelanisa:
oStandard: [0001] (C-plane), ifanelekile kwiintlobo ngeentlobo zezicelo.
oOnganyanzelekanga: I-Off-axis (4° okanye 8° tilt) yokukhulisa i-epitaxial yeeleya zesixhobo.
●Ubucaba: Ukwahluka kobukhulu obupheleleyo (TTV) ●Umgangatho womphezulu:
o Ipolished ukuya kwi-o Uxinano oluphantsi (<10/cm² Uxinano lwemibhobho emincinci). 2. Iipropati zoMbane ●Ukumelana: >109^99 Ω·cm, igcinwa ngokususa izinto ezingafunekiyo.
●Ukuqina kweDielectric: Ukunyamezela kwe-voltage ephezulu kunye nokulahleka okuncinci kwe-dielectric, ilungele ukusetyenziswa kwamandla aphezulu.
●Ukuqhuba Ubushushu: 3.5-4.9 W/cm·K, okuvumela ukusasazwa kobushushu okusebenzayo kwizixhobo ezisebenza kakuhle.

3. Iipropati zoBushushu kunye nezobuMechanical
●Isithuba sebhendi ebanzi: 3.26 eV, exhasa ukusebenza phantsi kwevolthi ephezulu, ubushushu obuphezulu, kunye neemeko zokukhanya okuphezulu.
●Ukuqina: Isikali se-Mohs 9, siqinisekisa ukuqina ngokuchasene nokuguguleka koomatshini ngexesha lokucubungula.
●I-Coefficient yoKwandiswa kobushushu: 4.2×10−6/K4.2 \times 10^{-6}/\text{K}4.2×10−6/K, ukuqinisekisa uzinzo lobukhulu phantsi kotshintsho lobushushu.

Ipharamitha	Ibanga leMveliso	Ibanga loPhando	Ibanga elingeyonyani	Iyunithi
Ibanga	Ibanga leMveliso	Ibanga loPhando	Ibanga elingeyonyani
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ubukhulu	500 ± 25	500 ± 25	500 ± 25	µm
Uqeqesho lweWafer	I-On-axis: <0001> ± 0.5°	I-On-axis: <0001> ± 2.0°	I-On-axis: <0001> ± 2.0°	isidanga
Uxinano lweeMipayipi ezincinci (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ukumelana nombane	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Ayivulwanga	Ayivulwanga	Ayivulwanga
Uqhelaniso oluPhambili oluSicaba	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	isidanga
Ubude obuPhambili obuSicaba	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude obuSicaba beSibini	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Ulwazelelelo lweSibini oluSicaba	90° CW ukusuka kwiflethi yokuqala ± 5.0°	90° CW ukusuka kwiflethi yokuqala ± 5.0°	90° CW ukusuka kwiflethi yokuqala ± 5.0°	isidanga
Ukukhutshwa komda	3	3	3	mm
I-LTV/TTV/Isaphetha/I-Warp	3 / 10 / ±30 / 40	3 / 10 / ±30 / 40	5 / 15 / ±40 / 45	µm
Uburhabaxa bomphezulu	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe	Ubuso obu-Si: CMP, ubuso obu-C: Bukhazimlisiwe
Iintanda (Ukukhanya Okunamandla Aphezulu)	Akukho nanye	Akukho nanye	Akukho nanye
Iipleyiti zeHex (Ukukhanya Okuphezulu)	Akukho nanye	Akukho nanye	Indawo eqokelelweyo yi-10%	%
Iindawo zePolytype (Ukukhanya Okuphezulu)	Indawo eqokelelweyo yi-5%	Indawo eqokelelweyo yi-20%	Indawo eqokelelweyo yi-30%	%
Imikrwelo (Ukukhanya Okuphezulu)	≤ imikrwelo emi-5, ubude obudibeneyo ≤ 150	≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200	≤ imikrwelo eli-10, ubude obudibeneyo ≤ 200	mm
Ukuqhekeza Umphetho	Akukho nto ≥ 0.5 mm ububanzi/ubunzulu	2 zivunyelwe ≤ 1 mm ububanzi/ubunzulu	5 ivumelekile ≤ 5 mm ububanzi/ubunzulu	mm
Ungcoliseko lomphezulu	Akukho nanye	Akukho nanye	Akukho nanye

Izicelo

1. Izixhobo zombane zamandla
I-bandgap ebanzi kunye nokuqhuba okuphezulu kobushushu be-HPSI SiC substrates kuzenza zilungele izixhobo zamandla ezisebenza kwiimeko eziqatha, ezinje:
●Izixhobo zeVoltage ephezulu: Kubandakanya iiMOSFET, ii-IGBT, kunye neeSchottky Barrier Diodes (ii-SBD) ukuze kuguqulwe amandla ngokufanelekileyo.
●Iinkqubo zamandla avuselelekayo: Ezifana nee-solar inverters kunye nezilawuli ze-wind turbine.
●Iimoto zombane (ii-EV): Zisetyenziswa kwii-inverters, kwiitshaja, nakwiinkqubo ze-powertrain ukuphucula ukusebenza kakuhle nokunciphisa ubungakanani.

2. Usetyenziso lwe-RF kunye ne-Microwave
Ukumelana okuphezulu kunye nokulahleka okuphantsi kwe-dielectric kwee-HPSI wafers kubalulekile kwiinkqubo ze-radio-frequency (RF) kunye neenkqubo ze-microwave, kuquka:
●Iziseko zoNxibelelwano: Izitishi ezisisiseko zeenethiwekhi ze-5G kunye nonxibelelwano lwesathelayithi.
●Indawo yomoya kunye noKhuselo: Iinkqubo zeRadar, ii-antenna ezifakwe izigaba, kunye nezinto ze-avionics.

3. I-Optoelectronics
Ukucaca kunye ne-bandgap ebanzi ye-4H-SiC ivumela ukusetyenziswa kwayo kwizixhobo ze-optoelectronic, ezifana:
●Iifoto ze-UV: Zokujonga imeko-bume kunye nokuxilongwa kwezonyango.
●Ii-LED ezinamandla aphezulu: Zixhasa iinkqubo zokukhanyisa eziqinileyo.
●Iidayiode zeLaser: Zenzelwe ukusetyenziswa kwemizi-mveliso kunye nezonyango.

4. Uphando noPhuhliso
Ii-substrates ze-HPSI SiC zisetyenziswa kakhulu kwiilebhu ze-R&D zezemfundo nezemizi-mveliso ukuze kuhlolwe iipropati zezinto ezisemgangathweni kunye nokwenziwa kwezixhobo, kuquka:
●Ukukhula KweeLeya ze-Epitaxial: Izifundo zokunciphisa iziphene kunye nokwenza ngcono iileya.
●Izifundo Zokuhamba Komthwali: Uphando lokuthuthwa kwee-electron kunye nemingxunya kwizinto ezicocekileyo kakhulu.
●Umzekelo: Uphuhliso lokuqala lwezixhobo ezintsha kunye neesekethe.

Iingenelo

Umgangatho oPhezulu:
Ubunyulu obuphezulu kunye noxinano oluphantsi lweziphene zibonelela ngeqonga elithembekileyo lezicelo eziphambili.

Uzinzo lobushushu:
Iimpawu ezintle zokusasaza ubushushu zivumela izixhobo ukuba zisebenze ngokufanelekileyo phantsi kwamandla aphezulu kunye neemeko zobushushu.

Ukuhambelana Okubanzi:
Iindlela ezikhoyo zokuqhelanisa kunye neendlela zokukhetha ubukhulu obukhethekileyo ziqinisekisa ukuba ziyahambelana neemfuno ezahlukeneyo zesixhobo.

Ukuqina:
Ubulukhuni obungaqhelekanga kunye nokuzinza kwesakhiwo kunciphisa ukuguguleka kunye nokuguquguquka ngexesha lokucubungula nokusebenza.

Ukuguquguquka:
Ifanelekile kumashishini amaninzi, ukusuka kumandla avuselelekayo ukuya kwi-aerospace kunye nonxibelelwano.

Isiphelo

I-wafer ye-Silicon Carbide ene-High Purity Semi-Insulating eyi-3 intshi imele eyona teknoloji ibalaseleyo ye-substrate kwizixhobo ezinamandla aphezulu, ezisebenzisa i-frequency ephezulu, kunye ne-optoelectronic. Ukudibanisa kwayo iipropati ezigqwesileyo zobushushu, zombane, kunye nezoomatshini kuqinisekisa ukusebenza okuthembekileyo kwiindawo ezinzima. Ukusuka kwiinkqubo ze-elektroniki zamandla kunye neenkqubo ze-RF ukuya kwi-optoelectronics kunye ne-R&D ephucukileyo, ezi substrates ze-HPSI zibonelela ngesiseko sezinto ezintsha zangomso.
Ukuze ufumane ulwazi oluthe kratya okanye ukufaka iodolo, nceda unxibelelane nathi. Iqela lethu lobuchwephesha liyafumaneka ukubonelela ngesikhokelo kunye neendlela zokwenza ngokwezifiso ezilungiselelwe iimfuno zakho.