2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-uhlobo lweMveliso yoPhando kunye nebakala leDummy

2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-uhlobo lweMveliso yoPhando kunye nomgangatho weDummy oFanelekileyo

Inkcazelo emfutshane:

Shanghai Xinkehui Tech. I-Co., Ltd inikezela ngokhetho olungcono kunye namaxabiso omgangatho ophezulu we-silicon carbide wafers kunye ne-substrates ukuya kuthi ga kwii-intshi ezintandathu zedayamitha ezine-N- kunye ne-semi-insulating iindidi. Iinkampani ezincinci kunye nezikhulu zezixhobo zesemiconductor kunye neelebhu zophando ezisetyenziswa kwihlabathi liphela kwaye zixhomekeke kwiiwafers zethu ze-silicone carbide.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iikhrayitheriya zeParametric ye-2-intshi ye-4H-N ii-wafers ze-SiC ezingagqitywanga zibandakanya

Isubstrate imathiriyeli: 4H isilicon carbide (4H-SiC)

Ubume beCrystal: tetrahexahedral (4H)

Idoping: Ingatshintshwa (4H-N)

Ubungakanani: 2 intshi

Uhlobo lokuqhuba: uhlobo lwe-N (n-doped)

Ukuqhuba: ISemiconductor

Imbonakalo yeMarike: I-4H-N ii-wafers ze-SiC ezingeyo-doped zineenzuzo ezininzi, ezinje nge-thermal conductivity ephezulu, ilahleko ye-conduction ephantsi, ukumelana nobushushu obuphezulu, kunye nozinzo oluphezulu lomatshini, kwaye ke ngoko banombono obanzi wentengiso kumbane wombane kunye nosetyenziso lweRF. Ngophuhliso lwamandla avuselelweyo, izithuthi zombane kunye nonxibelelwano, kukho imfuno ekhulayo yezixhobo ezinokusebenza okuphezulu, ukusebenza okuphezulu kobushushu kunye nokunyamezela kwamandla aphezulu, okubonelela ithuba elibanzi lemarike ye-4H-N ye-SiC engabonakaliyo.

Ukusetyenziswa: I-2-intshi ye-4H-N i-wafers ye-SiC engasetyenziswanga ingasetyenziselwa ukwenza iintlobo ezahlukeneyo zombane kunye nezixhobo ze-RF, kubandakanywa kodwa kungaphelelanga apho:

I-1--4H-SiC MOSFETs: I-Metal oxide semiconductor field effect transistors yamandla aphezulu / izicelo eziphezulu zokushisa. Ezi zixhobo zineelahleko eziphantsi zokuqhuba kunye nokutshintsha ukubonelela ngokusebenza okuphezulu kunye nokuthembeka.

I-2--4H-SiC JFETs: Ii-FET zeJunction ze-RF amplifier yamandla kunye nokutshintsha izicelo. Ezi zixhobo zibonelela ngokusebenza rhoqo rhoqo kunye nokuzinza okuphezulu kwe-thermal.

I-3--4H-SiC Schottky Diodes: I-Diodes yamandla aphezulu, ukushisa okuphezulu, izicelo eziphezulu ze-frequency. Ezi zixhobo zinika ukusebenza kakuhle okuphezulu kunye nokuqhuba okuphantsi kunye nokulahleka kokutshintsha.

I-4--4H-SiC Izixhobo ze-Optoelectronic: Izixhobo ezisetyenziselwa kwiindawo ezifana ne-laser diodes yamandla aphezulu, i-UV detectors kunye neesekethe ezidibeneyo ze-optoelectronic. Ezi zixhobo zinamandla aphezulu kunye neempawu zefrikhwensi.

Isishwankathelo, ii-2-intshi ze-4H-N ze-SiC zafers ezingafakwanga i-doped zinamandla oluhlu olubanzi lwezicelo, ngakumbi kumbane we-elektroniki kunye ne-RF. Ukusebenza kwabo okuphezulu kunye nokuzinza okuphezulu kweqondo lokushisa kubenza babe ngumchasi onamandla wokutshintsha izinto ze-silicon zendabuko ekusebenzeni okuphezulu, ubushushu obuphezulu kunye nezicelo zamandla aphezulu.