I-2intshi SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Umfanekiso ocacileyo we-2intshi SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Inkcazo emfutshane:

Ingot ye-SiC (i-silicon carbide) engama-intshi ama-2 ibhekisa kwikristale enye ye-silicon carbide esisilinda okanye esimile okwebhloko enobubanzi okanye ubude bomphetho obuzii-intshi ezi-2. Iingot ze-silicon carbide zisetyenziswa njengezinto zokuqala ukuvelisa izixhobo ezahlukeneyo ze-semiconductor, ezifana nezixhobo ze-elektroniki ezinamandla kunye nezixhobo ze-optoelectronic.

Thumela i-imeyile kuthi

Iimbonakalo

Itekhnoloji yoKhula lweSiC Crystal

Iimpawu zeSiC zenza kube nzima ukukhulisa iikristale ezingatshatanga. Oku kungenxa yokuba akukho phase yolwelo ene-stoichiometric ratio yeSi: C = 1: 1 kuxinzelelo lomoya, kwaye akunakwenzeka ukukhulisa iSiC ngeendlela zokukhula ezivuthiweyo, njengendlela yokuzoba ngqo kunye nendlela yokuwela enqamlezileyo, ezizezona ziphambili kushishino lwe-semiconductor. Ngokwethiyori, isisombululo esine-stoichiometric ratio yeSi: C = 1: 1 sinokufunyanwa kuphela xa uxinzelelo lungaphezulu kwe-10E5atm kwaye ubushushu buphezulu kune-3200℃. Okwangoku, iindlela eziphambili ziquka indlela ye-PVT, indlela ye-liquid-phase, kunye nendlela ye-vapor-phase chemical deposition yobushushu obuphezulu.

Ii-wafers zeSiC kunye neekristale esizibonelelayo zikhuliswa kakhulu nge-physical vapor transport (PVT), kwaye oku kulandelayo ngcaciso emfutshane ngePVT:

Indlela yokuthutha umphunga ngokwasemzimbeni (i-PVT) yavela kwindlela yokwenziwa kwe-gas-phase sublimation eyaqanjwa nguLely ngo-1955, apho umgubo we-SiC ufakwa kwityhubhu yegrafiti kwaye ufudunyezwe kubushushu obuphezulu ukuze umgubo we-SiC ubole kwaye uncitshiswe, uze emva koko ityhubhu yegrafiti ipholiswe, kwaye izinto ezibolileyo ze-gas-phase zepowder ye-SiC zibekwe kwaye ziqiniswe njengeekristale ze-SiC kwindawo ejikelezileyo yetyhubhu yegrafiti. Nangona le ndlela inzima ukufumana iikristale ezinkulu ze-SiC enye kwaye inkqubo yokufaka ngaphakathi kwityhubhu yegrafiti kunzima ukuyilawula, inika izimvo kubaphandi abalandelayo.

UYM Tairov nabanye eRashiya bazise ingcamango yekristale yembewu ngale ndlela, eyasombulula ingxaki yokuma kwekristale engalawulekiyo kunye nendawo ye-nucleation yeekristale zeSiC. Abaphandi abalandelayo baqhubeka nokuphucula baze ekugqibeleni baphuhlisa indlela yokudluliselwa komphunga womzimba (PVT) esetyenziswa kwimizi-mveliso namhlanje.

Njengendlela yokuqala yokukhulisa ikristale yeSiC, iPVT okwangoku yeyona ndlela iphambili yokukhulisa iikristale zeSiC. Xa kuthelekiswa nezinye iindlela, le ndlela ineemfuno eziphantsi zezixhobo zokukhulisa, inkqubo yokukhula elula, ulawulo oluqinileyo, uphuhliso olupheleleyo kunye nophando, kwaye sele yenziwe yaba yimizi-mveliso.