IiWafers zeSiC ezi-2 intshi ezingama-50.8mm zeSilicon Carbide ezifakwe i-Doped Si N-type Production Research kunye neDummy grade

Izinto ezingaphantsi komhlaba: i-4H silicon carbide (4H-SiC)

Ulwakhiwo lwekristale: i-tetrahexahedral (4H)

Ukudambisa iziyobisi: Akunakusetyenziswa (4H-N)

Ubungakanani: 2 intshi

Uhlobo lokuqhuba: Uhlobo lwe-N (olufakwe kwi-n)

Ukuqhuba: I-semiconductor

Imbonakalo yeMarike: Ii-wafer ze-SiC ezingafakwanga idophu ze-4H-N zineengenelo ezininzi, ezinje ngokuhambisa ubushushu obuphezulu, ukulahleka kokuhambisa okuphantsi, ukumelana nobushushu obuphezulu, kunye nozinzo oluphezulu loomatshini, kwaye ngaloo ndlela zinembono ebanzi yemarike kwizicelo ze-elektroniki zamandla kunye ne-RF. Ngophuhliso lwamandla ahlaziyekayo, izithuthi zombane kunye nonxibelelwano, kukho imfuno ekhulayo yezixhobo ezisebenzayo kakhulu, ukusebenza kobushushu obuphezulu kunye nokunyamezela amandla aphezulu, okubonelela ngamathuba emarike abanzi kwii-wafer ze-SiC ezingafakwanga idophu ze-4H-N.

Ukusetyenziswa: Ii-wafer ze-SiC ezingafakwanga i-4H-N ezingama-2-intshi zingasetyenziselwa ukwenza izixhobo ezahlukeneyo ze-elektroniki kunye nezixhobo ze-RF, kuquka kodwa kungaphelelanga apho:

Ii-MOSFET ze-1--4H-SiC: Ii-transistors ze-metal oxide semiconductor field effect zezicelo zamandla aphezulu/ubushushu obuphezulu. Ezi zixhobo zinelahleko ephantsi yokuqhuba kunye nokutshintsha ukuze zibonelele ngokusebenza kakuhle nangokuthembekileyo okuphezulu.

Ii-JFET ze-2--4H-SiC: Ii-FET ze-Junction ze-RF power amplifier kunye nezicelo zokutshintsha. Ezi zixhobo zibonelela ngokusebenza okuphezulu kunye nozinzo oluphezulu lobushushu.

IiDiode ze-3--4H-SiC Schottky: IiDiode zamandla aphezulu, ubushushu obuphezulu, kunye nokusetyenziswa kwamaza aphezulu. Ezi zixhobo zibonelela ngokusebenza kakuhle okuphezulu kunye nokulahleka okuphantsi kokuqhuba kunye nokutshintsha.

Izixhobo ze-Optoelectronic ze-4--4H-SiC: Izixhobo ezisetyenziswa kwiindawo ezifana nee-laser diodes ezinamandla aphezulu, ii-UV detectors kunye neesekethe ezidityanisiweyo ze-optoelectronic. Ezi zixhobo zineempawu zamandla aphezulu kunye ne-frequency.

Ngamafutshane, ii-wafer ze-SiC ezingafakwanga i-intshi ezi-2 zinamandla okusetyenziswa ngeendlela ezahlukeneyo, ingakumbi kwi-electronics zamandla kunye ne-RF. Ukusebenza kwazo okuphezulu kunye nokuzinza kobushushu obuphezulu kuzenza zibe ngumchasi onamandla wokutshintsha izixhobo ze-silicon zemveli kwizicelo zokusebenza okuphezulu, ubushushu obuphezulu kunye namandla aphezulu.