2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

2inch SiC ingot iDia50.8mmx10mmt 4H-N monocrystal ebonakalisiweyo

Inkcazelo emfutshane:

I-2-intshi ye-SiC (i-silicon carbide) ingot ibhekisela kwikristale enye ye-cylindrical okanye ibhloko ye-silicon carbide enobubanzi okanye ubude obuyi-intshi ezi-2. I-Silicon carbide ingots isetyenziselwa ukuveliswa kwezixhobo ezahlukeneyo ze-semiconductor, ezifana nezixhobo zombane zamandla kunye nezixhobo ze-optoelectronic.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Itekhnoloji yokuKhula kweCrystal yeSiC

Iimpawu zeSiC zenza kube nzima ukukhula iikristale enye. Oku kubangelwa ngokukodwa ukuba akukho nqanaba lolwelo kunye nomlinganiselo we-stoichiometric weSi: C = 1: 1 kuxinzelelo lwe-atmospheric, kwaye akunakwenzeka ukukhula kwe-SiC ngeendlela zokukhula ezikhulile, ezifana nendlela yokudweba ngokuthe ngqo indlela yokuwela i-crucible, eyona nto iphambili kwishishini le-semiconductor. Ithiyori, isisombululo esinomlinganiselo we-stoichiometric weSi: C = 1: 1 inokufumaneka kuphela xa uxinzelelo lungaphezu kwe-10E5atm kwaye izinga lokushisa liphezulu kune-3200℃. Okwangoku, iindlela eziphambili ziquka indlela ye-PVT, indlela yesigaba se-liquid, kunye ne-high-temperature vapor-phase chemical deposition method.

Ii-wafers ze-SiC kunye neekristale esizibonelelayo zikhuliswa ikakhulu ngokuthuthwa komphunga womzimba (PVT), kwaye oku kulandelayo sisingeniso esifutshane kwi-PVT:

Indlela yokuthuthwa komphunga womzimba (PVT) yavela kubuchule be-gas-phase sublimation eyaqanjwa nguLely ngo-1955, apho umgubo weSiC ubekwe kwityhubhu yegraphite kwaye ufudunyezwe kubushushu obuphezulu ukwenza i-SiC powder ibole kwaye i-sublimate, kunye negraphite. ityhubhu ipholile phantsi, kwaye i-gas-phase phase components ye-SiC powder ifakwe kwaye i-crystallized njenge-crystals ye-SiC kwindawo ejikelezileyo yetyhubhu yegraphite. Nangona le ndlela inzima ukufumana i-crystals eyodwa ye-SiC enkulu kunye nenkqubo yokubeka ngaphakathi kwityhubhu yegraphite kunzima ukuyilawula, inika iingcamango kubaphandi abalandelayo.

YM Tairov et al. eRashiya yazisa ingcamango yekristale yembewu kwesi siseko, eyasombulula ingxaki ye-crystal shape engalawulekiyo kunye nesikhundla se-nucleation ye-crystals ye-SiC. Abaphandi abalandelayo baqhubeka bephucula kwaye ekugqibeleni baphuhlisa indlela yokudlulisa umphunga womzimba (PVT) indlela esetyenziswa kumashishini namhlanje.

Njengeyona ndlela yokuqala yokukhula kwekristale ye-SiC, i-PVT ngoku yeyona ndlela iphambili yokukhula kwiikristale ze-SiC. Xa kuthelekiswa nezinye iindlela, le ndlela ineemfuno eziphantsi zezixhobo zokukhula, inkqubo yokukhula elula, ukulawulwa okunamandla, uphuhliso olucokisekileyo kunye nophando, kwaye sele yenziwe ngamashishini.