I-intshi ezi-3 zoBusulungekileyo obuPhezulu (Abungatshitshiswanga)IiSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)

I-intshi ezi-3 zokucoceka okuPhezulu (Akungatshitshiswanga)IiSilicon Carbide Wafers semi-Insulating Sic Substrates (HPSl) Umfanekiso okhoyo

Inkcazelo emfutshane:

I-3-intshi ye-High Purity Semi-Insulating (HPSI) yeSilicon Carbide (SiC) i-wafer yi-premium-grade substrate elungiselelwe amandla aphezulu, i-high-frequency, kunye ne-optoelectronic applications. Zenziwe ngezinto ezingafakwanga, ezicoceke kakhulu ze-4H-SiC, ezi ziphaluka zibonisa ukuhanjiswa kwe-thermal okugqwesileyo, i-bandap ebanzi, kunye neempawu ezikhethekileyo zokugquma i-semi-insulating, zizenza zibe yimfuneko kuphuhliso lwesixhobo esiphambili. Ngokuthembeka kwesakhiwo esiphakamileyo kunye nomgangatho womphezulu, ii-substrates ze-HPSI SiC zisebenza njengesiseko seteknoloji yesizukulwana esilandelayo kumbane wamandla, unxibelelwano, kunye nemizi-mveliso ye-aerospace, exhasa ukuveliswa kwezinto ezintsha kwiinkalo ezahlukeneyo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

1. IiPropati zoMzimba kunye noLwakhiwo
● Uhlobo lwezinto eziphathekayo: Ukucoceka okuphezulu (Akunqunywanga) iSilicon Carbide (SiC)
● Ububanzi: 3 intshi (76.2 mm)
● Ubukhulu: 0.33-0.5 mm, ngokwezifiso ngokusekelwe kwiimfuno zesicelo.
● I-Crystal Structure: I-4H-SiC i-polytype ene-hexagonal lattice, eyaziwayo ngokuhamba okuphezulu kwe-electron kunye nokuzinza kwe-thermal.
● Uqhelaniso:
oStandard: [0001] (C-plane), ilungele uluhlu olubanzi lwezicelo.
oNgokuzikhethela: I-off-axis (4° okanye 8° tilt) ukwenzela ukukhula okuphuculweyo kwe-epitaxial yeeleya zesixhobo.
●Ukuthe tyaba: Ubunzima bubonke umahluko (TTV) ●Umgangatho woMphezulu:
oLikhazimlisiwe ukuya oLow-defect density (<10/cm² uxinano lwemicropipe). 2. IiPropati zoMbane ● Ukuxhathisa: >109^99 Ω·cm, kugcinwa ngokupheliswa kweedopanti zangabom.
● Amandla e-Dielectric: Ukunyamezela kwamandla aphezulu kunye nokulahlekelwa kwe-dielectric encinci, ilungele ukusetyenziswa kwamandla aphezulu.
● I-Thermal Conductivity: 3.5-4.9 W / cm·K, eyenza ukutshatyalaliswa kokushisa okusebenzayo kwizixhobo zokusebenza eziphezulu.

3. IiPropati zeThermal kunye neMechanical
● I-Bandgap ebanzi: 3.26 eV, ukuxhasa ukusebenza phantsi kombane ophezulu, ukushisa okuphezulu, kunye neemeko eziphezulu zemitha.
● Ukuqina: I-Mohs isikali 9, iqinisekisa ukomelela ngokuchasene nokunxitywa komatshini ngexesha lokucubungula.
● I-Coefficient yoKwandiswa kweThermal: 4.2×10−6/K4.2 \ amaxesha 10^{-6}/\text{K}4.2×10−6/K, iqinisekisa uzinzo lwe-dimensional phantsi kweenguqu zobushushu.

Ipharamitha	IBanga leMveliso	IBanga loPhando	IBanga leDummy	Iyunithi
IBanga	IBanga leMveliso	IBanga loPhando	IBanga leDummy
Ububanzi	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Ukutyeba	500 ± 25	500 ± 25	500 ± 25	µm
I-Wafer Orientation	Kwi-axis: <0001> ± 0.5 °	Kwi-axis: <0001> ± 2.0 °	Kwi-axis: <0001> ± 2.0 °	isidanga
Uxinaniso lweMibhobho (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Ukuxhathisa koMbane	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
I-Dopant	Ingaguqulwanga	Ingaguqulwanga	Ingaguqulwanga
Ukuqhelaniswa neFlethi okuPhambili	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	isidanga
Ubude beFlethi obuPhambili	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Ubude beFlethi yesibini	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Ukuqhelaniswa neFlethi yesibini	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	I-90 ° CW ukusuka kwiflethi yokuqala ± 5.0 °	isidanga
Ukungabandakanywa kuMda	3	3	3	mm
LTV/TTV/Bow/Warp	3/10 / ±30/40	3/10 / ±30/40	5/15 / ±40/45	µm
Uburhabaxa boMphezulu	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe	Ubuso beSi: CMP, C-ubuso: bukhazimlisiwe
Iintanda (Ukukhanya okuPhezulu)	Akukho nanye	Akukho nanye	Akukho nanye
Iipleyiti zeHex (Ukukhanya okuPhezulu)	Akukho nanye	Akukho nanye	Indawo eyongezelekayo 10%	%
Iindawo zePolytype (Ukukhanya okuPhezulu)	Indawo eyongezelekayo 5%	Indawo eyongezelekayo 20%	Indawo eyongezelekayo 30%	%
Imikrwelo (UkuKhanya okuPhezulu)	≤ Imikrwelo emi-5, ubude obuqokelelweyo ≤ 150	≤ Imikrwelo eyi-10, ubude obuqokelelweyo ≤ 200	≤ Imikrwelo eyi-10, ubude obuqokelelweyo ≤ 200	mm
Edge Chipping	Akukho nanye ≥ 0.5 mm ububanzi/ubunzulu	I-2 ivunyelwe ≤ 1 mm ububanzi / ubunzulu	I-5 ivunyelwe ≤ 5 mm ububanzi / ubunzulu	mm
Ungcoliseko loMphezulu	Akukho nanye	Akukho nanye	Akukho nanye

Usetyenziso

1. I-Electronics yamandla
I-bandgap ebanzi kunye ne-thermal conductivity ephezulu ye-HPSI SiC substrates ibenza balungele izixhobo zamandla ezisebenza kwiimeko ezigqithisileyo, ezifana:
● I-High-Voltage Devices: Kubandakanya i-MOSFET, ii-IGBTs, kunye ne-Schottky Barrier Diodes (SBDs) yokuguqulwa kwamandla ngokufanelekileyo.
● IiNkqubo zaMandla aVuselelwayo: Ezinje ngee-inverters zelanga kunye nabalawuli be-injini yomoya.
● IZithuthi zoMbane (EVs): Zisetyenziswa kwii-inverters, iitshaja, kunye neenkqubo zokuqeqesha amandla ukuphucula ukusebenza kakuhle nokunciphisa ubukhulu.

2. Izicelo zeRF kunye neMicrowave
Ukumelana okuphezulu kunye nelahleko ephantsi yedielectric yeewafers zeHPSI zibalulekile kwirediyo-frequency (RF) kunye neenkqubo zemicrowave, kubandakanya:
● Iziseko zoNxibelelwano zoNxibelelwano: Izitishi ezisisiseko ze-5G uthungelwano kunye nonxibelelwano lwesathelayithi.
● I-Aerospace kunye noKhuseleko: Iinkqubo ze-radar, ii-antenna ze-phased-array, kunye nezixhobo ze-avionics.

3. Optoelectronics
Ukungafihli kunye nebhendi ebanzi ye-4H-SiC yenza ukuba isetyenziswe kwizixhobo ze-optoelectronic, ezifana:
● Iifoto ze-UV: Ukujongwa kokusingqongileyo kunye nokuxilongwa kwezonyango.
● Ii-LED zaMandla aphezulu: Ukuxhasa iinkqubo zokukhanyisa eziqinileyo.
● I-Laser Diodes: Izicelo zamashishini kunye nezonyango.

4. Uphando kunye noPhuhliso
Iisubstrates ze-HPSI SiC zisetyenziswa ngokubanzi kwiilebhu ze-R&D zemfundo kunye nezoshishino zokuphonononga iipropathi zemathiriyeli eziphambili kunye nokwenziwa kwesixhobo, kubandakanywa:
● I-Epitaxial Layer Growth: Izifundo ngokunciphisa isiphene kunye nokuphucula umaleko.
● Izifundo zokuHamba kweCarrier: Uphando lwe-electron kunye nokuthuthwa komngxuma kwizinto ezicocekileyo.
● Iprototyping: Uphuhliso lokuqala lwezixhobo ezintsha kunye neesekethe.

Iingenelo

Umgangatho ophezulu:
Ubunyulu obuphezulu kunye noxinzelelo oluphantsi lwesiphako lubonelela ngeqonga elithembekileyo lezicelo eziphambili.

Uzinzo lweThermal:
Iimpawu ezigqwesileyo zokutshatyalaliswa kobushushu zivumela izixhobo ukuba zisebenze ngokufanelekileyo phantsi kwamandla aphezulu kunye neemeko zokushisa.

Ukuhambelana okubanzi:
Ulungelelwaniso olukhoyo kunye nokhetho lobungakanani besiko luqinisekisa ukuguquguquka kwiimfuno ezahlukeneyo zesixhobo.

Ukuqina:
Ubulukhuni obukhethekileyo kunye nokuzinza kwesakhiwo kunciphisa ukunxiba kunye nokuguqulwa ngexesha lokucubungula nokusebenza.

Ukuguquguquka:
Ifanelekile kuluhlu olubanzi lwamashishini, ukusuka kumandla ahlaziyekayo ukuya kwi-aerospace kunye nonxibelelwano.

Ukuqukumbela

I-3-inch High Purity Semi-Insulating Silicon Carbide wafer imele incopho yetekhnoloji ye-substrate yamandla aphezulu, i-high-frequency, kunye nezixhobo ze-optoelectronic. Ukudityaniswa kwayo kweempawu ezibalaseleyo zobushushu, zombane, kunye nezomatshini ziqinisekisa ukusebenza okuthembekileyo kwiindawo ezinomngeni. Ukusuka kumbane we-elektroniki kunye neenkqubo zeRF ukuya kwi-optoelectronics kunye ne-R&D ephucukileyo, ezi substrates zeHPSI zibonelela ngesiseko sezinto ezintsha zangomso.
Ngolwazi oluthe vetshe okanye ukwenza iodolo, nceda uqhagamshelane nathi. Iqela lethu lobugcisa liyafumaneka ukubonelela ngesikhokelo kunye neenketho zokwenza ngokwezifiso ezilungiselelwe iimfuno zakho.